NTE295 [NTE]
Silicon NPN Transistor RF Power Output, Driver; 硅NPN晶体管射频输出功率，驱动器
| 型号： | NTE295 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor RF Power Output, Driver |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE295
Silicon NPN Transistor
RF Power Output, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage (RBE = 150Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
= 40V, I = 0
Min
–
Typ Max Unit
Collector Cutoff Current
I
V
V
–
–
1.0
1.0
–
µA
µA
V
CBO
CB
E
Emitter Cutoff Current
I
= 4V, I = 0
–
EBO
EB
C
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
V
V
V
V
I = 10µA, I = 0
75
75
45
5
–
(BR)CBO
(BR)CER
(BR)CEO
(BR)EBO
C
E
I = 1mA, R = 150Ω
–
–
V
C
BE
I = 1mA, R = ∞
–
–
V
C
BE
Emitter–Base Breakdown Voltage
DC Current Gain
I = 10µA, I = 0
–
–
V
E
C
h
FE
V
= 5V, I = 500mA
60
180
–
–
320
–
CE
CE
C
Current Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Output Capacitance
f
T
V
= 10V, I = 50mA
250
0.2
0.9
15
1.8
–
C
V
I = 500mA, I = 50mA
0.6
1.2
25
–
V
V
CE(sat)
BE(sat)
C
B
V
I = 500mA, I = 50mA
–
C
B
C
ob
V
= 10V, f = 1MHz
–
pF
W
%
CB
CC
Output Power
P
O
V
= 12V, f = 27MHz, P = 35mW
1.0
60
i
Collector Efficiency
η
–
.330 (8.38) Max
.175
(4.45)
Max
.450
(11.4)
Max
.118
(3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max
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