935379914528 [NXP]
Narrow Band Medium Power Amplifier;
| 型号： | 935379914528 |
| 厂家： | 
NXP |
| 描述： | Narrow Band Medium Power Amplifier 射频 微波 |
| 文件： | 总13页 (文件大小：460K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A3I35D012WN
Rev. 0, 11/2018
NXP Semiconductors
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
A3I35D012WNR1
A3I35D012WGNR1
The A3I35D012WN wideband integrated circuit is designed for cellular base
station applications requiring very wide instantaneous bandwidth capability.
This circuit includes on--chip matching that makes it usable from 3200 to 4000
MHz. Its multi--stage structure is rated for 20 to 32 V operation and covers all
typical cellular base station modulation formats.
3200–4000 MHz, 1.8 W AVG., 28 V
AIRFAST RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
3500 MHz
Typical Single--Carrier W--CDMA Characterization Performance:
DD = 28 Vdc, IDQ1(A+B) = 36 mA, IDQ2(A+B) = 138 mA, Pout = 1.8 W Avg.,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
V
TO--270WB--17
PLASTIC
A3I35D012WNR1
G
PAE
(%)
ACPR
(dBc)
ps
Frequency
3400 MHz
3500 MHz
3600 MHz
3700 MHz
3800 MHz
(dB)
28.3
28.0
27.9
27.8
27.8
16.5
17.3
17.8
17.8
17.5
–45.2
–45.1
–44.8
–44.5
–44.7
TO--270WBG--17
PLASTIC
A3I35D012WGNR1
Features
Designed for wide instantaneous bandwidth applications
On--chip matching (50 ohm input, DC blocked)
Integrated quiescent current temperature compensation with
enable/disable function (2)
Designed for digital predistortion error correction systems
Optimized for Doherty applications
1. All data measured in fixture with device soldered to heatsink.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
2018 NXP B.V.
V
V
DS1A
VBW
17
16
A
(3)
V
1
2
3
4
5
6
7
8
9
10
11
12
VBW
DS1A
GS2A
A
V
V
RF
RF /V
out1 DS2A
inA
GS1A
RF
RF /V
out1 DS2A
inA
N.C.
N.C.
N.C.
N.C.
(2)
N.C.
15
14
GS1A
GS2A
Quiescent Current
Temperature Compensation
(1)
(1)
V
RF
inB
GS1B
GS2B
RF /V
out2 DS2B
V
V
V
V
V
GS1B
GS2B
Quiescent Current
Temperature Compensation
13
(3)
VBW
DS1B
B
(Top View)
RF
RF /V
out2 DS2B
inB
Note: Exposed backside of the package is
the source terminal for the transistor.
V
VBW
DS1B
B
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated
Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit
Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
2. Pin connections 14 and 16 are DC coupled
and RF independent.
3. Device can operate with V
current
DD
supplied through pin 13 and pin 17.
Table 1. Maximum Ratings
Rating
Symbol
Value
–0.5, +65
–0.5, +10
32, +0
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
V
Vdc
Vdc
Vdc
C
DSS
V
GS
DD
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
26
T
C
C
(4,5)
Operating Junction Temperature Range
T
J
C
Input Power
P
dBm
in
Table 2. Thermal Characteristics
Characteristic
(5,6)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
Case Temperature 71C, 1.8 W, 3600 MHz
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 36 mA
= 138 mA
7.7
2.9
DQ1(A+B)
DQ2(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C2A
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
4. Continuous use at maximum temperature will affect MTTF.
5. MTTF calculator available at http://www.nxp.com/RF/calculators.
6. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
5
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 1 -- On Characteristics
(1)
Gate Threshold Voltage
V
V
1.9
—
2.3
3.6
7.2
2.7
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V = 10 Vdc, I = 2 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I
= 36 mAdc)
DQ1(A+B)
DS
Fixture Gate Quiescent Voltage
V
6.0
8.0
(V = 28 Vdc, I
DD
= 36 mAdc, Measured in Functional Test)
DQ1(A+B)
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
(2)
I
—
—
—
—
—
—
10
5
Adc
Adc
Adc
DSS
DSS
GSS
DS
GS
(2)
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
I
DS
GS
(1)
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 2 -- On Characteristics
(1)
Gate Threshold Voltage
V
V
1.9
—
2.3
2.8
2.7
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V = 10 Vdc, I = 10 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I
= 138 mAdc)
DQ2(A+B)
DS
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 138 mAdc, Measured in Functional Test)
V
5.0
0.05
5.5
6.0
0.3
DD
DQ2(A+B)
(2)
Drain--Source On--Voltage
(V = 10 Vdc, I = 192 mAdc)
