935362678578 [NXP]
RF Power Field-Effect Transistor;
| 型号： | 935362678578 |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总21页 (文件大小：1643K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRFX1K80N
Rev. 0, 04/2018
NXP Semiconductors
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
MRFX1K80N
Enhancement--Mode Lateral MOSFETs
MRFX1K80GN
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design supports frequency use from 1.8 to
400 MHz.
1.8–400 MHz, 1800 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance
Frequency
(MHz)
V
DD
(V)
P
(W)
G
D
out
ps
Signal Type
(dB)
23.8
24.4
(%)
83.5
75.7
(1,2)
87.5–108
CW
60
65
1670 CW
1800 Peak
(3)
230
Pulse
OM--1230--4L
PLASTIC
(100 sec, 20% Duty Cycle)
MRFX1K80N
Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(3)
230
Pulse
> 65:1 at all
14 W Peak
(3 dB
65
No Device
Degradation
(100 sec, 20% Phase Angles
OM--1230G--4L
PLASTIC
Duty Cycle)
Overdrive)
MRFX1K80GN
1. Measured in 87.5–108 MHz broadband reference circuit (page 5).
2. The values shown are the center band performance numbers across the indicated
frequency range.
3. Measured in 230 MHz narrowband production test fixture (page 11).
Features
Unmatched input and output allowing wide frequency range utilization
Device can be used single--ended or in a push--pull configuration
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for extended power range
Lower thermal resistance package
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
Integrated ESD protection with greater negative gate--source voltage range for
improved Class C operation
Included in NXP product longevity program with assured supply for a minimum
of 15 years after launch
Drain A
Drain B
3
4
1
2
Gate A
Gate B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
– HF communications
– Radar
2018 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +179
–6.0, +10
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
T
J
C
Total Device Dissipation @ T = 25C
Derate above 25C
P
3333
16.7
W
W/C
C
D
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.06
C/W
JC
CW: Case Temperature 112C, 1800 W CW, 65 Vdc, I
= 150 mA, 98 MHz
DQ(A+B)
Thermal Impedance, Junction to Case
Z
0.009
C/W
JC
Pulse: Case Temperature 77C, 1800 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
65 Vdc, I = 100 mA, 230 MHz
DQ(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
2, passes 2500 V
C3, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Gate--Source Leakage Current
I
—
179
—
—
193
—
1
—
Adc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 100 mAdc)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
10
100
Adc
mAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
—
(V = 179 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(4)
Gate Threshold Voltage
(V = 10 Vdc, I = 740 Adc)
V
V
2.1
2.5
—
2.5
2.9
2.9
3.3
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 65 Vdc, I
= 100 mAdc, Measured in Functional Test)
DQ(A+B)
DD
(4)
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.76 Adc)
V
0.21
44.7
GS
D
(4)
Forward Transconductance
(V = 10 Vdc, I = 43 Adc)
g
—
—
fs
DS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 65 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
5.6
216
765
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 65 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 65 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) V = 65 Vdc, I
= 100 mA, P = 1800 W Peak
out
DD
DQ(A+B)
(360 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain
G
23.0
24.4
75.7
–16
26.0
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
71.0
—
IRL
–9
dB
Table 6. Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) I
= 100 mA
DQ(A+B)
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
No Device Degradation
DD
230
Pulse
> 65:1 at all
14 W Peak
65
(100 sec, 20% Duty Cycle)
Phase Angles
(3 dB Overdrive)
Table 7. Ordering Information
Device
Tape and Reel Information
Package
MRFX1K80NR5
OM--1230--4L
OM--1230G--4L
R5 Suffix = 50 Units, 56 mm Tape Width, 13--Reel
MRFX1K80GNR5
1. Each side of device measured separately.
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
2000
1000
1.08
1.06
V
= 65 Vdc
DD
500 mA
C
C
iss
I
= 100 mA
DQ(A+B)
1.04
1.02
1000 mA
1500 mA
oss
100
10
1
1
0.98
0.96
0.94
0.92
C
rss
Measured with 30 mV(rms)ac @ 1 MHz
V
= 0 Vdc
GS
0
10
20
30
40
50
60
70
–50
–25
0
25
50
75
100
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
T , CASE TEMPERATURE (C)
C
DS
Note: Each side of device measured separately.
