935292796115 [NXP]

LVC/LCX/Z SERIES, 4-INPUT MAJORITY LOGIC GATE, PDSO8, 1.35 X 1 MM, 0.35 MM HEIGHT, SOT-1203, SON-8;
935292796115
型号: 935292796115
厂家: NXP    NXP
描述:

LVC/LCX/Z SERIES, 4-INPUT MAJORITY LOGIC GATE, PDSO8, 1.35 X 1 MM, 0.35 MM HEIGHT, SOT-1203, SON-8

输入元件 光电二极管 逻辑集成电路
文件: 总32页 (文件大小:336K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
74LVC1G99  
Ultra-configurable multiple function gate; 3-state  
Rev. 8 — 5 April 2013  
Product data sheet  
1. General description  
The 74LVC1G99 provides a low voltage, ultra-configurable, multiple function gate with  
3-state output. The device can be configured as one of several logic functions including,  
AND, OR, NAND, NOR, XOR, XNOR, inverter, buffer and MUX. No external components  
are required to configure the device as all inputs can be connected directly to VCC or  
GND. The 3-state output is controlled by the output enable input (OE). A HIGH level at OE  
causes the output (Y) to assume a high-impedance OFF-state. When OE is LOW, the  
output state is determined by the signals applied to the Schmitt trigger inputs (A, B, C and  
D).  
Due to the use of Schmitt trigger inputs the device is tolerant of slowly changing input  
signals, transforming them into sharply defined, jitter free output signals. By eliminating  
leakage current paths to VCC and GND, the inputs and disabled output are also  
over-voltage tolerant, making the device suitable for mixed-voltage applications.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
The 74LVC1G99 is fully specified over the supply range from 1.65 V to 5.5 V.  
2. Features and benefits  
Wide supply voltage range from 1.65 V to 5.5 V  
5 V tolerant inputs for interfacing with 5 V logic  
High noise immunity  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8-B/JESD36 (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C.  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
3. Ordering information  
Table 1.  
Ordering information  
Type number  
Package  
Temperature range Name  
Description  
Version  
74LVC1G99DP  
74LVC1G99GT  
74LVC1G99GF  
74LVC1G99GD  
74LVC1G99GM  
74LVC1G99GN  
74LVC1G99GS  
40 C to +125 C  
40 C to +125 C  
40 C to +125 C  
40 C to +125 C  
40 C to +125 C  
40 C to +125 C  
40 C to +125 C  
TSSOP8 plastic thin shrink small outline package; 8 leads; body SOT505-2  
width 3 mm; lead length 0.5 mm  
XSON8  
XSON8  
XSON8  
XQFN8  
XSON8  
XSON8  
plastic extremely thin small outline package; no leads; SOT833-1  
8 terminals; body 1 1.95 0.5 mm  
extremely thin small outline package; no leads;  
SOT1089  
8 terminals; body 1.35 1 0.5 mm  
plastic extremely thin small outline package; no leads; SOT996-2  
8 terminals; body 3 2 0.5 mm  
plastic, extremely thin quad flat package; no leads;  
8 terminals; body 1.6 1.6 0.5 mm  
SOT902-2  
SOT1116  
SOT1203  
extremely thin small outline package; no leads;  
8 terminals; body 1.2 1.0 0.35 mm  
extremely thin small outline package; no leads;  
8 terminals; body 1.35 1.0 0.35 mm  
4. Marking  
Table 2.  
Marking codes  
Type number  
74LVC1G99DP  
74LVC1G99GT  
74LVC1G99GF  
74LVC1G99GD  
74LVC1G99GM  
74LVC1G99GN  
74LVC1G99GS  
Marking code[1]  
V99  
V99  
YF  
V99  
V99  
YF  
YF  
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
2 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
5. Functional diagram  
OE  
A
B
Y
C
D
001aah322  
Fig 1. Logic symbol  
6. Pinning information  
6.1 Pinning  
74LVC1G99  
OE  
A
1
2
3
4
8
7
6
5
V
Y
CC  
74LVC1G99  
B
D
C
1
2
3
4
8
7
6
5
OE  
A
V
Y
CC  
GND  
B
D
C
GND  
001aah324  
Transparent top view  
001aah323  
Fig 2. Pin configuration SOT505-2  
Fig 3. Pin configuration SOT833-1, SOT1089,  
SOT1116 and SOT1203  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
3 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
74LVC1G99  
terminal 1  
index area  
Y
1
7
6
5
OE  
A
74LVC1G99  
OE  
A
1
2
3
4
8
7
6
5
V
Y
CC  
D
C
2
3
B
D
C
B
GND  
001aah325  
001aal775  
Transparent top view  
Transparent top view  
Fig 4. Pin configuration SOT996-2  
Fig 5. Pin configuration SOT902-2  
6.2 Pin description  
Table 3.  
