NTE254 [NTE]
Silicon Complementary Transistors Darlington Power Amplifier; 互补硅达林顿晶体管功率放大器
| 型号： | NTE254 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors Darlington Power Amplifier |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE253 (NPN) & NTE254 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126
type case designed for general–purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A
D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.23°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
V
I = 50mA, I = 0, Note 1
80
–
–
–
–
–
–
–
V
(BR)CEO
C
B
I
I
V
= 80V, I = 0
100
100
500
2.0
µA
µA
µA
mA
CEO
CBO
CE
CE
CE
BE
B
V
V
V
= 80V, I = 0
–
E
= 80V, I = 0, T = +100°C
–
E
C
Emitter Cutoff Current
I
= 5V, I = 0
–
EBO
C
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
NTE253
h
FE
V
CE
V
CE
V
CE
= 3V, I = 1.5A
750
750
100
2000
2000
–
–
–
–
C
NTE254
= 3V, I = 2A
C
NTE253 & NTE253
= 3V, I = 4A
C
Collector–Emitter Saturation Voltage
V
CE(sat)
NTE253
I = 1.5A, I = 30mA
–
–
–
–
–
–
2.5
2.8
3.0
V
V
V
C
B
NTE254
I = 2.0A, I = 40mA
C B
NTE253 & NTE254
I = 4.0A, I = 40mA
C B
Base–Emitter ON Voltage
V
BE(on)
NTE253
V
= 3V, I = 1.5A
–
–
–
–
–
–
2.5
2.5
3.0
V
V
V
CE
CE
CE
C
NTE254
V
V
= 3V, I = 2.0A
C
NTE253 & NTE254
Dynamic Characteristics
Small–Signal Current Gain
= 3V, I = 4.0A
C
|h |
fe
V
CE
= 3V, I = 1.5A, f = 1MHz
1.0
–
–
C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and
NTE254 (PNP).
.330 (8.38)
Max
NTE253
.175
(4.45)
Max
C
E
B
.450
(11.4)
Max
.118 (3.0)
Dia
.655
(16.6)
Max
NTE254
.030 (.762) Dia
C
E
E
C
B
B
.090 (2.28)
.130 (3.3)
Max
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