933978490114 [NXP]
2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-4;
| 型号： | 933978490114 |
| 厂家： | 
NXP |
| 描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-4 局域网 放大器 CD 晶体管 |
| 文件： | 总18页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF368
VHF push-pull power MOS
transistor
Product specification
2003 Sep 26
Supersedes data of 1998 Jul 29
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
FEATURES
PIN CONFIGURATION
• High power gain
• Easy power control
• Good thermal stability
1
2
d
2
ndbook, halfpage
• Gold metallization ensures
excellent reliability.
g
g
2
s
1
d
1
5
5
DESCRIPTION
3
4
MBB157
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
MSB008
Top view
Fig.1 Simplified outline and symbol.
The transistor is encapsulated in a
4-lead SOT262A1 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
PINNING - SOT262A1
WARNING
PIN
DESCRIPTION
drain 1
Product and environmental safety - toxic materials
1
2
3
4
5
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
drain 2
gate 1
gate 2
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
∆Gp
(dB)
(note 1)
ηD
(%)
f
VDS
(V)
PL
(W)
Gp
(dB)
MODE OF OPERATION
CW, class-AB
(MHz)
225
32
300
>12
>1
>55
typ. 13.5
typ. 0.4
typ. 62
Note
1. Assuming a third order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
2003 Sep 26
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section unless otherwise specified
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current (DC)
−
−
−
65
V
±20
25
V
A
Ptot
Tstg
Tj
total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded −
500
+150
200
W
°C
°C
storage temperature
junction temperature
−65
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base total device; both sections
equally loaded
0.35
K/W
Rth mb-h
thermal resistance from mounting base to
heatsink
total device; both sections
equally loaded
0.15
K/W
MRA933
MGE616
2
10
500
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
D
(A)
400
(2)
(1)
(2)
(1)
300
10
200
100
0
1
2
1
10
10
0
40
80
120
160
V
(V)
DS
T
(°C)
h
(1) Current in this area may be limited by RDSon
(2) Tmb = 25 °C.
.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
2003 Sep 26
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
Per transistor section
V(BR)DSS drain-source breakdown voltage
IDSS
PARAMETERS
CONDITIONS
MIN.
TYP.
MAX. UNIT
VGS = 0; ID = 100 mA
VGS = 0; VDS = 32 V
VGS = ±20 V; VDS = 0
ID = 100 mA; VDS = 10 V
65
−
−
−
−
−
−
V
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
−
−
2
−
5
mA
µA
V
IGSS
1
VGSth
∆VGS
4.5
100
gate-source voltage difference of ID = 100 mA; VDS = 10 V
both transistor sections
mV
gfs
forward transconductance
ID = 8 A; VDS = 10 V
5
7.5
−
S
gfs1/gfs2
forward transconductance ratio of ID = 8 A; VDS = 10 V
both transistor sections
0.9
−
1.1
RDSon
IDSX
Cis
drain-source on-state resistance ID = 8 A; VDS = 10 V
−
−
−
−
−
−
0.1
37
0.15
−
Ω
on-state drain current
input capacitance
VGS = 10 V; VDS = 10 V
A
VGS = 0; VDS = 32 V; f = 1 MHz
VGS = 0; VDS = 32 V; f = 1 MHz
VGS = 0; VDS = 32 V; f = 1 MHz
495
340
40
−
pF
pF
pF
pF
Cos
output capacitance
−
Crs
feedback capacitance
drain-flange capacitance
−
Cd-f
5.4
−
VGS group indicator
GROUP
LIMITS
(V)
LIMITS
(V)
GROUP
MIN.
MAX.
MIN.
MAX.
A
B
C
D
E
F
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
O
P
Q
R
S
T
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
G
H
J
U
V
W
X
Y
Z
K
L
M
N
2003 Sep 26
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP229
MGP230
0
60
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
I
D
(A)
−1
−2
−3
40
20
−4
−5
−1
0
0
10
1
10
5
10
15
20
I
(A)
V
(V)
D
GS
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
MGP231
MGP234
200
1500
handbook, halfpage
handbook, halfpage
R
DSon
C
(mΩ)
(pF)
150
1000
C
is
100
50
500
C
os
0
0
50
100
150
0
10
20
30
40
T (°C)
V
(V)
DS
j
VGS = 10 V; ID = 8 A.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per
section.
function of junction temperature; typical
values per section.
