934054699215 [NXP]
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal;
| 型号： | 934054699215 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PDTA143ZT
PNP resistor-equipped transistor
Product specification
1997 Dec 12
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143ZT
FEATURES
• Built-in bias resistors R1 and R2
(typ. 4.7 kΩ and 47 kΩ
respectively)
3
handbook, 4 columns
3
• Simplification of circuit design
R1
1
• Reduces number of components
and board space.
R2
2
APPLICATIONS
1
2
Top view
MAM100
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
Fig.1 Simplified outline (SOT23) and symbol.
DESCRIPTION
MARKING
TYPE
PNP resistor-equipped transistor in a
SOT23 plastic package.
NPN complement: PDTC143ZT.
MARKING
CODE
NUMBER
1
3
PDTA143ZT
p19
2
PINNING
MGA893 - 1
PIN
DESCRIPTION
base/input
1
2
3
Fig.2 Equivalent inverter
symbol.
emitter/ground (+)
collector/output
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
IO
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
open base
−
−
−
−
−
−
−
−
−
−50
−100
−100
250
−
V
mA
mA
mW
ICM
Ptot
hFE
R1
Tamb ≤ 25 °C
IC = −10 mA; VCE = −5 V
80
input resistor
3.3
4.7
6.1
kΩ
R2
-------
R1
resistor ratio
8
10
12
1997 Dec 12
2
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143ZT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
−50
UNIT
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
−
−
−
V
V
V
open base
−50
−10
open collector
positive
−
−
−
−
−
+5
V
V
negative
−30
IO
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
−100
−100
250
mA
mA
mW
°C
ICM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
+150
150
°C
Tamb
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
collector cut-off current
CONDITIONS
IE = 0; VCB = −50 V
MIN.
TYP. MAX. UNIT
ICBO
ICEO
−
−
−100
−1
nA
µA
µA
mA
IB = 0; VCE = −30 V
−
−
IB = 0; VCE = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
−
−
−50
−1.8
−
IEBO
hFE
emitter cut-off current
DC current gain
−
−
IC = −10 mA; VCE = −5 V
80
−
−
VCEsat
Vi(off)
Vi(on)
R1
collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA
−
−300
−500
−
mV
mV
V
input-off voltage
input-on voltage
input resistor
IC = −100 µA; VCE = −5 V
IC = −5 mA; VCE = −300 mV
−
−
−1.3
3.3
−
4.7
6.1
kΩ
R2
-------
R1
resistor ratio
8
10
12
5
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
pF
1997 Dec 12
3
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143ZT
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1997 Dec 12
4
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143ZT
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Dec 12
5
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143ZT
NOTES
1997 Dec 12
6
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143ZT
NOTES
1997 Dec 12
7
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© Philips Electronics N.V. 1997
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
117047/1200/01/pp8
Date of release: 1997 Dec 12
Document order number: 9397 750 03075
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PDTA143ZT; PNP
resistor-equipped
transistor
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General description
PNP resistor-equipped transistor in a SOT23 plastic package.
NPN complement: PDTC143ZT.
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Features
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•
•
●
●
●
Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 47 kΩ respectively)
Simplification of circuit design
Reduces number of components and board space.
End of Life
information
Distributors Go
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•
•
Models
•
•
Applications
SoC solutions
●
●
Especially suitable for space reduction in interface and driver circuits
Inverter circuit configurations without use of external resistors.
AN10116_2: Breakthrough In Small Signal - Low V
(BISS) Transistors and their Applications (date 05-Aug-02)
CEsat
Datasheet
Type number Title
Publication release date Datasheet status
Page count File size (kB) Datasheet
PDTA143ZT PNP resistor-equipped transistor
12/12/1997
Product specification
8
49
Download
Parametrics
Type number Package hFE hFE POLARITY I
VCEO Ptot
INPUT RES RES
NPN
Complement Input
Resistor(kOhm)
O
min max
max(V) max(mW) (KO)(kOhms) RATIO COMPL
max(mA)
SOT23
(SST3)
PDTA143ZT
100 >100 PNP
100
100
50
50
250
250
10
10
PDTC143ZT 4.7
SOT23
(SST3)
PDTA143ZT/FD
100
4.7
PDTC143ZT
Products, packages, availability and ordering
Type number
North American type Ordering code (12NC) Marking/Packing
Package
Device status Buy online
Discretes packing info
number
Standard Marking * Reel Pack,
SMD, Low Profile
SOT23 (SST3)
SOT23 (SST3)
PDTA143ZT
PDTA143ZT T/R
9340 546 99215
9340 557 53215
Full production
-
Standard Marking * Reel Pack,
SMD, Low Profile
PDTA143ZT/FD
Full production
-
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