933829190126 [NXP]

Silicon Controlled Rectifier, 0.8 A, 400 V, SCR, TO-92, PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN;


型号：	933829190126
厂家：	NXP
描述：	Silicon Controlled Rectifier, 0.8 A, 400 V, SCR, TO-92, PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN 栅栅极
文件：	总6页 (文件大小：45K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Thyristors

logic level

BT169 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

SYMBOL PARAMETER

BT169

Passivated, sensitive gate thyristors

inaplasticenvelope,intendedforuse

in general purpose switching and

phase control applications. These

devices are intended to be interfaced

directly to microcontrollers, logic

integrated circuits and other low

power gate trigger circuits.

MAX MAX MAX MAX UNIT

V_DRM

V_RRM

I_T(AV)

Repetitive peak

off-state voltages

Average on-state

current

200 400 500 600

0.5

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

0.8

PINNING - TO92 variant

PIN CONFIGURATION

SYMBOL

DESCRIPTION

anode

gate

cathode

2 1

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DRM, V_RRMRepetitive peak off-state

voltages

200¹

400¹

500¹

600¹

I_T(AV)

Average on-state current half sine wave;

_lead≤ 83 ˚C

RMS on-state current

Non-repetitive peak

on-state current

0.5

I_T(RMS)

I_TSM

all conduction angles

t = 10 ms

0.8

t = 8.3 ms

half sine wave;

T_j= 25 ˚C prior to surge

t = 10 ms

I²t

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

0.32

A²s

dI_T/dt

I_TM= 2 A; I_G= 10 mA;

dI_G/dt = 100 mA/µs

A/µs

I_GM

˚C

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

0.1

150

125

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 2001

Rev 1.500

Philips Semiconductors

Product specification

Thyristors

logic level

BT169 series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-lead}

Thermal resistance

junction to lead

K/W

R_{th j-a}

Thermal resistance

junction to ambient

pcb mounted; lead length = 4mm

150

K/W

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_GT

I_L

Gate trigger current

Latching current

Holding current

V_D= 12 V; I_T= 10 mA; gate open circuit

V_D= 12 V; I_GT= 0.5 mA; R_GK= 1 kΩ

I_T= 1 A

V_D= 12 V; I_T= 10 mA; gate open circuit

V_D= V_DRM(max); I_T= 10 mA; T_j= 125 ˚C;

gate open circuit

200

µA

I_H

V_T

V_GT

On-state voltage

Gate trigger voltage

1.2

0.5

0.3

1.35

0.8

0.2

I_D, I_R

Off-state leakage current V_D= V_DRM(max); V_R= V_RRM(max); T_j= 125 ˚C;

_GK= 1 kΩ

0.05

0.1

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

dV_D/dt

Critical rate of rise of

off-state voltage

Gate controlled turn-on

time

Circuit commutated

turn-off time

V_DM= 67% V_DRM(max); T_j= 125 ˚C;

exponential waveform; R_GK= 1 kΩ

I_TM= 2 A; V_D= V_DRM(max); I_G= 10 mA;

dI_G/dt = 0.1 A/µs

V_D= 67% V_DRM(max); T_j= 125 ˚C;

I_TM= 1.6 A; V_R= 35 V; dI_TM/dt = 30 A/µs;

dV_D/dt = 2 V/µs; R_GK= 1 kΩ

500

800

V/µs

µs

t_gt

t_q

100

µs

September 2001

Rev 1.500

Philips Semiconductors

Product specification

Thyristors

logic level

BT169 series

ITSM / A

Tc(max) / C

Ptot / W

0.8

conduction form

a = 1.57

TSM

time

angle

factor

0.7

0.6

0.5

0.4

0.3

0.2

0.1

degrees

1.9

120

180

2.8

2.2

1.9

1.57

2.2

Tj initial = 25 C max

2.8

101

107

113

119

125

0.1

0.2

0.3

0.4

IF(AV) / A

0.5

0.6

0.7

100

1000

Number of half cycles at 50Hz

Fig.1. Maximum on-state dissipation, P_tot, versus

average on-state current, I_T(AV), where

Fig.4. Maximum permissible non-repetitive peak

on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

a = form factor = I_T(RMS)/ I_T(AV)

ITSM / A

IT(RMS) / A

1000

100

1.5

TSM

time

0.5

Tj initial = 25 C max

10ms

10us

100us

1ms

0.01

0.1

surge duration / s

T / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I_TSM, versus pulse width t_p, for

sinusoidal currents, t_p≤ 10ms.

Fig.5. Maximum permissible repetitive rms on-state

current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_lead≤ 83˚C.

IT(RMS) / A

VGT(Tj)

VGT(25 C)

1.6

83 C

0.8

1.4

1.2

0.6

0.4

0.2

0.8

0.6

0.4

-50

Tlead / C

100

150

-50

Tj / C

100

150

Fig.3. Maximum permissible rms current I_T(RMS)

versus lead temperature, T_lead

Fig.6. Normalised gate trigger voltage

V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.

September 2001

Rev 1.500

Philips Semiconductors

Product specification

Thyristors

logic level

BT169 series

IGT(Tj)

IGT(25 C)

IT / A

Tj = 125 C

Tj = 25 C

2.5

Vo = 1.067 V

Rs = 0.187 ohms

typ

max

1.5

0.5

1.5

2.5

-50

Tj / C

100

150

VT / V

Fig.7. Normalised gate trigger current

I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.

Fig.10. Typical and maximum on-state characteristic.

Zth j-lead (K/W)

100

IL(Tj)

IL(25 C)

2.5

1.5

0.1

0.5

0.01

10us

0.1ms

1ms

10ms

tp / s

0.1s

10s

-50

Tj / C

100

150

Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C),

Fig.11. Transient thermal impedance Z_{th j-lead}, versus

pulse width t_p.

versus junction temperature T_j, R_GK= 1 kΩ.

dVD/dt (V/us)

10000

IH(Tj)

IH(25 C)

RGK = 1 kohms

2.5

1000

1.5

100

0.5

150

100

-50

Tj / C

100

150

Tj / C

Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),

Fig.12. Typical, critical rate of rise of off-state voltage,

dV_D/dt versus junction temperature T_j.

versus junction temperature T_j, R_GK= 1 kΩ.

September 2001

Rev 1.500

Philips Semiconductors

Product specification

Thyristors

logic level

BT169 series

MECHANICAL DATA

Plastic single-ended leaded (through hole) package; 3 leads

SOT54

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

5.2

5.0

0.48

0.40

0.66

0.56

0.45

0.40

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

2.5

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

97-02-28

SOT54

TO-92

SC-43

Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g

Notes

1. Epoxy meets UL94 V0 at 1/8".

September 2001

Rev 1.500

Philips Semiconductors

Product specification

Thyristors

logic level

BT169 series

DEFINITIONS

DATA SHEET STATUS

DATA SHEET

STATUS²

PRODUCT

DEFINITIONS

STATUS³

Objective data

Development

This data sheet contains data from the objective specification for

product development. Philips Semiconductors reserves the right to

change the specification in any manner without notice

Preliminary data

Qualification

Production

This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the specification without

notice, in ordere to improve the design and supply the best possible

product

Product data

This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in

order to improve the design, manufacturing and supply. Changes will

be communicated according to the Customer Product/Process

Change Notification (CPCN) procedure SNW-SQ-650A

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.

3 The product status of the device(s) described in this datasheet may have changed since this datasheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

September 2001

Rev 1.500

933829190126 [NXP]

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