935345452598 [NXP]
RF Power Field-Effect Transistor;
| 型号： | 935345452598 |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总18页 (文件大小：770K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMRF5014H
Rev. 3, 05/2018
NXP Semiconductors
Technical Data
RF Power GaN Transistor
MMRF5014H
This 125 W CW RF power transistor is optimized for wideband operation up to
2700 MHz and includes input matching for extended bandwidth performance.
With its high gain and high ruggedness, this device is ideally suited for CW,
pulse and wideband RF applications.
1–2700 MHz, 125 W CW, 50 V
WIDEBAND
RF POWER GaN TRANSISTOR
This part is characterized and performance is guaranteed for applications
operating in the 1–2700 MHz band. There is no guarantee of performance when
this part is used in applications designed outside of these frequencies.
Typical Narrowband Performance: V = 50 Vdc, I = 350 mA, T = 25C
DD
DQ
A
P
(W)
Frequency
(MHz)
G
D
out
ps
Signal Type
(dB)
16.0
18.0
(%)
64.2
66.8
(1)
2500
125 CW
CW
(1)
2500
125 Peak
Pulse
(100 sec,
20% Duty Cycle)
NI--360H--2SB
Typical Wideband Performance: V = 50 Vdc, T = 25C
DD
A
(2)
(2)
P
(W)
Frequency
(MHz)
G
out
ps
D
Signal Type
(dB)
(%)
(3)
200–2500
100 CW
12.0
40.0
CW
(4)
1300–1900
125 CW
14.5
45.0
CW
Gate
Drain
1
2
Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(Top View)
(1)
2500
Pulse
(100 sec,
20% Duty Cycle)
> 20:1 at
All Phase
Angles
5.0 Peak
(3 dB
Overdrive)
50
No Device
Degradation
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
1. Measured in 2500 MHz narrowband test circuit.
2. The values shown are the minimum measured performance numbers across the
indicated frequency range.
3. Measured in 200–2500 MHz broadband reference circuit.
4. Measured in 1300–1900 MHz broadband reference circuit.
Features
Advanced GaN on SiC, offering high power density
Decade bandwidth performance
Low thermal resistance
Input matched for extended wideband performance
High ruggedness: > 20:1 VSWR
Typical Applications
Ideal for military end--use applications,
including the following:
Also suitable for commercial applications,
including the following:
– Narrowband and multi--octave
wideband amplifiers
– Public mobile radios, including
emergency service radios
– Radar
– Industrial, scientific and medical
– Wideband laboratory amplifiers
– Wireless cellular infrastructure
– Jammers
– EMC testing
2015, 2017–2018 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
125
Unit
Vdc
Vdc
Vdc
mA
C
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
V
DSS
V
–8, 0
GS
DD
V
0 to +50
18
Maximum Forward Gate Current @ T = 25C
I
GMAX
C
Storage Temperature Range
T
stg
–65 to +150
–55 to +150
–55 to +225
350
Case Operating Temperature Range
Operating Junction Temperature Range
T
C
C
T
J
C
(1)
Absolute Maximum Channel Temperature
T
MAX
C
Total Device Dissipation @ T = 25C
P
232
W
C
D
Derate above 25C
1.16
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
CW: Case Temperature 82C, 125 W CW, 50 Vdc, I = 350 mA, 2500 MHz
Symbol
(IR)
Value
Unit
(2)
R
0.86
C/W
JC
DQ
(3)
Thermal Resistance by Finite Element Analysis, Channel--to--Case
R
(FEA)
1.48
C/W
C/W
CHC
Case Temperature 85C, P = 85 W
D
Thermal Impedance by Infrared Measurement, Junction--to--Case
Z
(IR)
0.21
JC
Pulse: Case Temperature 58C, 125 W Peak, 100 sec Pulse Width,
20% Duty Cycle, 50 Vdc, I = 350 mA, 2500 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
1B, passes 500 V
A, passes 100 V
IV, passes 2000 V
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain Leakage Current
I
—
—
—
5
mAdc
Vdc
DSS
(V = –8 Vdc, V = 10 Vdc)
GS
DS
Drain--Source Breakdown Voltage
V
150
—
(BR)DSS
(V = –8 Vdc, I = 25 mAdc)
GS
D
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 25 mAdc)
V
–3.8
–3.2
–2.9
–2.7
–2.3
–2.2
Vdc
Vdc
GS(th)
GS(Q)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 350 mAdc, Measured in Functional Test)
V
DS
D
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = –4 Vdc)
DS
C
—
—
—
1.0
7.7
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = –4 Vdc)
DS
C
oss
GS
(4)
Input Capacitance
C
51.0
iss
(V = 50 Vdc, V = –4 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
1. Reliability tests were conducted at 225C. Operation with T
at 350C will reduce median time to failure.
