NTE5600 [NTE]
TRIAC, 4 Amp; TRIAC , 4安培型号: | NTE5600 |
厂家: | NTE ELECTRONICS |
描述: | TRIAC, 4 Amp |
文件: | 总2页 (文件大小:24K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTE5600 thru NTE5607
TRIAC, 4 Amp
Description:
The NTE5600 through NTE5607 TRIACs are designed primarily for full–wave AC control applications
such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave
silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a blocking
to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
Features:
D 2 Mode Gate Triggering
D Blocking Voltages to 600V
D All Diffused and Glass Passivated Junctions for Greater Parameters Uniformity and Stability
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TC = +110°C, Note 1), VDRM
NTE5600 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
NTE5601 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5603 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5604 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5605 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5606 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5607 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Surge Current (One Full Cycle, 60Hz, TJ = –40° to +110°C), ITSM . . . . . . . . . . . . . . . . . . . 30A
Circuit Fusing (t = 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7A2s
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Mounting Torque (6–32 Screw, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 in. lb.
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated block-
ing voltage.
Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of
8 in. lb. does not appreciably lower case–to–sink thermal resistance. MT2 and heatsink con-
tact pad are common.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
I
,
Rated V
J
or V
, Gate Open,
–
–
–
–
–
10
µA
mA
V
Peak Forward or Reverse
Blocking Current
DRM
I
DRM
T = +25°C
RRM
RRM
RRM
Rated V
J
or V
, Gate Open,
–
2
DRM
T = +110°C
On–State Voltage (Either Direction)
V
V
I
= 6A Peak
–
2
TM
TM
Peak Gate Trigger Voltage
GT
MT (+), G (+); MT (–), G (–)
Main Terminal Voltage = 12V,
R = 100Ω, T = –40°C
1.4
2.5
V
2
2
MT (+), G (–); MT (–), G (+)
2
2
L
J
Peak Gate Trigger Voltage
MT (+), G (+); MT (–), G (–)
V
GT
Main Terminal Voltage = Rated V ,
DRM
L J
0.2
–
–
–
–
–
V
2
2
MT (+), G (–); MT (–), G (+)
R = 10kΩ, T = +110°C
2
2
Holding Current (Either Direction)
I
Main Terminal Voltage = 12V, Gate Open,
70
30
mA
mA
H
T = –40°C, Initiating Current = 1A
J
Main Terminal Voltage = 12V, Gate Open,
T = +25°C
J
–
Turn–On Time (Either Direction)
t
I
= 14A, I = 100mA
–
–
1.5
5
–
–
µs
on
TM
GT
Blocking Voltage Application
Rate at Commutation
dv/dt
Rated V
, Gate Open, T = +85°C
V/µs
DRM
J
Gate Trigger Current
Quads I & III
I
Main Terminal Voltage = 12V,
R = 100Ω, T = +25°C
–
–
–
–
30
60
mA
mA
GT
L
J
Main Terminal Voltage = 12V,
R = 100Ω, T = –40°C
L
J
.330 (8.38)
Max
.175
(4.45)
Max
.450
(11.4)
Max
.118 (3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
MT MT
G
1
2
.090 (2.28)
.130 (3.3)
Max
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