935318707564 [NXP]
RF Power Field-Effect Transistor;
| 型号： | 935318707564 |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总17页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A2T18H455W23N
Rev. 0, 5/2016
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
A2T18H455W23NR6
N--Channel Enhancement--Mode Lateral MOSFET
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 1805 to 1880 MHz.
1805–1880 MHz, 87 W AVG., 31.5 V
AIRFAST RF POWER LDMOS
TRANSISTOR
1800 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 31.5 Vdc,
DQA = 1080 mA, VGSB = 0.25 Vdc, Pout = 87 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
I
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1805 MHz
1840 MHz
1880 MHz
(dB)
14.5
15.2
15.9
(%)
48.1
48.2
48.4
8.1
8.1
8.0
–32.7
–33.0
–33.8
OM--1230--4L2S
PLASTIC
Features
Advanced High Performance In--Package Doherty
High Thermal Conductivity Packaging Technology for Reduced Thermal
Resistance
(2)
6
5
VBW
A
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Designed for Digital Predistortion Error Correction Systems
Carrier
RF /V
1
2
RF /V
outA DSA
inA GSA
(1)
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
(2)
VBW
B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
1. Pin connections 4 and 5 are DC coupled
and RF independent.
2. Device cannot operate with V current
DD
supplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2016. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +65
–6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +125
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.23
C/W
JC
Case Temperature 77C, 87 W Avg., W--CDMA, 31.5 Vdc, I
= 1080 mA, V
= 0.25 Vdc,
GSB
DQA
1840 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2
B
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
5
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GS
DS
On Characteristics -- Side A, Carrier
Gate Threshold Voltage
V
1.05
2.1
1.2
2.5
2.2
2.9
0.3
Vdc
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 200 Adc)
DS
D
Gate Quiescent Voltage
(V = 31.5 Vdc, I = 1080 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
DA
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.0 Adc)
V
0.05
0.15
DS(on)
GS
D
On Characteristics -- Side B, Peaking
Gate Threshold Voltage
V
0.8
1.2
1.6
0.3
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 300 Adc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 3 Adc)
V
0.05
0.15
DS(on)
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2,3)
Functional Tests — 1805 MHz
(In Freescale Doherty Test Fixture, 50 ohm system) V = 31.5 Vdc, I
= 1080 mA, V = 0.25 Vdc,
GSB
DD
DQA
P
= 87 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
14.0
43.0
7.3
14.5
48.1
8.1
17.0
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
—
dB
dBc
Adjacent Channel Power Ratio
ACPR
—
–32.7
–29.0
(1,2,3)
Functional Tests — 1880 MHz
(In Freescale Doherty Test Fixture, 50 ohm system) V = 31.5 Vdc, I
= 1080 mA, V = 0.25 Vdc,
GSB
DD
DQA
P
= 87 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
14.0
43.0
7.3
15.9
48.4
8.0
17.0
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
—
dB
dBc
ACPR
—
–33.8
–29.0
(3)
Load Mismatch (In Freescale Doherty Test Fixture, 50 ohm system) I
= 1080 mA, V
= 0.25 Vdc, f = 1840 MHz
No Device Degradation
DQA
GSB
VSWR 10:1 at 32 Vdc, 575 W CW Output Power
(3 dB Input Overdrive from 417 W CW Rated Power)
(3)
Typical Performance
(In Freescale Doherty Test Fixture, 50 ohm system) V = 31.5 Vdc, I
= 1080 mA, V = 0.25,
GSB
DD
DQA
1805–1880 MHz Bandwidth
P
P
@ 1 dB Compression Point, CW
P1dB
P3dB
—
436
589
–21
—
—
—
W
W
out
out
(4)
@ 3 dB Compression Point
—
—
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz frequency range)
VBW Resonance Point
VBW
—
140
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 75 MHz Bandwidth @ P = 87 W Avg.
G
—
—
1.4
—
—
dB
out
F
Gain Variation over Temperature
G
0.012
dB/C
(–30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.007
—
dB/C
(–30C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
OM--1230--4L2S
A2T18H455W23NR6
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
1. V
and V
must be tied together and powered by a single DC power supply.
