BF1102_00 [NXP]
Dual N-channel dual gate MOS-FETs; 双N沟道双栅MOS - FET的
| 型号： | BF1102_00 |
| 厂家： | 
NXP |
| 描述： | Dual N-channel dual gate MOS-FETs |
| 文件： | 总16页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BF1102; BF1102R
Dual N-channel dual gate
MOS-FETs
Product specification
2000 Apr 11
Supersedes data of 1999 Jul 01
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
FEATURES
PINNING - SOT363
PIN
• Two low noise gain controlled amplifiers in a single
package
DESCRIPTION
BF1102
gate 1 (1)
gate 2 (1 and 2) source (1 and 2)
BF1102R
• Specially designed for 5 V applications
• Superior cross-modulation performance during AGC
• High forward transfer admittance
1
2
3
4
5
6
gate 1 (1)
drain (1)
drain (2)
drain (1)
drain (2)
• High forward transfer admittance to input capacitance
ratio.
source (1 and 2) gate 2 (1 and 2)
gate 1 (2)
gate 1 (2)
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF
applications such as television tuners and professional
communications equipment.
g
(1, 2)
handbook, halfpage
2
6
5
4
DESCRIPTION
g
(1)
(2)
AMP1
d (1)
d (2)
1
The BF1102 and BF1102R are both two equal dual gate
MOS-FETs which have a shared source pin and a shared
gate 2 pin. Both devices have interconnected source and
substrate; an internal bias circuit enables DC stabilization
and a very good cross-modulation performance at 5 V
supply voltage; integrated diodes between the gates and
source protect against excessive input voltage surges.
Both devices have a SOT363 micro-miniature plastic
package.
g
AMP2
1
1
BF1102 marking code: W1.
BF1102R marking code: W2-.
2
3
s (1, 2)
MBL029
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per MOS-FET unless otherwise specified
VDS
ID
drain-source voltage
−
−
7
V
drain current (DC)
−
−
40
200
−
mA
mW
mS
pF
Ptot
yfs
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Ts ≤ 102 °C; note 1
−
−
ID = 15 mA
ID = 15 mA
f = 1 MHz
36
−
43
2.8
30
2
Cig1-s
Crss
F
3.6
50
2.8
−
−
fF
f = 800 MHz
−
dB
Xmod
Tj
cross-modulation
input level for k = 1% at 40 dB AGC 100
−
dBµV
°C
operating junction temperature
−
−
150
Note
1. Ts is the temperature at the soldering point of the source lead.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Apr 11
2
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specified
VDS
ID
drain-source voltage
drain current (DC)
−
−
−
−
−
7
V
40
mA
mA
mA
mW
°C
IG1
IG2
Ptot
Tstg
Tj
gate 1 current
±10
±10
200
+150
150
gate 2 current
total power dissipation
storage temperature
operating junction temperature
Ts ≤ 102 °C
−65
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
240
K/W
MGS359
250
handbook, halfpage
P
tot
(mW)
200
150
100
50
0
0
50
100
150
200
T
(°C)
s
Fig.2 Power derating curve.
2000 Apr 11
3
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
Per MOS-FET unless otherwise specified
V(BR)DSS drain-source breakdown voltage
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VG1-S = VG2-S = 0; ID = 10 µA
7
−
V
V(BR)G1-SS gate 1-source breakdown voltage VGS = VDS = 0; IG1-S = 10 mA
V(BR)G2-SS gate 2-source breakdown voltage VGS = VDS = 0; IG2-S = 5 mA
6
15
15
1.5
1.5
1
V
6
V
V(F)S-G1
V(F)S-G2
VG1-S(th)
VG2-S(th)
IDSX
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
VDS = 5 V; VG1-S = 4 V; ID = 100 µA
0.5
0.5
0.3
0.3
V
V
V
1.2
20
50
20
V
VG2-S = 4 V; VDS = 5 V; RG = 120 kΩ; note 1 12
mA
nA
nA
IG1-S
gate 1 cut-off current
VG1-S = 5 V; VG2-S = VDS = 0
VG2-S = 5 V; VG1-S = VDS = 0
−
−
IG2-S
gate 2 cut-off current
Note
1. RG1 connects gate 1 to VGG = 5 V.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per MOS-FET unless otherwise specified (note 1)
yfs
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
Tj = 25 °C
36
2
43
2.8
−
50
3.6
7
mS
pF
pF
pF
fF
Cig1-ss
Cig2-ss
Coss
Crss
f = 1 MHz
f = 1 MHz; (note 2)
−
f = 1 MHz
−
1.6
30
2
2.5
50
2.8
reverse transfer capacitance
noise figure
f = 1 MHz
−
F
f = 800 MHz; YS = YS opt
fw = 50 MHz; funw = 60 MHz; (note 3)