2003 Sep 26
5
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP232
600
handbook, halfpage
C
rs
(pF)
400
200
0
0
10
20
30
40
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per
section.
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source
class-AB circuit. RGS = 536 Ω per section; optimum load impedance per section = 1.34 + j0.34 Ω; VDS = 32 V.
(1)
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
∆Gp
ηD
(%)
MODE OF OPERATION
(MHz)
(dB)
CW, class-AB
225
32
2 × 250
300
>12
>1
>55
typ. 13.5
typ. 13
typ. 14
typ. 15
typ. 0.4
typ. 0.7
typ. 0.2
typ. 0.5
typ. 62
typ. 68
typ. 60
typ. 70
225
225
175
28
35
28
2 × 250
2 × 250
2 × 250
300
300
300
Note
1. Assuming a third order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
Ruggedness in class-AB operation
The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the
following conditions: VDS = 32 V; f = 225 MHz at rated output power.
2003 Sep 26
6
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP239
MGP241
20
80
handbook, halfpage
handbook, halfpage
η
G
p
D
(%)
(dB)
16
60
12
8
40
20
4
0
0
0
100
200
300
400
P
500
(W)
100
200
300
400
P
500
(W)
L
L
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);
ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);
f = 225 MHz.
f = 225 MHz.
solid line: Th = 25 °C. dotted line: Th = 70 °C.
solid line: Th = 25 °C. dotted line: Th = 70 °C.
Fig.9 Power gain as a function of load power;
typical values per section.
Fig.10 Efficiency as a function of load power;
typical values per section.
MGP240
500
handbook, halfpage
P
L
(W)
400
300
200
100
0
0
10
20
30
P
(W)
IN
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);
f = 225 MHz.
solid line: Th = 25 °C. dotted line: Th = 70 °C.
Fig.11 Load power as a function of input power;
typical values per section.
2003 Sep 26
7
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V
DD1
C16
R1
C12
C17
A
C8
R7
L12
C18
R2
C9
C13
C6
L13
L16
R3
C25
D.U.T.
L10
C29
L18
L20
L22
L8
L1
L4
L6
C1
C2
50 Ω
output
50 Ω
input
L2
C4
C5
C3
L23
C22
L11
C23
C24
C28
C27
C30
L3
L5
L7
L9
R4
L17
L14
L19
L21
L24
C26
C7
C14
C10
C19
R5
C11
R8
L15
C20
A
IC1
C33
C15
R9
V
DD1
R6
C21
C34
C32
C31
MGP211
f = 225 MHz.
V
DD2
Fig.12 Test circuit for class-AB operation.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
List of components class-AB test circuit (see Figs 12 and 13)
COMPONENT
C1, C2
DESCRIPTION
VALUE
DIMENSIONS CATALOGUE NO.
