BFR520T [NXP]
NPN 9 GHz wideband transistor; NPN 9 GHz宽带晶体管型号: | BFR520T |
厂家: | NXP |
描述: | NPN 9 GHz wideband transistor |
文件: | 总12页 (文件大小:149K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR520T
NPN 9 GHz wideband transistor
Preliminary specification
1999 Oct 18
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• Low noise figure
Code: N2
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT416 (SC75) envelope.
1
2
3
base
emitter
collector
DESCRIPTION
NPN transistor in a plastic SOT416 (SC75) envelope.
3
handbook, halfpage
It is intended for wideband applications such as satellite
TV tuners, cellular phones, cordless phones, pagers etc.,
with signal frequencies up to 2 GHz.
1
2
MAM337
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
TYP. MAX. UNIT
VCBO
VCES
IC
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
−
−
20
15
70
300
250
−
V
RBE = 0
−
−
V
−
−
mA
mW
Ptot
hFE
fT
up to Ts = 118 °C; note 1
−
−
IC = 20 mA; VCE = 6 V; Tj = 25 °C
IC = 20 mA; VCE = 6 V; f = 1 GHz;
T
60
−
120
9
transition frequency
GHz
dB
amb = 25 °C
maximum unilateral power gain Ic = 20 mA; VCE = 6 V; f = 900 MHz;
amb = 25 °C
Ic = 5 mA; VCE = 6 V; f = 900 MHz;
amb = 25 °C
GUM
F
−
−
15
−
T
noise figure
1.1
1.6
dB
T
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCES
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
20
V
RBE = 0
15
V
open collector
2.5
70
V
mA
mW
°C
°C
Ptot
Tstg
Tj
up to Ts = 118 °C; note 1
300
150
175
−65
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Oct 18
2
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
THERMAL RESISTANCE
thermal resistance from junction to
soldering point
up to Ts = 118 °C; note 1
190 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C, unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCE = 6 V
MIN. TYP. MAX. UNIT
collector cut-off current
DC current gain
−
−
50
250
−
nA
hFE
Ce
Cc
Cre
fT
IC = 20mA; VCE = 6 V
60
−
120
1
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCB = 6 V; f = 1 MHz
pF
−
0.5
0.4
9
−
pF
−
−
pF
IC = 20 mA; VCE = 6 V; f = 1 GHz;
−
−
GHz
Tamb = 25 °C
GUM
maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz;
−
15
9
−
dB
(note 1)
T
amb = 25 °C
IC = 20 mA; VCE = 6 V; f = 2 GHz;
amb = 25 °C
IC = 20 mA; VCE = 6 V; f = 900 MHz;
amb = 25 °C
−
−
dB
T
S212
insertion power gain
noise figure
13
−
14
1.1
1.6
1.9
17
26
−
dB
T
F
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
1.6
2.1
−
dB
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
−
dB
PL1
output power at 1 dB gain
compression
Ic = 20 mA; VCE = 6 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
−
dBm
dBm
ITO
third order intercept point
note 2
−
−
Notes
1.
G
UM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
GUM = 10 log ---------------------------------------------------------- dB.
2
(1 – S11 2)(1 – S22
)
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz.
1999 Oct 18
3
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
MRC030 - 1
MRC028
200
400
handbook, halfpage
handbook, halfpage
P
tot
h
FE
(mW)
300
150
100
50
200
100
0
0
10
−2
−1
2
0
50
100
150
200
10
1
10
10
o
T ( C)
s
I
(mA)
C
VCE = 6 V; Tj = 25 °C.
Fig.2 Power derating curve.
Fig.3 DC current gain as a function of collector
current.
