BFR520/C,215 [NXP]
BFR520 - NPN 9 GHz wideband transistor TO-236 3-Pin;
| 型号： | BFR520/C,215 |
| 厂家： | 
NXP |
| 描述： | BFR520 - NPN 9 GHz wideband transistor TO-236 3-Pin |
| 文件： | 总14页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFR520
T23
SO
NPN 9 GHz wideband transistor
Rev. 4 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
1.2 Features and benefits
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
1.3 Applications
RF front end wideband applications in the GHz range
Analog and digital cellular telephones
Cordless telephones (CT1, CT2, DECT, etc.)
Radar detectors
Pagers and satellite TV tuners (SATV)
Repeater amplifiers in fiber-optic systems.
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
20
Unit
V
VCBO
VCES
collector-base voltage
-
-
-
-
collector-emitter
voltage
RBE = 0
15
V
IC
collector current (DC)
-
-
70
300
250
-
mA
[1]
Ptot
hFE
Cre
total power dissipation up to Tsp = 97 C
DC current gain IC = 20 mA; VCE = 6 V
-
-
mW
60
-
120
0.4
feedback capacitance IC = ic = 0 A; VCB = 6 V;
f = 1 MHz
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V;
f = 1 GHz
-
9
-
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V;
Tamb = 25 C
f = 900 MHz
f = 2 GHz
-
-
15
9
-
-
dB
dB
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
Table 1.
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
s212
insertion power gain
IC = 20 mA; VCE = 6 V;
Tamb = 25 C;
13
14
-
dB
f = 900 MHz
NF
noise figure
s = opt; Tamb = 25 C
IC = 5 mA; VCE = 6 V;
f = 900 MHz
-
-
-
1.1
1.6
1.9
1.6
2.1
-
dB
dB
dB
IC = 20 mA;VCE = 6 V;
f = 900 MHz
IC = 5 mA; VCE = 8 V;
f = 2 GHz
[1] Tsp is the temperature at the soldering point of the collector tab.
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Symbol
3
3
2
emitter
3
collector
1
1
2
2
sym021
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
BFR520
-
plastic surface mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking
Type number
Marking code[1]
BFR520
32*
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
BFR520
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
2 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCES
VEBO
IC
Parameter
Conditions
open emitter
RBE = 0
Min
Max
20
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
-
-
15
V
open collector
-
2.5
70
V
-
mA
mW
C
C
[1]
Ptot
up to Tsp = 97 C
-
300
150
175
Tstg
65
Tj
-
[1] Tsp is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
[1]
Rth(j-s)
thermal resistance from junction to soldering point
260 K/W
[1] Tsp is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 7.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
Unit
ICBO
collector cut-off IE = 0 A; VCB = 6 V
current
-
-
50
nA
hFE
Ce
DC current gain IC = 20 mA; VCE = 6 V
60
-
120
1
250
-
emitter
IC = ic = 0 A; VEB = 0.5 V;
f = 1 MHz
pF
capacitance
Cc
collector
capacitance
IE = ie = 0 A; VCB = 6 V;
f = 1 MHz
-
-
-
0.5
0.4
9
-
-
-
pF
Cre
fT
feedback
capacitance
IC = 0 A; VCB = 6 V;
f = 1 MHz
pF
transition
frequency
IC = 20 mA; VCE = 6 V;
f = 1 GHz
GHz
[1]
GUM
maximum
IC = 20 mA; VCE = 6 V;
unilateral power Tamb = 25 C
gain
f = 900 MHz
-
15
9
-
-
-
dB
dB
dB
f = 2 GHz
-
s212
insertion power IC = 20 mA; VCE = 6 V;
13
14
gain
Tamb = 25 C; f = 900 MHz
BFR520
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
3 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
Table 7.
Characteristics …continued
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
NF
noise figure
s = opt; VCE = 6 V;
Tamb = 25 C
IC = 5 mA; f = 900 MHz
IC = 20 mA; f = 900 MHz
IC = 5 mA; f = 2 GHz
-
-
-
-
1.1
1.6
1.9
17
1.6
2.1
-
dB
dB
dB
PL(1dB)
output power at IC = 20 mA; VCE = 6 V;
-
dBm
1 dB gain
RL = 50 ; Tamb = 25 C;
compression
f = 900 MHz
[2]
ITO
third order
-
26
-
dBm
intercept point
[1] GUM is the maximum unilateral power gain, assuming s12 is zero and
2
s
21
-----------------------------------------------------
G
= 10 log
dB.
UM
2
2
1 – s
1 – s
11
22
[2] IC = 20 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz
Measured at f(2pq) = 898 MHz and f(2qp) = 904 MHz.
mra702
mra703
250
400
P
tot
h
FE
(mW)
200
300
150
100
50
200
100
0
0
10
−2
−1
2
10
1
10
10
0
50
100
150
200
I
(mA)
T
(°C)
C
sp
VCE = 6 V.
Fig 1. Power derating curve.
Fig 2. DC current gain as a function of collector
current.
BFR520
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
4 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
mra704
mra705
0.6
12
C
re
f
T
V
= 6 V
3 V
CE
(pF)
(GHz)
0.4
8
0.2
4
0
0
10
−1
2
0
4
8
12
1
10
10
I (mA)
C
V
(V)
CB
IC = 0 A; f = 1 MHz.
