933743270133 [NXP]

1A, 40V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2;
933743270133
型号: 933743270133
厂家: NXP    NXP
描述:

1A, 40V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2

二极管
文件: 总4页 (文件大小:20K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
page  
BYV10 series  
Schottky barrier diodes  
1996 May 13  
Product specification  
Supersedes data of April 1992  
Philips Semiconductors  
Product specification  
Schottky barrier diodes  
BYV10 series  
FEATURES  
DESCRIPTION  
Low switching losses  
Fast recovery time  
Guard ring protected  
The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in  
planar technology, and encapsulated in SOD81 hermetically sealed glass  
packages incorporating ImplotecTM(1) technology.  
Hermetically sealed leaded glass  
(1) Implotec is a trademark of Philips.  
package.  
APPLICATIONS  
k
a
handbook, 4 columns  
Low power, switched-mode power  
supplies  
MAM218  
Rectifying  
Fig.1 Simplified outline (SOD81) and symbol.  
Polarity protection.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
repetitive peak reverse voltage  
BYV10-20  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
20  
V
V
V
A
BYV10-30  
30  
BYV10-40  
40  
IF(AV)  
Tstg  
Tj  
note 1  
1
average forward current  
storage temperature  
junction temperature  
+150  
125  
°C  
°C  
65  
Note  
1. Refer to SOD81 standard mounting conditions.  
1996 May 13  
2
Philips Semiconductors  
Product specification  
Schottky barrier diodes  
BYV10 series  
ELECTRICAL CHARACTERISTICS  
T
amb = 25 °C; unless otherwise specified.  
SYMBOL PARAMETER  
forward voltage  
CONDITIONS  
MIN.  
TYP.  
MAX.  
390  
UNIT  
mV  
VF  
IF = 0.1 A  
IF = 1 A  
IF = 3 A  
550  
850  
1
mV  
mV  
mA  
pF  
IR  
reverse current  
VR = VRRMmax; note 1  
VR = 0 V; f = 1 MHz  
Cd  
diode capacitance  
220  
Note  
1. Pulsed test: tp = 300 µs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
UNIT  
K/W  
Rth j-a  
thermal resistance from junction to ambient  
100  
Note  
1. Refer to SOD81 standard mounting conditions.  
1996 May 13  
3
Philips Semiconductors  
Product specification  
Schottky barrier diodes  
BYV10 series  
PACKAGE OUTLINE  
5 max  
0.81  
max  
2.15  
max  
MBC051  
28 min  
3.8 max  
28 min  
Dimensions in mm.  
Fig.2 SOD81.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 May 13  
4

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