Symbol  
Pin description  
Pin  
Description  
SOT505-2, SOT833-1, SOT1089,  
SOT1116, SOT1203 and SOT996-2  
SOT902-2  
OE  
A
1
2
3
4
5
6
7
8
7
6
5
4
3
2
1
8
output enable input OE (active LOW)  
data input  
B
data input  
GND  
C
ground (0 V)  
data input  
D
data input  
Y
data output  
VCC  
supply voltage  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
4 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
7. Functional description  
Table 4.  
Function table[1]  
Input  
OE  
L
Output  
D
L
C
L
B
L
A
L
Y
L
L
L
L
L
H
L
H
L
L
L
L
H
H
L
L
L
L
H
L
H
L
L
L
H
H
H
H
L
L
L
L
H
L
L
L
L
H
H
L
H
H
H
L
L
L
H
L
L
H
H
H
H
H
H
H
H
X
L
L
L
H
L
L
L
H
H
L
H
L
L
L
H
L
L
H
H
H
H
X
H
H
L
L
L
H
L
L
H
H
X
L
H
X
L
H
Z
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
5 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
7.1 Logic configurations  
Table 5.  
Function selection table  
Primary function  
Complementary function  
3-state buffer  
3-state inverter  
3-state 2-input multiplexer  
3-state 2-input multiplexer with inverting output  
3-state 2-input AND  
3-state 2-input NOR with two inverting inputs  
3-state 2-input NOR with one inverting input  
3-state 2-input NOR  
3-state 2-input AND with one inverting input  
3-state 2-input AND with two inverting inputs  
3-state 2-input NAND  
3-state 2-input OR with two inverting inputs  
3-state 2-input OR with one inverting input  
3-state 2-input OR  
3-state 2-input NAND with one inverting input  
3-state 2-input NAND with two inverting inputs  
3-state 2-input XOR  
3-state 2-input XNOR  
3-state 2-input XOR with one inverting input  
7.2 3-state buffer functions available  
Table 6.  
Function table[1]  
See Figure 6.  
Function  
Input  
OE  
L
A
B
C
D
3-state buffer  
input  
H or L  
L
L
L
H or L  
input  
H
L
L
L
H
input  
input  
L
L
L
H
L
H
L
H
H or L  
input  
input  
input  
L
H or L  
L
L
L
H
L
H or L  
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input  
Y
001aah326  
Fig 6. 3-state buffer function  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
6 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
7.3 3-state inverter functions available  
Table 7.  
Function table[1]  
See Figure 7.  
Function  
Input  
OE  
L
A
B
C
D
3-state inverter  
input  
H or L  
input  
H
L
H
L
X
H
H
L
L
input  
input  
L
H
L
H
L
L
L
H
H or L  
H
input  
input  
input  
L
H or L  
H
H
L
H
H or L  
[1] H = HIGH voltage level;  
L = LOW voltage level.  
X = don’t care.  
OE  
input  
Y
001aah327  
Fig 7. 3-state inverter function  
7.4 3-state multiplexer functions available  
Table 8.  
Function table[1]  
See Figure 8.  
Function  
Input  
OE  
L
A
B
C
D
L
3-state 2-input  
multiplexer  
input 1  
input 2  
input 1  
input 2  
input 2  
input 1  
input 2  
input 1  
input 1 or input 2  
input 2 or input 1  
input 1 or input 2  
input 2 or input 1  
L
L
L
H
H
L
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
OE  
input 1  
input 1  
Y
Y
input 2  
A/B  
input 2  
A/B  
001aah328  
Fig 8. 3-state 2-input multiplexer function  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
7 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
7.5 3-state AND/NOR functions available  
Table 9.  
Function table[1]  
See Figure 9.  
Number of inputs Function  
AND/NAND  
Input  
OE  
L
OR/NOR  
A
L
B
C
D
L
L
2
2
3-state AND  
3-state AND  
3-state NOR  
3-state NOR  
input 1  
input 2  
input 2  
input 1  
L
L
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
OE  
input 1  
input 2  
Y
Y
001aah329  
Fig 9. 3-state AND/NOR function  
Table 10. Function table[1]  
See Figure 10.  
Number of inputs Function  
AND/NAND  
Input  
OR/NOR  
OE  
L
A
B
C
D
L
2
2
3-state AND  
3-state AND  
3-state NOR  
3-state NOR  
input 2  
H
L
input 1  
input 2  
L
input 1  
H
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
OE  
input 1  
input 2  
Y
Y
001aah330  
Fig 10. 3-state AND/NOR function  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
8 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
Table 11. Function table[1]  
See Figure 11.  
Number of inputs Function  
AND/NAND  
Input  
OR/NOR  
OE  
L
A
B
C
D
L
2
2
3-state AND  
3-state AND  
3-state NOR  
3-state NOR  
input 1  
H
L
input 2  
input 1  
L
input 2  
H
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
OE  
input 1  
input 2  
Y
Y
001aah331  
Fig 11. 3-state AND/NOR function  
Table 12. Function table[1]  
See Figure 12.  
