933330360115 [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, MPT3, UPAK-3, BIP RF Small Signal;
| 型号： | 933330360115 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, MPT3, UPAK-3, BIP RF Small Signal 放大器 晶体管 |
| 文件： | 总6页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ17
NPN 1 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFQ17
DESCRIPTION
PINNING
PIN
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. The
transistor has extremely good
intermodulation properties and a high
power gain.
DESCRIPTION
Code: FA
page
1
2
3
emitter
collector
base
1
2
3
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
ICM
PARAMETER
CONDITIONS
TYP. MAX. UNIT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
transition frequency
open emitter
open base
−
−
−
−
40
25
300
1
V
V
mA
W
Ptot
up to Ts = 145 °C (note 1)
fT
IC = 150 mA; VCE = 15 V; f = 500 MHz; 1.5
−
GHz
Tj = 25 °C
Cre
feedback capacitance
IC = 10 mA; VCE = 15 V; f = 1 MHz;
1.9
−
pF
Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
MIN. MAX. UNIT
VCBO
VCER
VCEO
VEBO
IC
open emitter
BE ≤ 50 Ω
open base
−
−
−
−
−
−
−
40
40
25
2
V
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
R
V
V
open collector
V
150
300
1
mA
mA
W
°C
°C
ICM
f > 1 MHz
Ptot
up to Ts = 145 °C (note 1)
Tstg
Tj
−65 150
175
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFQ17
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 145 °C (note 1)
30 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
collector-emitter saturation voltage
DC current gain
CONDITIONS
IE = 0; VCB = 20 V; Tj = 50 °C
IC = 100 mA; IB = 10 mA
MIN. TYP. MAX. UNIT
ICBO
VCE sat
hFE
−
−
20
0.5
−
µA
−
−
V
IC = 150 mA; VCE = 5 V
25
−
80
−
Cc
collector capacitance
IE = ie = 0; VCB = 15 V; f = 1 MHz
4
pF
pF
Cre
feedback capacitance
IC = 10 mA; VCE = 15 V;
−
1.9
−
f = 1 MHz; Tamb = 25 °C
fT
transition frequency
IC = 150 mA; VCE = 15 V;
f = 500 MHz
−
−
−
1.5
16
−
−
−
GHz
dB
GUM
maximum unilateral power gain
(note 1)
IC = 60 mA; VCE = 15 V;
f = 200 MHz; Tamb = 25 °C
IC = 60 mA; VCE = 15 V;
6.5
dB
f = 800 MHz; Tamb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFQ17
MBB365
MBB828
160
10
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
8
6
4
120
80
40
0
2
0
40
0
100
200
0
10
20
30
I
(mA)
(V)
C
V
CB
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
VCE = 5 V; Tj = 25 °C.
Fig.2 DC current gain as a function of collector
current.
Fig.3 Collector capacitance as a function of
collector-base voltage.
MBB364
2
handbook, halfpage
f
T
(GHz)
1.6
1.2
0.8
0.4
0
0
40
80
120
160
I
(mA)
C
VCE = 15 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
September 1995
4
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFQ17
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT89
97-02-28
September 1995
5
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFQ17
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
6
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