935292778115 [NXP]
AUP/ULP/V SERIES, DUAL 2-INPUT NAND GATE, PDSO8, 1.35 X 1 MM, 0.35 MM HEIGHT, 0.35 MM PITCH, SOT-1203, SON-8;型号: | 935292778115 |
厂家: | NXP |
描述: | AUP/ULP/V SERIES, DUAL 2-INPUT NAND GATE, PDSO8, 1.35 X 1 MM, 0.35 MM HEIGHT, 0.35 MM PITCH, SOT-1203, SON-8 输入元件 光电二极管 逻辑集成电路 |
文件: | 总21页 (文件大小:275K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
74AUP2G00
Low-power dual 2-input NAND gate
Rev. 8 — 5 February 2013
Product data sheet
1. General description
The 74AUP2G00 provides dual 2-input NAND function.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
2. Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; ICC = 0.9 A (maximum)
Latch-up performance exceeds 100 mA per JESD78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial power-down mode operation
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
74AUP2G00
NXP Semiconductors
Low-power dual 2-input NAND gate
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
74AUP2G00DC
74AUP2G00GT
74AUP2G00GF
74AUP2G00GD
74AUP2G00GM
74AUP2G00GN
74AUP2G00GS
40 C to +125 C
40 C to +125 C
40 C to +125 C
40 C to +125 C
40 C to +125 C
40 C to +125 C
40 C to +125 C
VSSOP8 plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
XSON8
XSON8
XSON8
XQFN8
XSON8
XSON8
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1 1.95 0.5 mm
extremely thin small outline package; no leads;
SOT1089
8 terminals; body 1.35 1 0.5 mm
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; body 3 2 0.5 mm
plastic, extremely thin quad flat package; no leads;
8 terminals; body 1.6 1.6 0.5 mm
SOT902-2
SOT1116
SOT1203
extremely thin small outline package; no leads;
8 terminals; body 1.2 1.0 0.35 mm
extremely thin small outline package; no leads;
8 terminals; body 1.35 1.0 0.35 mm
4. Marking
Table 2.
Marking codes
Type number
74AUP2G00DC
74AUP2G00GT
74AUP2G00GF
74AUP2G00GD
74AUP2G00GM
74AUP2G00GN
74AUP2G00GS
Marking code[1]
p00
p00
pA
p00
p00
pA
pA
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
&
1A
1Y
1B
B
A
2A
2B
&
2Y
Y
001aah748
mna099
001aah749
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram (one gate)
74AUP2G00
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 5 February 2013
2 of 21
74AUP2G00
NXP Semiconductors
Low-power dual 2-input NAND gate
6. Pinning information
6.1 Pinning
74AUP2G00
1A
1B
1
2
3
4
8
7
6
5
V
CC
1Y
2B
2A
74AUP2G00
2Y
1
2
3
4
8
7
6
5
1A
1B
V
CC
1Y
2B
2A
GND
2Y
GND
001aae363
Transparent top view
001aae362
Fig 4. Pin configuration SOT765-1
Fig 5. Pin configuration SOT833-1, SOT1089,
SOT1116 and SOT1203
74AUP2G00
terminal 1
index area
1Y
1
7
6
5
1A
1B
2Y
74AUP2G00
1A
1B
1
2
3
4
8
7
6
5
V
CC
2B
2A
2
3
1Y
2B
2A
2Y
GND
001aae364
001aai218
Transparent top view
Transparent top view
Fig 6. Pin configuration SOT996-2
Fig 7. Pin configuration SOT902-2
6.2 Pin description
Table 3.
Symbol
Pin description
Pin
Description
SOT765-1, SOT833-1, SOT1089,
SOT996-2, SOT1116 and SOT1203
SOT902-2
1A, 2A
1B, 2B
GND
1, 5
2, 6
4
7, 3
6, 2
4
data input
data input
ground (0 V)
data output
supply voltage
1Y, 2Y
VCC
7, 3
8
1, 5
8
74AUP2G00
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 5 February 2013
3 of 21
74AUP2G00
NXP Semiconductors
Low-power dual 2-input NAND gate
7. Functional description
Table 4.