Number of inputs Function  
AND/NAND  
Input  
OR/NOR  
OE  
L
A
B
C
D
L
L
2
2
3-state AND  
3-state AND  
3-state NOR  
3-state NOR  
input 1  
input 2  
H
H
input 2  
input 1  
L
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
OE  
input 1  
input 2  
Y
Y
001aah332  
Fig 12. 3-state AND/NOR function  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
9 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
7.6 3-state NAND/OR functions available  
Table 13. Function table[1]  
See Figure 13.  
Number of inputs Function  
AND/NAND  
Input  
OR/NOR  
OE  
L
A
L
B
C
D
H
H
2
2
3-state NAND  
3-state NAND  
3-state OR  
3-state OR  
input 1  
input 2  
input 2  
input 1  
L
L
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
OE  
input 1  
input 2  
Y
Y
001aah333  
Fig 13. 3-state NAND/OR function  
Table 14. Function table[1]  
See Figure 14.  
Number of inputs Function  
AND/NAND  
Input  
OR/NOR  
OE  
L
A
B
C
D
H
L
2
2
3-state NAND  
3-state NAND  
3-state OR  
3-state OR  
input 2  
H
L
input 1  
input 2  
L
input 1  
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
OE  
input 1  
input 2  
Y
Y
001aah334  
Fig 14. 3-state NAND/OR function  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
10 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
Table 15. Function table[1]  
See Figure 15.  
Number of inputs Function  
AND/NAND  
Input  
OR/NOR  
OE  
L
A
B
C
D
H
L
2
2
3-state NAND  
3-state NAND  
3-state OR  
3-state OR  
input 1  
H
L
input 2  
input 1  
L
input 2  
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
OE  
input 1  
input 2  
Y
Y
001aah335  
Fig 15. 3-state AND/NOR function  
Table 16. Function table[1]  
See Figure 16.  
Number of inputs Function  
AND/NAND  
Input  
OR/NOR  
OE  
L
A
B
C
D
L
2
2
3-state NAND  
3-state NAND  
3-state OR  
3-state OR  
input 1  
input 2  
H
H
input 2  
input 1  
L
L
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
OE  
input 1  
input 2  
Y
Y
001aah336  
Fig 16. 3-state AND/NOR function  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
11 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
7.7 3-state XOR/XNOR functions available  
Table 17. Function table[1]  
See Figure 17.  
Function  
Input  
OE  
L
A
B
C
D
3-state XOR  
input 1  
input 2  
H or L  
H or L  
L
H or L  
H or L  
input 1  
input 2  
H
L
input 2  
input 1  
input 2  
input 1  
input 2  
input 1  
L
L
L
H
L
H
L
input 1  
input 2  
L
L
H
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
Y
001aah337  
Fig 17. 3-state XOR function  
Table 18. Function table[1]  
See Figure 18.  
Function  
Input  
OE  
L
A
B
C
D
3-state XOR  
H
L
input 1  
input 2  
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
Y
001aah338  
Fig 18. 3-state XOR function  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
12 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
Table 19. Function table[1]  
See Figure 19.  
Function  
Input  
OE  
L
A
B
C
D
3-state XOR  
H
L
input 1  
input 2  
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
Y
001aah339  
Fig 19. 3-state XOR function  
Table 20. Function table[1]  
See Figure 20.  
Function  
Input  
OE  
L
A
H
H
B
L
C
D
3-state XNOR  
input 1  
input 2  
input 2  
input 1  
L
L
[1] H = HIGH voltage level;  
L = LOW voltage level.  
OE  
input 1  
input 2  
Y
001aah340  
Fig 20. 3-state XNOR function  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
13 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
8. Limiting values  
Table 21. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).  
Symbol  
VCC  
IIK  
Parameter  
Conditions  
Min  
0.5  
50  
0.5  
-
Max  
+6.5  
-
Unit  
V
supply voltage  
input clamping current  
input voltage  
VI < 0 V  
mA  
V
[1]  
VI  
+6.5  
50  
VCC + 0.5  
+6.5  
50  
100  
-
IOK  
output clamping current  
output voltage  
VO > VCC or VO < 0 V  
Active mode  
mA  
V
[1][2]  
[1][2]  
VO  
0.5  
0.5  
-
Power-down mode  
VO = 0 V to VCC  
V
IO  
output current  
mA  
mA  
mA  
mW  
C  
ICC  
IGND  
Ptot  
Tstg  
supply current  
-
ground current  
100  
-
[3]  
total power dissipation  
storage temperature  
Tamb = 40 C to +125 C  
250  
+150  
65  
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
[2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.  
[3] For TSSOP8 package: above 110 C the value of Ptot derates linearly with 8.0 mW/K.  
