BAS116/T1 [NXP]
0.215A, 85V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, 3 PIN;
| 型号： | BAS116/T1 |
| 厂家： | 
NXP |
| 描述： | 0.215A, 85V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, 3 PIN 光电二极管 |
| 文件： | 总8页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS116
Low-leakage diode
Product specification
2003 Dec 12
Supersedes data of 1999 May 26
Philips Semiconductors
Product specification
Low-leakage diode
BAS116
FEATURES
PINNING
• Plastic SMD package
PIN
DESCRIPTION
• Low leakage current: typ. 3 pA
1
2
3
anode
• Switching time: typ. 0.8 µs
not connected
cathode
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
umns
2
1
APPLICATION
• Low leakage current applications in surface mounted
circuits.
2
n.c.
1
3
DESCRIPTION
3
MAM106
Top view
Epitaxial medium-speed switching diode with a low
leakage current in a small SOT23 plastic SMD package.
Marking code:
JVp = made in Hong Kong;
JVt = made in Malaysia;
JVW = Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
BAS116
−
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
−
−
−
−
85
V
75
V
IF
continuous forward current
see Fig.2; note 1
215
500
mA
mA
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward current
square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs
−
4
A
tp = 1 ms
−
1
A
tp = 1 s
−
0.5
250
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
mW
−65
−
+150 °C
150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
2
Philips Semiconductors
Product specification
Low-leakage diode
BAS116
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
TYP. MAX. UNIT
VF
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
−
−
−
−
0.9
1
V
V
V
V
1.1
1.25
IR
reverse current
VR = 75 V
0.003
3
5
nA
nA
pF
µs
VR = 75 V; Tj = 150 °C
80
−
Cd
trr
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
0.8
3
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-tp)
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
UNIT
330
500
K/W
K/W
Rth(j-a)
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
3
Philips Semiconductors
Product specification
Low-leakage diode
BAS116
GRAPHICAL DATA
MLB752 - 1
MLB755
300
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
200
200
(1)
(2)
(3)
100
100
0
0
0
0
100
200
o
0.4
0.8
1.2
1.6
T
( C)
amb
V
(V)
F
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Dec 12
4
Philips Semiconductors
Product specification
Low-leakage diode
BAS116
MBG526
mlb754
2
2
10
handbook, halfpage
I
R
(nA)
(1)
C
d
10
(pF)
1
1
−1
10
(2)
−2
−3
10
0
0
10
5
10
15
20
0
50
100
150
200
V
(V)
R
T (°C)
j
(1) Maximum values.
(2) Typical values.
VR = 75 V.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery time test circuit and waveforms.
2003 Dec 12
5
Philips Semiconductors
Product specification
Low-leakage diode
BAS116
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Dec 12
6
Philips Semiconductors
Product specification
Low-leakage diode
BAS116
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Dec 12
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp8
Date of release: 2003 Dec 12
Document order number: 9397 750 12391
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