BFQ18A,115 [NXP]
BFQ18A - NPN 4 GHz wideband transistor SOT-89 3-Pin;
| 型号： | BFQ18A,115 |
| 厂家： | 
NXP |
| 描述： | BFQ18A - NPN 4 GHz wideband transistor SOT-89 3-Pin 放大器 晶体管 |
| 文件： | 总7页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFQ18A
NPN 4 GHz wideband transistor
Rev. 03 — 28 September 2007
Product data sheet
IMPORTANT NOTICE
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
DESCRIPTION
PINNING
PIN
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
DESCRIPTION
Code: FF
1
2
3
emitter
collector
base
3
2
1
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
CONDITIONS
open emitter
open base
TYP. MAX. UNIT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
−
−
−
−
4
25
18
150
1
V
V
mA
W
Ptot
up to Ts = 155 °C (note 1)
fT
IC = 100 mA; VCE = 10 V; f = 500 MHz;
−
GHz
Tj = 25 °C
Cre
dim
feedback capacitance
IC = 0; VCE = 10 V; f = 10.7 MHz
1.2
−
pF
dB
intermodulation distortion
IC = 80 mA; VCE = 10 V; RL = 75 Ω;
Vo = 700 mV; measured at
f(p+q-r) = 793.25 MHz
−
−60
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
open emitter
open base
−
−
−
−
−
25
18
2
V
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
V
open collector
V
150
1
mA
W
°C
°C
Ptot
Tstg
Tj
up to Ts = 155 °C (note 1)
−65 150
175
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
Rev. 03 - 28 September 2007
2 of 7
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 155 °C (note 1)
20 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
DC current gain
CONDITIONS
MIN.
25
TYP.
UNIT
hFE
Cc
Ce
Cre
fT
IC = 100 mA; VCE = 10 V
−
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 10.7 MHz
IC = 100 mA; VCE = 10 V; f = 500 MHz
−
−
−
−
−
2
pF
11
1.2
4
pF
pF
GHz
dB
dim
intermodulation distortion (see Fig.2) note 1
−60
Note
1. Ic = 80 mA; VCE = 10 V; RL = 75 Ω;
Vp = Vo = 700 mV; fp =795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz.
Rev. 03 - 28 September 2007
3 of 7
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
MBB361
120
handbook, halfpage
5 µH
handbook, halfpage
1.5 nF
2.2 nF
h
FE
V
BB
200 Ω
V
CC
80
40
5 µH
10 kΩ
10 nF
L1
4.7 nF
10 nF
DUT
2.2 nF
0.68
pF
R
L
0.68 pF
12 Ω
0
0
MBB829
40
80
120
160
(mA)
I
C
f = 40 − 860 MHz.
VCE = 10 V; Tj = 25 °C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3 DC current gain as a function of collector
current.
MBB357
8
handbook, halfpage
f
T
(GHz)
6
4
2
0
0
40
80
120
160
I
(mA)
C
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
Rev. 03 - 28 September 2007
4 of 7
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
B
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
SC-62
06-03-16
06-08-29
SOT89
TO-243
Rev. 03 - 28 September 2007
5 of 7
BFQ18A
NXP Semiconductors
NPN 4 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
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malfunction of a NXP Semiconductors product can reasonably be expected to
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Contact information
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Rev. 03 - 28 September 2007
6 of 7
BFQ18A
NXP Semiconductors
NPN 4 GHz wideband transistor
Revision history
Revision history
Document ID
BFQ18A_N_3
Modifications:
BFQ18A_CNV_2
Release date
20070928
Data sheet status
Change notice
Supersedes
Product data sheet
-
BFQ18A_CNV_2
• Fig. 1 and package outline updated
19950901 Product specification
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 September 2007
Document identifier: BFQ18A_N_3
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