For XSON8 and XQFN8 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.  
9. Recommended operating conditions  
Table 22. Operating conditions  
Symbol  
VCC  
VI  
Parameter  
Conditions  
Min  
Max  
5.5  
5.5  
VCC  
5.5  
+125  
20  
Unit  
V
supply voltage  
input voltage  
output voltage  
1.65  
0
V
VO  
Active mode  
0
V
Power-down mode; VCC = 0 V  
0
V
Tamb  
ambient temperature  
40  
C  
t/V  
input transition rise and fall rate  
VCC = 1.65 V to 2.7 V  
VCC = 2.7 V to 4.5 V  
VCC = 4.5 V to 5.5 V  
-
-
-
ns/V  
ns/V  
ns/V  
10  
5
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
14 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
10. Static characteristics  
Table 23. Static characteristics  
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
Min  
Typ[1] Max  
Unit  
Tamb = 40 C to +85 C  
VOH  
HIGH-level output voltage VI = VT+ or VT  
IO = 100 A; VCC = 1.65 V to 5.5 V  
VCC 0.1  
1.2  
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
IO = 4 mA; VCC = 1.65 V  
IO = 8 mA; VCC = 2.3 V  
IO = 12 mA; VCC = 2.7 V  
IO = 24 mA; VCC = 3.0 V  
IO = 32 mA; VCC = 4.5 V  
VI = VT+ or VT  
1.9  
2.2  
2.3  
3.8  
VOL  
LOW-level output voltage  
IO = 100 A; VCC = 1.65 V to 5.5 V  
IO = 4 mA; VCC = 1.65 V  
IO = 8 mA; VCC = 2.3 V  
-
-
-
-
-
-
-
-
-
0.1  
V
-
0.45  
0.3  
V
-
V
IO = 12 mA; VCC = 2.7 V  
IO = 24 mA; VCC = 3.0 V  
IO = 32 mA; VCC = 4.5 V  
VCC = 0 V to 5.5 V; VI = 5.5 V or GND  
-
0.4  
V
-
0.55  
0.55  
5  
V
-
V
II  
input leakage current  
0.1  
0.1  
A  
A  
IOZ  
OFF-state output current  
VCC = 3.6 V; VI = VIH or VIL;  
VO = 5.5 V or GND  
10  
IOFF  
ICC  
power-off leakage current VCC = 0 V; VI or VO = 5.5 V  
-
-
0.1  
10  
A  
A  
supply current  
VCC = 1.65 V to 5.5 V;  
0.1  
10  
VI = 5.5 V or GND; IO = 0 A  
ICC  
additional supply current  
per pin; VCC = 2.3 V to 5.5 V;  
VI = VCC 0.6 V; IO = 0 A  
-
-
5
500  
-
A  
CI  
input capacitance  
VCC = 3.3 V; VI = GND to VCC  
2.5  
pF  
Tamb = 40 C to +125 C  
VOH HIGH-level output voltage VI = VT+ or VT  
IO = 100 A; VCC = 1.65 V to 5.5 V  
IO = 4 mA; VCC = 1.65 V  
IO = 8 mA; VCC = 2.3 V  
IO = 12 mA; VCC = 2.7 V  
IO = 24 mA; VCC = 3.0 V  
IO = 32 mA; VCC = 4.5 V  
VI = VT+ or VT  
VCC 0.1  
0.95  
1.7  
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
1.9  
2.0  
3.4  
VOL  
LOW-level output voltage  
IO = 100 A; VCC = 1.65 V to 5.5 V  
IO = 4 mA; VCC = 1.65 V  
IO = 8 mA; VCC = 2.3 V  
-
-
-
-
-
-
-
-
-
-
-
-
0.1  
V
V
V
V
V
V
0.70  
0.45  
0.60  
0.80  
0.80  
IO = 12 mA; VCC = 2.7 V  
IO = 24 mA; VCC = 3.0 V  
IO = 32 mA; VCC = 4.5 V  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
15 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
Table 23. Static characteristics …continued  
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
Min  
Typ[1] Max  
Unit  
A  
II  
input leakage current  
OFF-state output current  
VCC = 0 V to 5.5 V; VI = 5.5 V or GND  
-
-
-
-
100  
200  
IOZ  
VCC = 3.6 V; VI = VIH or VIL;  
VO = 5.5 V or GND  
A  
IOFF  
ICC  
power-off leakage current VCC = 0 V; VI or VO = 5.5 V  
-
-
-
-
200  
A  
A  
supply current  
VCC = 1.65 V to 5.5 V;  
200  
VI = 5.5 V or GND; IO = 0 A  
ICC  
additional supply current  
per pin; VCC = 2.3 V to 5.5 V;  
-
-
5000  
A  
VI = VCC 0.6 V; IO = 0 A  
[1] All typical values are measured at VCC = 3.3 V and Tamb = 25 C.  