input level for k = 1% at 0 dB AGC
input level for k = 1% at 40 dB AGC
−
dB
Xmod
cross-modulation
85
−
−
−
−
dBµV
dBµV
100
Notes
1. Not used MOS-FET: VG1-S = 0; VDS = 0.
2. Gate 2 capacitance of both MOS-FETs.
3. Measured in test circuit of Fig.20.
2000 Apr 11
4
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
ALL GRAPHS FOR ONE MOS-FET
MGS361
MGS360
30
30
handbook, halfpage
handbook, halfpage
V
= 4 V
3.5 V
G2-S
2.5 V
I
V
= 1.5 V
I
D
G1-S
D
(mA)
(mA)
3 V
2 V
1.4 V
20
20
1.3 V
1.2 V
1.5 V
10
10
1.1 V
1 V
1 V
2.0
0
0
0
2
4
6
8
10
(V)
0
0.4
0.8
1.2
1.6
2.4
V
V
(V)
DS
G1-S
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
Tj = 25 °C.
Fig.3 Transfer characteristics; typical values.
Fig.4 Output characteristics; typical values.
MGS362
MGS363
160
handbook, halfpage
50
handbook, halfpage
V
= 4 V
V
= 4 V
G2-S
G2-S
I
|y
|
G1
(µA)
fs
(mS)
40
3.5 V
3 V
3 V
3.5 V
120
30
20
10
0
80
40
2.5 V
2 V
2.5 V
2 V
0
0
0.5
1
1.5
2
2.5
(V)
0
10
20
30
I
(mA)
V
D
G1-S
VDS = 5 V.
VDS = 5 V.
Tj = 25 °C.
Tj = 25 °C.
Fig.5 Gate 1 current as a function of gate 1
voltage; typical values.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
2000 Apr 11
5
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
MGS364
MGS365
25
15
handbook, halfpage
handbook, halfpage
I
D
(mA)
I
D
(mA)
20
10
15
10
5
5
0
0
0
0
20
40
60
1
2
3
4
5
(V)
I
(µA)
G1
V
GG
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.20.
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig.7 Drain current as a function of gate 1 current;
typical values.
Fig.8 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
MGS366
MGS367
30
20
handbook, halfpage
68 kΩ
82 kΩ
R
= 47 kΩ
handbook, halfpage
G1
I
D
(mA)
V
= 5 V
4.5 V
4 V
I
G1-S
D
(mA)
100 kΩ
120 kΩ
16
20
3.5 V
3 V
150 kΩ
180 kΩ
220 kΩ
12
8
10
4
0
0
0
2
4
6
8
10
0
2
4
6
V
(V)
G2-S
V
= V
(V)
DS
GG
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.20.
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.20.
Fig.9 Drain current as a function of gate 1 (= VGG
and drain supply voltage; typical values.
)
Fig.10 Drain current as a function of gate 2
voltage; typical values.
2000 Apr 11
6
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
MGS368
MCD968
40
0
handbook, halfpage
handbook, halfpage
gain
I
reduction
(dB)
G1
(µA)
V
= 5 V
4.5 V
G1-S
−10
30
20
10
0
−20
−30
4 V
3.5 V
3 V
−40
−50
0
2
4
6
0
1
2
3
4
V
(V)
G2-S
V
(V)
AGC
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.20.
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb = 25 °C;
RG1 = 120 kΩ (connected to VGG); see Fig.20.
Fig.11 Gate 1 current as a function of gate 2
voltage; typical values.