I
(mA)
Slope (mV/C)
DQ
Figure 2. Capacitance versus Drain--Source Voltage
100
–3.14
500
1000
1500
–2.88
–2.75
–2.65
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
4
87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9 5.1 (7.3 cm 13.0 cm)
Table 8. 87.5–108 MHz Broadband Performance (In NXP Reference Circuit, 50 ohm system)
I
= 200 mA, P = 7 W, CW
DQ(A+B)
in
Frequency
(MHz)
V
P
(W)
G
D
DD
out
ps
(V)
60
60
60
(dB)
23.5
23.8
23.6
(%)
84.6
83.5
80.6
87.5
98
1580
1670
1600
108
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
5
87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9 5.1 (7.3 cm 13.0 cm)
D94850
C22
C21
C25
C26
C27
C6 C7
C28
C5
L4
R2
C20
C19
C18
C17
L1
L3
C11
C4
C16
Q1
C3
C1
R1
C24
C2
C23*
C15*
L2
R3
C14
C8
MRFE6VP61K25N
MRF1K50N
MRFX1K80N
C9 C10
Rev. 0
*C15 and C23 are mounted vertically.
Note: Component numbers C12 and C13 are not used.
0.34
(9)
0.45
(11)
0.22
(6)
Inches
(mm)
L3 total wire length = 1.7 (43 mm)
Figure 4. MRFX1K80N 87.5–108 MHz Broadband Reference Circuit Component Layout
Figure 5. MRFX1K80N 87.5–108 MHz Broadband Reference Circuit Component Layout – Bottom
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
6
Table 9. MRFX1K80N 87.5–108 MHz Broadband Reference Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3, C6, C9, C18, C19,
C20, C21, C22
1000 pF Chip Capacitor
ATC100B102JT50XT
ATC
C2
33 pF Chip Capacitor
ATC100B330JT500XT
ATC200B103KT50XT
ATC100B471JT200XT
MIN02-002EC101J-F
ATC100B120GT500XT
EEV-FC2A221M
ATC
ATC
ATC
CDE
ATC
C4, C5, C8
10,000 pF Chip Capacitor
470 pF Chip Capacitor
C7, C10, C15, C16, C17, C23
C11
100 pF, 300 V Mica Capacitor
12 pF Chip Capacitor
C14, C24
C25, C26, C27
C28
220 F, 100 V Electrolytic Capacitor
22 F, 35 V Electrolytic Capacitor
17.5 nH Inductor, 6 Turns
Panasonic--ECG
Nichicon
UUD1V220MCL1GS
B06TJLC
L1, L2
L3
Coilcraft
1.5 mm Non--Tarnish Silver Plated Copper Wire,
SP1500NT-001
Scientific Wire Company
Total Wire Length = 1.7/43 mm
L4
22 nH Inductor
1212VS-22NMEB
MRFX1K80N
Coilcraft
Q1
RF Power LDMOS Transistor
10 , 1/4 W Chip Resistor
33 , 2 W Chip Resistor
NXP
R1
CRCW120610R0JNEA
1-2176070-3
Vishay
R2, R3
Thermal Pad
PCB
TE Connectivity
t-Global Technology
MTL
TG Series Soft Thermal Conductive Pad
TG6050-150-150-5.0-0
D94850
Rogers TC350 0.030, = 3.5
r
Note: Refer to MRFX1K80N’s printed circuit boards and schematics to download the 87.5–108 MHz baseplate drawing.
