74LV86PWDH-T [NXP]

暂无描述;
74LV86PWDH-T
型号: 74LV86PWDH-T
厂家: NXP    NXP
描述:

暂无描述

文件: 总10页 (文件大小:107K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
74LV86  
Quad 2-input EXCLUSIVE-OR gate  
Product specification  
1998 Apr 20  
Supersedes data of 1997 Feb 03  
IC24 Data Handbook  
Philips  
Semiconductors  
Philips Semiconductors  
Product specification  
Quad 2-input EXCLUSIVE-OR gate  
74LV86  
FEATURES  
Wide Operating voltage: 1.0 to 5.5 V  
Optimized for low voltage applications: 1.0 to 3.6 V  
Accepts TTL input levels between V = 2.7 V and V = 3.6 V  
DESCRIPTION  
The 74LV86 is a low-voltage Si-gate CMOS device that is pin and  
function compatible with 74HC/HCT86.  
The 74LV86 provides the 2-input EXCLUSIVE-OR function.  
CC  
CC  
Typical V  
(output ground bounce) < 0.8 V at V = 3.3 V,  
OLP  
= 25°C  
CC  
T
amb  
Typical V  
(output V undershoot) > 2 V at V = 3.3 V,  
OHV  
= 25°C  
OH  
CC  
T
amb  
Output capability: standard  
I category: SSI  
CC  
QUICK REFERENCE DATA  
GND = 0 V; T  
= 25°C; t = t 2.5 ns  
amb  
r f  
SYMBOL  
/t  
PARAMETER  
CONDITIONS  
TYPICAL  
UNIT  
Propagation delay  
nA, nB to nY  
C = 15 pF;  
L
CC  
t
11  
ns  
PHL PLH  
V
= 3.3 V  
C
Input capacitance  
3.5  
30  
pF  
pF  
I
1
C
Power dissipation capacitance per gate  
V = GND to V  
I CC  
PD  
NOTE:  
1. C is used to determine the dynamic power dissipation (P in µW)  
PD  
D
2
2
P
= C × V  
× f  (C × V  
  f ) where:  
D
PD  
CC  
i
L
CC o  
f = input frequency in MHz; C = output load capacitance in pF;  
i
L
f = output frequency in MHz; V = supply voltage in V;  
o
CC  
2
ȍ (C × V  
× f ) = sum of the outputs.  
L
CC  
o
ORDERING INFORMATION  
PACKAGES  
TEMPERATURE RANGE OUTSIDE NORTH AMERICA  
NORTH AMERICA  
74LV86 N  
PKG. DWG. #  
SOT27-1  
14-Pin Plastic DIL  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
74LV86 N  
74LV86 D  
14-Pin Plastic SO  
74LV86 D  
SOT108-1  
SOT337-1  
SOT402-1  
14-Pin Plastic SSOP Type II  
14-Pin Plastic TSSOP Type I  
74LV86 DB  
74LV86 PW  
74LV86 DB  
74LV86PW DH  
PIN CONFIGURATION  
LOGIC SYMBOL (IEEE/IEC)  
1
= 1  
3
6
8
1A  
1B  
1Y  
2A  
2B  
2Y  
1
14  
V
CC  
13 4B  
2
2
4
3
4
5
6
7
12  
11  
10  
9
4A  
4Y  
3B  
3A  
= 1  
5
9
= 1  
10  
GND  
8
3Y  
12  
= 1  
11  
SV00481  
13  
SV00479  
2
1998 Apr 20  
853–1892 19255  
Philips Semiconductors  
Product specification  
Quad 2-input EXCLUSIVE-OR gate  
74LV86  
PIN DESCRIPTION  
FUNCTION TABLE  
PIN  
NUMBER  
INPUTS  
OUTPUTS  
nY  
SYMBOL  
FUNCTION  
nA  
nB  
1, 4, 9, 12  
1A – 4A Data inputs  
L
L
L
H
L
L
H
H
2, 5, 10, 13 1B – 4B Data inputs  
3, 6, 8, 11  
1Y – 4Y Data outputs  
GND Ground (0 V)  
H
7
H
H
L
14  
V
Positive supply voltage  
CC  
NOTES:  
H = HIGH voltage level  
= LOW voltage level  
L
LOGIC SYMBOL  
1
2
1A  
1Y  
2Y  
3Y  
3
6
8
LOGIC DIAGRAM (ONE GATE)  
1B  
4
5
2A  
2B  
A
9
3A  
10 3B  
Y
12 4A  
13 4B  
4Y 11  
B
SV00478  
SV00480  
RECOMMENDED OPERATING CONDITIONS  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
