NTE267 [NTE]
Silicon NPN Transistor High Gain Darlington Power Amp, Switch; 硅NPN晶体管高增益达灵顿功率放大器，开关
| 型号： | NTE267 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor High Gain Darlington Power Amp, Switch |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE267
Silicon NPN Transistor
High Gain Darlington Power Amp, Switch
Features:
D Forward Current Transfer Ratio: hFE = 90,000 min.
D Free–Air Power Dissipation: 1.33W @ TA = +50°C
D Hard Solder Mountdown
Applications:
D Driver
D Oscillator
D Regulator
D IC Driver
D Audio Output
D Relay Substitute
D Touch Switch
D Servo Amplifier
D Capacitor Multiplier
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Collector to Emitter, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter to Base, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V
Collector to Emitter, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, PT
Tab at +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W
Free Air at +50°C w/Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Thermal Resistance, Junction to Case (Note 1), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W
Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL . . . . . . . . . . +260°C
Note 1. Tab temperature is measured on center of tab, 1/16” from plastic body.
Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Forward Current Transfer Ratio
hFE
VCE = 5V, f = 1kHz IC = 200mA 90k
–
–
–
IC = 20mA
Collector Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 0.5mA, Note 2
90k
–
–
–
1.5
2.0
0.5
20
0.1
10
–
V
V
Base Emitter Saturation Voltage
Collector Cutoff Current
VBE(sat) IC = 500mA, IB = 0.5mA
–
–
ICES
ICBO
IEBO
Ccbo
fT
VCE = Rated VCES, TJ = +25°C
VCE = Rated VCES, TJ = +150°C
VEB = 13V
–
–
µA
µA
µA
pF
MHz
–
–
Emitter Cutoff Current
Collector Capacitance
Gain Bandwidth Product
Switching Times
Delay Time and Rise Time
Storage Time
–
–
VCB = 10V, f = 1MHz
–
5
VCE = 5V, IC = 20mA
–
75
td & tr IC = 1A, IB1 = 1mA
–
–
–
100
350
800
–
–
–
ns
ns
ns
ts
tf
IC = 1A, IB1 = IB2 = 1mA
IC = 1A, IB1 = IB2 = 1mA
Fall Time
Note 2. Pulsed measurement, 300µsec pulse width, duty cycle ≤ 2%.
.380 (9.56)
C
.180 (4.57)
.132 (3.35) Dia
.500
(12.7)
.325
(9.52)
1.200
(30.48)
Ref
C
E
B
.070 (1.78) x 45°
Chamf
.300
(7.62)
.050 (1.27)
.400
(10.16)
Min
E
B
C
.100 (2.54)
.100 (2.54)
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