933334180133 [NXP]
DIODE 0.4 A, 90 V, SILICON, SIGNAL DIODE, DO-35, HERMETIC SEALED, GLASS, SC-40, 2 PIN, Signal Diode;
| 型号： | 933334180133 |
| 厂家： | 
NXP |
| 描述： | DIODE 0.4 A, 90 V, SILICON, SIGNAL DIODE, DO-35, HERMETIC SEALED, GLASS, SC-40, 2 PIN, Signal Diode 局域网 二极管 |
| 文件： | 总8页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAX12
Controlled avalanche diode
1996 Sep 17
Product specification
Supersedes data of April 1996
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The BAX12 is a controlled avalanche diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 90 V
• Repetitive peak reverse voltage:
max. 90 V
handbook, halfpage
k
• Repetitive peak forward current:
a
max. 800 mA
MAM246
• Repetitive peak reverse current:
max. 600 mA
• Capable of absorbing transients
repetitively.
Marking code: BAX12.
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO35) and symbol.
• Switching of inductive loads in
semi-electronic telephone
exchanges.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
note 1
note 1
−
−
−
−
90
90
V
V
IF
see Fig.2; note 2
400
800
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
−
−
55
15
A
t = 100 µs
t = 10 ms
A
−
9
A
Ptot
IRRM
ERRM
Tstg
Tj
total power dissipation
Tamb = 25 °C; note 2
−
450
600
mW
mA
repetitive peak reverse current
repetitive peak reverse energy
storage temperature
−
tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C
−
5.0 mJ
−65
−
+200
200
°C
°C
junction temperature
Notes
1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating.
2. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 17
2
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
see Fig.3
MIN.
MAX.
UNIT
VF
forward voltage
IF = 10 mA
IF = 50 mA
−
−
−
−
−
750
840
900
1.0
mV
mV
mV
V
IF = 100 mA
IF = 200 mA
IF = 400 mA
see Fig.5
1.25
V
IR
reverse current
VR = 90 V
−
−
100
100
170
35
nA
µA
V
VR = 90 V; Tj = 150 °C
IR = 1 mA
V(BR)R
Cd
reverse avalanche breakdown voltage
diode capacitance
120
−
f = 1 MHz; VR = 0;
see Fig.6
pF
trr
reverse recovery time
when switched from
−
50
ns
IF = 30 mA to IR = 30 mA;
RL = 100 Ω; measured at
IR = 3 mA; see Fig.10
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
240
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
K/W
K/W
375
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 17
3
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
GRAPHICAL DATA
MBG455
MBG463
500
600
handbook, halfpage
handbook, halfpage
I
F
I
(mA)
F
(mA)
400
(1) (2)
(3)
400
300
200
100
200
0
0
0
o
0
100
200
1
2
T
( C)
V
(V)
amb
F
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG702
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
4
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
MBG696
7
10
I
R
(nA)
6
10
5
10
4
10
3
10
2
10
10
0
100
o
200
T ( C)
j
VR = 90 V.
Solid line; maximum values. Dotted line; typical values.
Fig.5 Reverse current as a function of junction temperature.
MGD003
MBG701
3
40
10
handbook, halfpage
C
d
(pF)
P
RRM
(W)
30
2
10
(1)
20
10
10
0
0
1
10
−2
−1
10
20
30
10
1
10
t (ms)
V
(V)
R
Solid line; rectangular waveform; δ ≤ 0.01.
Dotted line; triangular waveform; δ ≤ 0.02.
(1) Limited by IRMM = 600 mA.
f = 1 MHz; Tj = 25 °C.
Fig.7 Maximum permissible repetitive peak
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
reverse power as a function of the pulse
duration T ≥ 50 ms; Tj = 25 °C.
1996 Sep 17
5
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
MBG699
handbook, halfpage
V
R
MBG698
600
handbook, halfpage
I
R
(mA)
time
400
(1)
(2)
(3)
(4)
I
R
200
time
t (rectangular waveform)
t
t
T
(triangular
waveform)
δ =
0
100
150
200
V
(V)
T
R
Reverse voltages higher than the VR ratings are allowed, provided:
a. The transient energy ≤ 7.5 mJ at PRRM ≤30 W; Tj = 25 °C;
the transient energy ≤ 5 mJ at PRRM = 120 W; Tj = 25 °C (see Fig.7).
b. T ≥ 50 ms; δ ≤0.01 (rectangular waveform) (see Fig.9).
δ ≤0.02 (triangular waveform) (see Fig.9).
With increasing temperature, the maximum permissible transient
energy must be decreased by 0.03 mJ/K.
(1) Tj = 25 °C; minimum values.
(2) Tj = 175 °C; minimum values.
(3) Tj = 25 °C; maximum values.
(4) Tj = 175 °C; maximum values.
Fig.8 Reverse current as a function of continuous
reverse voltage.
Fig.9 Peak reverse voltage and current test
pulses.
1996 Sep 17
6
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
Input signal: reverse pulse rise time tr = 0.6 ns; reverse pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Circuit capacitance: C ≤ 1 pF (oscilloscope input capacitance + parasitic capacitance).
(1) IR = 3 mA.
Fig.10 Reverse recovery voltage test circuit and waveforms.
1996 Sep 17
7
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
PACKAGE OUTLINE
0.56
max
1.85
max
4.25
max
MLA428 - 1
25.4 min
25.4 min
Dimensions in mm.
Fig.11 SOD27 (DO-35).
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 17
8
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