MAX
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. R
(FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by
JC
[A + B/(T + 273)]
the expression MTTF (hours) = 10
, where T is the junction temperature in degrees Celsius, A = –8.44 and B = 7210.
4. Part internally input matched.
(continued)
MMRF5014H
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In NXP Test Fixture, 50 ohm system) V = 50 Vdc, I = 350 mA, P = 125 W Peak (25 W Avg.), f = 2500 MHz, 100
DD
DQ
out
sec Pulse Width, 20% Duty Cycle. [See note on correct biasing sequence.]
Power Gain
G
17.0
64.3
—
18.0
66.8
–12
20.0
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
IRL
–9
dB
Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) I = 350 mA
DQ
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
DD
2500
Pulse
> 20:1 at All Phase Angles
5.0 Peak
50
No Device Degradation
(100 sec,
(3 dB Overdrive)
20% Duty Cycle)
Table 5. Ordering Information
Device
Tape and Reel Information
R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel
Package
MMRF5014HR5
NI--360H--2SB
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set V to –5 V
GS
2. Turn on V to nominal supply voltage (50 V)
DS
3. Increase V until I current is attained
GS
DS
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce V down to –5 V
GS
3. Reduce V down to 0 V (Adequate time must be allowed
DS
for V to reduce to 0 V to prevent severe damage to device.)
DS
4. Turn off V
GS
MMRF5014H
RF Device Data
NXP Semiconductors
3
500–2500 MHz WIDEBAND REFERENCE CIRCUIT — 2.0 4.0 (5.1 cm 10.2 cm)
C9
C7*
C8*
C6
L2
C2*
L1
Q1
C1*
C12*
C10* C11*
C16*
C15*
C13*
R5
R4
C14*
C4*
C5*
R3
MMRF5014H
Rev. 0
D77847
C3
R2
R1
D1
+
*C1, C2, C4, C5, C7, C8, C10, C11, C12, C13, C14, C15 and C16 are mounted vertically.
Figure 2. MMRF5014H Wideband Reference Circuit Component Layout — 500–2500 MHz
Table 6. MMRF5014H Wideband Reference Circuit Component Designations and Values — 500–2500 MHz
Part
Description
Part Number
ATC800B330JT500XT
ATC800B0R4BT500XT
T491A225K016AT
ATC800B102JT50XT
EEV-HA1H221P
Manufacturer
C1, C5, C7
33 pF Chip Capacitors
ATC
ATC
C2
0.4 pF Chip Capacitor
C3
2.2 F, 16 V Tantalum Capacitor
1000 pF Chip Capacitors
220 F, 50 V Electrolytic Capacitor
2.2 F Chip Capacitor
Kemet
ATC
C4, C8
C6
Panasonic-ECG
Taiyo Yuden
ATC
C9
HMK432B7225KM-T
ATC800B0R8BT500XT
ATC800B9R1BT500XT
ATC800B0R5BT500XT
ATC800B0R2BT500XT
LGN971-KN-1
C10, C11
C12, C13
C14, C16
C15
0.8 pF Chip Capacitors
9.1 pF Chip Capacitors
ATC
0.5 pF Chip Capacitors
ATC
0.2 pF Chip Capacitor
ATC
D1
LED Green Diffused 1206, SMD
33 nH Inductor
OSRAM
Coilcraft
Coilcraft
NXP
L1
1812SMS-33NJLC
GA3095-ALC
L2
17.5 nH Inductor, 5 Turns
RF Power GaN Transistor
75 , 1/4 W Chip Resistor
500 Trimming Potentiometer, 11 Turns
470 , 1/4 W Chip Resistor
39 , 1/4 W Chip Resistors
Q1
MMRF5014H
R1
CRCW120675R0FKEA
3224W-1-501E
Vishay
Bourns
Vishay
Vishay
MTL
R2
R3
CRCW1206470RFKEA
CRCW120639R0FKEA
D77847
R4, R5
PCB
Rogers RO4350B 0.030, = 3.66
r
Note: Refer to MMRF5014H’s printed circuit boards and schematics to download the 500–2500 MHz heatsink drawing.