Function table[1]
Input
nA
L
Output
nB
L
nY
H
L
H
L
H
H
H
H
H
L
[1] H = HIGH voltage level; L = LOW voltage level.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
VCC
IIK
Parameter
Conditions
Min
0.5
50
0.5
50
0.5
-
Max
+4.6
-
Unit
V
supply voltage
input clamping current
input voltage
VI < 0 V
mA
V
[1]
[1]
VI
+4.6
-
IOK
output clamping current
output voltage
VO < 0 V
mA
V
VO
Active mode and Power-down mode
VO = 0 V to VCC
+4.6
20
50
IO
output current
mA
mA
mA
C
ICC
supply current
-
IGND
Tstg
Ptot
ground current
50
65
-
-
storage temperature
total power dissipation
+150
250
[2]
Tamb = 40 C to +125 C
mW
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For VSSOP8 packages: above 110 C the value of Ptot derates linearly at 8.0 mW/K.
For XSON8 and XQFN8 packages: above 118 C the value of Ptot derates linearly at 7.8 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
VCC
Operating conditions
Parameter
Conditions
Min
0.8
0
Max
3.6
Unit
supply voltage
input voltage
V
VI
3.6
V
VO
output voltage
Active mode
0
VCC
3.6
V
Power-down mode; VCC = 0 V
0
V
Tamb
ambient temperature
40
-
+125
200
C
ns/V
t/V
input transition rise and fall rate
VCC = 0.8 V to 3.6 V
74AUP2G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 5 February 2013
4 of 21
74AUP2G00
NXP Semiconductors
Low-power dual 2-input NAND gate
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 C
VIH
HIGH-level input voltage
VCC = 0.8 V
0.70 VCC
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 0.8 V
0.65 VCC
-
1.6
-
2.0
-
VIL
LOW-level input voltage
-
-
-
-
0.30 VCC
0.35 VCC
0.7
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
0.9
VOH
HIGH-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V
VCC 0.1
0.75 VCC
1.11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = VIH or VIL
1.32
2.05
1.9
2.72
2.6
VOL
LOW-level output voltage
IO = 20 A; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
V
0.3 VCC
0.31
0.31
0.31
0.44
0.31
0.44
0.1
0.2
0.2
V
V
V
V
V
V
V
II
input leakage current
A
A
A
IOFF
IOFF
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
ICC
supply current
VI = GND or VCC; IO = 0 A;
-
-
-
-
0.5
40
A
A
VCC = 0.8 V to 3.6 V
[1]
ICC
additional supply current
VI = VCC 0.6 V; IO = 0 A;
VCC = 3.3 V
CI
input capacitance
output capacitance
VCC = 0 V to 3.6 V; VI = GND or VCC
VO = GND; VCC = 0 V
-
-
0.8
1.7
-
-
pF
pF
CO
74AUP2G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 5 February 2013
5 of 21
74AUP2G00
NXP Semiconductors
Low-power dual 2-input NAND gate
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 40 C to +85 C
VIH
HIGH-level input voltage
VCC = 0.8 V
0.70 VCC
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 0.8 V
0.65 VCC
-
1.6
-
2.0
-
VIL
LOW-level input voltage
-
-
-
-
0.30 VCC
0.35 VCC
0.7
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
0.9
VOH
HIGH-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V
VCC 0.1
0.7 VCC
1.03
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = VIH or VIL
1.30
1.97
1.85
2.67
2.55
VOL
LOW-level output voltage
IO = 20 A; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
V
0.3 VCC
0.37
0.35
0.33
0.45
0.33
0.45
0.5
0.5
0.6
V
V
V
V
V
V
V
II
input leakage current
A
A
A
IOFF
IOFF
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
CC = 0 V to 0.2 V
V
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
-
-
0.9
50
A
A
[1]
ICC
additional supply current
VI = VCC 0.6 V; IO = 0 A;
VCC = 3.3 V
74AUP2G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 5 February 2013
6 of 21
74AUP2G00
NXP Semiconductors
Low-power dual 2-input NAND gate
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 40 C to +125 C
VIH
HIGH-level input voltage
VCC = 0.8 V
0.75 VCC
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 0.8 V
0.70 VCC
-
1.6
-
2.0
-
VIL
LOW-level input voltage
-
-
-
-
0.25 VCC
0.30 VCC
0.7
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
0.9
VOH
HIGH-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V
VCC 0.11 -
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = VIH or VIL
0.6 VCC
0.93
-
-
-
-
-
-
-
1.17
1.77
1.67
2.40
2.30
VOL
LOW-level output voltage
IO = 20 A; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.11
V
0.33 VCC
0.41
V
V
0.39
V
0.36
V
0.50
V
0.36
V
0.50
V
II
input leakage current
0.75
0.75
0.75
A
A
A
IOFF
IOFF
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
CC = 0 V to 0.2 V
V
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
-
-
1.4
75
A
A
[1]
ICC
additional supply current
VI = VCC 0.6 V; IO = 0 A;
VCC = 3.3 V
[1] One input at VCC 0.6 V, other input at VCC or GND.
