NTE66 [NTE]
MOSFET N-Ch, Enhancement Mode High Speed Switch; MOSFET N-CH ，增强型高速开关
| 型号： | NTE66 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | MOSFET N-Ch, Enhancement Mode High Speed Switch |
| 文件： | 总3页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE66
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Description:
The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
D Lower RDS(ON)
D Improved Inductive Ruggedness
D Fast Switching Times
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximum Ratings:
Drain–Source Voltage (TJ = +25°C to +150°C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain–Gate Voltage (RGS = 1MΩ, TJ = +25°C to +125°C), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A
Pulsed Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.62W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), TL . . . . . . . . . . . . . . . . . . . +300°C
Thermal Resistance, Junction–to–Case, RΘ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.62K/W
JC
Thermal Resistance, Junction–to–Ambient, RΘ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80K/W
JA
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), RΘ
. 0.5K/W
CS
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 0.53mH, Vdd = 25V, RG = 25Ω, Starting TJ = +25°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage BV
V
V
V
V
V
V
= 0V, I = 250µA
100
2.0
–
–
–
–
–
–
–
–
V
V
DSS
GS
DS
GS
GS
DS
DS
D
Gate Threshold Voltage
V
GS(th)
= V , I = 250µA
4.0
100
GS
D
Gate–Source Leakage, Forward
Gate–Source Leakage, Reverse
Zero Gate Voltage Drain Current
I
= 20V
nA
GSS
I
= –20V
–
–100 nA
250 µA
1000 µA
GSS
I
= Max. Rating, V = 0V
–
DSS
GS
= Max. Rating x 0.8, V = 0V,
T = +125°C
–
GS
C
On–State Drain–Source Current
I
V
DS
V
GS
> I
x R
max, V = 10V, Note 1 14
–
–
A
D(on)
D(on)
DS(on)
GS
Static Drain–Source On–State
R
DS(on)
= 10V, I = 8.3A, Note 1
–
0.10 0.16
Ω
D
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
g
V
V
≥ 50V, I = 8.3A, Note 1
5.1 7.6
–
–
mhos
pF
pF
pF
ns
fs
DS
D
C
= 0V, V = 25V, f = 1MHz
–
–
–
–
–
–
–
–
640
240
72
iss
oss
GS
DS
C
–
C
rss
–
t
10
15
51
35
36
26
V
= 0.5BV , I = 8.3A, Z = 12Ω
DSS D O
d(on)
DD
(MOSFET switching times are essentially
independent of operating temperature)
t
34
ns
r
Turn–Off Delay Time
Fall Time
t
23
ns
d(off)
t
24
ns
f
Total Gate Charge
Q
17
nC
V
= 10V, I = 14A, V = 0.8 Max. Rating
D DS
g
GS
(Gate–Source Plus Gate–Drain)
(Gate charge is essentially independent of
operating temperature)
Gate–Source Charge
Q
gs
–
–
3.7
7
5.5
11
nC
nC
Gate–Drain (“Miller”) Charge
Q
gd
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Source–Drain Diode Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
I
–
–
–
–
–
–
–
14
56
A
A
S
I
Note 2
T = +25°C, I = 14A, V = 0V
SM
V
SD
2.5
V
C
S
GS
Reverse Recovery Time
t
rr
T = +25°C, I = 14A, dI /dt = 100A/µs
120 250
ns
J
F
F
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
Source
Drain/Tab
.100 (2.54)
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