MMRF5014H
RF Device Data
NXP Semiconductors
4
TYPICAL CHARACTERISTICS — 500–2500 MHz
WIDEBAND REFERENCE CIRCUIT
70
65
60
55
22
21
20
19
18
17
16
15
14
13
12
11
10
V
= 50 Vdc, I = 300 mA, CW
DQ
DD
100 W
D
50
45
40
35
30
25
20
G
ps
10 W
100 W
15
10
400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600
f, FREQUENCY (MHz)
Figure 3. 500–2500 MHz Wideband Circuit Performance
MMRF5014H
RF Device Data
NXP Semiconductors
5
200–2500 MHz WIDEBAND REFERENCE CIRCUIT — 4.0 5.0 (10.2 cm 12.7 cm)
Section AA
MMRF5014H
Rev. 6
D68303
T2
R1**
R2**
T2
T1
C17*
C16*
C15*
B1
C2*
Q1
C3*
C1**
L2
R3
C7
C13*
See
Detail BB
R4
T1
L1
C12*
C6*
C8
C11
C5
V
DD
C4
C9
C10
C14
V
GG
**C1, C2, C3, C6, C12, C13, C15, C16, C17, R1, and R2 are mounted vertically.
**Stacked
Section AA
T2
C17*
C16*
C15*
B1
B2
T1
Detail BB 2X
Figure 4. MMRF5014H Wideband Reference Circuit Component Layout — 200–2500 MHz
MMRF5014H
RF Device Data
NXP Semiconductors
6
Table 7. MMRF5014H Wideband Reference Circuit Component Designations and Values — 200–2500 MHz
Part
Description
Part Number
Manufacturer
B1, B2
C1
Ferrite Beads
T22-6
Micro Metals
56 pF Chip Capacitor
ATC800B560JT500XT
ATC800B750JT500XT
ATC800B1R6BT500XT
C4532X7R1H685K
GRM319R72A153KA01D
ATC800B5R6BT500XT
GRM31CR72A105KAO1L
ATC800B1R4BT500XT
EEV-FK2A221M
ATC
C2
75 pF Chip Capacitor
ATC
C3
1.6 pF Chip Capacitor
ATC
C4
6.8 F Chip Capacitor
TDK
C5, C8, C9, C11
C6, C12
C7, C10
C13
0.015 F Chip Capacitors
5.6 pF Chip Capacitors
Murata
ATC
1 F Chip Capacitors
Murata
ATC
1.4 pF Chip Capacitor
C14
220 F, 100 V Electrolytic Capacitor
0.9 pF Chip Capacitors
Panasonic-ECG
ATC
C15, C17
C16
ATC800B0R9BT500XT
ATC800B470JT500XT
A04TJLC
47 pF Chip Capacitor
ATC
L1
12.5 nH Inductor, 4 Turns
22 nH Inductor
Coilcraft
Coilcraft
NXP
L2
1812SMS-22NJLC
MMRF5014H
Q1
RF Power GaN Transistor
10 , 3/4 W Chip Resistors
39 , 1/4 W Chip Resistors
25 Semi Rigid Coax, 0.770 Shield Length
25 Semi Rigid Coax, 0.850 Shield Length
R1, R2
R3, R4
T1
CRCW201010R0FKEF
CRCW120639R0FKEA
UT-070-25
Vishay
Vishay
Micro--Coax
Micro--Coax
MTL
T2
UT-070-25
PCB
Rogers RO4350B, 0.030, = 3.66
D68303
r
Note: Refer to MMRF5014H’s printed circuit boards and schematics to download the 200–2500 MHz heatsink drawing.