multilayer ceramic chip capacitor;
note 1
2 × 56 pF in
parallel + 18 pF,
500 V
C3
C4
film dielectric trimmer
2 to 9 pF
2222 809 09005
multilayer ceramic chip capacitor;
note 1
47 pF, 500 V
C5
film dielectric trimmer
5 to 60 pF
2222 809 08003
2222 852 47104
C6, C7, C9, C10,
multilayer ceramic chip capacitor;
1 nF, 500 V
C12, C15, C31, C34 note 1
C8, C11, C16, C21, multilayer ceramic chip capacitor;
100 nF, 50 V
C32
note 1
C17, C20, C33
C22
electrolytic capacitor
10 µF, 63 V
multilayer ceramic chip capacitor;
note 1
82 pF, 500 V
C23
multilayer ceramic chip capacitor;
note 1
10 pF + 30 pF in
parallel, 500 V
C24, C28
C25, C26
film dielectric trimmer
2 to 18 pF
2222 809 09006
multilayer ceramic chip capacitor;
note 1
39 pF + 47 pF in
parallel, 500 V
C27
multilayer ceramic chip capacitor;
note 1
18 pF, 500 V
C29, C30
multilayer ceramic chip capacitor;
note 1
3 × 100 pF in
parallel, 500 V
L1, L3, L22, L24
L2, L23
stripline; note 2
50 Ω
50 Ω
4.8 × 80 mm
semi-rigid cable; note 3
ext. conductor
length 80 mm
ext. dia 3.6 mm
L4, L5
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
43 Ω
6 × 32.5 mm
6 × 10.5 mm
6 × 3 mm
L6, L7
43 Ω
L8, L9
43 Ω
L10, L11
L12, L15
43 Ω
6 × 10.5 mm
4312 020 36642
grade 3B Ferroxcube wideband
HF choke
2 in parallel
L13, L14
2 turns enamelled 1.6 mm copper
wire
25 nH
space 2.5 mm
int. dia. 5 mm
leads 2 × 7 mm
L16, L17
L18, L19
L20, L21
R1, R6
stripline; notes 2 and 4
stripline; notes 2 and 4
stripline; notes 2 and 4
10 turns potentiometer
metal film resistor
43 Ω
6 × 3 mm
6 × 35 mm
6 × 9 mm
43 Ω
43 Ω
50 kΩ
R2, R5
0.4 W, 1 kΩ
0.4 W, 536 Ω
R3, R4
metal film resistor
2003 Sep 26
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
COMPONENT
R7, R8
DESCRIPTION
metal film resistor
VALUE
DIMENSIONS CATALOGUE NO.
1 W, ±5%, 10 Ω
1 W, 3.16 kΩ
R9
metal film resistor
IC1
voltage regulator 78L05
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 to L11, L16 to L22 and L24 are on a double copper-clad printed circuit board with glass
microfibre PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm.
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 to L21 to avoid overheating by large
RF currents.
2003 Sep 26
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
130
119
100
to R1, R6
C31
C32
C16
C12
IC1
R9
C13
C18
+V
DD1
L12
R7
C17
C34
C33
L12
L22
L1
L2
slider R1
C9
C6
L13
R2
+V
DD1
C8
hollow rivet
L18
R3
L8
L10
C1
C29
C25
L16
L20
L4
L5
L6
C23
C24
L17
C27
hollow rivets
hollow rivets
C4
L7
C22
C28
L21
C5
C3
L19
C26
L14
C30
C2
L9
L11
R4
R5
C10
C7
C11
+V
DD2
L24
L3
slider R6
L15
L23
R8
C20
C19
L15
copper strap
copper strap
C14
C15
C21
MGP213
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Dimensions in mm.
Fig.13 Component layout for 225 MHz class-AB test circuit.
2003 Sep 26
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP242
MGP243
2
2
handbook, halfpage
handbook, halfpage
Z
i
(Ω)
r
i
Z
L
(Ω)
R
L
1
0
1
X
L
x
i
−1
−2
150
0
150
200
250
200
250
f (MHz)
f (MHz)
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); PL = 300 W.
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); PL = 300 W.
Fig.14 Input impedance as a function of frequency
(series components); typical values per
section.
Fig.15 Load impedance as a function of frequency
(series components); typical values per
section.
MGP244
20
handbook, halfpage
G
p
(dB)
16
12
8
4
0
150
200
250
f (MHz)
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); PL = 300 W.
Fig.16 Power gain as a function of frequency;
typical values per section.