11. Dynamic characteristics  
Table 24. Dynamic characteristics  
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 23.  
Symbol Parameter  
Conditions  
25 C  
40 C to +125 C  
Unit  
Min Typ[1]  
Max  
Min  
Max  
Max  
(85 C) (125 C)  
[2]  
[2]  
[2]  
[2]  
tpd  
propagation delay A to Y; see Figure 21  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
-
-
-
-
-
7.5  
5.0  
5.4  
4.5  
3.8  
-
-
-
-
-
2.8  
2.0  
2.0  
1.8  
1.8  
30.8  
11.7  
9.0  
38.5  
14.6  
11.3  
10.5  
6.9  
ns  
ns  
ns  
ns  
ns  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
B to Y; see Figure 21  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
8.4  
5.5  
-
-
-
-
-
7.5  
5.0  
5.4  
4.5  
3.8  
-
-
-
-
-
2.8  
2.0  
2.0  
1.8  
1.8  
28.9  
11.3  
9.0  
36.2  
14.2  
11.3  
10.3  
6.8  
ns  
ns  
ns  
ns  
ns  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
C to Y; see Figure 21  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
8.2  
5.4  
-
-
-
-
-
7.8  
5.2  
5.3  
4.6  
3.8  
-
-
-
-
-
3.2  
2.3  
2.3  
2.3  
1.8  
29.8  
12.3  
9.6  
37.3  
15.4  
12.0  
10.8  
7.2  
ns  
ns  
ns  
ns  
ns  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
D to Y; see Figure 21  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
8.6  
5.7  
-
-
-
-
-
7.0  
4.6  
4.8  
4.1  
3.4  
-
-
-
-
-
2.8  
2.0  
2.0  
1.8  
1.6  
25.7  
10.7  
9.2  
32.2  
13.4  
11.5  
9.5  
ns  
ns  
ns  
ns  
ns  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
7.6  
5.2  
6.5  
74LVC1G99  
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© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
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74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
Table 24. Dynamic characteristics …continued  
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 23.  
Symbol Parameter  
Conditions  
25 C  
40 C to +125 C  
Unit  
Min Typ[1]  
Max  
Min  
Max  
Max  
(85 C) (125 C)  
[3]  
[4]  
[5]  
ten  
enable time  
OE to Y; see Figure 22  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
-
-
-
-
-
5.7  
3.8  
4.2  
3.5  
2.7  
-
-
-
-
-
2.0  
1.4  
1.4  
1.4  
1.4  
25.2  
11.3  
8.6  
32.0  
14.0  
11.0  
9.0  
ns  
ns  
ns  
ns  
ns  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
OE to Y; see Figure 22  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
7.0  
4.7  
6.0  
tdis  
disable time  
-
-
-
-
-
5.7  
3.6  
4.5  
4.5  
3.4  
-
-
-
-
-
3.0  
2.0  
2.0  
2.1  
1.0  
15.0  
5.8  
6.6  
5.9  
4.5  
19.0  
7.3  
8.2  
7.4  
5.6  
ns  
ns  
ns  
ns  
ns  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
CPD  
power dissipation per buffer (output enabled);  
capacitance  
fi = 10 MHz; CL = 50 pF;  
VI = GND to VCC  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
-
-
-
-
-
14  
16  
18  
25  
30  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF  
pF  
pF  
pF  
pF  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
[1] All typical values are measured at nominal VCC  
[2] tpd is the same as tPLH and tPHL  
[3] ten is the same as tPZH and tPZL  
[4] dis is the same as tPHZ and tPLZ  
.
.
.
t
.
[5] CPD is used to determine the dynamic power dissipation (PD in W).  
PD = CPD VCC2 fi N + (CL VCC2 fo) where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
VCC = supply voltage in V;  
N = number of inputs switching;  
(CL VCC2 fo) = sum of the outputs.  
74LVC1G99  
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© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
17 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
12. Waveforms  
V
I
V
V
M
A, B, C, D input  
GND  
M
t
t
PLH  
PHL  
V
OH  
V
V
V
V
Y output  
M
M
V
OL  
t
t
PHL  
PLH  
V
OH  
Y output  
M
M
V
OL  
001aah341  
Measurement points are given in Table 25.  
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.  
Fig 21. The data input (A, B, C, D) to output (Y) propagation delays  
V
I
OE input  
V
M
GND  
t
t
PZL  
PLZ  
V
CC  
output  
LOW-to-OFF  
OFF-to-LOW  
V
M
V
X
V
OL  
t
t
PHZ  
PZH  
V
OH  
V
Y
output  
HIGH-to-OFF  
OFF-to-HIGH  
V
M
GND  
outputs  
enabled  
outputs  
enabled  
outputs  
disabled  
mna644  
Measurement points are given in Table 25.  
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.  
