NTE2523 [NTE]
Silicon Complementary Transistors High Speed Switch; 硅互补晶体管的高速开关
| 型号： | NTE2523 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors High Speed Switch |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2522 (NPN) & NTE2523 (PNP)
Silicon Complementary Transistors
High Speed Switch
Features:
D High Current Capacity
D High Collector–Emitter Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO
NTE2522 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
NTE2523 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector Emitter Voltage, VCEO
NTE2522 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
NTE2523 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
NTE2522
ICBO
VCB = 45V, IE = 0
–
–
–
–
–
–
1.0 µA
1.0 µA
1.0 µA
NTE2523
VCB = 3V, IE = 0
VEB = 4V, IC = 0
Emitter Cutoff Current
IEBO
hFE1
DC Current Gain
NTE2522
VCE = 2V, IC = 500mA
VCE = 2V, IC = 8A
140
100
40
25
–
–
–
400
400
–
NTE2523
NTE2522
hFE2
–
NTE2523
–
–
fT
VCE = 2V, IC = 500mA
250
–
MHz
Gain–Bandwidth Product
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
Cob
NTE2522
NTE2523
VCB = 10V, f = 1MHz
–
–
65
–
–
pF
pF
100
Collector–Emitter Saturation Voltage
VCE(sat)
NTE2522
IC = 4A, IB = 200mA
IC = 4A, IB = 200mA
IC = 100µA, IE = 0
IC = 1mA, RBE = ∞
–
–
0.25 0.7
0.3 0.8
V
V
NTE2523
Base–Emitter Saturation Voltage
VBE(sat)
NTE2522
–
–
0.95 1.8
0.95 1.3
V
V
NTE2523
Collector–Base Breakdown Voltage
V(BR)CBO
NTE2522
60
50
–
–
–
–
V
V
NTE2523
Collector–Emitter Breakdown Voltage
V(BR)CEO
NTE2522
45
40
5
–
–
–
–
–
V
V
V
NTE2523
Emitter–Base Breakdown Voltage
Turn–On Time
V(BR)EBO IE = 10µA, IC = 0
–
ton
–
50
100 ns
VCC = 25V, VBE = 1V,
20IB1 = –20IB2 = IC = 4A,
Pulse Width = 20µs,
Duty Cucle ≤ 1%,
Note 1
Storage Time
NTE2522
tstg
–
–
150 270 ns
120 220 ns
NTE2523
Turn–Off Time
toff
NTE2522
–
–
180 350 ns
150 300 ns
NTE2523
Note 1. For NTE2523, the polarity is reversed.
.256 (6.5)
.197 (5.0)
.090 (2.3)
.002 (0.5)
.059 (1.5)
.275
(7.0)
B
C
E
.295
(7.5)
.002(0.5)
.090 (2.3)
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