BFG198 [NXP]
NPN 8 GHz wideband transistor; NPN 8 GHz宽带晶体管
| 型号： | BFG198 |
| 厂家： | 
NXP |
| 描述： | NPN 8 GHz wideband transistor |
| 文件： | 总12页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG198
NPN 8 GHz wideband transistor
1995 Sep 12
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
DESCRIPTION
PINNING
PIN
NPN planar epitaxial transistor in a
plastic SOT223 envelope, intended
for wideband amplifier applications.
The device features a high gain and
excellent output voltage capabilities.
DESCRIPTION
emitter
base
age
4
1
2
3
4
emitter
collector
1
2
3
MSB002 - 1
Top view
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
VCBO
VCEO
IC
open emitter
open base
−
−
−
−
−
V
−
−
−
10
100
1
V
mA
W
Ptot
hFE
fT
up to Ts = 135 °C (note 1)
IC = 50 mA; VCE = 5 V; Tj = 25 °C
40
90
8
−
transition frequency
IC = 50 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
−
GHz
dB
GUM
maximum unilateral power IC = 50 mA; VCE = 8 V; f = 500 MHz;
gain
−
−
−
18
−
−
−
Tamb = 25 °C
IC = 50 mA; VCE = 8 V; f = 800 MHz;
amb = 25 °C
15
dB
T
Vo
output voltage
dim = −60 dB; IC = 70 mA; VCE = 8 V;
RL = 75 Ω; Tamb = 25 °C;
700
mV
f(p+q−r) = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
20
V
−
10
V
open collector
−
2.5
100
1
V
−
mA
W
°C
°C
Ptot
Tstg
Tj
up to Ts = 135 °C (note 1)
−
−65
−
+150
175
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-s
thermal resistance from junction to soldering point up to Ts = 135 °C (note 1)
40
K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 5 V
MIN.
TYP.
MAX.
UNIT
ICBO
hFE
Cc
−
−
100
nA
IC = 50 mA; VCE = 5 V
40
−
90
1.5
4
−
−
−
−
−
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 8 V; f = 1 MHz
pF
Ce
−
pF
Cre
fT
−
0.8
8
pF
IC = 50 mA; VCE = 8 V; f = 1 GHz;
−
GHz
Tamb = 25 °C
GUM
maximum unilateral power
gain; note 1
IC = 50 mA; VCE = 8 V; f = 500 MHz;
Tamb = 25 °C
−
−
18
15
−
−
dB
dB
IC = 50 mA; VCE = 8 V; f = 800 MHz;
Tamb = 25 °C
Vo
d2
output voltage
note 2
note 3
note 4
−
−
−
750
700
−55
−
−
−
mV
mV
dB
second order
intermodulation distortion
Note
2
s21
------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB.
(1 – s11 2) (1 – s22
)
2
2. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB;
Vq = Vo −6 dB; fp = 445.25 MHz;
Vr = Vo −6 dB; fq = 453.25 MHz; fr = 455.25 MHz
measured at f(p+q−r) = 443.25 MHz.
3. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
4. IC = 50 mA; VCE = 8 V; Vo = 50 dBmV;
f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
V
= 8 V
CC
C5
L4
L3
C4
V
BB
C3
C6
L6
L5
output
75
R1
R2
Ω
C1
L1
L2
input
75
DUT
Ω
C2
R3
R4
MBB754
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
VALUE
UNIT
pF
DIMENSIONS
CATALOGUE NO.
C2
multilayer ceramic capacitor
1.2
10
10
10
1.5
2222 851 12128
2222 590 08627
2222 851 12128
2222 629 08103
2222 851 12158
C1, C4, C6, C7 multilayer ceramic capacitor
nF
nF
nF
pF
C3
multilayer ceramic capacitor
multilayer ceramic capacitor
multilayer ceramic capacitor
1.5 turns 0.4 mm copper wire
C5 (note 1)
C8
L1 (note 1)
int. dia. 3 mm;
winding pitch 1 mm
L2
microstripline
75
Ω
length 22 mm;
width 2.5 mm
L3 (note 1)
L4 (note 1)
L5
0.4 mm copper wire
0.4 mm copper wire
microstripline
≈24
≈3.6
75
nH
nH
Ω
length 30 mm
length 4 mm
length 19 mm;
width 2.5 mm
L6
Ferroxcube choke
metal film resistor
metal film resistor
metal film resistor
5
µH
Ω
3122 108 20153
2322 180 73103
2322 180 73221
2322 180 73309
R1
10
220
30
R2 (note 1)
R3, R4
Ω
Ω
Note
1. Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2);
thickness 1⁄16 inch; thickness of copper sheet 2 x 35 µm; see Fig.2.