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
7
TYPICAL CHARACTERISTICS – 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
27
26
90
85
D
80
25
24
G
ps
75
70
23
22
21
P
1700
1600
1500
1400
1300
out
20
19
18
V
= 60 Vdc, P = 7 W, l
= 200 mA
DQ(A+B)
DD
in
87 89
91 93 95
97 99 101 103 105 107 109
f, FREQUENCY (MHz)
Figure 6. Power Gain, Drain Efficiency and CW Output Power
versus Frequency at a Constant Input Power
1800
98 MHz
1600
1400
108 MHz
87.5 MHz
1200
1000
800
600
400
200
0
V
= 60 Vdc, I
= 200 mA
DD
DQ(A+B)
0
2
4
6
8
10
12
P
INPUT POWER (WATTS)
in,
Figure 7. CW Output Power versus Input Power and Frequency
34
32
30
28
26
24
22
20
90
80
70
60
50
40
30
20
D
f = 87.5 MHz
98 MHz
108 MHz
G
ps
87.5 MHz
98 MHz
108 MHz
V
= 60 Vdc, l
= 200 mA
DD
DQ(A+B)
0
200 400
600
800 1000 1200 1400 1600 1800
P
, OUTPUT POWER (WATTS)
out
Figure 8. Power Gain and Drain Efficiency versus
CW Output Power and Frequency
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
8
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Z = 5
o
f = 87.5 MHz
f = 108 MHz
f = 87.5 MHz
f = 108 MHz
Z
source
Z
load
f
Z
Z
load
source
MHz
87.5
98
1.65 + j3.30
1.91 + j3.25
1.94 + j2.87
3.90 + j4.73
3.88 + j3.99
3.35 + j3.95
108
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured
load
from drain to drain, balanced configuration.
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
Z
Z
source
load
Figure 9. Broadband Series Equivalent Source and Load Impedance – 87.5–108 MHz
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
9
HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
F1
H2
87.5 MHz
175 MHz –31 dB
Fundamental (F1)
H3 262.5 MHz –29 dB
H4
350 MHz –53 dB
H3
H4
H2
(262.5 MHz) (350 MHz)
(175 MHz)
–31 dB
–29 dB
–53 dB
H3
H2
H4
35 MHz
Span: 350 MHz
Center: 228.5 MHz
Figure 10. 87.5 MHz Harmonics @ 1500 W CW
MRFX1K80N MRFX1K80GN
10
RF Device Data
NXP Semiconductors
230 MHz NARROWBAND PRODUCTION TEST FIXTURE – 6.0 4.0 (15.2 cm 10.2 cm)
C26
C27
C28
C6
C9
C10
C12
D96894
C24
Coax1
Coax3
R1
L3
C17*
C18*
C2
L1
L2
C13 C14
C4*
C1
C19*
C20*
C21*
C22*
C15 C16
C3
C23
L4
R2
Coax4
Coax2
MRFX1K80N
Rev. 0
C25
Cꢀ11
C8
C7
C5
C29
C30
C31
aaa--029942
*C4, C17, C18, C19, C20, C21 and C22 are mounted vertically.