Tamb = 25 C; f = 1 GHz.
Fig 3. Feedback capacitance as a function of
collector-base voltage.
Fig 4. Transition frequency as a function of collector
current.
mra707
mra706
25
25
gain
(dB)
gain
(dB)
20
15
20
MSG
G
max
G
UM
15
10
5
G
max
10
5
G
UM
0
0
0
10
20
30
0
10
20
30
I (mA)
C
I
C
(mA)
VCE = 6 V; f = 900 MHz.
VCE = 6 V; f = 2 GHz.
Fig 5. Gain as a function of collector current;
f = 900 MHz.
Fig 6. Gain as a function of collector current;
f = 2 GHz.
BFR520
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
5 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
mra708
mra709
50
50
gain
(dB)
40
gain
(dB)
G
UM
G
UM
40
MSG
MSG
30
20
10
0
30
20
10
0
G
G
max
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 6 V; IC = 5 mA.
VCE = 6 V; IC = 20 mA.
Fig 7. Gain as a function of frequency; IC = 5 mA.
Fig 8. Gain as a function of frequency; IC = 20 mA.
mra714
mra715
5
4
3
2
20
5
4
3
2
20
I (mA)
C
G
G
ass
F
F
ass
min
min
(dB)
15
(dB)
15
(dB)
(dB)
f (MHz)
5
20
900
1000
G
ass
G
ass
10
5
10
5
2000
2000
F
min
1000
900
500
20
5
F
min
0
0
1
0
1
0
−5
10
−5
10
2
2
3
4
1
10
10
10
I
(mA)
f (MHz)
C
VCE = 6 V.
VCE = 6 V.
Fig 9. Minimum noise figure and associated
available gain as functions of collector
current.
Fig 10. Minimum noise figure and associated
available gain as functions of frequency.
BFR520
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
6 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
stability
circle
90°
+1
1.0
0.8
135°
+0.2
45°
+2
+0.5
pot. unst.
region
0.6
0.4
F
= 1.1 dB
min
+5
−5
0.2
0
Γ
OPT
0
0.2
0.5
1
2
5
0°
180°
F = 1.5 dB
F = 2 dB
F = 3 dB
−0.2
−2
−0.5
−135°
−45°
−1
1.0
mra716
−90°
Zo = 50 ; VCE = 6 V; IC = 5 mA; f = 900 MHz.
Fig 11. Noise circle figure; f = 900 MHz.
90°
+1
1.0
0.8
0.6
0.4
0.2
0
135°
+0.2
45°
+0.5
+2
F = 3 dB
F = 2.5 dB
F = 2 dB
= 1. 9 dB
+5
F
min
Γ
MS
Γ
OPT
0
0.2
= 9.3 dB
0.5
1
2
5
0°
180°
G
max
G = 9 dB
−5
−0.2
G = 8 dB
G = 7 dB
−2
−0.5
−135°
−45°
−1
1.0
mra717
−90°
Zo = 50 ; VCE = 6 V; IC = 5 mA; f = 2000 MHz.
Fig 12. Noise circle figure; f = 2000 MHz.
BFR520
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
7 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
90°
+1
1.0
0.8
135°
+0.2
45°
+2
+0.5
0.6
0.4
+5
0.2
3 GHz
0
0.2
0.5
1
2
5
10
40 MHz
−5
0°
0
180°
−0.2
−2
−0.5
−135°
−45°
−1
1.0
mra710
−90°
VCE = 6 V; IC = 20 mA; Zo = 50 .
Fig 13. Common emitter input reflection coefficient (s11).
90°
135°
45°
40 MHz
3 GHz
180°
0°
50
40
30
20
10
0
−135°
−45°
mra711
−90°
VCE = 6 V; IC = 20 mA.
Fig 14. Common emitter forward transmission coefficient (s21).
BFR520
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
8 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
90°
135°
45°
3 GHz
40 MHz
180°
0°
0.5
0.4
0.3
0.2
0.1
0
−135°
−45°
mra712
−90°
VCE = 6 V; IC = 20 mA.
Fig 15. Common emitter reverse transmission coefficient (s12).
90°
+1
1.0
0.8
0.6
0.4
0.2
0
135°
+0.2
45°
+0.5
+2
+5
0
0.2
0.5
1
2
5
10
0°
180°
40 MHz
3 GHz
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
mra713
−90°
VCE = 6 V; IC = 20 mA; Zo = 50 .
Fig 16. Common emitter output reflection coefficient (s22).
BFR520
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
9 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
8. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
Fig 17. Package outline SOT23 (TO-236AB).
BFR520
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
10 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
9. Revision history
Table 8.
Revision history
Document ID
BFR520 v.4
Release date
Data sheet status
Change notice
Supersedes
20110913
Product data sheet
-
BFR520 v.3
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Package outline drawings have been updated to the latest version.
BFR520 v.3
20040901
Product data sheet
-
BFR520_CNV v.2
(9397 750 13397)
BFR520_CNV v.2
19971204
Product specification
-
-
BFR520
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
11 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
10.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
10.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BFR520
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
12 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BFR520
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
13 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
10.1
10.2
10.3
10.4
11
12
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 September 2011
Document identifier: BFR520
相关型号：
BFR520T/R
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal
NXP
BFR520TT/R
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP RF Small Signal
NXP
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