1.0  
0
TYP.  
MAX  
UNIT  
V
CC  
DC supply voltage  
See Note 1  
3.3  
5.5  
V
V
V
V
I
Input voltage  
V
CC  
V
CC  
V
O
Output voltage  
0
See DC and AC  
characteristics  
–40  
–40  
+85  
+125  
T
Operating ambient temperature range in free air  
Input rise and fall times  
°C  
amb  
V
V
V
V
= 1.0V to 2.0 V  
= 2.0V to 2.7 V  
= 2.7V to 3.6 V  
= 3.6V to 5.5 V  
500  
200  
100  
50  
CC  
CC  
CC  
CC  
t , t  
r
ns/V  
f
NOTE:  
1. The LV is guaranteed to function down to V = 1.0V (input levels GND or V ); DC characteristics are guaranteed from  
CC  
CC  
V
CC  
= 1.2V to V = 5.5 V.  
CC  
1, 2  
ABSOLUTE MAXIMUM RATINGS  
In accordance with the Absolute Maximum Rating System (IEC 134).  
Voltages are referenced to GND (ground = 0V).  
SYMBOL  
PARAMETER  
DC supply voltage  
CONDITIONS  
RATING  
–0.5 to +7.0  
20  
UNIT  
V
V
CC  
"I  
DC input diode current  
DC output diode current  
V < –0.5 or V > V + 0.5V  
mA  
mA  
IK  
I
I
CC  
"I  
V
O
< –0.5 or V > V + 0.5V  
50  
OK  
O
CC  
DC output source or sink current  
– standard outputs  
"I  
–0.5V < V < V + 0.5V  
mA  
O
O
CC  
25  
DC V or GND current for types with  
– standard outputs  
CC  
"I  
"I  
,
mA  
GND  
50  
CC  
T
stg  
Storage temperature range  
–65 to +150  
°C  
Power dissipation per package  
– plastic DIL  
– plastic mini-pack (SO)  
for temperature range: –40 to +125°C  
above +70°C derate linearly with 12 mW/K  
above +70°C derate linearly with 8 mW/K  
above +60°C derate linearly with 5.5 mW/K  
750  
500  
400  
P
TOT  
mW  
– plastic shrink mini-pack (SSOP and TSSOP)  
NOTES:  
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the  
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to  
absolute-maximum-rated conditions for extended periods may affect device reliability.  
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
3
1998 Apr 20  
Philips Semiconductors  
Product specification  
Quad 2-input EXCLUSIVE-OR gate  
74LV86  
DC ELECTRICAL CHARACTERISTICS  
Over recommended operating conditions. Voltages are referenced to GND (ground = 0 V).  
LIMITS  
MAX  
-40°C to +85°C  
-40°C to +125°C  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
= 1.2 V  
UNIT  
1
MIN  
0.9  
TYP  
MIN  
0.9  
MAX  
V
V
V
V
V
V
V
V
V
V
V
V
V
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
= 2.0 V  
1.4  
1.4  
HIGH level Input  
voltage  
V
IH  
V
= 2.7 to 3.6 V  
= 4.5 to 5.5 V  
= 1.2 V  
2.0  
2.0  
0.7<V  
0.7<V  
CC  
CC  
0.3  
0.6  
0.8  
0.3  
0.6  
0.8  
= 2.0 V  
LOW level Input  
voltage  
V
IL  
V
= 2.7 to 3.6 V  
= 4.5 to 5.5  
0.3<V  
0.3<V  
CC  
CC  
= 1.2 V; V = V or V –I = 100µA  
1.2  
2.0  
2.7  
3.0  
4.5  
I
IH  
IL;  
O
= 2.0 V; V = V or V –I = 100µA  
1.8  
2.5  
2.8  
4.3  
1.8  
2.5  
2.8  
4.3  
I
IH  
IL;  
O
HIGH level output  
voltage; all outputs  
= 2.7 V; V = V or V –I = 100µA  
V
V
V
V
V
V
I
IH  
IL;  
O
OH  
= 3.0 V; V = V or V –I = 100µA  
I
IH  
IL;  
O
= 4.5 V; V = V or V –I = 100µA  
