933912210215 [NXP]

SILICON, UHF BAND, MIXER DIODE;
933912210215
型号: 933912210215
厂家: NXP    NXP
描述:

SILICON, UHF BAND, MIXER DIODE

光电二极管
文件: 总5页 (文件大小:46K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
ook, halfpage  
PMBD352; PMBD353  
Schottky barrier double diodes  
1996 Mar 20  
Product specification  
Supersedes data of January 1995  
File under Discrete Semiconductors, SC01  
Philips Semiconductors  
Product specification  
Schottky barrier double diodes  
PMBD352; PMBD353  
FEATURES  
PINNING  
PIN  
Low forward voltage  
Small SMD package  
Low capacitance.  
DESCRIPTION  
PMBD352 (see Fig.2)  
3
fpage  
1
2
3
a1  
k2  
1
2
APPLICATIONS  
k1, a2  
MLC358  
UHF mixer  
PMBD353 (see Fig.3)  
Sampling circuits  
Modulators  
1
2
3
k1  
a2  
Fig.2 PMBD352 diode  
configuration (symbol).  
Phase detection.  
a1, k2  
DESCRIPTION  
3
Planar Schottky barrier double diodes  
in series connection with different  
pinning.  
3
The diodes are encapsulated in a  
SOT23 small plastic SMD package.  
1
2
1
2
MGC487  
MARKING  
Top view  
MGC421  
TYPE  
MARKING CODE  
NUMBER  
Fig.1 Simplified outline  
(SOT23) and pin  
configuration.  
Fig.3 PMBD353 diode  
configuration (symbol).  
PMBD352  
PMBD353  
p5g  
p4f  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
MIN.  
MAX.  
UNIT  
Per diode  
VR  
IF  
continuous reverse voltage  
continuous forward current  
storage temperature  
4
V
30  
mA  
°C  
Tstg  
Tj  
+150  
100  
65  
junction temperature  
°C  
1996 Mar 20  
2
Philips Semiconductors  
Product specification  
Schottky barrier double diodes  
PMBD352; PMBD353  
ELECTRICAL CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL PARAMETER  
CONDITIONS  
MAX.  
UNIT  
Per diode  
VF  
forward voltage  
reverse current  
see Fig.4  
IF = 0.1 mA  
350  
mV  
IF = 1 mA  
450  
600  
0.25  
1
mV  
mV  
µA  
pF  
IF = 10 mA  
IR  
VR = 3 V; note 1; see Fig.5  
f = 1 MHz; VR = 0 V; see Fig.6  
Cd  
diode capacitance  
Note  
1. Pulsed test: tp = 300 µs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient note 1  
CONDITIONS  
VALUE  
UNIT  
K/W  
Rth j-a  
500  
Note  
1. Refer to SOT23 standard mounting conditions.  
1996 Mar 20  
3
Philips Semiconductors  
Product specification  
Schottky barrier double diodes  
PMBD352; PMBD353  
GRAPHICAL DATA  
MLC795  
MLC796  
4
2
10  
10  
handbook, halfpage  
handbook, halfpage  
I
R
(nA)  
I
F
(mA)  
3
(1)  
10  
10  
(2)  
(3)  
2
10  
(1)  
(2)  
(3)  
(4)  
1
1
10  
1
(4)  
10  
10  
2
1
10  
0
200  
400  
600  
800  
0
1
2
3
V
(V)  
R
V
(V)  
F
(1) Tamb = 100 °C.  
(2) Tamb = 60 °C.  
(1) Tamb = 100 °C.  
(2)  
Tamb = 60 °C.  
(3)  
Tamb = 25 °C.  
(3) Tamb = 25 °C.  
(4) Tamb = 40 °C.  
(4) Tamb = 40 °C.  
Fig.4 Forward current as a function of forward  
voltage; typical values.  
Fig.5 Reverse current as a function of reverse  
voltage; typical values.  
MLC797  
0.8  
handbook, halfpage  
C
d
(pF)  
0.7  
0.6  
0.5  
0.4  
0
1
2
3
4
(V)  
V
R
f = 1 MHz; Tamb = 25 °C.  
Fig.6 Diode capacitance as a function of reverse  
voltage; typical values.  
1996 Mar 20  
4
Philips Semiconductors  
Product specification  
Schottky barrier double diodes  
PMBD352; PMBD353  
PACKAGE OUTLINE  
3.0  
2.8  
o
B
1.9  
0.150  
0.090  
A
B
M
0.2  
0.75  
0.60  
0.95  
A
2
1
0.1  
max  
o
10  
max  
2.5  
max  
1.4  
1.2  
o
10  
max  
3
1.1  
max  
0
0.1  
0.48  
0.1 M A B  
o
MBC846  
30  
max  
TOP VIEW  
Dimensions in mm.  
Fig.7 SOT23.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Mar 20  
5

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