933930000112 [NXP]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power;
| 型号： | 933930000112 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power 局域网 放大器 晶体管 |
| 文件： | 总12页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF147
VHF power MOS transistor
Product specification
2001 May 23
Supersedes data of September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
FEATURES
PIN CONFIGURATION
• High power gain
• Low intermodulation distortion
• Easy power control
ook, halfpage
4
3
• Good thermal stability
• Withstands full load mismatch.
d
DESCRIPTION
g
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.
s
MBB072
1
2
MLA876
The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Fig.1 Simplified outline and symbol.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to 'General' section for further
information.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PINNING - SOT121
Product and environmental safety - toxic materials
PIN
DESCRIPTION
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
1
2
3
4
drain
source
gate
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
d3
(dB)
d5
(dB)
(MHz)
SSB, class-AB
CW, class-B
28
28
28
150 (PEP)
150
> 17
> 35
< −30
< −30
108
typ. 14
typ. 70
−
−
2001 May 23
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
65
UNIT
−
−
−
−
V
±VGS
ID
gate-source voltage
DC drain current
20
V
25
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
up to Tmb = 25 °C
220
150
200
W
°C
°C
−65
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
0.8 K/W
0.2 K/W
MGP049
MRA904
2
10
300
handbook, halfpage
handbook, halfpage
P
tot
I
D
(W)
(A)
(1)
(2)
200
(1)
(2)
10
100
1
1
0
0
2
10
10
50
100
150
V
(V)
DS
T
(°C)
h
(1) Current is this area may be limited by RDS(on)
.
(1) Short-time operation during mismatch.
(2) Continuous operation.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
2001 May 23
3
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
ID = 100 mA; VGS = 0
VGS = 0; VDS = 28 V
±VGS = 20 V; VDS = 0
ID = 200 mA; VDS = 10 V
65
−
−
−
−
−
−
−
V
IDSS
5
mA
µA
V
IGSS
−
1
VGS(th)
∆VGS
2
4.5
100
gate-source voltage difference of ID = 100 mA; VDS = 10 V
matched pairs
−
mV
gfs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
ID = 8 A; VDS = 10 V
5
−
−
−
−
−
7.5
0.1
37
−
S
RDS(on)
IDSX
Cis
ID = 8 A; VGS = 10 V
0.15
−
Ω
VGS = 10 V; VDS = 10 V
A
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
450
360
55
−
pF
pF
pF
Cos
output capacitance
−
Crs
feedback capacitance
−
MGP051
MGP050
60
0
handbook, halfpage
handbook, halfpage
T.C.
I
(mV/K)
D
(A)
−1
40
−2
−3
−4
−5
20
0
−2
−1
0
5
10
15
20
10
10
1
10
V
(V)
GS
I
(A)
D
VDS = 28 V; valid for Th = 25 to 70 °C.
VDS = 10 V.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
2001 May 23
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP052
MRA903
1400
170
handbook, halfpage
handbook, halfpage
C
(pF)
R
DS (on)
(mΩ)
1200
800
150
130
110
90
C
C
is
400
os
0
0
10
20
30
40
0
50
100
150
T (°C)
V
(V)
j
DS
ID = 8 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
function of junction temperature, typical
values.
MRA902
500
handbook, halfpage
C
rs
(pF)
400
300
200
100
0
0
10
20
30
40
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
2001 May 23
5
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 9.8 Ω; unless otherwise specified.
RF performance in SSB operation in a common source class-AB circuit.
f1 = 28.000 MHz; f2 = 28.001 MHz.
d3
(dB)
(note 2)
d5
(dB)
(note 2)
PL
(W)
f
VDS
(V)
IDQ
(A)
Gp
(dB)
ηD
(%)
(MHz)
20 to 150 (PEP)
28
28
1
> 17
> 35
< −30
< −30
typ. 19
typ. 40
typ. −34
typ. −40
Notes
1. Optimum load impedance: 2.1 + j0 Ω.
2. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF147 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
VDS = 28 V; f = 28 MHz at rated load power.
MGP054
MGP053
60
30
handbook, halfpage
handbook, halfpage
η
D
(%)
G
p
(dB)
40
20
20
0
0
10
0
100
200
100
200
P
(W) PEP
P (W) PEP
L
L
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.9 Gain as a function of load power, typical
values.
Fig.10 Efficiency as a function of load power,
typical values.
2001 May 23
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP055
MGP056
−20
−20
handbook, halfpage
handbook, halfpage
d
d
5
3
(dB)
(dB)
−30
−30
−40
−40
−50
−50
−60
−60
0
100
200
0
100
200
P
(W) PEP
P
(W) PEP
L
L
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.11 Third order intermodulation distortion as a
function of load power, typical values.