I
IH  
IL;  
O
HIGH level output  
voltage;  
STANDARD  
V
V
= 3.0 V; V = V or V –I = 6mA  
2.40  
3.60  
2.82  
4.20  
2.20  
3.50  
CC  
I
IH  
IL;  
O
OH  
= 4.5 V; V = V or V –I = 12mA  
CC  
I
IH  
IL;  
O
outputs  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= 1.2 V; V = V or V I  
IL; O  
= 100µA  
= 100µA  
= 100µA  
= 100µA  
= 100µA  
0
0
0
0
0
I
IH  
= 2.0 V; V = V or V  
I
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
I
IH  
IL; O  
LOW level output  
voltage; all outputs  
= 2.7 V; V = V or V  
I
V
V
I
IH  
IL; O  
OL  
= 3.0 V; V = V or V I  
IL; O  
I
IH  
= 4.5 V; V = V or V I  
IL; O  
I
IH  
LOW level output  
voltage;  
STANDARD  
V
CC  
V
CC  
V
CC  
= 3.0 V; V = V or V I = 6mA  
IL; O  
0.25  
0.35  
0.40  
0.55  
1.0  
0.50  
0.65  
1.0  
I
IH  
OL  
= 4.5 V; V = V or V I = 12mA  
IL; O  
I
IH  
outputs  
Input leakage  
current  
I
I
= 5.5 V; V = V or GND  
µA  
µA  
I
CC  
Quiescent supply  
current; SSI  
I
V
= 5.5V; V = V or GND; I = 0  
20.0  
500  
40  
CC  
CC  
CC  
I
CC  
O
Additional  
quiescent supply  
current per input  
I  
CC  
V
= 2.7 V to 3.6 V; V = V –0.6 V  
850  
µA  
I
CC  
NOTE:  
1. All typical values are measured at T  
= 25°C.  
amb  
AC CHARACTERISTICS  
GND = 0V; t = t 2.5ns; C = 50pF; R = 1KΩ  
r
f
L
L
LIMITS  
MAX  
CONDITION  
–40 to +85 °C  
–40 to +125 °C  
SYMBOL  
PARAMETER  
WAVEFORM  
UNIT  
1
V
CC  
(V)  
MIN  
TYP  
70  
MIN  
MAX  
1.2  
2.0  
2.7  
24  
32  
24  
19  
16  
41  
30  
24  
20  
Propagation delay  
nA, nB to nY  
18  
t
t
Figure 1  
ns  
PHL/ PLH  
2
3.0 to 3.6  
4.5 to 5.5  
13  
NOTES:  
1. Unless otherwise stated, all typical values are measured at T  
= 25°C.  
amb  
2. Typical values are measured at V = 3.3 V.  
CC  
4
1998 Apr 20  
Philips Semiconductors  
Product specification  
Quad 2-input EXCLUSIVE-OR gate  
74LV86  
AC WAVEFORMS  
TEST CIRCUIT  
V
V
V
= 1.5 V at V 2.7 V and 3.6 V;  
M
CC  
V
cc  
= 0.5 × V at V < 2.7 V and 4.5 V;  
and V are the typical output voltage drop that occur with the  
M
CC  
CC  
OL  
OH  
output load.  
V
V
O
l
V
I
PULSE  
GENERATOR  
D.U.T.  
nA, nB INPUT  
GND  
V
M
50pF  
R = 1k  
L
R
T
C
L
t
t
PLH  
PHL  
V
OH  
Test Circuit for Outputs  
nY OUTPUT  
V
M
DEFINITIONS  
V
OL  
R
L
C
L
R
T
= Load resistor  
SV00477  
= Load capacitance includes jig and probe capacitiance  
= Termination resistance should be equal to Z of pulse generators.  
OUT  
Figure 1. Input (nA, nB) to output (nY) propagation delays  
and the output transition times.  
TEST  
V
V
I
CC  
t
t
< 2.7V  
2.7–3.6V  
4.5 V  
V
CC  
PLH/ PHL  
2.7V  
V
CC  
SV00902  
Figure 2. Load circuitry for switching times.  
5
1998 Apr 20  
Philips Semiconductors  
Product specification  
Quad 2-input EXCLUSIVE-OR gate  
74LV86  
DIP14: plastic dual in-line package; 14 leads (300 mil)  
SOT27-1  
6
1998 Apr 20  
Philips Semiconductors  
Product specification  
Quad 2-input EXCLUSIVE-OR gate  
74LV86  
SO14: plastic small outline package; 14 leads; body width 3.9 mm  