74AUP2G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 5 February 2013
7 of 21
74AUP2G00
NXP Semiconductors
Low-power dual 2-input NAND gate
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.
Symbol Parameter
Conditions
Tamb = 25 C
Min Typ[1] Max
Tamb = 40 C to +125 C Unit
Min
Max
Max
(85 C) (125 C)
CL = 5 pF
[2]
[2]
[2]
[2]
tpd
propagation delay nA, nB to nY; see Figure 8
VCC = 0.8 V
-
17.5
5.3
3.8
3.1
2.5
2.2
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
2.5
2.0
1.6
1.3
1.0
11.0
6.8
5.3
4.0
3.6
2.1
1.8
1.4
1.1
1.0
12.2
7.8
6.2
4.7
4.2
13.5
8.6
6.9
5.2
4.7
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
CL = 10 pF
tpd
propagation delay nA, nB to nY; see Figure 8
VCC = 0.8 V
-
21.0
6.1
4.4
3.7
3.0
2.8
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
2.4
2.4
2.0
1.4
1.3
13.0
7.9
6.2
4.7
4.3
2.2
2.2
1.9
1.3
1.2
14.4
9.2
7.3
5.6
4.9
15.9
10.2
8.1
6.2
5.4
CL = 15 pF
tpd
propagation delay nA, nB to nY; see Figure 8
VCC = 0.8 V
-
24.5
6.9
5.0
4.1
3.5
3.2
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
3.4
2.8
2.0
1.7
1.6
14.8
8.9
7.0
5.3
4.9
3.1
2.5
2.0
1.5
1.4
16.5
10.5
8.3
18.2
11.6
9.2
7.1
6.3
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
6.4
VCC = 3.0 V to 3.6 V
5.7
CL = 30 pF
tpd
propagation delay nA, nB to nY; see Figure 8
VCC = 0.8 V
-
34.8
9.2
6.5
5.4
4.6
4.3
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
4.6
3.0
2.6
2.4
2.3
20.1
11.8
9.3
7.1
6.5
4.1
2.9
2.3
2.1
2.1
22.6
14.0
11.1
8.5
24.9
15.4
12.3
9.4
7.6
8.4
74AUP2G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 8 — 5 February 2013
8 of 21
74AUP2G00
NXP Semiconductors
Low-power dual 2-input NAND gate
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.
Symbol Parameter
Conditions
Tamb = 25 C
Min Typ[1] Max
Tamb = 40 C to +125 C Unit
Min
Max
Max
(85 C) (125 C)
CL = 5 pF, 10 pF, 15 pF and 30 pF
CPD power dissipation fi = 1 MHz;
capacitance VI = GND to VCC
[3]
VCC = 0.8 V
-
-
-
-
-
-
2.8
2.9
3.0
3.0
3.4
3.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
pF
pF
pF
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
[1] All typical values are measured at nominal VCC
.
[2] pd is the same as tPLH and tPHL
t
.
[3] CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of the outputs.
12. Waveforms
V
I
V
nA, nB input
GND
M
t
t
PLH
PHL
V
OH
nY output
V
M
001aae972
V
OL
Measurement points are given in Table 9.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 8. The data input (nA or nB) to output (nY) propagation delays
Table 9.