MMRF5014H
RF Device Data
NXP Semiconductors
7
TYPICAL CHARACTERISTICS — 200–2500 MHz
WIDEBAND REFERENCE CIRCUIT
23
22
21
20
19
18
17
70
65
60
55
50
45
40
V
= 50 Vdc, I = 350 mA, CW
DQ
DD
100 W
D
35
30
25
20
15
10
16
15
14
13
12
11
G
10 W
ps
100 W
200
600
1000
1400
1800
2200
2600
f, FREQUENCY (MHz)
Figure 5. 200–2500 MHz Wideband Circuit Performance
MMRF5014H
RF Device Data
NXP Semiconductors
8
TYPICAL CHARACTERISTICS — OPTIMIZED NARROWBAND PERFORMANCE
Narrowband Performance and Impedance Information (T = 25C)
C
The measured input and output impedances are presented to the input of the device at the package reference plane.
Measurements are performed in NXP narrowband fixture tuned at 500, 1000, 1500, 2000 and 2500 MHz.
32
30
28
26
24
80
72
64
56
48
40
32
24
16
8
1000 MHz
500 MHz
V
= 50 Vdc, I = 300 mA, CW
DD
DQ
2500 MHz
2000 MHz
500 MHz
D
1500 MHz
22
20
18
16
14
12
1000 MHz
1500 MHz
2500 MHz
G
ps
2000 MHz
0
0
20
40
60
80 100 120 140 160 180 200
P
, OUTPUT POWER (WATTS)
out
Figure 6. Power Gain and Drain Efficiency
versus CW Output Power
f
Z
Z
load
source
MHz
500
1.3 + j3.9
1.0 + j0.3
0.8 – j0.5
1.2 – j2.0
2.7 – j3.8
5.9 + j3.5
5.5 + j2.9
3.4 + j2.0
4.7 + j0.3
3.7 + j1.4
1000
1500
2000
2500
Z
Z
=
=
Test circuit impedance as measured
from gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50
50
Z
Z
load
source
Figure 7. Narrowband Fixtures: Series Equivalent Source and Load Impedances
MMRF5014H
RF Device Data
NXP Semiconductors
9
1300–1900 MHz WIDEBAND REFERENCE CIRCUIT — 2.0 3.0 (5.1 cm 7.6 cm)
V
GG
C2
C3 C4
R4 R5
R1
D1
R2
C7
C5 C6
C8
R3
L1
V
DD
L2
Q1
C1
C9*
MMRF5014H
Rev. 1
D67114
*C9 is mounted vertically.
