NTE2301 [NTE]
Silicon NPN Transistor High Voltage Horizontal Output; 硅NPN晶体管高电压水平输出
| 型号： | NTE2301 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor High Voltage Horizontal Output |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2301
Silicon NPN Transistor
High Voltage Horizontal Output
Description:
The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large
screen deflection circuits.
Features:
D Collector–Emitter Voltage: VCEX = 1500V
D Glassivated Base–Collector Junction
D Safe Operating Area @ 50µs = 20A, 400V
D Switching Times with Inductive Loads: tf = 0.4µs (Typ) @ IC = 4.5A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Total Power Dissipation, PD
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), TL . . . . . . . . . . . +275°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
V
I = 50mA, I = 0
750
–
–
–
–
–
1
1
V
CEO(sus)
C
B
I
V
CE
BE
= 1500V, V = 0
mA
mA
CES
BE
Emitter Cutoff Current
I
V
= 5V, I = 0
–
EBO
C
ON Characteristics (Note 1)
Collector–Emitter Saturation Voltage
V
V
I = 4.5A, I = 1.8A
–
–
–
–
–
–
–
–
5
V
V
V
V
CE(sat)
C
B
I = 3.5A, I = 1.5A
5
C
B
Base–Emitter Saturation Voltage
I = 4.5A, I = 1.8A
1.5
1.5
BE(sat)
C
B
I = 3.5A, I = 1.5A
C
B
Dynamic Characteristics
Current Gain – Bandwidth Product
Output Capacitance
f
I = 100mA, V = 5V, f = 1MHz
–
–
4
–
–
MHz
pF
T
C
CE
test
C
V
CB
= 10V, I = 0, f = 0.1MHz
125
ob
E
Switching Characteristics
Fall Time
t
f
I = 4.5A, I = 1.8A, L = 8µH
–
–
0.4
0.6
1.0
µs
µs
C
B1
B
I = 4.5A, I = 1.8A, L = 8µH,
–
C
B1
B
T = +100°C
C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%.
.600
(15.24)
.060 (1.52)
.173 (4.4)
C
.156
(3.96)
Dia.
.550
(13.97)
.430
(10.92)
B
C
E
.500
(12.7)
Min
.015 (0.39)
.055 (1.4)
.216 (5.45)
NOTE: Dotted line indicates that
case may have square corners
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