V
0.16
GS
D
1. Each side of device measured separately.
2. Side A and Side B are tied together for these measurements.
(continued)
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
3
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
= 36 mA, I = 138 mA,
DQ2(A+B)
Max
Unit
(1,2,3)
Functional Tests
(In NXP Production Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQ1(A+B)
P
= 1.8 W Avg., f = 3800 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
out
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
26.5
16.5
—
27.8
17.5
–44.7
16.5
30.5
—
dB
%
ps
Power Added Efficiency
PAE
ACPR
Adjacent Channel Power Ratio
–43.0
—
dBc
W
P
@ 3 dB Compression Point, CW
P3dB
14.8
out
Load Mismatch (In NXP Production Test Fixture, 50 ohm system) I
= 36 mA, I
= 138 mA, f = 3600 MHz
No Device Degradation
DQ1(A+B)
DQ2(A+B)
VSWR 10:1 at 32 Vdc, 10.7 W CW Output Power
(3 dB Input Overdrive from 8.7 W CW Rated Power)
(4)
Typical Performance
(In NXP Characterization Test Fixture, 50 ohm system) V = 28 Vdc, I
= 36 mA, I
= 138 mA,
DQ2(A+B)
DD
DQ1(A+B)
3400–3800 MHz Bandwidth
(5)
P
@ 3 dB Compression Point
P3dB
—
—
18.6
–11
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
the 3400–3800 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
860
—
MHz
%
res
(6)
Quiescent Current Accuracy over Temperature
I
QT
with 2.2 k Gate Feed Resistors (–40 to 85C) Stage 1
with 2.2 k Gate Feed Resistors (–40 to 85C) Stage 2
—
—
0.47
4.32
—
—
Gain Flatness in 400 MHz Bandwidth @ P = 1.8 W Avg.
G
—
—
0.2
—
—
dB
out
F
Gain Variation over Temperature
G
0.04
dB/C
(–40C to +85C)
Output Power Variation over Temperature
P1dB
—
0.008
—
dB/C
(–40C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
TO--270WB--17
TO--270WBG--17
A3I35D012WNR1
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
A3I35D012WGNR1
1. Second stage drains (V
and V
) must be tied together and powered by a single DC power supply.
DD2B
DD2A
2. Part internally input and output matched.
3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
4. All data measured in fixture with device soldered to heatsink.
5. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
6. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
4
V
GG2A
D99091
V
DD2A
V
GG1A
R1
V
DD1A
R2
C7
C8
Cꢀ11
C1
C2
C3
Rev. 3
C15
C12
C27
C23
C19
C20
C17
C33
C24
C25
C29
C30
R5
C31
C32
C21
C22
Z1
Q1
Z2
R6
C34
C18
C26
C14
C4
C5
C6
C28
C16
C13
C10
C9
R4
V
DD1B
R3
V
GG1B
V
DD2B
V
GG2B
aaa--032287
Note 1: All data measured in fixture with device soldered to heatsink. Production fixture does
not include device soldered to heatsink.
Note 2: Second stage drains (V
and V
) must be tied together and powered by a
DD2A
DD2B
single DC power supply.
Figure 3. A3I35D012WNR1 Characterization Test Circuit Component Layout — 3400–3800 MHz
Table 7. A3I35D012WNR1 Characterization Test Circuit Component Designations and Values — 3400–3800 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6, C7, C8, C9, C10,
C11, C12, C13, C14
10 F Chip Capacitor
C3225X7S1H106M250AB
TDK
C15, C16, C17, C18
10 nF Chip Capacitor
3.3 pF Chip Capacitor
C0805C103K5RAC
Kemet
ATC
C19, C20, C21, C22, C23, C24, C25,
C26, C27, C28
ATC600S3R3BT250XT
C29, C30
C31, C32
C33, C34
Q1
0.3 pF Chip Capacitor
ATC600S0R3BT250XT
ATC600S0R4BT250XT
ATC600S0R2BT250XT
A3I35D012WN
ATC
0.4 pF Chip Capacitor
ATC
0.2 pF Chip Capacitor
ATC
RF Power LDMOS Transistor
2.2 k 1/8 W Chip Resistor
50 , 8 W Termination Chip Resistor
3300–3800 MHz Band, 90, 3 dB Hybrid Coupler
NXP
R1, R2, R3, R4
R5, R6
CRCW08052K20JNEA
C8A50Z4B
Vishay
Anaren
Anaren
MTL
Z1, Z2
X3C35F1-03S
PCB
Taconic RF35A2, 0.020, = 3.50
D99091
r
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
5
PACKAGE DIMENSIONS
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
6
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
7
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
8
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
9
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
10
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
11
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2018
Initial release of data sheet
A3I35D012WNR1 A3I35D012WGNR1
RF Device Data
NXP Semiconductors
12
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us:
Home Page:
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Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address: nxp.com/SalesTermsandConditions.
NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service
names are the property of their respective owners.
E 2018 NXP B.V.
Document Number: A3I35D012WN
Rev. 0, 11/2018
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