74HC2G126 [NXP]
Dual buffer/line driver; 3-state; 双缓冲/线路驱动器;三态
| 型号： | 74HC2G126 |
| 厂家： | 
NXP |
| 描述： | Dual buffer/line driver; 3-state |
| 文件： | 总20页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
74HC2G126; 74HCT2G126
Dual buffer/line driver; 3-state
Product specification
2003 Mar 03
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
FEATURES
DESCRIPTION
• Wide operating voltage from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
The 74HC2G/HCT2G126 is a high-speed Si-gate CMOS
device.
The 74HC2G/HCT2G126 provides one non-inverting
buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input pin (OE). A LOW at
pin OE causes the output as assume a high-impedance
OFF-state.
• Low power dissipation
• Balanced propagation delays
• Very small 8 pins package
• Output capability: bus driver
The bus driver output currents are equal compared to the
74HC/HCT126.
• ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
• Specified from −40 to +85 °C and −40 to +125 °C.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = rf ≤ 6.0 ns.
TYPICAL
SYMBOL
PARAMETER
CONDITIONS
CL = 15 pF; VCC = 5 V
UNIT
HC2G
10
HCT2G
12
tPHL/tPLH
CI
propagation delay nA to nY
input capacitance
ns
pF
pF
pF
pF
1
1
CO
output capacitance
1.5
1.5
11
1
CPD
power dissipation capacitance output enabled; notes 1 and 2 11
per buffer
output disabled; notes 1 and 2
1
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. For the 74HC2G126 the condition is VI = GND to VCC
.
For the 74HCT2G126 the condition is VI = GND to VCC − 1.5 V.
2003 Mar 03
2
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
FUNCTION TABLE
See note 1.
INPUT
OUTPUT
nY
nOE
nA
H
H
L
L
H
X
L
H
Z
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
ORDERING INFORMATION
PACKAGE
TEMPERATURE
TYPE NUMBER
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74HC2G126DP
74HCT2G126DP
74HC2G126DC
74HCT2G126DC
−40 to +125 °C
−40 to +125 °C
−40 to +125 °C
−40 to +125 °C
8
8
8
8
TSSOP8
TSSOP8
VSSOP8
VSSOP8
plastic
plastic
plastic
plastic
SOT505-2
SOT505-2
SOT765-1
SOT765-1
H26
T26
H26
T26
PIN DESCRIPTION
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
1OE
output enable input
data input
1A
2Y
data output
GND
2A
ground (0 V)
data input
1Y
data output
2OE
VCC
output enable input
supply voltage
2003 Mar 03
3
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
handbook, halfpage
handbook, halfpage
1Y
2Y
1OE
1A
1
2
3
4
8
7
6
5
V
1A
CC
2
1
5
7
6
3
1OE
2A
2OE
1Y
126
2Y
2OE
GND
2A
MNA945
MNA946
Fig.1 Pin configuration.
Fig.2 Logic symbol.
2
handbook, halfpage
6
1
handbook, halfpage
1
Y
A
EN1
5
3
7
OE
MNA127
MNA947
Fig.3 Logic symbol (IEEE/IEC).
Fig.4 Logic diagram (one driver).
2003 Mar 03
4
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
RECOMMENDED OPERATING CONDITIONS
74HC2G126
MIN. TYP. MAX. MIN.
2.0
74HCT2G126
SYMBOL
PARAMETER
supply voltage
CONDITIONS
UNIT
TYP. MAX.
VCC
VI
5.0
−
6.0
4.5
0
5.0
−
5.5
V
input voltage
0
0
VCC
VCC
VCC
VCC
V
V
VO
output voltage
−
0
−
Tamb
operating ambient
temperature
see DC and AC −40
characteristics
per device
+25
+125 −40
+25
+125 °C
tr, tf
input rise and fall times
VCC = 2.0 V
VCC = 4.5 V
−
−
−
−
1000
500
−
−
−
−
−
ns
ns
ns
6.0
−
6.0
−
500
−
VCC = 6.0 V
400
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN. MAX. UNIT
VCC
IIK
−0.5
+7.0
±20
±20
25
V
input diode current
output diode current
VI < −0.5 V or VI > VCC + 0.5 V; note 1
VO < −0.5 V or VO > VCC + 0.5 V; note 1
−0.5 V < VO < VCC + 0.5 V; note 1
−
−
−
mA
mA
mA
IOK
IO
output source or sink
current
ICC, IGND VCC or GND current
note 1
−
50
mA
Tstg
PD
storage temperature
−65
−
+150 °C
300 mW
power dissipation per
package
for temperature range from −40 to +125 °C; note 2
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110 °C the value of PD derates linearly with 8 mW/K.
2003 Mar 03
5
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
DC CHARACTERISTICS
Type 74HC2G126
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.(1)
MAX.
