BF547W [NXP]
NPN 1 GHz wideband transistor; NPN 1 GHz宽带晶体管
| 型号： | BF547W |
| 厂家： | 
NXP |
| 描述： | NPN 1 GHz wideband transistor |
| 文件： | 总12页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF547W
NPN 1 GHz wideband transistor
June 1994
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
FEATURES
DESCRIPTION
3
• Stable oscillator operation
• High current gain
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BF547W uses the same crystal as the
SOT23 version, BF547.
• Good thermal stability.
APPLICATIONS
PINNING
1
2
It is primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
PIN
DESCRIPTION
MBC870
Top view
1
2
3
base
Marking code: E2.
emitter
Fig.1 SOT323
collector
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
30
UNIT
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
open emitter
open base
−
−
−
−
−
−
−
−
V
20
V
50
mA
mW
Ptot
up to Ts = 63 °C; note 1
IC = 2 mA; VCE = 10 V
300
250
−
hFE
40
−
95
1
Cre
feedback capacitance
transition frequency
IC = 0; VCB = 10 V; f = 1 MHz
pF
fT
IC = 15 mA; VCE = 10 V;
f = 500 MHz
0.8
1.2
1.6
GHz
GUM
maximum unilateral power gain IC = 1 mA; VCE = 10 V;
−
20
−
dB
f = 100 MHz; Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
30
20
3
V
V
V
open base
open collector
50
mA
mW
°C
Ptot
Tstg
Tj
up to Ts = 63 °C; note 1
300
−65
+150
+150
−
°C
Note to the “Quick reference data” and “Limiting values”
1. Ts is the temperature at the soldering point of the collector pin.
June 1994
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts = 63 °C; note 1
290
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO collector-base breakdown
voltage
IC = 0.01 mA; IE = 0
−
−
−
−
30
V
V
V
V(BR)CEO collector-emitter breakdown
voltage
IC = 10 mA; IB = 0
20
V(BR)EBO emitter-base breakdown voltage IE = 0.01 mA; IC = 0
−
−
−
−
3
ICBO
hFE
Cre
fT
collector cut-off current
DC current gain
IE = 0; VCB = 10 V
100
250
−
nA
IC = 2 mA; VCE = 10 V
IC = 0; VCB = 10 V; f = 1 MHz
40
−
95
1
feedback capacitance
transition frequency
pF
IC = 15 mA; VCE = 10 V;
f = 500 MHz
0.8
1.2
1.6
GHz
GUM
maximum unilateral power gain; IC = 1 mA; VCE = 10 V;
note 1 f = 100 MHz; Tamb = 25 °C;
−
20
−
dB
Note
2
s21
------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming s12 is zero.GUM = 10 log
dB.
(1 – s11 2) (1 – s22
)
2
June 1994
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
MLB587
MBB397
400
140
handbook, halfpage
handbook, halfpage
P
tot
(mW)
h
FE
300
100
200
100
0
60
20
10
1
2
1
10
10
0
50
100
150
200
o
( C)
I
(mA)
C
T
s
VCE = 10 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MLB588
MLB589
2
1.4
handbook, halfpage
handbook, halfpage
C
re
(pF)
1.6
f
T
(GHz)
1
1.2
0.8
0.4
0
0.6
0.2
10
1
2
0
4
8
12
16
20
(V)
1
10
10
I
(mA)
C
V
CB
IC = 0; f = 1 MHz.
VCE = 10 V; f = 500 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5 Transition frequency as a function
of collector current; typical values.
June 1994
4
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
MLB590
MLB591
30
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
30
20
10
20
10
0
0
2
3
4
0
5
10
15
20
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 10 V; f = 100 MHz.
VCE = 10 V; IC = 15 mA.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of frequency;
typical values.
MLB592
MLB593
6
1
handbook, halfpage
handbook, halfpage
V
CE(sat)
(V)
F
(dB)
0.8
4
0.6
0.4
0.2
0
2
0
10
1
1
10
0
2
4
6
8
10
(mA)
I
(mA)
C
I
C
IC/IB = 10.
VCE = 10 V; ZS = ZL = 50 Ω; f = 100 MHz.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Minimum noise figure as a function of
collector current; typical values.
June 1994
5
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
0.2
5
2 GHz
1
0.2
0.5
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MLB594
1.0
o
90
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.10 Common emitter input reflection coefficient (s11); typical values.
o
90
o
o
135
45
40 MHz
2 GHz
o
o
180
0
25
20
15
10
5
o
o
135
45
o
MLB595
90
VCE = 10 V; IC = 15 mA.
Fig.11 Common emitter forward transmission coefficient (s21); typical values.
6
June 1994
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
o
90
o
o
135
45
2 GHz
0.5
0.4
0.3
0.2
0.1
40 MHz
o
o
180
0
o
o
135
45
o
MLB596
90
VCE = 10 V; IC = 15 mA.
Fig.12 Common emitter reverse transmission coefficient (s12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
2 GHz
0.5
2
o
o
45
135
1
MLB597
1.0
o
90
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.13 Common emitter output reflection coefficient (s22); typical values.
7
June 1994
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
SPICE parameters for the BF547W crystal
SEQUENCE No. PARAMETER
VALUE
UNIT
aA
SEQUENCE No. PARAMETER
VALUE
UNIT
1
IS
289.1
94.29
0.989
90.00
158.6
426.6
1.491
12.32
0.989
19.39
24.75
249.7
1.200
50.00
1.000
50.00
0.500
1.309
0.000
1.110
3.000
1.071
727.3
0.332
92.98
43.89
1.813
143.9
0.000
1.167
489.0
0.253
0.150
50.00
0.000
36(1)
37(1)
38
VJS
MJS
FC
750.0
0.000
0.950
mV
−
2
BF
−
3
NF
−
−
4
VAF
IKF
ISE
NE
V
Note
5
mA
aA
−
1. These parameters have not been extracted, the
default values are shown.
6
7
8
BR
−
C
handbook, halfpage
cb
9
NR
−
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
VAR
IKR
ISC
NC
V
mA
pA
−
L
B
L1
L2
B
B'
C'
C
E'
C
C
be
ce
RB
Ω
L
E
IRB
RBM
RE
µA
Ω
MBC964
L3
Ω
RC
Ω
E
XTB
EG
−
eV
−
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
XTI
CJE
VJE
MJE
TF
fc = scaling frequency = 100 MHz.
pF
mV
−
Fig.14 Package equivalent circuit SOT323.
ps
−
List of components (see Fig.14).
XTF
VTF
ITF
DESIGNATION
VALUE
UNIT
V
mA
deg
pF
mV
−
Cbe
Ccb
Cce
L1
2
fF
PTF
CJC
VJC
MJC
XCJC
TR
100
fF
100
fF
0.34
0.10
0.34
0.60
0.60
nH
nH
nH
nH
nH
L2
−
L3
ns
F
LB
CJS
LE
June 1994
8
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
PACKAGE OUTLINE
0.2
1.00
max
0.1
max
0.25
0.10
0.3
0.1
1.35
1.15
A
B
2
1
3
0.4
0.2
1.4
1.2
2.2
1.8
0.2
0.2
B
A
M
M
2.2
2.0
MBC871
Dimensions in mm.
Fig.15 SOT323.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
June 1994
9
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
NOTES
June 1994
10
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
NOTES
June 1994
11
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Date of release: June 1994
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Philips Semiconductors
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