Fig 22. 3-state enable and disable times  
Table 25. Measurement points  
Supply voltage  
VCC  
Input  
VM  
Output  
VM  
VX  
VY  
1.65 V to 1.95 V  
2.3 V to 2.7 V  
2.7 V  
0.5VCC  
0.5VCC  
1.5 V  
1.5 V  
0.5VCC  
0.5VCC  
0.5VCC  
1.5 V  
VOL + 0.15 V  
VOL + 0.15 V  
VOL + 0.3 V  
VOL + 0.3 V  
VOL + 0.3 V  
VOH 0.15 V  
VOH 0.15 V  
VOH 0.3 V  
VOH 0.3 V  
VOH 0.3 V  
3.0 V to 3.6 V  
4.5 V to 5.5 V  
1.5 V  
0.5VCC  
74LVC1G99  
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© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
18 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
V
EXT  
V
CC  
R
L
V
V
O
I
G
DUT  
R
T
C
L
R
L
mna616  
Test data is given in Table 26.  
Definitions for test circuit:  
RL = Load resistance.  
CL = Load capacitance including jig and probe capacitance.  
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.  
VEXT = External voltage for measuring switching times.  
Fig 23. Test circuit for measuring switching times  
Table 26. Test data  
Supply voltage  
Input  
VI  
Load  
CL  
VEXT  
tr = tf  
RL  
tPLH, tPHL  
open  
tPZH, tPHZ  
GND  
tPZL, tPLZ  
2VCC  
2VCC  
6 V  
1.65 V to 1.95 V  
2.3 V to 2.7 V  
2.7 V  
VCC  
VCC  
2.7 V  
2.7 V  
VCC  
2.0 ns  
2.0 ns  
2.5 ns  
2.5 ns  
2.5 ns  
30 pF  
30 pF  
50 pF  
50 pF  
50 pF  
1 k  
500   
500   
500   
500   
open  
GND  
open  
GND  
3.0 V to 3.6 V  
4.5 V to 5.5 V  
open  
GND  
6 V  
open  
GND  
2VCC  
13. Transfer characteristics  
Table 27. Transfer characteristics  
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 23  
Symbol Parameter  
Conditions  
40 C to +85 C  
Min Max  
Typ[1]  
40 C to +125 C  
Min Max  
Unit  
VT+  
positive-going  
see Figure 24, Figure 25,  
threshold voltage Figure 26, Figure 27 and  
Figure 28  
VCC = 1.8 V  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
VCC = 5.5 V  
0.70  
1.11  
1.50  
2.16  
2.61  
1.02  
1.20  
1.60  
2.00  
2.74  
3.33  
0.67  
1.20  
V
1.42  
1.79  
2.52  
2.99  
1.08  
1.47  
2.13  
2.58  
1.60  
2.00  
2.74  
3.33  
V
V
V
V
74LVC1G99  
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© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
19 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
Table 27. Transfer characteristics …continued  
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 23  
Symbol Parameter  
Conditions  
40 C to +85 C  
Min Max  
Typ[1]  
40 C to +125 C  
Min Max  
Unit  
VT  
negative-going  
see Figure 24, Figure 25,  
threshold voltage Figure 26, Figure 27 and  
Figure 28  
VCC = 1.8 V  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
VCC = 5.5 V  
0.30  
0.58  
0.80  
1.21  
1.45  
0.53  
0.72  
1.00  
1.30  
1.90  
2.29  
0.30  
0.75  
V
0.77  
1.04  
1.55  
1.86  
0.58  
0.80  
1.21  
1.45  
1.03  
1.33  
1.93  
2.32  
V
V
V
V
VH  
hysteresis voltage (VT+ VT); see Figure 24,  
Figure 25, Figure 26,  
Figure 27 and Figure 28  
VCC = 1.8 V  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
VCC = 5.5 V  
0.30  
0.40  
0.50  
0.71  
0.71  
0.48  
0.64  
0.75  
0.97  
1.13  
0.62  
0.80  
1.00  
1.20  
1.40  
0.23  
0.34  
0.44  
0.65  
0.65  
0.62  
0.80  
1.00  
1.20  
1.40  
V
V
V
V
V
[1] All typical values are measured at Tamb = 25 C  
14. Waveforms transfer characteristics  
V
O
V
T+  
V
I
V
H
V
T  
V
I
V
V
O
H
V
V
T+  
T−  
mna207  
mna208  
Fig 24. Transfer characteristic  
Fig 25. Definition of VT+, VTand VH  
74LVC1G99  
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© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
20 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
V
O
V
T+  
V
I
V
H
V
T  
V
O
V
I
V
H
V
V
T+  
T−  
mnb155  
mnb154  
Fig 26. Transfer characteristic  
Fig 27. Definition of VT+, VTand VH  
001aab594  
16  
I
CC  
(mA)  
12  
8
4
0
0
1
2
3
V (V)  
I
Fig 28. Typical 74LVC1G99 transfer characteristic; VCC = 3.0 V  
74LVC1G99  
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© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
21 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
15. Package outline  
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm  
SOT505-2  
D
E
A
X
c
H
v
M
y
A
E
Z
5
8
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
detail X  
1
4
e
w
M
b
p
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(1)  
(1)  
A
A
A
b
c
D
E
e
H
E
L
L
p
UNIT  
v
w
y
Z
θ
1
2
3
p
max.  
