NTE376 [NTE]
Silicon NPN Transistor TV Power Supply Driver/Audio Output; 硅NPN晶体管电视电源驱动器/音频输出
| 型号： | NTE376 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor TV Power Supply Driver/Audio Output |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE376
Silicon NPN Transistor
TV Power Supply Driver/Audio Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –45° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞
300
300
5
–
–
–
–
–
–
–
–
V
V
Emitter–Base Breakdown Voltage
Collector–Base Current
V(BR)EBO IE = 100µA, IC = 0
–
V
ICBO
ICEO
hFE
VCB = 250V, IE = 0
–
0.1
2
µA
µA
–
Collector–Emitter Current
DC Current Gain
VCE = 250V, RBE = ∞
VCE = 10V, IC = 50mA
–
40
–
200
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
VCE(sat) IC = 100mA, IB = 10mA
0.32 1.5
0.66 0.9
V
VBE
fT
VCE = 10V, IC = 50mA
VCE = 20V, IC = 30mA
VCB = 50V, IE = 0, f = 1MHz
–
V
Current Gain–Bandwidth Product
Collector–Base Capacitance
60
–
70
–
8
MHz
pF
Cob
6.2
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
Emitter
Collector/Tab
.100 (2.54)
相关型号：
NTE37MCP
Power Bipolar Transistor, 12A I(C), 140V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
NTE
©2020 ICPDF网 联系我们和版权申明