933742310235 [NXP]
DIODE 60 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode;
| 型号： | 933742310235 |
| 厂家： | 
NXP |
| 描述： | DIODE 60 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode 光电二极管 |
| 文件： | 总8页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS56
High-speed double diode
1996 Sep 10
Product specification
Supersedes data of April 1996
Philips Semiconductors
Product specification
High-speed double diode
BAS56
FEATURES
DESCRIPTION
PINNING
PIN
• Small plastic SMD package
The BAS56 consists of two high-
speed switching diodes fabricated in
planar technology, and encapsulated
in the small rectangular plastic SMD
SOT143 package. The diodes are not
connected.
DESCRIPTION
• High switching speed: max. 6 ns
1
2
3
4
cathode (k1)
cathode (k2)
anode (a2)
anode (a1)
• Continuous reverse voltage:
max. 60 V
• Repetitive peak reverse voltage:
max. 60 V
• Repetitive peak forward current:
max. 600 mA.
handbook, hge
4
3
4
3
2
APPLICATIONS
• High speed switching in e.g.
surface mounted circuits.
1
1
2
MAM059
Top view
Marking code: L51.
Fig.1 Simplified outline (SOT143) and symbol.
1996 Sep 10
2
Philips Semiconductors
Product specification
High-speed double diode
BAS56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VRRM
VR
repetitive peak reverse voltage
repetitive peak reverse voltage
continuous reverse voltage
continuous reverse voltage
continuous forward current
−
60
120
60
V
V
V
V
series connection
−
−
−
VR
series connection
120
200
IF
single diode loaded; see Fig.2;
note 1
mA
double diode loaded; see Fig.2;
note 1
−
150
mA
IFRM
repetitive peak forward current
single diode loaded
double diode loaded
−
−
600
430
mA
mA
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
−
−
9
3
A
t = 100 µs
t = 10 ms
A
−
1.7
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
250
+150
150
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10
3
Philips Semiconductors
Product specification
High-speed double diode
BAS56
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3; IF = 200 mA; DC value;
note 1
−
1.0
V
IR
reverse current
see Fig.5
VR = 60 V
−
−
−
−
−
−
−
100
100
nA
VR = 60 V; Tj = 150 °C
series connection
VR = 120 V
µA
IR
reverse current
100
100
2.5
6
nA
µA
pF
ns
VR = 120 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 400 mA to
IR = 400 mA; RL = 100 Ω;
measured at IR = 40 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 400 mA;
tr = 30 ns; see Fig.8
−
−
2.0
1.5
V
V
when switched from IF = 400 mA;
tr = 100 ns; see Fig.8
Note
1. Tamb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
360
UNIT
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
500
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10
4
Philips Semiconductors
Product specification
High-speed double diode
BAS56
GRAPHICAL DATA
MBG439
MBH279
300
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
200
200
(1)
100
100
(2)
0
0
0
o
0
100
200
1
2
T
( C)
V
(V)
amb
F
Device mounted on a FR4 printed-circuit board.
(1) Single diode loaded.
Tj = 25 °C.
(2) Double diode loaded.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3 Forward current as a function of forward
voltage; typical values.
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 10
5
Philips Semiconductors
Product specification
High-speed double diode
BAS56
MBH283
MBH282
2
10
2.0
handbook, halfpage
handbook, halfpage
I
C
d
R
(µA)
(pF)
1.5
10
(1)
(2)
1
1.0
0.5
−1
10
10
−2
0
0
o
0
100
200
10
20
30
T ( C)
j
V
(V)
R
(1) VR = 60 V; maximum values.
(2) VR = 60 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of
junction temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 10
6
Philips Semiconductors
Product specification
High-speed double diode
BAS56
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 40 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Input signal: forward pulse duration tp = 300 ns; duty factor δ = 0.01.
Fig.8 Forward recovery voltage test circuit and waveforms.
7
1996 Sep 10
Philips Semiconductors
Product specification
High-speed double diode
BAS56
PACKAGE OUTLINE
3.0
2.8
B
0.150
0.090
1.9
A
B
M
0.2
0.75
0.60
A
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.9 SOT143.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 10
8
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