ACT108-600E,126 [NXP]
ACT108-600E;
| 型号： | ACT108-600E,126 |
| 厂家： | 
NXP |
| 描述： | ACT108-600E 栅 三端双向交流开关 栅极 |
| 文件： | 总13页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACT108-600E
AC Thyristor power switch
Rev. 3 — 13 July 2010
Product data sheet
1. Product profile
1.1 General description
AC Thyristor power switch in a SOT54 plastic package with self-protective capabilities
against low and high energy transients
1.2 Features and benefits
Exclusive negative gate triggering
Full cycle AC conduction
Safe clamping of low energy
over-voltage transients
Self-protective turn-on during high
Remote gate separates the gate driver
energy voltage transients
from the effects of the load current
Very high noise immunity
1.3 Applications
Fan motor circuits
Pump motor circuits
Lower-power highly inductive, resistive
and safety loads
1.4 Quick reference data
Table 1.
Symbol
VDRM
Quick reference data
Parameter
Conditions
Min Typ Max Unit
repetitive peak
off-state voltage
-
-
600
V
IGT
gate trigger
current
VD = 12 V; IT = 100 mA;
LD+ G-; Tj = 25 °C;
see Figure 6
1
-
10
mA
VD = 12 V; IT = 100 mA;
LD- G-; Tj = 25 °C
1
-
-
-
10
0.8
-
mA
A
IT(RMS)
dVD/dt
VCL
RMS on-state
current
full sine wave; Tlead ≤ 71 °C;
see Figure 2
rate of rise of
off-state voltage
VDM = 402 V; Tj = 125 °C; gate
open circuit; see Figure 10
1000 -
V/µs
V
clamping voltage ICL = 100 µA; tp = 1 ms;
650
-
-
-
-
Tj ≤ 125 °C; see Figure 13
VPP
peak pulse
voltage
Tj = 25 °C; non-repetitive,
off-state; see Figure 1
-
-
2
kV
V
VT
on-state voltage
IT = 1.1 A; see Figure 9
1.3
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
CM
G
common
gate
LD
2
3
LD
load
G
CM
001aaj924
3 2 1
SOT54 (TO-92)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
ACT108-600E
TO-92
plastic single-ended leaded (through hole) package; 3 leads
SOT54
ACT108-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
2 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
Conditions
Min
Max
600
0.8
Unit
V
repetitive peak off-state voltage
RMS on-state current
-
-
IT(RMS)
full sine wave; Tlead ≤ 71 °C;
A
see Figure 2
ITSM
non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
-
-
8.8
8
A
A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; see Figure 3; see Figure 4
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs
t = 20 μs
-
0.32
100
1
A2s
A/µs
A
dIT/dt
IGM
rate of rise of on-state current
peak gate current
-
-
VGM
PG(AV)
Tstg
Tj
peak gate voltage
positive applied gate voltage
over any 20 ms period
-
15
V
average gate power
storage temperature
junction temperature
peak pulse voltage
-
0.1
150
125
2
W
-40
°C
°C
kV
-
-
VPP
Tj = 25 °C; non-repetitive, off-state;
see Figure 1
IEC 61000-4-5 Standards
Surge Generator
Open Circuit Voltage
1.2 μs/50 μs waveform
R
R
L
Gen
5 μH
2 Ω
150 Ω
R
G
DUT
Load Model
Surge pulse
220 Ω
003aad077
Fig 1. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
ACT108-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
3 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
003aac803
1.0
P
(W)
tot
α = 180°
α
0.8
α
0.6
0.4
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I
(A)
T(RMS)
α = conduction angle
Fig 2. Total power dissipation as a function of RMS on-state current; maximum values
003aac804
10
I
TSM
(A)
8
6
4
2
0
I
I
TSM
T
t
1/f
T
= 25 °C max
j(init)
2
3
1
10
10
10
number of cycles
f = 50 Hz
Fig 3. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
ACT108-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
4 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
003aac805
103
I
I
T
TSM
ITSM
(A)
t
t
p
102
T
j(init)
= 25 °C max
10
1
10−5
10−4
10−3
10−2
tp (s)
tp ≤ 20 ms
Fig 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
5. Thermal characteristics
Table 5.
Symbol
Rth(j-lead)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance
from junction to lead
full cycle with heatsink compound;
see Figure 5
-
-
60
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
full cycle; printed-circuit board mounted;
lead length 4 mm
-
150
-
K/W
003aad294
2
10
Z
th(j-lead)
(K/W)
10
1
P
−1
10
t
t
p
−2
10
−5
−4
−3
−2
10
−1
10
10
10
1
10
10
t
p
(s)
Fig 5. Transient thermal impedance from junction to lead as a function of pulse width
ACT108-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
5 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
6. Characteristics
Table 6.
