BFG590W/X [NXP]
NPN 5 GHz wideband transistors; NPN 5 GHz宽带晶体管型号: | BFG590W/X |
厂家: | NXP |
描述: | NPN 5 GHz wideband transistors |
文件: | 总12页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
book, halfpage
BFG590W; BFG590W/X
NPN 5 GHz wideband transistors
1998 Oct 15
Product specification
Supersedes data of August 1995
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
FEATURES
DESCRIPTION
• High power gain
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
• Low noise figure
page
4
3
2
• High transition frequency
• Gold metallization ensures
excellent reliability.
PINNING
PIN
DESCRIPTION
1
APPLICATIONS
BFG590W
Top view
MBK523
•
MATV/CATV amplifiers and RF
communications subscriber
equipment in the GHz range
1
2
3
4
collector
base
emitter
emitter
Fig.1 SOT343N.
• Ideally suitable for use in class-A,
(A)B and C amplifiers with either
pulsed or continuous drive.
BFG590W/X
MARKING
1
2
3
4
collector
TYPE NUMBER
BFG590W
CODE
T1
emitter
base
emitter
BFG590W/X
T2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
collector-base voltage
open emitter
−
−
20
15
200
500
250
−
V
collector-emitter voltage open base
collector current (DC)
−
−
V
−
−
mA
mW
Ptot
hFE
Cre
total power dissipation
DC current gain
Ts ≤ 85 °C
−
−
IC = 70 mA; VCE = 8 V
60
−
90
0.7
5
feedback capacitance
transition frequency
IC = 0; VCB = 8 V; f = 1 MHz
pF
fT
IC = 80 mA; VCE = 4 V; f = 1 GHz; Tamb = 25 °C
−
−
GHz
dB
GUM
maximum unilateral
power gain
IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C −
13
−
|S21|2
insertion power gain
IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C −
11
−
dB
1998 Oct 15
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
V
V
V
open base
15
open collector
3
200
500
+150
175
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 85 °C; see Fig.2; note 1
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
180
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point
Ts ≤ 85 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P
tot
(mW)
400
200
0
0
50
100
150
200
o
T
( C)
s
Fig.2 Power derating curve.
1998 Oct 15
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IC = 0.1 mA; IE = 0
20
15
3
−
−
V
−
−
V
V(BR)EBO emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
−
−
V
ICBO
hFE
fT
collector leakage current
DC current gain
VCB = 10 V; IE = 0
−
−
100
250
−
nA
IC = 70 mA; VCE = 8 V
IC = 80 mA; VCE = 4 V; f = 1 GHz;
60
−
90
5
transition frequency
GHz
Tamb = 25 °C
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
−
0.7
13
−
−
pF
dB
GUM
maximum unilateral power gain;
note 1
IC = 80 mA; VCE = 4 V; f = 900 MHz;
Tamb = 25 °C
IC = 80 mA; VCE = 4 V; f = 2 GHz;
Tamb = 25 °C
−
−
−
7.5
11
−
−
−
dB
|S21|2
PL1
insertion power gain
IC = 80 mA; VCE = 4 V; f = 1 GHz;
Tamb = 25 °C
dB
output power at 1 dB gain
compression
IC = 80 mA; VCE = 5 V; f = 900 MHz;
21
dBm
RL = 50 Ω; Tamb = 25 °C
Note
2
S21
1. GUM is the maximum unilateral power gain, assuming S12 is zero.GUM = 10 log
dB.
--------------------------------------------------------------
(1 – S11 2) (1 – S22
)
2
1998 Oct 15
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
MRA749
MLC057
250
1.2
handbook, halfpage
handbook, halfpage
h
FE
C
re
(pF)
200
150
100
0.8
0.4
50
0
0
−2
−1
2
10
10
1
10
10
0
2
4
6
8
10
(V)
I
(mA)
C
V
CB
IC = 0; f = 1 MHz.