DDB
DDA
2. Part internally matched both on input and output.
3. Measurements made with device in an asymmetrical Doherty configuration.
4. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
3
V
V
C13
DDA
A2T18H455W23N
Rev. 3
GGA
C30
C31
C26
C34
C27
C16
C11
R1
C18
C15
C24
C1
C21
C22
C6
C5
Z1
R3
C
P
C10
C4
C7
C8
C9
C23
C17
C19
R2
C28
C25
C2
C3
C12
C20
C29
C35
C33
C32
V
D76804
Note: V
C14
GGB
V
DDB
and V
must be tied together and powered by a single DC power supply.
DDB
DDA
Figure 1. A2T18H455W23NR6 Test Circuit Component Layout
Table 7. A2T18H455W23NR6 Test Circuit Component Designations and Values
Part
Description
10 pF Chip Capacitors
Part Number
Manufacturer
Murata
C1, C2, C3, C4, C5, C15,
C16, C17, C18
GQM2195C2E100JB12D
C6
C7
C8
C9
C10
1 pF Chip Capacitor
2.4 pF Chip Capacitor
0.7 pF Chip Capacitor
1.3 pF Chip Capacitor
0.2 pF Chip Capacitor
10 F Chip Capacitors
GQM2195C2E1R0BB12D
GQM2195C2E2R4BB12D
GQM2195C2ER70BB12D
GQM2195C2E1R3BB12D
800B0R2BT500XT
Murata
Murata
Murata
Murata
ATC
C11, C12, C24, C25, C26,
C27, C28, C29
GRM32ER61H106KA12L
Murata
C13, C14, C30, C31, C32,
C33
10 F Chip Capacitors
C5750X7S2A106M230KE
TDK
C19, C20
C21
10 pF Chip Capacitors
ATC800B100JT500XT
ATC800B0R3BT500XT
ATC800B6R8BT500XT
ATC800B8R2BT500XT
MCGPR63V477M13X26
WCR0805-3R3FI
ATC
0.3 pF Chip Capacitor
ATC
C22
6.8 pF Chip Capacitor
ATC
C23
8.2 pF Chip Capacitor
ATC
C34, C35
R1, R2
R3
470 F, 63 V Electrolytic Capacitors
3.3 , 1/8 W Chip Resistors
50 , 10 W Termination
Multicomp
Welwyn
Anaren
Anaren
MTL
060120A25X50-2
Z1
1800–2200 MHz Band, 90, 2 dB Doherty Coupler
X3C20F1-02S
PCB
Rogers RO4350B, 0.020, = 3.66
D76804
r
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS — 1805–1880 MHz
18
17.5
17
51
50
49
48
V
= 31.5 Vdc, P = 87 W (Avg.), I
= 1080 mA, V
= 0.25 Vdc
DD
out
DQA
GSB
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
D
16.5
16
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
47
G
ps
15.5
15
–1.7
–1.8
–26
–28
–30
–32
–34
–36
PARC
14.5
14
–1.9
–2
ACPR
13.5
13
–2.1
–2.2
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 2. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 87 Watts Avg.
0
V
DD
= 31.5 Vdc, P = 31 W (PEP), I
= 1080 mA
out
DQA
V
GSB
= 0.25 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
–15
–30
–45
–60
–75
IM3--U
IM3--L
IM5--L
IM5--U
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
300
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
–30
–31
–32
–33
–34
–35
–36
16.5
16
1
0
60
55
V
= 31.5 Vdc, I
= 1080 mA, V
= 0.25 Vdc, f = 1840 MHz
GSB
DD
DQA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
–1 dB = 64 W
D
15.5
15
50
45
40
35
30
–1
–2
–3
ACPR
G
ps
–2 dB = 92 W
14.5
14
–3 dB = 119 W
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
PARC
–4
–5
13.5
30
60
90
120
150
180
P
, OUTPUT POWER (WATTS)
out
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 1805–1880 MHz
18
17
60
–10
–20
–30
–40
–50
–60
–70
V
= 31.5 Vdc, I
= 1080 mA, V
= 0.25 Vdc
GSB
1880 MHz
DD
DQA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
50
40
30
20
10
0
1840 MHz
16
15
14
13
12
G
ps
1840 MHz
1880 MHz
1805 MHz
ACPR
1805 MHz