Fig.12 Fifth order intermodulation distortion as a
function of load power, typical values.
C8
L7
C10
C11
C12
C14
L3
D.U.T.
output
50 Ω
C2
C1
L2
L1
input
C15
C13
50 Ω
C9
C3
R1
R3
R2
C4
L4
C5
L5
C6
R5
R4
L6
C7
+V
G
+V
MGP057
D
f = 28 MHz.
Fig.13 Test circuit for class-AB operation.
2001 May 23
7
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
List of components (class-AB test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C3, C13, C14 film dielectric trimmer
7 to 100 pF
75 pF
2222 809 07015
C2, C8, C9
multilayer ceramic chip capacitor
(note 1)
C4, C5
C6
multilayer ceramic chip capacitor
100 nF
2222 852 47104
2222 852 47104
multilayer ceramic chip capacitors in 3 × 100 nF
parallel
C7
electrolytic capacitor
2.2 µF, 63 V
C10
multilayer ceramic chip capacitor
(note 1)
100 pF
C11, C12
C15
multilayer ceramic chip capacitor
(note 1)
150 nF
240 pF
145 nH
multilayer ceramic chip capacitor
(note 1)
L1
6 turns enamelled 0.7 mm copper
wire
length 5 mm;
int. dia. 6 mm;
leads 2 × 5 mm
L2, L3
L4
stripline (note 2)
41.1 Ω
length 13 × 6 mm
4 turns enamelled 1.5 mm copper
wire
148 nH
length 8 mm;
int. dia. 10 mm;
leads 2 × 5 mm
L5, L6
L7
grade 3B Ferroxcube wideband HF
choke
4312 020 36642
3 turns enamelled 2.2 mm copper
wire
79 nH
length 8 mm;
int. dia. 8 mm;
leads 2 × 5 mm
R1, R2
R3
1 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
1 W metal film resistor
19.6 Ω
10 kΩ
1 MΩ
10 Ω
2322 153 51969
2322 151 71003
2322 151 71005
2322 153 51009
R4
R5
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1.6 mm.
2001 May 23
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP058
MGP059
30
10
handbook, halfpage
handbook, halfpage
G
P
Z
i
(dB)
(Ω)
20
5
r
i
10
0
x
i
0
−5
0
10
20
30
0
10
20
30
f (MHz)
f (MHz)
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.
Fig.14 Gain as a function of frequency, typical
values.
Fig.15 Input impedance as a function of frequency
(series components), typical values.
MGP061
MGP062
4
3
handbook, halfpage
handbook, halfpage
Z
i
Z
L
(Ω)
(Ω)
2
2
r
i
R
L
0
1
x
i
X
L
−2
−4
0
−1
0
50
100
150
200
0
50
100
150
200
f (MHz)
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS = 15 Ω; PL = 150 W.
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS = 15 Ω; PL = 150 W.
Fig.16 Input impedance as a function of frequency
(series components), typical values.
Fig.17 Load impedance as a function of frequency
(series components), typical values.
2001 May 23
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP060
30
handbook, halfpage
G
p
(dB)
20
10
0
0
50
100
150
200
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS = 15 Ω; PL = 150 W.
Fig.18 Power gain as a function of frequency,
typical values.
2001 May 23
10
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT121B
D
A
F
D
1
q
C
U
1
B
c
H
b
w
M
M
C
2
4
3
α
A
U
U
p
3
2
w
M
M
M
B
A
1
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
F
H
p
Q
q
U
U
U
w
1
w
2
α
UNIT
1
1
2
3
5.82
5.56
12.83
12.57
7.27
6.17
12.86
12.59
2.67 28.45 3.30
2.41 25.52 3.05
4.45
3.91
24.90 6.48 12.32
24.63 6.22 12.06
0.16
0.10
18.42
0.51
0.25
mm
45°
0.229
0.219
0.505
0.495
0.286
0.243
0.506
0.496
0.105 1.120 0.130
0.095 1.005 0.120
0.255 0.485
0.245 0.475
0.006
0.004
0.175
0.154
0.98
0.97
0.725
0.01 0.02
inches
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT121B
99-03-29
2001 May 23
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Brazil: see South America
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Czech Republic: see Austria
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 7 - 9 Rue du Mont Valérien, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4728 6600, Fax. +33 1 4728 6638
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A,
Tel: +36 1 382 1700, Fax: +36 1 382 1800
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
Tel. +39 039 203 6838, Fax +39 039 203 6800
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
72
SCA
© Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp12
Date of release: 2001 May 23
Document order number: 9397 750 08411
相关型号：
933930010112
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power
NXP
©2020 ICPDF网 联系我们和版权申明