SOT108-1  
7
1998 Apr 20  
Philips Semiconductors  
Product specification  
Quad 2-input EXCLUSIVE-OR gate  
74LV86  
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm  
SOT337-1  
8
1998 Apr 20  
Philips Semiconductors  
Product specification  
Quad 2-input EXCLUSIVE-OR gate  
74LV86  
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm  
SOT402-1  
9
1998 Apr 20  
Philips Semiconductors  
Product specification  
Quad 2-input EXCLUSIVE-OR gate  
74LV86  
Data sheet status  
[1]  
Data sheet  
status  
Product  
status  
Definition  
Objective  
specification  
Development  
This data sheet contains the design target or goal specifications for product development.  
Specification may change in any manner without notice.  
Preliminary  
specification  
Qualification  
This data sheet contains preliminary data, and supplementary data will be published at a later date.  
Philips Semiconductors reserves the right to make chages at any time without notice in order to  
improve design and supply the best possible product.  
Product  
specification  
Production  
This data sheet contains final specifications. Philips Semiconductors reserves the right to make  
changes at any time without notice in order to improve design and supply the best possible product.  
[1] Please consult the most recently issued datasheet before initiating or completing a design.  
Definitions  
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or  
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended  
periods may affect device reliability.  
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips  
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
Disclaimers  
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications  
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.  
RighttomakechangesPhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard  
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless  
otherwise specified.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 1998  
All rights reserved. Printed in U.S.A.  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
print code  
Date of release: 10-98  
9397-750-04415  
Document order number:  
Philips  
Semiconductors  

相关型号:

74LV8T245QWRKSRQ1

Automotive single-supply octal-translating transceiver with tri-state outputs

| RKS | 20 | -40 to 125
TI

74LVC00A

Quad 2-input NAND gate
NXP

74LVC00A

LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE HIGH PERFORMANCE
STMICROELECTR

74LVC00A

QUADRUPLE 2-INPUT NAND GATES
DIODES

74LVC00A

Low-Voltage CMOS Quad 2-Input NAND Gate
ONSEMI

74LVC00A-Q100

Quad 2-input NAND gate
NEXPERIA

74LVC00ABQ

Quad 2-input NAND gate Rev. 7 — 25 April 2012
NXP

74LVC00ABQ

Quad 2-input NAND gateProduction
NEXPERIA

74LVC00ABQ-Q100

Quad 2-input NAND gate
NEXPERIA

74LVC00AD

Quad 2-input NAND gate
NXP

74LVC00AD

Quad 2-input NAND gateProduction
NEXPERIA

74LVC00AD-Q100

Quad 2-input NAND gate
NEXPERIA