2003 Sep 26
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
BLF368 scattering parameters
VDS = 28 V; ID = 250 mA; note 1
s11
s21
s12
s22
f (MHz)
|s11|
Φ
|s21|
Φ
|s12|
Φ
|s22|
Φ
5
10
0.86
0.86
0.86
0.86
0.87
0.88
0.90
0.91
0.92
0.93
0.93
0.95
0.96
0.97
0.97
0.98
0.99
0.99
0.99
0.99
0.99
0.99
1.00
1.00
1.00
1.00
−159.2
−168.9
−173.4
−174.2
−174.4
−174.5
−174.7
−174.9
−175.2
−175.5
−175.9
−176.7
−177.6
−178.4
−179.1
179.5
21.94
11.14
5.45
3.53
2.54
1.94
1.54
1.25
1.04
0.88
0.75
0.53
0.38
0.30
0.23
0.16
0.11
0.08
0.07
0.05
0.05
0.04
0.03
0.03
0.04
0.04
96.8
88.5
79.2
72.3
66.3
61.0
56.1
51.8
47.9
44.4
41.0
34.0
29.3
25.8
22.6
18.7
17.1
16.6
18.9
21.7
27.2
37.8
50.9
62.1
71.3
76.4
0.01
0.01
0.01
0.02
0.02
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.00
0.00
0.00
0.01
0.01
0.01
0.01
0.01
0.02
0.02
0.03
0.03
0.04
−0.8
21.1
18.7
8.7
0.90
0.85
0.83
0.83
0.84
0.85
0.86
0.88
0.89
0.90
0.91
0.93
0.94
0.96
0.97
0.98
0.99
0.99
0.99
0.99
1.00
1.00
1.00
1.00
1.00
1.00
169.1
174.3
20
178.2
30
−179.8
−178.0
−176.7
−175.9
−175.4
−175.1
−175.0
−175.1
−175.6
−175.7
−176.1
−176.8
−177.7
−178.6
−179.2
−179.9
179.5
40
0.3
50
−6.7
−12.5
−17.4
−21.1
−24.1
−26.6
−29.8
−28.2
−21.2
−6.2
45.7
70.9
76.9
84.9
87.8
88.4
89.3
90.0
91.1
91.6
92.3
60
70
80
90
100
125
150
175
200
250
300
350
400
450
500
600
700
800
900
1000
178.4
177.3
176.4
175.3
174.4
178.9
172.6
177.8
170.8
176.8
169.0
175.8
167.1
174.9
165.1
173.8
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast
2003 Sep 26
13
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
BLF368 scattering parameters
VDS = 32 V; ID = 250 mA; note 1
s11
s21
s12
s22
f (MHz)
|s11|
Φ
|s21|
Φ
|s12|
Φ
|s22|
Φ
5
10
0.86
0.86
0.86
0.86
0.87
0.88
0.90
0.91
0.92
0.93
0.93
0.95
0.96
0.97
0.97
0.98
0.99
0.99
0.99
0.99
0.99
0.99
1.00
1.00
1.00
1.00
−157.9
−168.3
−173.1
−174.0
−174.3
−174.5
−174.6
−174.8
−175.2
−175.5
−175.8
−176.6
−177.5
−178.4
−179.1
179.6
23.11
11.76
5.75
3.73
2.68
2.05
1.63
1.33
1.10
0.93
0.80
0.56
0.41
0.31
0.25
0.16
0.12
0.09
0.07
0.06
0.05
0.04
0.03
0.03
0.04
0.04
97.5
88.9
79.4
72.5
66.5
61.2
56.4
52.1
48.2
44.7
41.4
34.3
29.5
26.0
22.8
18.9
17.0
16.9
18.6
21.2
24.8
36.3
49.2
61.2
70.4
75.8
0.01
0.01
0.01
0.02
0.02
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.00
0.00
0.00
0.01
0.01
0.01
0.01
0.01
0.02
0.02
0.03
0.03
0.04
−2.1
20.9
18.7
8.8
0.90
0.84
0.82
0.83
0.83
0.84
0.86
0.87
0.88
0.89
0.91
0.92
0.94
0.96
0.97
0.98
0.98
0.99
0.99
0.99
1.00
1.00
1.00
1.00
1.00
1.00
168.6
174.0
20
178.1
30
−179.7
−177.9
−176.5
−175.7
−175.2
−174.8
−174.7
−174.8
−175.3
−175.5
−175.9
−176.6
−177.5
−178.4
−179.1
−179.8
179.7
40
0.5
50
-6.5
60
−12.3
−17.1
−20.9
−23.9
−26.3
−29.5
−27.8
−20.8
−5.6
45.9
71.1