Fig.12 Typical gain reduction as a function of the
AGC voltage; see Fig.20.
MGS369
MCD969
120
20
handbook, halfpage
handbook, halfpage
I
V
D
(mA)
16
unw
(dBµV)
110
12
8
100
90
4
0
80
0
20
40
60
0
10
20
30
40
50
gain reduction (dB)
gain reduction (dB)
VDS = 5 V; VGG = 5 V; fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C;
RG1 = 120 kΩ (connected to VGG); see Fig.20.
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb = 25 °C;
RG1 = 120 kΩ (connected to VGG); see Fig.20.
Fig.13 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values.
Fig.14 Drain current as a function of gain
reduction; typical values.
2000 Apr 11
7
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
MGS370
MCD970
3
2
3
10
10
−10
handbook, halfpage
handbook, halfpage
y
ϕ
y
is
rs
rs
(mS)
(deg)
(mS)
ϕ
rs
2
2
10
−10
10
y
rs
b
is
1
−10
−1
10
g
is
−1
10
1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
ID = 15 mA; Tamb = 25 °C.
Fig.15 Input admittance as a function of frequency;
typical values.
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values.
MGS372
MCD971
2
2
10
10
10
handbook, halfpage
handbook, halfpage
y
|y
|
os
−ϕ
|y
|
fs
(mS)
fs
(deg)
fs
(mS)
b
os
ϕ
fs
10
10
1
g
os
−1
1
3
10
1
10
2
3
2
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
ID = 15 mA; Tamb = 25 °C.
Fig.17 Forward transfer admittance and phase as
a function of frequency; typical values.
Fig.18 Output admittance as a function of
frequency; typical values.
2000 Apr 11
8
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
MCD972
0
handbook, halfpage
crosstalk
level
(dB)
−20
−40
−60
−80
0
200
400
600
800
1000
f (MHz)
Active amplifier: VDS = 5 V; VG2 = 4 V; ID = 15 mA.
Non-active amplifier: VDS = VG1-S = 0 V.
Source and load impedances: 50 Ω (both amplifiers).
Tamb = 25 °C.
Fig.19 Crosstalk as a function of frequency:
Output level of non-active amplifier related
to output level of active amplifier; typical
values.
V
AGC
R1
10 kΩ
C1
4.7 nF
C3
4.7 nF
R
50 Ω
L1
≈2.2 µH
L
C2
DUT
C4
4.7 nF
R
GEN
50 Ω
R2
50 Ω
R
G1
4.7 nF
V
V
V
I
GG
DS
MGS315
Fig.20 Cross-modulation test set-up (for one MOS-FET).
9
2000 Apr 11
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C
s11
s21
s12
s22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
50
100
200
300
400
500
600
700
800
900
1000
0.987
0.981
0.961
0.933
0.899
0.867
0.834
0.805
0.779
0.758
0.740
−5.6
4.069
4.042
3.926
3.778
3.593
3.412
3.216
3.010
2.804
2.656
2.509
173.5
167.0
154.4
142.4
130.6
119.6
109.2
99.0
0.001
0.002
0.005
0.006
0.007
0.007
0.007
0.006
0.007
0.007
0.009
95.4
81.3
75.8
69.6
65.6
64.4
67.5
78.7
92.7
120.7
125.5
0.986
0.983
0.976
0.960
0.945
0.928
0.914
0.901
0.886
0.889
0.890
−3.0
−6.0
−11.1
−21.9
−32.1
−42.0
−51.1
−59.9
−67.9
−75.7
−82.1
−89.0
−12.0
−17.7
−23.2
−29.1
−34.1
−39.8
−45.1
−49.7
−55.7
89.2
80.3
69.9
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C
Γopt
f
Fmin
(dB)
Rn
(Ω)
(MHz)
(ratio)
(deg)
61.61
800
2
0.621
25.85
2000 Apr 11
10
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
2000 Apr 11
11
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Apr 11
12
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
NOTES
2000 Apr 11
13
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
NOTES
2000 Apr 11
14
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
NOTES
2000 Apr 11
15
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Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603504/03/pp16
Date of release: 2000 Apr 11
Document order number: 9397 750 06919
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