Symbol
IGT
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
gate trigger current
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; see Figure 6
1
-
10
mA
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C
1
-
-
-
10
30
mA
mA
IL
latching current
VD = 12 V; IG = 12 mA; Tj = 25 °C;
see Figure 7
IH
holding current
VD = 12 V; Tj = 25 °C; see Figure 8
IT = 1.1 A; see Figure 9
-
9
-
-
-
-
-
-
25
1.3
-
mA
V
VT
VGT
on-state voltage
gate trigger voltage
-
VD = 12 V; IT = 100 mA; Tj ≤ 125 °C
VD = 12 V; IT = 100 mA; Tj = 25 °C
VD = 600 V; Tj ≤ 125 °C
0.15
V
-
1
V
ID
off-state current
-
0.2
2
mA
µA
V/µs
VD = 600 V; Tj ≤ 25 °C
-
dVD/dt
rate of rise of off-state VDM = 402 V; Tj = 125 °C; gate open
1000
-
voltage
circuit; see Figure 10
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A;
dVcom/dt = 15 V/µs; gate open circuit;
see Figure 11; see Figure 12
0.3
-
-
-
-
A/ms
V
VCL
clamping voltage
ICL = 100 µA; tp = 1 ms; Tj ≤ 125 °C;
650
see Figure 13
003aac811
003aac809
3
3
I
I
L
GT
(1)
(2)
I
I
L(25°C)
GT(25°C)
2
2
1
1
(2)
(1)
0
−50
0
−50
0
50
100
150
50
0
150
100
T (°C)
T (°C)
j
j
(1) LD+ G-
(2) LD- G-
Fig 6. Normalized gate trigger current as a function of
junction temperature
Fig 7. Normalized latching current as a function of
junction temperature
ACT108-600E
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
6 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
003aac810
003aac812
3
2.0
IT
(A)
I
H
I
H(25°C)
1.5
2
1.0
0.5
0.0
(1)
(2)
(3)
1
0
−50
0.0
0.5
1.0
1.5
2.0
0
50
100
150
VT (V)
T (°C)
j
VO = 0.758 V; RS = 0.263 Ω
(1)Tj = 125 °C; typical values
(2)Tj = 125 °C; maximum values
(3)Tj = 25 °C; maximum values
Fig 8. Normalized holding current as a function of
junction temperature
Fig 9. On-state current as a function of on-state
voltage
003aac813
003aac814
12
12
A
B
A
B
10
8
6
8
4
0
4
2
0
25
50
75
100
125
25
50
75
100
125
T (°C)
j
T (°C)
j
A is dVD/dt at condition Tj °C
B is dVD/dt at condition Tj 125 °C
A is dIcom/dt at condition Tj °C
B is dIcom/dt at condition Tj 125 °C
VD = 400 V
Fig 10. Normalized rate of rise of off-state voltage as a
function of junction temperature
Fig 11. Normalized critical rate of rise of commutating
current as a function of junction temperature
ACT108-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
7 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
003aac815
003aac817
1.2
2.0
A [B]
V
CL
A [spec]
V
CL(25°C)
1.5
1.0
0.5
0.8
0.4
0
0
−50
−1
2
10
1
10
10
0
50
100
150
B (V/μs)
T (°C)
j
A[B] is dIcom/dt at condition B, dVcom/dt
A[spec] is the specified data sheet value of dIcom/dt
turn-off time < 20 ms
Fig 12. Normalized critical rate of change of
commutating current as a function of critical
rate of change of commutating voltage;
minimum values
Fig 13. Normalized clamping voltage (upper limit) as a
function of junction temperature; minimum
values
ACT108-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
8 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
7. Package outline
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
PROJECTION
VERSION
IEC
JEDEC
JEITA
04-06-28
04-11-16
SOT54
TO-92
SC-43A
Fig 14. Package outline SOT54 (TO-92)
ACT108-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
9 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
ACT108-600E v.3
Modifications:
20100713
Product data sheet
-
ACT108-600E v.2
• Various changes to content.
20091021 Product data sheet
ACT108-600E v.2
-
-
ACT108-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
10 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
9. Legal information
9.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
9.2 Definitions
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in the
Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
ACT108-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
11 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
non-automotive qualified products in automotive equipment or applications.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
ACT108-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 July 2010
12 of 13
ACT108-600E
NXP Semiconductors
AC Thyristor power switch
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 July 2010
Document identifier: ACT108-600E
相关型号：
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