934049480118 [NXP]

600V, 8A, SNUBBERLESS TRIAC;
934049480118
型号: 934049480118
厂家: NXP    NXP
描述:

600V, 8A, SNUBBERLESS TRIAC

三端双向交流开关
文件: 总8页 (文件大小:69K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA208S series B  
BTA208M series B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high commutation  
triacs in a plastic envelope, suitable  
forsurfacemounting, intended foruse  
in circuits where high static and  
dynamic dV/dt and high dI/dt can  
occur. These devices will commutate  
the full rated rms current at the  
maximum rated junction temperature,  
without the aid of a snubber.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BTA208S (or BTA208M)- 500B 600B 800B  
VDRM  
Repetitive peak off-state  
500  
600  
800  
V
voltages  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
8
65  
8
65  
8
65  
A
A
PINNING - SOT428  
PIN CONFIGURATION  
SYMBOL  
PIN  
NUMBER  
Standard Alternative  
tab  
S
M
1
2
MT1  
MT2  
gate  
MT2  
gate  
MT2  
MT1  
MT2  
T2  
T1  
3
2
G
1
3
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
8
A
Tmb 102 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
65  
71  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
21  
A2s  
A/µs  
dIT/dt  
ITM = 12 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
September 1997  
1
Rev 1.200  
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA208S series B  
BTA208M series B  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance  
full cycle  
-
-
-
-
-
75  
2.0  
2.4  
-
K/W  
K/W  
K/W  
junction to mounting base half cycle  
Rth j-a  
Thermal resistance  
junction to ambient  
pcb (FR4) mounted; footprint as in Fig.14  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
IGT  
Gate trigger current2  
VD = 12 V; IT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
2
2
2
18  
21  
34  
50  
50  
50  
mA  
mA  
mA  
IL  
Latching current  
VD = 12 V; IGT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
-
31  
34  
60  
90  
mA  
mA  
mA  
mA  
V
-
-
30  
60  
IH  
VT  
VGT  
Holding current  
On-state voltage  
Gate trigger voltage  
VD = 12 V; IGT = 0.1 A  
IT = 10 A  
-
31  
60  
-
1.3  
0.7  
0.4  
0.1  
1.65  
1.5  
-
VD = 12 V; IT = 0.1 A  
-
0.25  
-
V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C  
V
ID  
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C  
0.5  
mA  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
dVD/dt  
dIcom/dt  
tgt  
Critical rate of rise of  
off-state voltage  
Critical rate of change of  
commutating current  
Gate controlled turn-on  
time  
VDM = 67% VDRM(max); Tj = 125 ˚C;  
exponential waveform; gate open circuit  
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A;  
without snubber; gate open circuit  
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;  
dIG/dt = 5 A/µs  
1000 4000  
-
-
-
V/µs  
A/ms  
µs  
-
-
14  
2
2 Device does not trigger in the T2-, G+ quadrant.  
September 1997  
2
Rev 1.200  
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA208S series B  
BTA208M series B  
IT(RMS) / A  
Tmb(max) / C  
= 180  
Ptot / W  
10  
8
12  
101  
105  
109  
113  
120  
90  
102 C  
10  
1
8
6
4
2
0
60  
30  
6
4
117  
2
121  
125  
0
-50  
0
50  
Tmb / C  
100  
150  
0
2
4
6
8
10  
IT(RMS) / A  
Fig.1. Maximum on-state dissipation, Ptot, versus rms  
on-state current, IT(RMS), where α = conduction angle.  
Fig.4. Maximum permissible rms current IT(RMS)  
versus mounting base temperature Tmb.  
,
ITSM / A  
IT(RMS) / A  
1000  
100  
10  
25  
20  
15  
10  
5
dIT/dt limit  
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
10ms 100ms  
0
10us  
100us  
1ms  
T / s  
0.01  
0.1  
surge duration / s  
1
10  
Fig.2. Maximum permissible non-repetitive peak  
on-state current ITSM, versus pulse width tp, for  
sinusoidal currents, tp 20ms.  
Fig.5. Maximum permissible repetitive rms on-state  
current IT(RMS), versus surge duration, for sinusoidal  
currents, f = 50 Hz; Tmb 102˚C.  
ITSM / A  
VGT(Tj)  
VGT(25 C)  
70  
1.6  
1.4  
1.2  
1
I
TSM  
time  
I
T
60  
50  
40  
30  
20  
10  
0
T
Tj initial = 25 C max  
0.8  
0.6  
0.4  
1
10  
100  
1000  
-50  
0
50  
Tj / C  
100  
150  
Number of half cycles at 50Hz  
Fig.3. Maximum permissible non-repetitive peak  
on-state current ITSM, versus number of cycles, for  
sinusoidal currents, f = 50 Hz.  
Fig.6. Normalised gate trigger voltage  
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
September 1997  
3
Rev 1.200  
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA208S series B  
BTA208M series B  
IGT(Tj)  
IGT(25 C)  
IT / A  
25  
20  
15  
10  
5
Tj = 125 C  
Tj = 25 C  
3
2.5  
2
T2+ G+  
T2+ G-  
T2- G-  
max  
typ  
Vo = 1.264 V  
Rs = 0.0378 Ohms  
1.5  
1
0.5  
0
0
0
0.5  
1
1.5  
VT / V  
2
2.5  
3
-50  
0
50  
Tj / C  
100  
150  
Fig.7. Normalised gate trigger current  
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.  
Fig.10. Typical and maximum on-state characteristic.  
IL(Tj)  
IL(25 C)  
Zth j-mb (K/W)  
