BF991T/R [NXP]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, 4 PIN, FET RF Small Signal;
| 型号： | BF991T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, 4 PIN, FET RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF991
N-channel dual-gate MOS-FET
Rev. 03 — 20 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
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(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
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NXP Semiconductors
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF991
FEATURES
DESCRIPTION
• Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
APPLICATIONS
handbook, halfpage
d
• VHF applications such as:
4
3
2
– VHF television tuners and FM tuners
– Professional communication equipment.
g
2
g
1
PINNING
PIN
1
SYMBOL
DESCRIPTION
1
s,b
s, b
d
source
drain
Top view
Marking code: %MA.
MAM039
2
3
g2
g1
gate 2
gate 1
4
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
20
UNIT
VDS
ID
drain-source voltage
drain current
−
−
−
−
V
20
200
150
−
mA
mW
°C
Ptot
Tj
total power dissipation
junction temperature
transfer admittance
up to Tamb = 60 °C
Yfs
Cig1-s
Crs
F
f = 1 kHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 14
mS
pF
input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2.1
−
feedback capacitance
noise figure
f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 20
f = 200 MHz; GS = 2 mS; BS = BSopt
−
fF
;
1
2
dB
ID = 10 mA; VDS = 10 V; VG2-S = 4 V
Rev. 03 - 20 November 2007
2 of 7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF991
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
20
UNIT
−
−
−
−
−
−
V
ID
drain current (DC)
20
mA
mA
mA
mA
mW
°C
ID(AV)
IG1-S
IG2-S
Ptot
average drain current
gate 1-source current
gate 2-source current
total power dissipation
storage temperature
junction temperature
20
±10
±10
200
+150
150
up to Tamb = 60 °C; note 1
Tstg
−65
Tj
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
460
UNIT
Rth j-a
thermal resistance from junction to ambient in free air; note 1
K/W
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
MGE792
200
handbook, halfpage
P
tot
(mW)
100
0
0
100
200
T
(°C)
amb
Fig.2 Power derating curve.
Rev. 03 - 20 November 2007
3 of 7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF991
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
IG1-SS
PARAMETER
gate 1 cut-off current
gate 2 cut-off current
drain current
CONDITIONS
VG1-S = 5 V; VG2-S = VDS = 0
VG2-S = 5 V; VG1-S = VDS = 0
VDS = 10 V; VG1-S = 0; VG2-S = 4 V
MIN. MAX. UNIT
−
−
4
6
6
−
−
50
nA
nA
mA
V
IG2-SS
50
IDSS
25
V(BR)G1-SS
V(BR)G2-SS
V(P)G1-S
V(P)G2-S
gate 1-source breakdown voltage IG1-SS = 10 mA; VG2-S = VDS = 0
gate 2-source breakdown voltage IG2-SS = 10 mA; VG1-S = VDS = 0
20
20
V
gate 1-source cut-off voltage
gate 2-source cut-off voltage
ID = 20 µA; VDS = 10 V; VG2-S = 4 V
ID = 20 µA; VDS = 10 V; VG1-S = 0
−2.5
−2.5
V
V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS = 10 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
10
TYP. MAX. UNIT
Yfs
Cig1-s
Cig2-s
Crs
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
14
2.1
1
−
mS
pF
pF
fF
−
−
−
−
−
−
−
−
−
20
1.1
0.7
1
−
Cos
F
−
pF
dB
dB
dB
noise figure
f = 100 MHz; GS = 1 mS; BS = BSopt
f = 200 MHz; GS = 2 mS; BS = BSopt
1.7
2
Gtr
transducer gain; note 1
f = 100 MHz; GS = 1 mS; BS = BSopt
;
29
−
GL = 0.5 mS; BL = BLopt
f = 200 MHz; GS = 2 mS; BS = BSopt
GL = 0.5 mS; BL = BLopt
;
−
26
−
dB
Note
1. Crystal mounted in a SOT103 package.
Rev. 03 - 20 November 2007
4 of 7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF991
PACKAGE OUTLINE
3.0
2.8
0.150
B
1.9
0.090
A
B
M
0.75
0.2
A
0.60
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
See also Soldering recommendations.
Fig.3 SOT143.
Rev. 03 - 20 November 2007
5 of 7
BF991
NXP Semiconductors
N-channel dual-gate MOS-FET
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 03 - 20 November 2007
6 of 7
BF991
NXP Semiconductors
N-channel dual-gate MOS-FET
Revision history
Revision history
Document ID
BF991_N_3
Modifications:
BF991_2
Release date
20071120
Data sheet status
Change notice
Supersedes
Product data sheet
-
BF991_2
• Fig. 1 on page 2; Figure note changed
19910401
Product specification
-
-
BF991_SF_1
-
BF991_SF_1
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 November 2007
Document identifier: BF991_N_3
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