Figure 8. MMRF5014H Wideband Reference Circuit Component Layout — 1300–1900 MHz
Table 8. MMRF5014H Wideband Reference Circuit Component Designations and Values — 1300–1900 MHz
Part
Description
Part Number
ATC600S180CT250XT
T491A225K016AT
ATC800B102JT50XT
ATC800B330JT500XT
HMK432B7225KM-T
476KXM050M
Manufacturer
C1
18 pF Chip Capacitor
ATC
C2
2.2 F Tantalum Capacitor
1000 pF Chip Capacitors
33 pF Chip Capacitors
Kemet
C3, C6
C4, C5
C7
ATC
ATC
2.2 F Chip Capacitor
Taiyo Tuden
Panasonic-ECG
ATC
C8
47 F, 100 V Electrolytic Capacitor
9.1 pF Chip Capacitor
C9
ATC800B9R1BT500XT
LGN971--KN--1
D1
LED Green Diffused 1206, SMD
RF Power GaN Transistor
75 , 1/4 W Chip Resistor
5 k Trimming Potentiometer, 11 Turns
5 k, 1/4 W Chip Resistor
39 , 1/4 W Chip Resistors
33 nH Inductors
OSRAM
NXP
Q1
MMRF5014H
R1
CRCW120675R0FKEA
3224W-1-502E
Vishay
Bourns
Vishay
Vishay
Coilcraft
MTL
R2
R3
CRCW12065K00FKEA
CRCW120639R0FKEA
1812SMS-33NJLC
D67114
R4, R5
L1, L2
PCB
Rogers 3010, 0.025, = 10.2
r
MMRF5014H
RF Device Data
NXP Semiconductors
10
TYPICAL CHARACTERISTICS — 1300–1900 MHz
WIDEBAND REFERENCE CIRCUIT
30
28
26
24
70
66
62
58
54
50
46
42
38
34
V
= 50 Vdc, I = 200 mA, P = 125 W, CW
DD
DQ
out
D
22
20
18
16
14
12
10
G
ps
30
1300
1400
1500
1600
1700
1800
1900
f, FREQUENCY (MHz)
Figure 9. Power Gain and Drain Efficiency
versus Frequency
20
75
70
65
60
V
= 50 Vdc, I = 200 mA, CW
DD
DQ
18
16
14
12
1900 MHz
1600 MHz
1900 MHz
G
ps
1300 MHz
55
50
45
40
35
30
25
1600 MHz
10
8
1300 MHz
D
6
4
2
0
0
20
40
60
80
100
120
140
160 180
P
, OUTPUT POWER (WATTS)
out
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MMRF5014H
RF Device Data
NXP Semiconductors
11
2500 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4.0 5.0 (10.2 cm 12.7 cm)
V
V
DD
GG
D65152
C12
C8
R2
C14 C7
C10
C3
C2
C4
C5
C9
C13
R1
C1
C6
C11
MMRF5014H
Rev. 4
Figure 11. MMRF5014H Narrowband Test Circuit Component Layout — 2500 MHz
Table 9. MMRF5014H Narrowband Test Circuit Component Designations and Values — 2500 MHz
Part
Description
Part Number
Manufacturer
C1
3.9 pF Chip Capacitor
ATC600F3R9BT250XT
ATC
ATC
C2, C3, C4, C5, C6
12 pF Chip Capacitors
4.7 F Chip Capacitors
0.1 F Chip Capacitor
ATC600F120JT250XT
C4532X7R1H475K200KB
GRM319R72A104KA01D
GRM32CR72A105KA35L
EEV-FK2A221M
C7, C14
C8
TDK
Murata
Murata
Panasonic-ECG
ATC
C9
1.0 F Chip Capacitor
C10
220 F, 100 V Electrolytic Capacitor
1 pF Chip Capacitor
C11
ATC600F1R0BT250XT
ATC800B102JT50XT
CRCW120656R0FKEA
CRCW12100000Z0EA
D65152
C12, C13
R1
1000 pF Chip Capacitors
56 , 1/4 W Chip Resistor
0 , 5 A Chip Resistor
ATC
Vishay
Vishay
MTL
R2
PCB
Rogers RO4350B, 0.030, = 3.66
r
MMRF5014H
RF Device Data
NXP Semiconductors
12
Z16
Z17
Z9
Z8
R2
V
BIAS
V
SUPPLY
+
C14 C7
C8
C12 C2
C3
C4
C5
C13
C9
C10
Z7
Z6
Z15
R1
RF
OUTPUT
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z10
Z11
Z12
Z13
Z14
C1
C6
C11
DUT
Figure 12. MMRF5014H Narrowband Test Circuit Schematic — 2500 MHz
