NTE2530 [NTE]
Silicon Complementary Transistors High Voltage Driver; 硅互补晶体管高压驱动器
| 型号： | NTE2530 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors High Voltage Driver |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2530 (NPN) & NTE2531 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
D High Current Capacity: IC = 2A
D High Breakdown Voltage: VCEO = 400V Min
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Test Conditions
VCB = 300V, IE = 0
VEB = 4V, IC = 0
Min Typ Max Unit
–
–
–
–
–
1.0 µA
1.0 µA
200
VCE = 10V, IC = 100mA
40
Gain–Bandwidth Product
NTE2530
fT
VCE = 10V, IC = 100mA
–
–
60
40
–
–
–
MHz
MHz
V
NTE2531
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
VCE(sat) IC = 500mA, IB = 50mA
VBE(sat) IC = 500mA, IB = 50mA
V(BR)CBO IC = 10µA, IE = 0
–
1.0
1.0
–
–
–
V
400
400
5
–
V
V(BR)CEO IC = 1mA, RBE = ∞
V(BR)EBO IE = 10µA, IC = 0
–
–
V
–
–
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
Cob
NTE2530
NTE2531
VCB = 30V, f = 1MHz
–
–
15
25
–
–
pF
pF
Turn–On Time
NTE2530
ton
–
–
0.085
0.12
–
–
µs
µs
VCC = 150V, VBE = –5V,
10IB1 = –10IB2 = IC = 500mA,
RL = 300Ω, RB = 20Ω,
at IC = 500mA,
NTE2531
Storage Time
NTE2530
tstg
Pulse Width = 20µs,
–
–
4.0
3.0
–
–
µs
µs
Duty Cycle ≤ 1%, Note 1
NTE2531
Fall Time
NTE2530
tf
–
–
0.6
0.3
–
–
µs
µs
NTE2531
Note 1. For NTE2531, the polarity is reversed.
.256 (6.5)
.197 (5.0)
.090 (2.3)
.002 (0.5)
.059 (1.5)
.275
(7.0)
B
C
E
.295
(7.5)
.002(0.5)
.090 (2.3)
相关型号：
NTE253MCP
TRANSISTOR | BJT | PAIR | DARLINGTON | COMPLEMENTARY | 80V V(BR)CEO | 4A I(C) | TO-126
ETC
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