NTE2366 [NTE]
Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399); 硅PNP晶体管高电压视频放大器（中文全集，以NTE399 ）
| 型号： | NTE2366 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399) |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2366
Silicon PNP Transistor
High Voltage Video Amp
(Compl to NTE399)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
–
Typ Max Unit
Collector Cutoff Current
I
–
–
0.1
0.1
–
VCB = 200V, IE = 0
µA
µA
V
CBO
Emitter Cutoff Current
I
–
VEB = 4V, IC = 0
EBO
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
DC Current Gain
V
300
300
5
–
IC = 10µA, IE = 0
(BR)CBO
(BR)CEO
(BR)EBO
V
V
–
–
V
IC = 1mA, RBE = ∞
IE = 10µA, IC = 0
–
–
V
h
FE
40
–
–
320
0.6
1.0
–
VCE = 10V, IC = 10mA
IC = 20mA, IB = 2mA
IC = 20mA, IB = 2mA
VCE = 30V, IC = 10mA
VCB = 30V, f = 1MHz
VCB = 30V, f = 1MHz
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current Gain–Bandwidth Product
Capacitance
V
–
V
V
CE(sat)
BE(sat)
V
–
–
f
T
–
150
2.6
1.8
MHz
pF
pF
C
ob
–
–
Reverse Transfer Capacitance
C
re
–
–
.339
(8.62)
Max
Seating Plane
.026 (.66)
Dia Max
.512
(13.0)
Min
E C B
.100 (2.54)
.200
(5.08)
Max
.240 (6.09) Max
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