1880 MHz
1840 MHz
D
1805 MHz
1
10
100
500
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
17
V
P
= 31.5 Vdc
= 0 dBm
DD
Gain
in
16
I
= 1080 mA
= 0.25 Vdc
DQA
V
GSB
15
14
13
12
11
1700 1750 1800
1850 1900 1950 2000 2050 2100
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
6
Table 8. Carrier Side Load Pull Performance — Maximum Power Tuning
V
= 31.5 Vdc, I
= 758 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQA
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
53.9
50.5
50.3
Gain (dB)
(dBm)
(W)
(MHz)
1800
1840
1880
1.95 – j6.68
2.39 + j6.81
1.02 – j2.85
0.88 – j3.16
0.84 – j3.24
17.3
52.6
184
–14
–14
–16
2.49 – j7.21
3.51 – j8.21
3.13 + j7.24
4.17 + j7.60
16.9
17.2
52.7
52.6
185
183
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
53.0
51.4
50.4
Gain (dB)
(dBm)
(W)
(MHz)
1800
1840
1880
1.95 – j6.68
2.26 + j7.13
0.96 – j3.04
0.88 – j3.24
0.84 – j3.36
14.9
53.4
218
–19
–20
–21
2.49 – j7.21
3.51 – j8.21
2.98 + j7.75
4.21 + j8.41
14.8
15.0
53.4
53.3
219
214
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 31.5 Vdc, I
= 758 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQA
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
66.7
65.2
62.9
Gain (dB)
(dBm)
(W)
(MHz)
1800
1840
1880
1.95 – j6.68
2.33 + j7.08
2.57 – j1.37
2.25 – j1.61
1.87 – j2.06
20.3
49.8
96
–22
–22
–24
2.49 – j7.21
3.51 – j8.21
3.15 + j7.49
3.93 + j6.87
20.2
20.1
49.9
50.2
97
106
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
66.1
65.0
62.3
Gain (dB)
(dBm)
(W)
(MHz)
1800
1840
1880
1.95 – j6.68
2.29 + j7.35
2.51 – j1.37
1.93 – j1.94
1.82 – j2.29
18.3
50.5
112
–30
–28
–31
2.49 – j7.21
3.51 – j8.21
3.04 + j7.85
3.86 + j7.31
17.9
17.9
51.2
51.3
132
135
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
7
Table 10. Peaking Side Load Pull Performance — Maximum Power Tuning
V
= 31.5 Vdc, V
= 0 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
GSB
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
49.8
49.6
50.1
Gain (dB)
(dBm)
(W)
(MHz)
1800
1840
1880
0.99 – j5.23
0.91 + j5.01
1.00 – j2.79
0.98 – j2.99
0.98 – j3.11
12.9
54.9
309
–27
–28
–33
1.13 – j5.22
1.24 – j5.77
1.04 + j5.21
1.24 + j5.52
13.4
13.5
54.9
54.9
307
312
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
52.8
52.6
52.7
Gain (dB)
(dBm)
(W)
(MHz)
1800
1840
1880
0.99 – j5.23
0.90 + j5.14
1.04 – j2.95
1.03 – j3.11
1.03 – j3.24
10.8
55.6
365
–34
–35
–40
1.13 – j5.22
1.24 – j5.77
1.05 + j5.37
1.27 + j5.73
11.3
11.5
55.6
55.6
363
366
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 31.5 Vdc, V
= 0 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
GSB
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
62.9
62.9
63.1
Gain (dB)
(dBm)
(W)
(MHz)
1800
1840
1880
0.99 – j5.23
0.83 + j5.01
2.93 – j2.55
2.66 – j2.09
2.13 – j2.13
14.2
53.5
223
–34
–36
–39
1.13 – j5.22
1.24 – j5.77
0.92 + j5.19
1.10 + j5.49
14.8
14.8
53.3
53.5
212
226
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
61.8
61.9
62.5
Gain (dB)
(dBm)
(W)
(MHz)
1800
1840
1880
0.99 – j5.23
0.84 + j5.13
2.93 – j2.72
2.72 – j2.18
2.37 – j2.18
12.2
54.0
252
–43
–46
–50
1.13 – j5.22
1.24 – j5.77
0.95 + j5.35