Figure 11. MRFX1K80N Narrowband Production Test Fixture Component Layout – 230 MHz
Table 10. MRFX1K80N Narrowband Production Test Fixture Component Designations and Values – 230 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3
C4
22 pF Chip Capacitor
ATC100B220JT500XT
ATC
27 pF Chip Capacitor
22 F, 35 V Tantalum Capacitor
0.1 F Chip Capacitor
220 nF Chip Capacitor
1000 pF Chip Capacitor
24 pF Chip Capacitor
20 pF Chip Capacitor
22 pF Chip Capacitor
ATC100B270JT500XT
T491X226K035AT
ATC
C5, C6
C7, C9
C8, C10
Kemet
AVX
CDR33BX104AKWS
C1812C224K5RACTU
ATC100B102JT50XT
ATC800R240JT500XT
ATC800R200JT500XT
ATC800R220JT500XT
ATC100B241JT200XT
ATC100B8R2CT500XT
MCGPR100V477M16X32-RH
Kemet
ATC
C11, C12, C24, C25
C13
ATC
C14, C15
C16
ATC
ATC
C17, C18, C19, C20, C21, C22 240 pF Chip Capacitor
C23 8.2 pF Chip Capacitor
C26, C27, C28, C29, C30, C31 470 F, 100 V Electrolytic Capacitor
ATC
ATC
Multicomp
Micro--Coax
Coilcraft
Coilcraft
Vishay
MTL
Coax1, 2, 3, 4
L1, L2
25 Semi Rigid Coax Cable, 2.2 Shield Length UT-141C-25
5 nH Inductor, 2 Turns
6.6 nH Inductor, 2 Turns
10 , 1/4 W Chip Resistor
A02TKLC
L3, L4
GA3093-ALC
CRCW120610R0JNEA
D96894
R1, R2
PCB
Rogers AD255A 0.030, = 2.55
r
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
11
TYPICAL CHARACTERISTICS — 230 MHz, TC = 25_C
NARROWBAND PRODUCTION TEST FIXTURE
2500
V
= 65 Vdc, f = 230 MHz
DD
Pulse Width = 100 sec, 20% Duty Cycle
2000
1500
1000
500
0
P
= 6.8 W
in
P
= 3.4 W
in
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 12. Output Power versus Gate--Source
Voltage at a Constant Input Power
66
63
60
57
54
51
48
27
90
80
70
60
50
40
30
20
10
V
= 65 Vdc, I
= 100 mA, f = 230 MHz
V
= 65 Vdc, f = 230 MHz
DD
DQ(A+B)
DD
Pulse Width = 100 sec, 20% Duty Cycle
Pulse Width = 100 sec, 20% Duty Cycle
26
25
24
23
22
I
= 900 mA
DQ(A+B)
600 mA
300 mA
D
100 mA
G
ps
900 mA
600 mA
21
20
19
300 mA
100 mA
28
30
32
34
36
38
40
42
100
1000
, OUTPUT POWER (WATTS) PEAK
3000
P , INPUT POWER (dBm) PEAK
P
in
out
f
Figure 14. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
P1dB
(W)
P3dB
(W)
(MHz)
230
1878
2143
Figure 13. Output Power versus Input Power
90
80
70
26
24
22
20
30
V
= 65 Vdc, I
= 100 mA, f = 230 MHz
DD
DQ(A+B)
–40_C
28 Pulse Width = 100 sec, 20% Duty Cycle
25_C
85_C
26
G
ps
65 V
24
22
20
18
16
14
60
50
40
30
20
10
60 V
T
= –40_C
C
55 V
50 V
25_C
18
16
85_C
40 V
D
I
= 100 mA, f = 230 MHz
DQ(A+B)
V
= 30 V
500
DD
Pulse Width = 100 sec, 20% Duty Cycle
1000 1500 2000 2500
, OUTPUT POWER (WATTS) PEAK
14
0
60
100
1000
, OUTPUT POWER (WATTS) PEAK
3000
P
P
out
out
Figure 16. Power Gain versus Output Power
and Drain--Source Voltage
Figure 15. Power Gain and Drain Efficiency
versus Output Power
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
12
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
Z
Z
load
source
MHz
230
0.9 + j2.3
1.9 + j2.5
Z
Z
= Test fixture impedance as measured from
gate to gate, balanced configuration.
source
= Test fixture impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
load
Z
Z
source
Figure 17. Narrowband Series Equivalent Source and Load Impedance – 230 MHz
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
13
PACKAGE DIMENSIONS
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
14
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
15
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
16
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
17
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
18
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
19
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Apr. 2018
Initial release of data sheet
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
20
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implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
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products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
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NXP and the NXP logo are trademarks of NXP B.V. All other product or service names
are the property of their respective owners.
E 2018 NXP B.V.
Document Number: MRFX1K80N
Rev. 0, 04/2018
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