VCE = 8 V.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MLC058
8
handbook, halfpage
f
T
(GHz)
6
4
2
0
10
2
10
I
(mA)
C
VCE = 4 V; f = 1 GHz.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Oct 15
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
MLC059
MLC060
30
12
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
max
20
8
4
G
UM
G
max
G
UM
10
0
0
0
0
20
40
60
80
I
100
(mA)
20
40
60
80
I
C
100
(mA)
C
f = 900 MHz; VCE = 4 V.
f = 2 GHz; VCE = 4 V.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MLC061
MLC062
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
UM
40
30
20
10
0
40
30
20
10
0
G
UM
MSG
MSG
G
max
G
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 20 mA; VCE = 4 V.
IC = 80 mA; VCE = 4 V.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
1998 Oct 15
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
3 GHz
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
5
o
0.2
40 MHz
0.5
2
o
45
135
1
MLC063
1.0
o
90
IC = 80 mA; VCE = 4 V; Zo = 50 Ω.
Fig.10 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
135
45
40 MHz
3 GHz
o
o
180
0
50
40
30
20
10
o
o
135
45
o
MLC064
90
IC = 80 mA; VCE = 4 V.
Fig.11 Common emitter forward transmission coefficient (S21); typical values.
7
1998 Oct 15
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
o
90
3 GHz
o
o
135
45
0.5
0.4
0.3
0.2
0.1
40 MHz
o
o
180
0
o
o
135
45
o
MLC065
90
IC = 80 mA; VCE = 4 V.
Fig.12 Common emitter reverse transmission coefficient (S12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
3 GHz
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MLC066
1.0
o
90
IC = 80 mA; VCE = 4 V; Zo = 50 Ω.
Fig.13 Common emitter output reflection coefficient (S22); typical values.
8
1998 Oct 15
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
SPICE parameters for the BFG590W die
SEQUENCE No. PARAMETER VALUE
UNIT
mV
SEQUENCE No. PARAMETER VALUE
UNIT
36 (1)
37 (1)
38
VJS
MJS
FC
750.0
0.000
0.733
1
IS
1.341
123.5
0.988
75.85
9.656
232.2
2.134
10.22
1.016
1.992
294.1
211.0
0.997
5.000
1.000
5.000
1.275
920.6
0.000
1.110
3.000
3.821
600.0
0.348
13.60
71.73
10.28
1.929
0.000
1.409
219.4
0.166
0.150
2.340
0.000
fA
−
−
−
2
BF
3
NF
−
4
VAF
IKF
ISE
NE
V
Note
5
A
1. These parameters have not been extracted, the
default values are shown.
6
fA
−
7
8
BR
−
C
cb
handbook, halfpage
9
NR
−
10
11
12
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35 (1)
VAR
IKR
ISC
NC
V
mA
aA
−
L
B
L1
L2
B
B'
C'
C
E'
C
C
be
ce
RB
Ω
IRB
RBM
RE
µA
Ω
L
E
MBC964
Ω
L3
RC
mΩ
−
XTB
EG
E
eV
−
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
XTI
CJE
VJE
MJE
TF
pF
mV
−
Fig.14 Package equivalent circuit SOT343N.
ps
−
List of components (see Fig.14)
XTF
VTF
ITF
DESIGNATION
VALUE
UNIT
V
Cbe
Ccb
Cce
L1
70
fF
A
50
fF
PTF
CJC
VJC
MJC
XCJC
TR
deg
pF
mV
−
115
fF
0.34
0.10
0.25
0.40
0.40
nH
nH
nH
nH
nH
L2
−
L3
ns
F
LB
LE
CJS
1998 Oct 15
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT343N
D
B
E
A
X
H
y
v M
A
E
e
4
3
Q
A
A
1
c
1
2
b
1
b
p
w M B
L
p
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
1.15
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT343N
97-05-21
1998 Oct 15
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 15
11
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© Philips Electronics N.V. 1998
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Date of release: 1998 Oct 15
Document order number: 9397 750 04347
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