0.15  
0.00  
0.95  
0.75  
0.38  
0.22  
0.18  
0.08  
3.1  
2.9  
3.1  
2.9  
4.1  
3.9  
0.47  
0.33  
0.70  
0.35  
8°  
0°  
mm  
1.1  
0.65  
0.25  
0.5  
0.2  
0.13  
0.1  
Note  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
02-01-16  
SOT505-2  
- - -  
Fig 29. Package outline SOT505-2 (TSSOP8)  
74LVC1G99  
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© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
22 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm  
SOT833-1  
b
1
2
3
4
4×  
(2)  
L
L
1
e
8
7
6
5
e
1
e
1
e
1
8×  
A
(2)  
A
1
D
E
terminal 1  
index area  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
A
A
1
UNIT  
b
D
E
e
e
1
L
L
1
max max  
0.25  
0.17  
2.0  
1.9  
1.05  
0.95  
0.35 0.40  
0.27 0.32  
mm  
0.5 0.04  
0.6  
0.5  
Notes  
1. Including plating thickness.  
2. Can be visible in some manufacturing processes.  
REFERENCES  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
- - -  
07-11-14  
07-12-07  
SOT833-1  
- - -  
MO-252  
Fig 30. Package outline SOT833-1 (XSON8)  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
23 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
XSON8: extremely thin small outline package; no leads;  
8 terminals; body 1.35 x 1 x 0.5 mm  
SOT1089  
E
terminal 1  
index area  
D
A
A
1
detail X  
(2)  
(4×)  
e
L
(2)  
(8×)  
b
4
5
e
1
1
8
terminal 1  
index area  
L
1
X
0
0.5  
1 mm  
scale  
Dimensions  
Unit  
(1)  
A
A
b
D
E
e
e
1
L
L
1
1
max 0.5 0.04 0.20 1.40 1.05  
0.35 0.40  
0.15 1.35 1.00 0.55 0.35 0.30 0.35  
0.12 1.30 0.95 0.27 0.32  
mm nom  
min  
Note  
1. Including plating thickness.  
2. Visible depending upon used manufacturing technology.  
sot1089_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
10-04-09  
10-04-12  
SOT1089  
MO-252  
Fig 31. Package outline SOT1089 (XSON8)  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
24 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
XSON8: plastic extremely thin small outline package; no leads;  
8 terminals; body 3 x 2 x 0.5 mm  
SOT996-2  
D
B
A
E
A
A
1
detail X  
terminal 1  
index area  
e
1
C
v
C
C
A
B
b
e
L
1
y
1
y
w
C
1
4
L
2
L
8
5
X
0
1
2 mm  
scale  
Dimensions (mm are the original dimensions)  
(1)  
Unit  
A
A
1
b
D
E
e
e
1
L
L
1
L
2
v
w
y
y
1
max  
mm nom 0.5  
min  
0.05 0.35 2.1 3.1  
0.00 0.15 1.9 2.9  
0.5 0.15 0.6  
0.3 0.05 0.4  
0.5 1.5  
0.1 0.05 0.05 0.1  
sot996-2_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
07-12-21  
12-11-20  
SOT996-2  
Fig 32. Package outline SOT996-2 (XSON8)  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
25 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
XQFN8: plastic, extremely thin quad flat package; no leads;  
8 terminals; body 1.6 x 1.6 x 0.5 mm  
SOT902-2  
X
D
B
A
E
terminal 1  
index area  
A
A
1
detail X  
e
C
v
C
C
A
B
b
y
y
w
C
1
4
3
2
5
e
1
6
7
1
terminal 1  
index area  
8
L
metal area  
not for soldering  
L
1
0
1
2 mm  
scale  
Dimensions  
(1)  
Unit  
A
A
1
b
D
E
e
e
1
L
L
v
w
y
y
1
1
max 0.5 0.05 0.25 1.65 1.65  
0.35 0.15  
0.20 1.60 1.60 0.55 0.5 0.30 0.10 0.1 0.05 0.05 0.05  
0.00 0.15 1.55 1.55 0.25 0.05  
mm nom  
min  
Note  
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.  