Measurement points
Supply voltage
VCC
Output
VM
Input
VM
VI
tr = tf
0.8 V to 3.6 V
0.5 VCC
0.5 VCC
VCC
3.0 ns
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Low-power dual 2-input NAND gate
V
V
EXT
CC
5 kΩ
V
V
O
I
G
DUT
R
T
C
L
R
L
001aac521
Test data is given in Table 10.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig 9. Test circuit for measuring switching times
Table 10. Test data
Supply voltage
VCC
Load
VEXT
[1]
CL
RL
5 k or 1 M
tPLH, tPHL
open
tPZH, tPHZ
tPZL, tPLZ
0.8 V to 3.6 V
5 pF, 10 pF, 15 pF and 30 pF
GND
2 VCC
[1] For measuring enable and disable times RL = 5 k.
For measuring propagation delays, setup and hold times and pulse width RL = 1 M.
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13. Package outline
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
SOT765-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
A
1
(A )
3
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
A
A
A
b
c
D
E
e
H
L
L
p
Q
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.15
0.00
0.85
0.60
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
3.2
3.0
0.40
0.15
0.21
0.19
0.4
0.1
8°
0°
mm
1
0.5
0.12
0.4
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-06-07
SOT765-1
MO-187
Fig 10. Package outline SOT765-1 (VSSOP8)
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Low-power dual 2-input NAND gate
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm
SOT833-1
b
1
2
3
4
4×
(2)
L
L
1
e
8
7
6
5
e
1
e
1
e
1
8×
A
(2)
A
1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
1
UNIT
b
D
E
e
e
1
L
L
1
max max
0.25
0.17
2.0
1.9
1.05
0.95
0.35 0.40
0.27 0.32
mm
0.5 0.04
0.6
0.5
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
- - -
07-11-14
07-12-07
SOT833-1
- - -
MO-252
Fig 11. Package outline SOT833-1 (XSON8)
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Low-power dual 2-input NAND gate
XSON8: extremely thin small outline package; no leads;
8 terminals; body 1.35 x 1 x 0.5 mm
SOT1089
E
terminal 1
index area
D
A
A
1
detail X
(2)
(4×)
e
L
(2)
(8×)
b
4
5
e
1
1
8
terminal 1
index area
L
1
X
0
0.5
1 mm
scale
Dimensions
Unit
(1)
A
A
b
D
E
e
e
1
L
L
1
1
max 0.5 0.04 0.20 1.40 1.05
0.35 0.40
0.15 1.35 1.00 0.55 0.35 0.30 0.35
0.12 1.30 0.95 0.27 0.32
mm nom
min
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology.
sot1089_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
10-04-09
10-04-12
SOT1089
MO-252
Fig 12. Package outline SOT1089 (XSON8)
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Low-power dual 2-input NAND gate
XSON8: plastic extremely thin small outline package; no leads;
8 terminals; body 3 x 2 x 0.5 mm
SOT996-2
D
B
A
E
A
A
1
detail X
terminal 1
index area
e
1
C
v
C
C
A
B
b
e
L
1
y
1
y
w
C
1
4
L
2
L
8
5
X
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
(1)
Unit
A
A
1
b
D
E
e
e
1
L
L
1
L
2
v
w
y
y
1
max
mm nom 0.5
min
0.05 0.35 2.1 3.1
0.00 0.15 1.9 2.9
0.5 0.15 0.6
0.3 0.05 0.4
0.5 1.5
0.1 0.05 0.05 0.1
sot996-2_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
07-12-21
12-11-20
SOT996-2
Fig 13. Package outline SOT996-2 (XSON8)
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Low-power dual 2-input NAND gate
XQFN8: plastic, extremely thin quad flat package; no leads;
8 terminals; body 1.6 x 1.6 x 0.5 mm
SOT902-2
X
D
B
A
E
terminal 1
index area
A
A
1
detail X
e
C
v
C
C
A
B
b
y
y
w
C
1
4
3
2
5
e
1
6
7
1
terminal 1
index area
8
L
metal area
not for soldering
L
1
0
1
2 mm
scale
Dimensions
(1)
Unit
A
A
1
b
D
E
e
e
1
L
L
v
w
y
y
1
1
max 0.5 0.05 0.25 1.65 1.65
0.35 0.15
0.20 1.60 1.60 0.55 0.5 0.30 0.10 0.1 0.05 0.05 0.05
0.00 0.15 1.55 1.55 0.25 0.05
mm nom
min
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
sot902-2_po
References
Outline
version
European
projection
Issue date
IEC
- - -
JEDEC
JEITA
- - -
10-11-02
11-03-31
SOT902-2
MO-255
Fig 14. Package outline SOT902-2 (XQFN8)
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Low-power dual 2-input NAND gate
XSON8: extremely thin small outline package; no leads;
8 terminals; body 1.2 x 1.0 x 0.35 mm
SOT1116
b
4
(2)
1
2
3
(4×)
L
L
1
e
8
7
6
5
e
1
e
1
e
1
(2)
(8×)
A
1
A
D
E
terminal 1
index area
0
0.5
scale
1 mm
Dimensions
Unit
(1)
A
A
b
D
E
e
e
1
L
L
1
1
max 0.35 0.04 0.20 1.25 1.05
0.35 0.40
0.15 1.20 1.00 0.55 0.3 0.30 0.35
0.12 1.15 0.95 0.27 0.32
mm nom
min
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology.
