NTE2533 [NTE]
Silicon NPN Transistor High-Definition Color Display Horizontal Deflection Output; 硅NPN晶体管高清晰度彩色显示器的水平偏转输出
| 型号： | NTE2533 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor High-Definition Color Display Horizontal Deflection Output |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2533
Silicon NPN Transistor
High–Definition Color Display
Horizontal Deflection Output
Features:
D High Speed: tf = 100ns Typ
D High Breakdown Voltage: VCBO = 1500V
D High Reliability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
ICES
Test Conditions
VCE = 1500V
VCB = 800V, IE = 0
Min Typ Max Unit
Collector Cutoff Current
–
–
–
–
–
–
–
–
–
–
–
–
1.0
10
–
mA
µA
V
ICBO
Collector Sustaining Voltage
Emitter Cutoff Current
DC Current Gain
VCEO(sus) IC = 100mA, IB = 0
800
–
IEBO
hFE
VEB = 4V, IC = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 20A
1.0
30
8
mA
–
8
4
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Storage Time
VCE(sat) IC = 20A, IB = 5A
VBE(sat) IC = 20A, IB = 5A
–
5
V
V
–
1.5
3
tstg
tf
–
µs
µs
IC = 12A, IB1 = 2.4A,
IB2 = –4.8A
Fall Time
–
0.2
.810 (20.57)
Max
.204 (5.2)
.236
(6.0)
1.030
(26.16)
.137
(3.5)
Dia
Max
.098
(2.5)
.787
(20.0)
.215 (5.45)
.040 (1.0)
.023
(0.6)
B
C
E
NOTE: Pin2 connected to heatsink
相关型号：
NTE253MCP
TRANSISTOR | BJT | PAIR | DARLINGTON | COMPLEMENTARY | 80V V(BR)CEO | 4A I(C) | TO-126
ETC
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