10  
1
3
2.5  
2
unidirectional  
bidirectional  
1.5  
1
t
P
D
0.1  
0.01  
p
t
0.5  
0
10us  
0.1ms  
1ms  
10ms  
tp / s  
0.1s  
1s  
10s  
-50  
0
50  
Tj / C  
100  
150  
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),  
versus junction temperature Tj.  
Fig.11. Transient thermal impedance Zth j-mb, versus  
pulse width tp.  
IH(Tj)  
IH(25C)  
dIcom/dt (A/ms)  
1000  
100  
10  
3
2.5  
2
1.5  
1
0.5  
0
1
20  
40  
60  
80  
100  
120  
140  
-50  
0
50  
100  
150  
Tj / C  
Tj / C  
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),  
versus junction temperature Tj.  
Fig.12. Typical, critical rate of change of commutating  
current, dIcom/dt versus junction temperature.  
September 1997  
4
Rev 1.200  
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA208S series B  
BTA208M series B  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 1.1 g  
seating plane  
2.38 max  
0.93 max  
1.1  
5.4  
6.73 max  
tab  
4 min  
4.6  
6.22 max  
0.5 min  
10.4 max  
0.5  
2
0.3  
0.5  
3
1
0.8 max  
(x2)  
2.285 (x2)  
Fig.13. SOT428 : centre pin connected to tab.  
MOUNTING INSTRUCTIONS  
Dimensions in mm  
7.0  
7.0  
2.15  
2.5  
1.5  
4.57  
Fig.14. SOT428 : minimum pad sizes for surface mounting.  
Notes  
1. Plastic meets UL94 V0 at 1/8".  
September 1997  
5
Rev 1.200  
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA208S series B  
BTA208M series B  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1997  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
September 1997  
6
Rev 1.200  
1 of 2  
Go to Philips Semiconductors' home page  
Select & Go...  
Catalog  
& Datasheets  
Info  
Catalog by Function  
Discrete semiconductors  
Audio  
BTA208S series B; BTA208M series B; Three quadrant triacs high commutatio  
Clocks and Watches  
Data communications  
Microcontrollers  
Peripherals  
Description  
Datasheet  
Products, packages, availability and ordering  
To be kept informed on BTA208S se  
Find similar products  
Standard analog  
Video  
Wired communications  
Wireless communications  
Description  
Catalog by System  
Automotive  
Glass passivated high commutation triacs in a plastic envelope, suitable for surface  
for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thes  
commutate the full rated rms current at the maximum rated junction temperature, wit  
snubber.  
Consumer Multimedia  
Systems  
Communications  
PC/PC-peripherals  
Cross reference  
Models  
Datasheet  
Packages  
Application notes  
Selection guides  
Other technical documentation  
End of Life information  
Datahandbook system  
File  
Page size  
release date Datasheet status count (kB)  
Publication  
Type nr. Title  
BTA208S Three quadrant triacs high 01-Sep-97 Product 49  
6
series B; commutation  
BTA208M  
Specification  
series B  
Relevant Links  
About catalog tree  
About search  
Products, packages, availability and ordering  
About this site  
Subscribe to eNews  
Catalog & Datasheets  
Search  
BTA208S series B;  
BTA208M series B  
North  
Order code  
(12nc)  
Partnumber American  
Partnumber  
marking/packing package device status  
Standard  
BTA208S series B;  
BTA208M series B  
BTA208S- BTA208S-  
9340 494 80118 Marking * Reel SOT428 Full productio  
Pack, SMD, 13"  
600B  
600B /T3  
Standard  
BTA208S- BTA208S-  
800B 800B /T3  
9340 494 90118 Marking * Reel SOT428 Full productio  
Pack, SMD, 13"  
Please read information about some discontinued variants of this product.  
Find similar products:  
BTA208S series B; BTA208M series B links to the similar products page conta  
products that are similar in function or related to the part number(s) as listed on this  
2 of 2  
products page includes products from the same catalog tree(s) , relevant selection g  
from the same functional category.  
Copyright © 2000  
Royal Philips Electronics  
All rights reserved.  
Terms and conditions.  

相关型号:

934049490118

800V, 8A, SNUBBERLESS TRIAC
NXP

934049750127

TRANSISTOR 12 A, NPN, Si, POWER TRANSISTOR, PLASTIC, TOP-3D, FULL PACK-3, BIP General Purpose Power
NXP

934049780118

600V, 8A, 4 QUADRANT LOGIC LEVEL TRIAC, PLASTIC, SC-63, DPAK-3
NXP

934049790118

800V, 8A, 4 QUADRANT LOGIC LEVEL TRIAC, PLASTIC, SC-63, DPAK-3
NXP

934049930115

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT6, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP

934049940115

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT6, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP

934049950125

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT6, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP

934049950165

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT6, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP

93405-0004

REVERSE FOOTPRINT PICOFLEX SMT HEADER
MOLEX

93405-0006

REVERSE FOOTPRINT PICOFLEX SMT HEADER
MOLEX

93405-0008

REVERSE FOOTPRINT PICOFLEX SMT HEADER
MOLEX

93405-0010

REVERSE FOOTPRINT PICOFLEX SMT HEADER
MOLEX