UNIT
OTHER
VCC (V)
Tamb = −40 to +85 °C
VIH HIGH-level input voltage
2.0
1.5
1.2
−
−
−
V
4.5
6.0
2.0
4.5
6.0
3.15
4.2
−
2.4
3.2
0.8
2.1
2.8
V
V
V
V
V
VIL
LOW-level input voltage
0.5
−
1.35
1.8
−
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
IO = −20 µA
IO = −20 µA
IO = −6.0 mA
IO = −7.8 mA
2.0
4.5
6.0
4.5
6.0
1.9
2.0
−
−
−
−
−
V
V
V
V
V
4.4
4.5
5.9
6.0
4.13
5.63
4.32
5.81
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA
2.0
4.5
6.0
4.5
6.0
6.0
6.0
−
−
−
−
−
−
−
0
0.1
V
IO = 20 µA
0
0.1
V
IO = 20 µA
0
0.1
V
IO = 6.0 mA
IO = 7.8 mA
VI = VCC or GND
0.15
0.16
−
0.33
0.33
±1.0
±.5.0
V
V
ILI
input leakage current
µA
µA
IOZ
3-state output OFF current VI = VIH or VIL;
VO = VCC or GND
−
ICC
quiescent supply current
VI = VCC or GND;
IO = 0
6.0
−
−
10
µA
2003 Mar 03
6
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
TEST CONDITIONS
OTHER VCC (V)
SYMBOL
PARAMETER
MIN.
TYP.(1)
MAX.
UNIT
Tamb = −40 to +125 °C
VIH
HIGH-level input voltage
LOW-level input voltage
2.0
4.5
6.0
2.0
4.5
6.0
1.5
−
−
−
−
V
3.15
4.2
−
−
−
−
−
−
V
V
V
V
V
VIL
0.5
−
1.35
1.8
−
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
IO = −20 µA
IO = −20 µA
IO = −6.0 mA
IO = −7.8 mA
2.0
4.5
6.0
4.5
6.0
1.9
4.4
5.9
3.7
5.2
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA
2.0
4.5
6.0
4.5
6.0
6.0
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
V
IO = 20 µA
0.1
V
IO = 20 µA
0.1
V
IO = 6.0 mA
IO = 7.8 mA
VI = VCC or GND
0.4
V
0.4
V
ILI
input leakage current
±1.0
±10.4
µA
µA
IOZ
3-state output OFF current VI = VIH or VIL;
VO = VCC or GND
ICC
quiescent supply current
VI = VCC or GND;
IO = 0
6.0
−
−
20
µA
Note
1. All typical values are measured at Tamb = 25°C.
2003 Mar 03
7
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
Type 74HCT2G126
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.(1)
MAX.
UNIT
OTHER
VCC (V)
Tamb = −40 to +85 °C
VIH
VIL
HIGH-level input voltage
LOW-level input voltage
4.5 to 5.5
4.5 to 5.5
2.0
1.6
−
V
−
1.2
0.8
V
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
4.5
4.5
4.4
4.5
−
−
V
V
IO = −6.0 mA
4.13
4.32
VOL
LOW-level output voltage
input leakage current
VI = VIH or VIL
IO = 20 µA
4.5
4.5
5.5
5.5
−
−
−
−
0
0.1
V
IO = 6.0 mA
0.15
−
0.33
±1.0
±5.0
V
ILI
VI = VCC or GND
µA
µA
IOZ
3-state output OFF current VI = VIH or VIL;
VO = VCC or GND
−
ICC
quiescent supply current
VI = VCC or GND;
IO = 0
5.5
−
−
−
−
10
µA
µA
∆ICC
additional supply current
per input
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
375
Tamb = −40 to +125 °C
VIH
VIL
HIGH-level input voltage
LOW-level input voltage
4.5 to 5.5
4.5 to 5.5
2.0
−
−
−
V
V
−
0.8
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
4.5
4.5
4.4
3.7
−
−
−
−
V
V
IO = −6.0 mA
VOL
LOW-level output voltage
input leakage current
VI = VIH or VIL
IO = 20 µA
4.5
4.5
5.5
5.5
−
−
−
−
−
−
−
−
0.1
V
IO = 6.0 mA
0.4
V
ILI
VI = VCC or GND
±1.0
±10.4
µA
µA
IOZ
3-state output OFF current VI = VIH or VIL;
VO = VCC or GND
ICC
quiescent supply current
VI = VCC or GND;
IO = 0
5.5
−
−
−
−
20
µA
µA
∆ICC
additional supply current
per input
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
410
Note
1. All typical values are measured at Tamb = 25°C.
2003 Mar 03
8
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
AC CHARACTERISTICS
Type 74HC2G126
GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF.
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.(1) MAX. UNIT
WAVEFORMS
VCC (V)
Tamb = −40 to +85 °C
tPHL/tPLH propagation delay nA to nY
see Figs 5 and 7
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
−
35
11
8
115
23
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
−
−
−
−
−
−
−
−
−
−
−
20
tPZH/tPZL
tPHZ/tPLZ
tTHL/tTLH
3-state output enable time nOE to nY see Figs 6 and 7
3-state output disable time nOE to nY see Figs 6 and 7
40
11
8
115
23
20
25
12
10
18
6
125
25
21
output transition time
see Figs 5 and 7
75
15
5
13
Tamb = −40 to +125 °C
tPHL/tPLH
propagation delay nA to nY
see Figs 5 and 7
3-state output enable time nOE to nY see Figs 6 and 7
3-state output disable time nOE to nY see Figs 6 and 7
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
135
27
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
23
tPZH/tPZL
135
27
23
tPHZ/tPLZ
150
30
26
tTHL/tTLH
output transition time
see Figs 5 and 7
90
18
15
Note
1. All typical values are measured at Tamb = 25°C.
2003 Mar 03
9
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
Type 74HCT2G126
GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF.