77.4
84.9
87.9
88.5
89.4
90.1
91.2
91.8
92.5
70
80
90
100
125
150
175
200
250
300
350
400
450
500
600
700
800
900
1000
178.4
177.3
176.4
175.4
174.4
179.0
172.6
177.9
170.8
176.9
169.0
175.9
167.1
175.0
165.1
173.9
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast
2003 Sep 26
14
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
BLF368 scattering parameters
VDS = 35 V; ID = 250 mA; note 1
s11
s21
s12
s22
f (MHz)
|s11|
Φ
|s21|
Φ
|s12|
Φ
|s22|
Φ
5
10
0.86
0.86
0.86
0.86
0.87
0.89
0.90
0.91
0.92
0.93
0.93
0.95
0.96
0.97
0.97
0.98
0.99
0.99
0.99
0.99
0.99
0.99
1.00
1.00
1.00
1.00
−156.9
−167.8
−172.9
−173.9
−174.2
−174.4
−174.6
−174.8
−175.2
−175.5
−175.8
−176.6
−177.5
−178.3
−179.0
179.6
23.97
12.21
5.98
3.88
2.79
2.13
1.70
1.38
1.15
0.97
0.83
0.58
0.43
0.33
0.26
0.17
0.12
0.09
0.07
0.06
0.05
0.04
0.03
0.04
0.04
0.04
98.1
89.2
79.6
72.7
66.7
61.4
56.5
52.2
48.4
44.9
41.5
34.5
29.6
26.1
22.9
19.0
16.9
16.5
18.1
20.5
25.1
35.9
48.8
59.9
69.8
75.8
0.01
0.01
0.01
0.01
0.02
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.00
0.00
0.00
0.01
0.01
0.01
0.01
0.01
0.02
0.02
0.03
0.03
0.04
−3.2
20.7
18.7
8.9
0.90
0.84
0.82
0.82
0.82
0.84
0.85
0.87
0.88
0.89
0.90
0.92
0.94
0.96
0.96
0.98
0.98
0.99
0.99
0.99
1.00
1.00
1.00
1.00
1.00
1.00
168.3
173.8
20
178.1
30
−179.7
−177.8
−176.4
−175.5
−175.0
−174.7
−174.5
−174.6
−175.1
−175.3
−175.7
−176.4
−177.3
−178.3
−179.0
−179.7
179.7
40
0.6
50
−6.4
−12.2
−16.9
−20.8
−23.7
−26.0
−29.2
−27.6
−20.4
−5.1
46.5
71.2
77.5
84.9
87.9
88.5
89.5
90.1
91.2
91.9
92.6
60
70
80
90
100
125
150
175
200
250
300
350
400
450
500
600
700
800
900
1000
178.4
177.3
176.4
175.4
174.4
179.1
172.6
178.0
170.8
176.9
169.0
176.0
167.1
175.0
165.1
173.9
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast
2003 Sep 26
15
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
SOT262A1
D
A
F
B
D
1
U
1
q
C
C
w
2
H
M
M
c
1
1
2
p
E
E
H
U
2
1
5
w
A
M
M
M
A
B
1
3
4
w
3
b
M
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
2
1
2
5.85
5.58
5.77
5.00
22.17 21.98
21.46 21.71
10.27 10.29 1.78 21.08 17.02 3.28 2.85
10.05 10.03 1.52 19.56 16.51 3.02 2.59
34.17 9.91
33.90 9.65
0.16
0.10
mm
27.94
1.100
0.25 0.51 0.25
0.010 0.020 0.010
11.05
0.435
0.230
0.220
0.227
0.197
0.873 0.865
0.845 0.855
0.404 0.405 0.070 0.830 0.670 0.129 0.112
0.396 0.396 0.060 0.770 0.650 0.119 0.102
1.345 0.390
1.335 0.380
0.006
0.004
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-03-29
SOT262A1
2003 Sep 26
16
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Sep 26
17
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/04/pp18
Date of release: 2003 Sep 26
Document order number: 9397 750 11602
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