BF1107 [NXP]
N-channel single gate MOS-FETs; N沟道单栅MOS - FET的
| 型号： | BF1107 |
| 厂家： | 
NXP |
| 描述： | N-channel single gate MOS-FETs |
| 文件： | 总8页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1107; BF1107W
N-channel single gate MOS-FETs
Product specification
1999 May 14
Supersedes data of 1998 Jun 22
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
FEATURES
• Currentless RF switch.
handbook, halfpage
3
APPLICATIONS
• Various RF switching applications such as:
- Passive loop through for VCR tuner
- Transceiver switching.
1
2
Top view
MSB003
Marking code: S3p.
DESCRIPTION
Fig.1 Simplified outline SOT23 (BF1107).
The BF1107 and BF1107W are depletion type field-effect
transistors in SOT23 and SOT323 packages respectively.
The low loss and high isolation capabilities of this
MOS-FET provide excellent RF switching functions.
Integrated diodes between gate and source and between
gate and drain protect against excessive input voltage
surges. Drain and source are interchangeable.
3
handbook, halfpage
PINNING
DESCRIPTION
PIN
1
2
BF1107
BF1107W
Top view
MAM062
1
2
3
drain
drain
Marking code: W3.
source
gate
source
gate
Fig.2 Simplified outline SOT323 (BF1107W).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
2
S21(on)
losses (on-state)
RS = RL = 50 Ω; f = 50 to 860 MHz
−
−
2.5
−
dB
dB
Ω
2
S21(off)
isolation (off-state)
30
−
−
RDSon
VGSoff
drain-source on-resistance
pinch-off voltage
VGS = 0; ID = 1 mA
12
−3
20
ID = 20 µA; VDS = 1 V
−
−4.5
V
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 May 14
2
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
VSD
VDG
VSG
ID
drain-source voltage
source-drain voltage
drain-gate voltage
source-gate voltage
drain current
−
−
−
−
−
3
3
7
7
V
V
V
V
10
mA
°C
Tstg
Tj
storage temperature
junction temperature
−65
+150
150
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point; note 1
260
K/W
Note
1. Soldering point of the gate lead.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)GSS
VGSoff
PARAMETER
CONDITIONS
VDS = 0; IGS = 0.1 mA
VDS = 1 V; ID = 20 µA
VGS = −5 V; VDS = 2 V
VGS = −5 V; VDS = 0
MIN.
TYP. MAX. UNIT
gate-source breakdown voltage
gate-source pinch-off voltage
drain-source leakage current
gate cut-off current
7
−
−
−
−
−
V
−3
−
−4.5
10
V
IDSX
µA
nA
IGSS
−
100
DYNAMIC CHARACTERISTICS
Common gate; Tamb = 25°C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
2
S21(on)
losses (on-state)
VSG = VDG = 0; RS = RL = 50 Ω;
f = 50 to 860 MHz
−
−
−
−
−
2.5
3.5
−
dB
dB
dB
dB
VSG = VDG = 0; RS = RL = 75 Ω;
−
f = 50 to 860 MHz
2
S21(off)
isolation (off-state)
VSG = VDG = 5 V; RS = RL = 50 Ω; 30
f = 50 to 860 MHz
VSG = VDG = 5 V; RS = RL = 75 Ω; 30
−
f = 50 to 860 MHz
RDSon
Cig
drain-source on-resistance
input capacitance
VGS = 0; ID = 1 mA
−
−
−
−
−
12
20
−
Ω
VSG = VDG = 5 V; f = 1 MHz
VSG = VDG = 0; f = 1 MHz
VSG = VDG = 5 V; f = 1 MHz
0.9
1.5
0.9
1.5
pF
pF
pF
pF
2
Cog
output capacitance
−
VSG = VDG = 0; f = 1 MHz
2
1999 May 14
3
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
MBK831
MBK832
0
0
handbook, halfpage
handbook, halfpage
2
2
S
S
21(on)
21(off)
(2)
(dB)
(dB)
−1
(1)
−20
−2
−3
−40
(2)
(1)
−4
−5
−60
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VSG = VDG = 0.
VSG = VDG = 5 V.
(1) RS = RL = 50 Ω.
(2) RS = RL = 75 Ω.
(1) RS = RL = 50 Ω.
(2) RS = RL = 75 Ω.
Fig.3 Losses (on-state) as a function of
frequency; typical values.
Fig.4 Isolation (off-state) as a function of
frequency; typical values.
MBK833
0
handbook, halfpage
RL
(dB)
−5
−10
−15
(1)
(2)
−20
−25
2
3
10
10
10
f (MHz)
VSG = VDG = 0.
(1) RS = RL = 50 Ω.
(2) RS = RL = 75 Ω.
Fig.5 Input and output return losses (on-state)
as function of frequency; typical values.
1999 May 14
4
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 May 14
5
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
1999 May 14
6
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 14
7
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© Philips Electronics N.V. 1999
SCA64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/00/03/pp8
Date of release: 1999 May 14
Document order number: 9397 750 05776
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NXP
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