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.(1) MAX. UNIT
WAVEFORMS
VCC (V)
Tamb = −40 to +85 °C
tPHL/tPLH propagation delay nA to nY
see Figs 5 and 7
4.5
4.5
4.5
4.5
−
15
11
11
6
30
31
35
15
ns
ns
ns
ns
tPZH/tPZL
tPHZ/tPLZ
tTHL/tTLH
3-state output enable time nOE to nY see Figs 6 and 7
3-state output disable time nOE to nY see Figs 6 and 7
−
−
−
output transition time
see Figs 5 and 7
Tamb = −40 to +125 °C
tPHL/tPLH
propagation delay nA to nY
see Figs 5 and 7
3-state output enable time nOE to nY see Figs 6 and 7
3-state output disable time nOE to nY see Figs 6 and 7
4.5
4.5
4.5
4.5
−
−
−
−
−
−
−
−
36
38
42
18
ns
ns
ns
ns
tPZH/tPZL
tPHZ/tPLZ
tTHL/tTLH
output transition time
see Figs 5 and 7
Note
1. All typical values are measured at Tamb = 25°C.
AC WAVEFORMS
V
handbook, halfpage
I
V
nA input
M
GND
t
t
PLH
PHL
V
V
OH
I
90%
V
nY output
M
10%
V
OL
t
t
TLH
THL
MNA948
For 74HC2G126: VM = 50%; VI = GND to VCC
For 74HCT2G126: VM = 1.3 V; VI = GND to 3.0 V.
Fig.5 The input (nA) to output (nY) propagation delays.
2003 Mar 03
10
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
V
I
nOE input
V
M
t
GND
t
PLZ
PZL
V
CC
output
LOW-to-OFF
OFF-to-LOW
V
M
V
X
V
OL
t
t
PZH
PHZ
V
OH
V
Y
output
V
HIGH-to-OFF
OFF-to-HIGH
M
GND
outputs
enabled
outputs
enabled
outputs
disabled
MNA949
For 74HC2G126: VM = 50%; VI = GND to VCC
For 74HCT2G126: VM = 1.3 V; VI = GND to 3.0 V.
Fig.6 The 3-state enable and disable times.
S
1
V
CC
open
V
CC
GND
R
=
L
1000 Ω
V
V
O
I
PULSE
D.U.T.
GENERATOR
C
R
L
T
MNA232
TEST
S1
Definitions for test circuit:
CL = Load capacitance including jig and probe capacitance (see “AC characteristics” for values).
L = Load resistance (see “AC characteristics” for values).
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
open
VCC
R
GND
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.7 Load circuitry for switching times.
2003 Mar 03
11
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
PACKAGE OUTLINES
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
SOT505-2
D
E
A
X
c
H
v
M
y
A
E
Z
5
8
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
A
A
A
b
c
D
E
e
H
E
L
L
p
UNIT
v
w
y
Z
θ
1
2
3
p
max.
0.15
0.00
0.95
0.75
0.38
0.22
0.18
0.08
3.1
2.9
3.1
2.9
4.1
3.9
0.47
0.33
0.70
0.35
8°
0°
mm
1.1
0.25
0.65
0.5
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-01-16
SOT505-2
- - -
2003 Mar 03
12
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
SOT765-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
A
1
(A )
3
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
A
A
A
b
c
D
E
e
H
L
L
p
Q
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.15
0.00
0.85
0.60
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
3.2
3.0
0.40
0.15
0.21
0.19
0.4
0.1
8°
0°
mm
1
0.12
0.5
0.4
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-06-07
SOT765-1
MO-187
2003 Mar 03
13
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferably be kept:
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
• below 220 °C for all the BGA packages and packages
with a thickness ≥ 2.5mm and packages with a
thickness <2.5 mm and a volume ≥350 mm3 so called
thick/large packages
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
• below 235 °C for packages with a thickness <2.5 mm
and a volume <350 mm3 so called small/thin packages.
Wave soldering
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
2003 Mar 03
14
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
WAVE
REFLOW(2)
not suitable suitable
PACKAGE(1)
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA
DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, HVQFN, HVSON, SMS
not suitable(3)
suitable
PLCC(4), SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended(4)(5) suitable
not recommended(6)
suitable
SSOP, TSSOP, VSO, VSSOP
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2003 Mar 03
15
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Mar 03
16
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
NOTES
2003 Mar 03
17
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
NOTES
2003 Mar 03
18
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
NOTES
2003 Mar 03
19
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613508/01/pp20
Date of release: 2003 Mar 03
Document order number: 9397 750 10642
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