sot902-2_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
- - -  
JEDEC  
JEITA  
- - -  
10-11-02  
11-03-31  
SOT902-2  
MO-255  
Fig 33. Package outline SOT902-2 (XQFN8)  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
26 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
XSON8: extremely thin small outline package; no leads;  
8 terminals; body 1.2 x 1.0 x 0.35 mm  
SOT1116  
b
4
(2)  
1
2
3
(4×)  
L
L
1
e
8
7
6
5
e
1
e
1
e
1
(2)  
(8×)  
A
1
A
D
E
terminal 1  
index area  
0
0.5  
scale  
1 mm  
Dimensions  
Unit  
(1)  
A
A
b
D
E
e
e
1
L
L
1
1
max 0.35 0.04 0.20 1.25 1.05  
0.35 0.40  
0.15 1.20 1.00 0.55 0.3 0.30 0.35  
0.12 1.15 0.95 0.27 0.32  
mm nom  
min  
Note  
1. Including plating thickness.  
2. Visible depending upon used manufacturing technology.  
sot1116_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
10-04-02  
10-04-07  
SOT1116  
Fig 34. Package outline SOT1116 (XSON8)  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
27 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
XSON8: extremely thin small outline package; no leads;  
8 terminals; body 1.35 x 1.0 x 0.35 mm  
SOT1203  
b
4
(2)  
(4×)  
1
2
3
L
L
1
e
8
7
6
5
e
1
e
1
e
1
(2)  
(8×)  
A
1
A
D
E
terminal 1  
index area  
0
L
0.5  
scale  
1 mm  
Dimensions  
Unit  
(1)  
A
A
b
D
E
e
e
1
L
1
1
max 0.35 0.04 0.20 1.40 1.05  
0.35 0.40  
0.15 1.35 1.00 0.55 0.35 0.30 0.35  
0.12 1.30 0.95 0.27 0.32  
mm nom  
min  
Note  
1. Including plating thickness.  
2. Visible depending upon used manufacturing technology.  
sot1203_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
10-04-02  
10-04-06  
SOT1203  
Fig 35. Package outline SOT1203 (XSON8)  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
28 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
16. Abbreviations  
Table 28. Abbreviations  
Acronym  
CMOS  
DUT  
Description  
Complementary Metal-Oxide Semiconductor  
Device Under Test  
ESD  
ElectroStatic Discharge  
Human Body Model  
HBM  
MM  
Machine Model  
TTL  
Transistor-Transistor Logic  
17. Revision history  
Table 29. Revision history  
Document ID  
74LVC1G99 v.8  
Modifications:  
74LVC1G99 v.7  
Modifications:  
74LVC1G99 v.6  
Modifications:  
74LVC1G99 v.5  
74LVC1G99 v.4  
74LVC1G99 v.3  
74LVC1G99 v.2  
74LVC1G99 v.1  
Release date  
20130405  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
74LVC1G99 v.7  
For type number 74LVC1G99GD XSON8U has changed to XSON8.  
20120622 Product data sheet 74LVC1G99 v.6  
For type number 74LVC1G99GM the SOT code has changed to SOT902-2.  
-
20111201  
Product data sheet  
-
74LVC1G99 v.5  
Legal pages updated.  
20101021  
20100416  
20091203  
20080208  
20080103  
Product data sheet  
-
-
-
-
-
74LVC1G99 v.4  
74LVC1G99 v.3  
74LVC1G99 v.2  
74LVC1G99 v.1  
-
Product data sheet  
Product data sheet  
Product data sheet  
Product data sheet  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
29 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
18. Legal information  
18.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
18.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
18.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
30 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications.  
18.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
19. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
74LVC1G99  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 8 — 5 April 2013  
31 of 32  
74LVC1G99  
NXP Semiconductors  
Ultra-configurable multiple function gate; 3-state  
20. Contents  
1
2
3
4
5
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3  
6
6.1  
6.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4  
7
Functional description . . . . . . . . . . . . . . . . . . . 5  
Logic configurations . . . . . . . . . . . . . . . . . . . . . 6  
3-state buffer functions available . . . . . . . . . . . 6  
3-state inverter functions available . . . . . . . . . . 7  
3-state multiplexer functions available . . . . . . . 7  
3-state AND/NOR functions available. . . . . . . . 8  
3-state NAND/OR functions available. . . . . . . 10  
3-state XOR/XNOR functions available . . . . . 12  
7.1  
7.2  
7.3  
7.4  
7.5  
7.6  
7.7  
8
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 14  
Recommended operating conditions. . . . . . . 14  
Static characteristics. . . . . . . . . . . . . . . . . . . . 15  
Dynamic characteristics . . . . . . . . . . . . . . . . . 16  
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Transfer characteristics . . . . . . . . . . . . . . . . . 19  
Waveforms transfer characteristics. . . . . . . . 20  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 29  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 29  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 30  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 30  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 30  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 30  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 31  
18.1  
18.2  
18.3  
18.4  
19  
20  
Contact information. . . . . . . . . . . . . . . . . . . . . 31  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2013.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 5 April 2013  
Document identifier: 74LVC1G99  

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