MRC021
MRC022
12
0.7
handbook, halfpage
re
(pF)
handbook, halfpage
f
C
T
(GHz)
0.6
0.5
0.4
0.3
0.2
0.1
0
10
V
= 8 V
3 V
CE
8
6
4
2
0
1
10
100
0
2
4
6
8
V
10
(V)
I
(mA)
C
CB
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
1999 Oct 18
4
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC026
25
handbook, halfpage
gain
(dB)
MRC027
20
handbook, halfpage
G
UM
20
15
10
5
(dB)
MSG
18
16
14
12
10
G
G
max
UM
V
= 6 V
3 V
CE
0
0
10
20
30
I
(mA)
C
0
10
20
30
I
(mA)
C
VCE = 6 V; f = 2 GHz; Tamb = 25 °C.
VCE = 6 V; f = 900 MHz; Tamb = 25 °C.
Fig.6 Maximum unilateral power gain as a
function of collector current.
Fig.7 Gain as a function of collector current.
MRC024
MRC025
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
40
30
20
10
0
UM
40
30
20
10
0
G
UM
MSG
MSG
G
max
G
max
−2
−1
10
10
1
10
f (GHz)
−2
−1
10
10
1
10
f (GHz)
IC = 5 mA; VCE = 6 V; Tamb = 25 °C.
IC = 20 mA; VCE = 6 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
1999 Oct 18
5
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
MRC029
MRC023
4
4
handbook, halfpage
handbook, halfpage
F
F
(dB)
(dB)
3
2
1
0
3
I
= 20 mA
5 mA
C
f = 2 GHz
2
900 MHz
500 MHz
1
0
2
−1
1
10
10
10
1
10
I
(mA)
f (GHz)
C
VCE = 6 V; Tamb = 25 °C.
VCE = 6 V; Tamb = 25 °C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
1999 Oct 18
6
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
stability
circle
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
pot. unst.
region
0.2
5
F
1
= 1. 1 dB
min
Γ
OPT
0.2
0.5
2
5
180°
0°
0
F = 1.5 dB
F = 2 dB
F = 3 dB
5
0.2
0.5
2
−45°
−135°
1
MRC077
1.0
−90°
IC = 5 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 Ω.
Fig.12 Noise circle.
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
F = 3 dB
F = 2.5 dB
0.2
5
F = 2 dB
= 1. 9 dB
F
min
0.2
0.5
1
2
5
180°
0°
0
Γ
OPT
Γ
MS
G = 8,5 dB
G = 8 dB
5
0.2
G
= 9.1 dB
max
G = 7 dB
0.5
2
−45°
−135°
1
MRC078
1.0
−90°
IC = 5 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 Ω.
Fig.13 Noise circle.
1999 Oct 18
7
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
3 GHz
0.2
0.5
1
2
5
180°
0°
0
40 MHz
5
0.2
0.5
2
−45°
−135°
1
MRC066
1.0
−90°
IC = 20 mA; VCE = 6 V;
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
90°
135°
45°
40 MHz
40
3 GHz
180°
0°
50
30
20
10
−135°
−45°
MRC067
−90°
IC = 20 mA; VCE = 6 V.
Fig.15 Common emitter forward transmission coefficient (S21).
1999 Oct 18
8
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
90°
135°
45°
3 GHz
40 MHz
180°
0°
0.5
0.4
0.3
0.2
0.1
−135°
−45°
MRC060
−90°
IC = 20 mA; VCE = 6 V.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
0.2
0.5
1
2
5
180°
0°
0
40 MHz
5
3 GHz
0.2
0.5
2
−45°
−135°
1
MRC061
1.0
IC = 20 mA; VCE = 6 V;
Zo = 50 Ω.
−90°
Fig.17 Common emitter output reflection coefficient (S22).
1999 Oct 18
9
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
b
w
M
B
1
p
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
1
A
UNIT
b
c
D
E
e
e
H
L
p
Q
v
w
p
1
E
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
0.1
1
0.5
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT416
SC-75
1999 Oct 18
10
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Oct 18
11
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68
SCA
© Philips Electronics N.V.
1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The NetherlandsV
budgetnum/ed/pp12
Date of release: 1999 Oct 18
Document order number: 9397 750 06524
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