1995 Sep 12
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
V
V
CC
BB
C4
C6
R1
L6
R3
R4
L1
C2
C7
L4
75 Ω
input
75 Ω
output
L2
L5
C1
C3
C8
C5
R2
L3
MEA968
80 mm
60 mm
MEA966
80 mm
60 mm
mounting
screws
M 2.5 (8x)
MEA967
Fig.3 Intermodulation distortion and second order intermodulation distortion printed-circuit board.
1995 Sep 12
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
MBB752
MBB267
1.2
160
handbook, halfpage
handbook, halfpage
P
tot
(W)
h
1.0
0.8
0.6
0.4
0.2
FE
120
80
40
0
0
0
50
100
150
200
C)
40
80
120
o
T
(
I
(mA)
C
s
VCE = 5 V; Tj = 25 °C.
Fig.5 DC current gain as a function of collector
current.
Fig.4 Power derating curve.
MBB751
MBB499
10
1.2
handbook, halfpage
handbook, halfpage
f
T
C
(GHz)
re
8
6
(pF)
0.8
4
2
0
0.4
0
0
0
40
80
120
4
8
12
16
V
20
(V)
I
(mA)
C
CB
IE = 0; f = 1 MHz; Tj = 25 °C.
VCE = 8 V; f = 1 GHz; Tamb = 25 °C.
Fig.6 Feedback capacitance as a function of
collector-base voltage.
Fig.7 Transition frequency as a function of
collector current.
1995 Sep 12
6
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
MBB753
MBB498
40
45
handbook, halfpage
handbook, halfpage
d
im
(dB)
G
UM
(dB)
50
30
55
60
20
10
65
70
0
2
4
3
20
40
60
80
100
120
(mA)
10
10
10
10
f (MHz)
I
C
VCE = 8 V; Vo = 750 mV; Tamb = 25 °C;
f(p+q−r) = 443.25 MHz.
IC = 50 mA; VCE = 8 V; Tamb = 25 °C;
Fig.9 Intermodulation distortion as a function of
collector current.
Fig.8 Maximum gain as a function of frequency.
MBB266
MBB497
45
35
handbook, halfpage
handbook, halfpage
d
d
im
(dB)
2
(dB)
50
40
55
60
45
50
65
70
55
60
20
40
60
80
100
120
(mA)
20
40
60
80
100
120
(mA)
I
I
C
C
VCE = 8 V; Vo = 700 mV; Tamb = 25 °C;
(p+q) = 793.25 MHz.
VCE = 8 V; Vo = 50 dBmV; Tamb = 25 °C
f
f(p+q) = 450 MHz.
Fig.10 Intermodulation distortion as a function of
collector current.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1995 Sep 12
7
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
MBB268
35
handbook, halfpage
d
2
(dB)
40
45
50
55
60
20
40
60
80
100
120
(mA)
I
C
VCE = 8 V; Vo = 50 dBmV; Tamb = 25 °C
f(p+q) = 810 MHz.
Fig.12 Second order intermodulation distortion as
a function of collector current.
1995 Sep 12
8
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
50
25
100
2 GHz
10
250
+ j
10
25
50
100
250
0
∞
– j
40 MHz
250
10
100
25
MBB494
50
IC = 50 mA; VCE = 8 V; Tamb = 25 °C; Zo = 50 Ω.
Fig.13 Common emitter input reflection coefficient (S11).
o
90
o
o
60
120
o
o
150
30
40 MHz
ϕ
ϕ
100 80
60
40
20
o
o
0
180
2 GHz
o
o
30
150
o
o
60
120
o
MBB496
90
IC = 50 mA; VCE = 8 V; Tamb = 25 °C.
Fig.14 Common emitter forward transmission coefficient (S21).
9
1995 Sep 12
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
o
90
2 GHz
o
o
60
120
o
o
150
30
ϕ
ϕ
0.2 0.16 0.12 0.08 0.04
o
o
0
180
40 MHz
o
o
30
150
o
o
60
120
o
MBB495
90
IC = 50 mA; VCE = 8 V; Tamb = 25 °C.
Fig.15 Common emitter reverse transmission coefficient (S12).
50
25
100
10
250
2 GHz
+ j
– j
10
25
50
100
250
0
∞
250
40 MHz
10
100
25
MBB493
50
IC = 50 mA; VCE = 8 V; Tamb = 25 °C; Zo = 50 Ω.
Fig.16 Common emitter output reflection coefficient (S22).
10
1995 Sep 12
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
max
16
1
2
3
o
10
max
0.80
0.60
1.80
max
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.17 SOT223.
1995 Sep 12
11
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 12
12
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