sot1116_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
10-04-02
10-04-07
SOT1116
Fig 15. Package outline SOT1116 (XSON8)
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Low-power dual 2-input NAND gate
XSON8: extremely thin small outline package; no leads;
8 terminals; body 1.35 x 1.0 x 0.35 mm
SOT1203
b
4
(2)
(4×)
1
2
3
L
L
1
e
8
7
6
5
e
1
e
1
e
1
(2)
(8×)
A
1
A
D
E
terminal 1
index area
0
L
0.5
scale
1 mm
Dimensions
Unit
(1)
A
A
b
D
E
e
e
1
L
1
1
max 0.35 0.04 0.20 1.40 1.05
0.35 0.40
0.15 1.35 1.00 0.55 0.35 0.30 0.35
0.12 1.30 0.95 0.27 0.32
mm nom
min
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology.
sot1203_po
References
Outline
version
European
Issue date
projection
IEC
JEDEC
JEITA
10-04-02
10-04-06
SOT1203
Fig 16. Package outline SOT1203 (XSON8)
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Low-power dual 2-input NAND gate
14. Abbreviations
Table 11. Abbreviations
Acronym
CDM
DUT
Description
Charged Device Model
Device Under Test
ElectroStatic Discharge
Human Body Model
Machine Model
ESD
HBM
MM
15. Revision history
Table 12. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74AUP2G00 v.8
Modifications:
20130205
Product data sheet
-
74AUP2G00 v.7
• For type number 74AUP2G00GD XSON8U has changed to XSON8.
74AUP2G00 v.7
74AUP2G00 v.6
74AUP2G00 v.5
74AUP2G00 v.4
74AUP2G00 v.3
74AUP2G00 v.2
74AUP2G00 v.1
20120608
20111201
20101021
20080605
20080403
20070515
20060825
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
-
-
-
-
-
-
-
74AUP2G00 v.6
74AUP2G00 v.5
74AUP2G00 v.4
74AUP2G00 v.3
74AUP2G00 v.2
74AUP2G00 v.1
-
74AUP2G00
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16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
16.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
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Low-power dual 2-input NAND gate
18. Contents
1
2
3
4
5
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Functional description . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
8
9
10
11
12
13
14
15
16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
16.1
16.2
16.3
16.4
17
18
Contact information. . . . . . . . . . . . . . . . . . . . . 20
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 February 2013
Document identifier: 74AUP2G00
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NXP
935292854132
AUP/ULP/V SERIES, 1-INPUT NON-INVERT GATE, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, SON-6
NXP
935292858132
AUP/ULP/V SERIES, 3-INPUT OR-AND GATE, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, SON-6
NXP
935292877132
AUP/ULP/V SERIES, 1-BIT TRANSCEIVER, TRUE OUTPUT, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, SON-6
NXP
935292878132
AUP/ULP/V SERIES, 3-INPUT MAJORITY LOGIC GATE, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, SON-6
NXP
935292884132
AUP/ULP/V SERIES, 1-BIT DRIVER, TRUE OUTPUT, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, SON-6
NXP
935292885132
AUP/ULP/V SERIES, DUAL 1-INPUT INVERT GATE, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, SON-6
NXP
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