1.15 + j5.70
12.7
12.8
53.8
53.9
239
247
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
8
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
0
0
-- 1
-- 2
-- 3
-- 4
-- 5
-- 6
-- 1
48.5
E
E
-- 2
-- 3
-- 4
-- 5
-- 6
64
56
54
58
62
60
P
P
P
50
52
51
50.5
52
51.5
50
49.5
49
1
2
1
2
0
3
4
5
6
0
3
4
5
6
REAL ()
REAL ()
Figure 8. P1dB Load Pull Ffficiency Contours (%)
Figure 7. P1dB Load Pull Output Power Contours (dBm)
0
-- 1
-- 2
-- 3
-- 4
-- 5
-- 6
0
-- 2 6
E
20.5
-- 2 4
-- 1 8
-- 2 2
-- 2 0
-- 1
20
19.5
E
-- 2
-- 3
-- 4
-- 5
-- 6
19
P
P
-- 1 6
18.5
-- 1 4
18
17.5
-- 1 2
17
-- 1 0
1
2
1
2
0
3
4
5
6
0
3
4
5
6
REAL ()
REAL ()
Figure 10. P1dB Load Pull AM/PM Contours ()
Figure 9. P1dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
0
-- 1
-- 2
-- 3
-- 4
-- 5
-- 6
0
50
-- 1
52
54
E
E
-- 2
-- 3
-- 4
-- 5
-- 6
56
64
58
60
62
P
P
53
52
52.5
51.5
51
50.5
50
49.5
1
2
1
2
0
3
4
5
6
0
3
4
5
6
REAL ()
REAL ()
Figure 11. P3dB Load Pull Output Power Contours (dBm)
Figure 12. P3dB Load Pull Efficiency Contours (%)
0
0
18.5
-- 3 0 -- 2 8
-- 2 6
-- 3 2
-- 1
-- 1
-- 2
-- 3
-- 4
-- 5
-- 6
-- 2 4
-- 2 2
18
E
E
-- 2
17.5
-- 3
P
17
P
-- 1 8
-- 1 6
-- 2 0
16.5
16
15.5
-- 4
-- 5
-- 6
15
1
2
1
2
0
3
4
5
6
0
3
4
5
6
REAL ()
REAL ()
Figure 14. P3dB Load Pull AM/PM Contours ()
Figure 13. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
10
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
0
-- 1
-- 2
-- 3
-- 4
-- 5
-- 6
0
-- 1
-- 2
-- 3
-- 4
-- 5
-- 6
E
E
62
60
P
P
58
53.5
56
54
54
52
53
52
48
52.5
50
51.5
51
46
1
2
1
2
0
3
4
5
6
0
3
4
5
6
REAL ()
REAL ()
Figure 15. P1dB Load Pull Output Power Contours (dBm)
Figure 16. P1dB Load Pull Ffficiency Contours (%)
0
0
-- 1
-- 1
-- 2
-- 3
-- 4
-- 5
-- 6
-- 4 0
-- 3 8
-- 2
E
E
-- 3 6
14.5
-- 3 4
-- 3 2
P
P
-- 3
-- 4
-- 5
-- 6
-- 2 8
-- 2 6
-- 3 0
14
13.5
-- 2 4
13
11
12.5
12
11.5
1
2
1
2
0
3
4
5
6
0
3
4
5
6
REAL ()
REAL ()
Figure 18. P1dB Load Pull AM/PM Contours ()
Figure 17. P1dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
11
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
0
-- 1
-- 2
-- 3
-- 4
-- 5
-- 6
0
51.5
52
-- 1
-- 2
60
E
E
58
-- 3
-- 4
-- 5
-- 6
P
P
56
54
55
54.5
54
52
53.5
50
48
53
52
52.5
46
1
2
0
3
4
5
6
1
2
0
3
4
5
6
REAL ()
REAL ()
Figure 19. P3dB Load Pull Output Power Contours (dBm)
Figure 20. P3dB Load Pull Ffficiency Contours (%)
0
0
-- 1
-- 1
-- 2
-- 3
-- 4
-- 5
-- 6
-- 5 0
-- 4 8
-- 2
-- 3
E
E
-- 4 6
-- 3 6
12.5
-- 4 4
-- 4 2
P
P
12
-- 4 0
-- 4
11.5
-- 3 8
-- 5
11
9
10.5
9.5
10
-- 3 4
-- 6
1
2
0
3
4
5
6
1
2
0
3
4
5
6
REAL ()
REAL ()
Figure 22. P3dB Load Pull AM/PM Contours ()
Figure 21. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
12
PACKAGE DIMENSIONS
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
13
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
14
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2016
Initial Release of Data Sheet
A2T18H455W23NR6
RF Device Data
Freescale Semiconductor, Inc.
16
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Document Number: A2T18H455W23N
Rev. 0, 5/2016
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