933986070215 [NXP]
0.215A, 70V, SILICON, SIGNAL DIODE, PLASTIC, SMD, 3 PIN;
| 型号： | 933986070215 |
| 厂家： | 
NXP |
| 描述： | 0.215A, 70V, SILICON, SIGNAL DIODE, PLASTIC, SMD, 3 PIN 光电二极管 |
| 文件： | 总12页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAL99
High-speed diode
1999 May 26
Product specification
Supersedes data of 1996 Sep 10
Philips Semiconductors
Product specification
High-speed diode
BAL99
FEATURES
DESCRIPTION
PINNING
PIN
• Small plastic SMD package
The BAL99 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in the small SOT23
plastic SMD package.
DESCRIPTION
• High switching speed: max. 4 ns
1
2
3
not connected
cathode
• Continuous reverse voltage:
max. 70 V
anode
• Repetitive peak reverse voltage:
max. 70 V
• Repetitive peak forward current:
max. 500 mA.
handbookpage
2
1
1
n.c.
APPLICATIONS
2
• High-speed switching in e.g.
surface mounted circuits.
3
3
MAM231
Marking code: JFp = made in Hong Kong; JFt = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
70
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
V
70
IF
see Fig.2; note 1
215
500
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
−
−
4
A
1
A
0.5
250
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26
2
Philips Semiconductors
Product specification
High-speed diode
BAL99
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 25 V
VR = 70 V
715
mV
855
1
mV
V
1.25
V
IR
reverse current
30
1
nA
µA
µA
µA
pF
ns
VR = 25 V; Tj = 150 °C
VR = 70 V; Tj = 150 °C;
f = 1 MHz; VR = 0; see Fig.6
30
50
1.5
4
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns;
see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
360
UNIT
Rth j-tp
Rth j-a
K/W
K/W
500
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26
3
Philips Semiconductors
Product specification
High-speed diode
BAL99
GRAPHICAL DATA
MSA562 -1
MBG382
300
250
handbook, halfpage
I
F
I
(mA)
F
(mA)
200
(1)
(2)
(3)
200
150
100
100
50
0
0
0
1
2
0
50
100
150
T
200
( C)
V (V)
F
o
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 26
4
Philips Semiconductors
Product specification
High-speed diode
BAL99
MBH182
MBG446
5
10
0.8
handbook, halfpage
C
I
d
R
(pF)
0.6
(nA)
4
10
(1)
(2)
(3)
3
10
10
0.4
0.2
2
0
0
10
o
0
100
4
8
12
16
200
T ( C)
j
V
(V)
R
(1) VR = 70 V; maximum values.
(2) VR = 70 V; typical values.
(3) VR = 25 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 May 26
5
Philips Semiconductors
Product specification
High-speed diode
BAL99
t
t
p
r
t
D.U.T.
10%
I
F
I
t
R
= 50 Ω
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
6
1999 May 26
Philips Semiconductors
Product specification
High-speed diode
BAL99
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 May 26
7
Philips Semiconductors
Product specification
High-speed diode
BAL99
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 26
8
Philips Semiconductors
Product specification
High-speed diode
BAL99
NOTES
1999 May 26
9
Philips Semiconductors
Product specification
High-speed diode
BAL99
NOTES
1999 May 26
10
Philips Semiconductors
Product specification
High-speed diode
BAL99
NOTES
1999 May 26
11
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© Philips Electronics N.V. 1999
SCA65
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
115002/03/pp12
Date of release: 1999 May 26
Document order number: 9397 750 05888
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