NTE5661 [NTE]
TRIAC, 10 Amp; 可控硅， 10安培
| 型号： | NTE5661 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | TRIAC, 10 Amp |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE5661
TRIAC, 10 Amp
Description:
The NTE5661 is a TRIAC in a TO64 type stud mount package designed primarily for full–wave AC
control applications such as light dimmers, motor controls, heating controls, power supplies or wher-
ever full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch
from a blocking to a conducting state for either polarity of applied anode voltage with positive or nega-
tive gate triggering.
Features:
D Low “ON” Voltage
D Gate Triggering Guaranteed in Four Modes
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C, Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
On–State RMS Current (TC = +75°C), ITRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Surge Current (One Full Cycle, 60Hz, TJ = –40° to +100°C), ITSM . . . . . . . . . . . . . . . . . . 100A
Circuit Fusing Considerations (TJ = –40° to +100°C, t = 1.0 to 8.3ms), I2t . . . . . . . . . . . . . . 40A2sec
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 in. lb.
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated block-
ing voltage.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Blocking Current (Either Direction)
On–State Voltage (Either Direction)
I
V
= 50V, T = +100°C, Gate Open
–
–
–
2.0 mA
DRM
DRM
J
V
I
= 14A Peak
1.3 1.8
V
TM
GT
TM
Gate Trigger Current, Continuous DC
All Modes
I
Main Terminal Voltage = 12V, R = 100Ω
–
–
–
–
–
40
50
mA
mA
V
L
MT (+), G (+); MT (–), G (–)
2
2
Gate Trigger Voltage, Continuous DC
V
Main Terminal Voltage = 12V, R = 100Ω
0.9 2.0
GT
L
V
GD
Main Terminal Voltage = 50V, R = 100Ω, 0.2
J
–
–
V
L
T = +100°C
Holding Current (Either Direction)
I
H
Main Terminal Voltage = 12V,
Gate Open, Initiating Current = 100mA
–
–
30
mA
Turn–On Time
t
I
= 14A, I = 100mA
–
–
1.5
5.0
–
–
µs
on
TM
GT
Blocking Voltage Application Rate
at Commutation
dv/dt
V
= 50V, T = +75°C, Gate Open
V/µs
DRM
J
.431
(10.98
Max
Gate
MT
1
.855
(21.7)
Max
.125 (3.17) Max
.453
(111.5)
Max
MT
2
10–32 UNF–2A
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