NTE5492 [NTE]
Silicon Controlled Rectifier (SCR); 可控硅整流器（ SCR）
| 型号： | NTE5492 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Controlled Rectifier (SCR) |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE5491 thru NTE5496
Silicon Controlled Rectifier (SCR)
10 Amp
Description:
The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC
control applications such as motor controls, heating controls, power supplies, or wherever half–wave
silicon gate–controlled, solid–state devices are needed.
Features:
D Glass–Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D Blocking Voltage to 600 Volts
Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified)
Peak Repetitive Off–State Blocking Voltage, VRRM, VDRM
NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Peak Non–Repetitive Reverse Voltage, VRSM
NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 720V
RMS On–State Current (All Conduction Angles), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Average On–State Current (TC = +65°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak Non–Repetitive Surge Current, ITSM
(One cycle, 60Hz, Preceeded and followed by rated Current and Voltage) . . . . . . . . . . 150A
Circuit Fusing Considerations (TJ = –40° to +125°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . 93A2s
Peak Gate Power Dissipation, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Peak Forward Gate Current, IGT
NTE5491, NTE5492, NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A
NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 in.lb.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Average Forward Blocking Current ID(AV) Rated VDRM , Gate Open
NTE5491
NTE5492
NTE5494
NTE5496
TJ = +125°C
–
–
–
–
–
–
–
–
6.5 mA
6.0 mA
4.0 mA
2.5 mA
Average Reverse Blocking Current IR(AV) Rated VRRM , Gate Open
NTE5491
TJ = +125°C
–
–
–
–
–
–
–
–
–
–
–
–
6.5 mA
6.0 mA
4.0 mA
2.5 mA
NTE5492
NTE5494
NTE5496
Peak Forward Blocking Current
Peak Reverse Blocking Current
IDRM Rated VDRM, Gate Open
10
20
µA
IRRM Rated VRRM, Gate Open,
mA
TJ = +125°C
Peak On–State Voltage
DC Gate–Trigger Current
DC Gate–Trigger Voltage
Gate Non–Trigger Voltage
DC Holding Current
VTM
IGT
ITM = 50.3A Peak, Note 1
VAK = 12VDC, RL = 50Ω
VAK = 12VDC, RL = 50Ω
–
–
–
–
–
2
V
mA
V
40
VGT
VGD
IH
0.65 2.0
Rated VDRM, RL = 50Ω, TJ = +125°C 0.25
–
–
V
VAK = 12V, Gate Open
–
–
7.3 50
30
mA
V/µs
Critical Rate–of–Rise of Off–State
dv/dt Rated VDRM, Exponential Waveform,
–
Voltage
TC = +125°C, Gate Open
Note 1. Pulse Test: Pulse Width ≤ 1ms, Duty Cycle ≤ 2%.
.562
(14.28)
Max
Gate
Cathode
1.193
(30.33)
Max
.200 (5.08) Max
.453
(11.5)
Max
Anode
1/4–28 UNF–2A
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