BFG590/XTRL [NXP]
Si, NPN, RF SMALL SIGNAL TRANSISTOR;
| 型号： | BFG590/XTRL |
| 厂家： | 
NXP |
| 描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR 晶体 晶体管 |
| 文件： | 总12页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BFG590; BFG590/X
NPN 5 GHz wideband transistors
Product specification
1998 Oct 02
Supersedes data of 1995 Sep 19
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• Low noise figure
BFG590
BFG590/X
collector
• High transition frequency
• Gold metallization ensures excellent reliability.
1
2
3
4
collector
base
emitter
base
emitter
emitter
APPLICATIONS
emitter
• MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
4
3
2
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
1
Top view
MSB014
MARKING
TYPE NUMBER
CODE
BFG590
N38
N44
Fig.1 Simplified outline SOT143B.
BFG590/X
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
VCBO
VCEO
IC
open emitter
−
−
−
−
−
−
−
−
V
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
open base
15
200
400
280
−
V
mA
mW
Ptot
hFE
Cre
Ts ≤ 60 °C
IC = 35 mA; VCE = 8 V
IC = 0; VCE = 8 V; f = 1 MHz
IC = 80 mA; VCE = 4 V; f = 1 GHz
50
−
90
0.7
5
feedback capacitance
transition frequency
pF
fT
−
−
GHz
dB
GUM
maximum unilateral power gain IC = 80 mA; VCE = 4 V;
−
13
−
f = 900 MHz; Tamb = 25 °C
|S21|2
insertion power gain
IC = 80 mA; VCE = 4 V;
−
11
−
dB
f = 900 MHz; Tamb = 25 °C
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
V
V
V
open base
15
open collector
3
200
400
+150
175
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 60 °C; see Fig.2; note 1
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
290
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point
Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG249
600
handbook, halfpage
P
tot
(mW)
400
200
0
0
50
100
150
200
o
T ( C)
s
Fig.2 Power derating curve.
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0
PARAMETER
CONDITIONS
MIN.
20
TYP. MAX. UNIT
IC = 0.1 mA; IE = 0
−
−
V
15
3
−
−
V
V(BR)EBO emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
VCB = 10 V; IE = 0
−
−
V
ICBO
hFE
fT
collector-base leakage current
DC current gain
−
−
100
250
−
nA
IC = 70 mA; VCE = 8 V; see Fig.3 60
120
5
transition frequency
IC = 80 mA; VCE = 4 V;
f = 1 GHz; see Fig.5
−
−
−
−
−
GHz
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz;
see Fig.4
0.7
13
−
−
−
−
GUM
maximum unilateral power gain;
note 1
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
dB
IC = 80 mA; VCE = 4 V; f = 2 GHz;
Tamb = 25 °C
7.5
11
dB
|S21|2
insertion power gain
IC = 80 mA; VCE = 4 V;
dB
f = 900 MHz; Tamb = 25 °C
Note
2
S21
--------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB.
(1 – S11 2) (1 – S22
)
2
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
MLC057
MRA749
1.2
250
handbook, halfpage
handbook, halfpage
h
FE
C
re
(pF)
200
150
100
0.8
0.4
50
0
0
−2
−1
2
10
10
1
10
10
0
2
4
6
8
10
(V)
I
(mA)
C
V
CB
VCE = 8 V.
IC = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MLC058
8
handbook, halfpage
f
T
(GHz)
6
4
2
0
10
2
10
I
(mA)
C
VCE = 4 V; f = 1 GHz.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Oct 02
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
MLC059
MLC060
30
12
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
max
20
8
4
G
UM
G
max
G
UM
10
0
0
0
0
20
40
60
80
I
100
(mA)
20
40
60
80
I
C
100
(mA)
C
f = 900 MHz; VCE = 4 V.
f = 2 GHz; VCE = 4 V.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MLC061
MLC062
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
UM
40
30
20
10
0
40
30
20
10
0
G
UM
MSG
MSG
G
max
G
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 20 mA; VCE = 4 V.
IC = 80 mA; VCE = 4 V.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
1998 Oct 02
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
o
90
1.0
0.8
0.6
0.4
1
o
o
135
45
2
0.5
3 GHz
0.2
5
0.2
0.2
0.5
1
2
5
o
o
180
0
0
0
5
0.2
40 MHz
0.5
2
o
o
45
135
1
MGC882
1.0
o
90
IC = 80 mA; VCE = 4 V; Zo = 50 Ω.
Fig.10 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
135
45
40 MHz
3 GHz
o
o
180
0
50
40
30
20
10
o
o
135
45
o
MGC805
90
IC = 80 mA; VCE = 4 V.
Fig.11 Common emitter forward transmission coefficient (S21); typical values.
7
1998 Oct 02
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
o
90
3 GHz
o
o
135
45
40 MHz
o
o
180
0
0.25 0.20 0.15 0.10 0.05
o
o
135
45
o
MGC803
90
IC = 80 mA; VCE = 4 V.
Fig.12 Common emitter reverse transmission coefficient (S12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
3 GHz
1
2
5
o
o
180
0
0
5
0.2
40 MHz
0.5
2
o
o
45
135
1
MGC804
1.0
o
90
IC = 80 mA; VCE = 4 V; Zo = 50 Ω.
Fig.13 Common emitter output reflection coefficient (S22); typical values.
8
1998 Oct 02
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1998 Oct 02
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 02
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
NOTES
1998 Oct 02
11
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
125104/00/03/pp12
Date of release: 1998 Oct 02
Document order number: 9397 750 04346
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