Table 10. MMRF5014H Narrowband Test Circuit Microstrips — 2500 MHz
Microstrip
Description
Microstrip
Description
Z1
1.870 0.064 Microstrip
0.030 0.070 Microstrip
0.105 0.525 Microstrip
0.240 0.525 Microstrip
0.037 0.050 Microstrip
0.465 0.050 Microstrip
0.090 0.050 Microstrip
0.190 0.050 Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
0.145 0.515 Microstrip
0.353 0.515 Microstrip
0.040 0.064 Microstrip
0.687 0.064 Microstrip
1.020 0.064 Microstrip
0.468 0.050 Microstrip
0.158 0.050 Microstrip
0.078 0.050 Microstrip
Z2, Z3
Z4
Z5*
Z6
Z7
Z8
Z9
* Line length include microstrip bends
MMRF5014H
RF Device Data
NXP Semiconductors
13
TYPICAL CHARACTERISTICS — 2500 MHz
22
21
20
19
18
17
16
15
14
13
12
11
10
9
70
I
= 350 mA, f = 2500 MHz
DQ
50 V
45 V
Pulse Width = 100 sec
Duty Cycle = 20%
40 V
60
50
40
30
20
10
35 V
30 V
V
= 25 V
DD
50 V
45 V
40 V
35 V
90
I
= 350 mA, f = 2500 MHz
Pulse Width = 100 sec
DQ
30 V
70
Duty Cycle = 20%
V
= 25 V
50
DD
10
30
110
130 150 170 190
0
20
40
60
, OUTPUT POWER (WATTS) PEAK
out
80
100
120 140 160 180
P
, OUTPUT POWER (WATTS) PEAK
P
out
Figure 13. Power Gain versus Output Power
and Drain Voltage (1)
Figure 14. Drain Efficiency versus Output Power
and Drain Voltage (1)
180
160
140
120
100
80
22
21
20
19
18
17
16
70
T
= –55_C
D
C
60
50
T
= 25C
C
–55_C
25_C
85_C
85_C
25_C
–55C
85C
40
30
20
10
G
ps
60
40
I
= 350 mA, f = 2500 MHz
Pulse Width = 100 sec
DQ
V
= 50 Vdc, I = 350 mA, f = 2500 MHz
DQ
Pulse Width = 100 sec, Duty Cycle = 20%
DD
20
Duty Cycle = 20%
0
15
0
0
1
2
3
4
5
6
0
20
40
60
80 100 120 140 160 180 200
P , INPUT POWER (WATTS) PEAK
in
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 15. Output Power versus Input Power (1)
Figure 16. Power Gain and Drain Efficiency
versus Output Power (1)
1. Circuit tuned for maximum power.
MMRF5014H
RF Device Data
NXP Semiconductors
14
PACKAGE DIMENSIONS
Pin 1. Drain
2. Gate
3. Source
MMRF5014H
RF Device Data
NXP Semiconductors
15
MMRF5014H
RF Device Data
NXP Semiconductors
16
PRODUCT DOCUMENTATION AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
May 2015
Sept. 2015
Initial Release of Data Sheet
Table 1, Maximum Ratings: added Maximum Forward Gate Current, p. 2
Table 4, Electrical Characteristics: changed Load Mismatch/Ruggedness signal type to pulse to reflect
correct modulation signal, p. 3
2
3
Apr. 2017
May 2018
Biasing sequence for GaN depletion mode transistors: revised note to clarify correct biasing sequence for
GaN parts, p. 3
500–2500 MHz wideband reference circuit: added performance data and graph, reference circuit
component layout and component designations, pp. 4–5
Table 2, Thermal Characteristics: updated to include R
(FEA) data, p. 2
CHC
MMRF5014H
RF Device Data
NXP Semiconductors
17
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Document Number: MMRF5014H
Rev. 3, 05/2018
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