BFU510 [NXP]
NPN SiGe wideband transistor; NPN硅锗宽带晶体管
| 型号： | BFU510 |
| 厂家： | 
NXP |
| 描述： | NPN SiGe wideband transistor |
| 文件： | 总16页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFU510
NPN SiGe wideband transistor
Product specification
2003 Jun 12
Supersedes data of 2001 Nov 08
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
FEATURES
PINNING
PIN
• Very high power gain
• Very low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance
• 45 GHz SiGe process.
DESCRIPTION
1
2
3
4
emitter
base
emitter
collector
APPLICATIONS
• RF front end
3
4
handbook, halfpage
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
2
1
• Satellite television tuners (SATV)
• High frequency oscillators.
Top view
MSB842
Marking code: A5.
DESCRIPTION
Fig.1 Simplified outline SOT343R.
NPN SiGe wideband transistor for low voltage applications
in a plastic, 4-pin dual-emitter SOT343R package.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
collector-base voltage
open emitter
−
−
9
V
collector-emitter voltage open base
collector current (DC)
−
−
2.3
15
35
210
−
V
−
10
−
mA
mW
Ptot
total power dissipation
DC current gain
Ts ≤ 115 °C
−
hFE
IC = 10 mA; VCE = 2 V; Tj = 25 °C
70
−
140
23
1
Gmax
NF
maximum power gain
noise figure
IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C
IC = 0.5 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt
dB
dB
−
−
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Jun 12
2
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
−
−
−
−
−
9
V
V
V
open base
2.3
2.5
15
open collector
collector current (DC)
total power dissipation
storage temperature
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 115 °C; note 1; see Fig.2
35
−65
+150
150
operating junction temperature
−
°C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
1000
K/W
MLE136
60
handbook, halfpage
P
tot
(mW)
40
20
0
0
40
80
120
160
T
(°C)
s
Fig.2 Power derating curve.
2003 Jun 12
3
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IC = 2.5 µA; IE = 0
9
−
−
V
2.3
2.5
−
−
−
V
V(BR)EBO emitter-base breakdown voltage
IE = 2.5 µA; IC = 0
−
−
V
ICBO
hFE
Cc
collector-base leakage current
DC current gain
IE = 0; VCB = 4.5 V
−
15
210
−
nA
IC = 10 mA; VCE = 2 V
IE = ie = 0; VCB = 2 V; f = 1 MHz
IC = 0; VCB = 2 V; f = 1 MHz
70
−
140
150
25
23
collector capacitance
fF
Cre
feedback capacitance
maximum power gain; note 1
−
−
fF
Gmax
IC = 10 mA; VCE = 2 V; f = 2 GHz;
−
−
dB
Tamb = 25 °C
NF
noise figure
IC = 0.5 mA; VCE = 2 V; f = 2 GHz;
ΓS = Γopt
−
−
−
1
2
7
−
−
−
dB
PL1
ITO
output power at 1 dB gain
compression
IC = 5 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS opt; ZL = ZL opt; note 2
dBm
dBm
third order intercept point
IC = 10 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS opt; ZL = ZL opt; note 2
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG.
2. ZS and ZL are optimized for gain.
2003 Jun 12
4
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
MLE137
MLE138
250
16
handbook, halfpage
handbook, halfpage
h
I
FE
C
(1)
(2)
(3)
(mA)
200
150
100
50
12
(4)
(5)
(6)
8
4
(7)
(8)
(9)
0
0
0
0
5
10
15
1
2
3
I
(mA)
V
(V)
C
CE
(1) IB = 180 µA.
(2) IB = 160 µA.
(3) IB = 140 µA.
(4) IB = 120 µA.
(5) IB = 100 µA.
(6) IB = 80 µA.
(7) IB = 60 µA.
(8) IB = 40 µA.
(9) IB = 20 µA.
VCE = 2 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Output characteristics; typical values.
MLE139
MLE140
40
40
handbook, halfpage
handbook, halfpage
f
gain
(dB)
T
(GHz)
30
20
10
0
30
MSG
20
10
0
G
max
s
21
2
3
4
1
10
10
10
10
f (MHz)
I
(mA)
C
VCB = 1 V; f = 2 GHz; Tamb = 25 °C.
IC = 10 mA; VCE = 2 V; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
Fig.6 Gain as a function of frequency; typical
values.
2003 Jun 12
5
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
MLE141
MLE142
50
8
handbook, halfpage
handbook, halfpage
C
re
(fF)
ITO
(dBm)
40
4
0
30
20
10
0
−4
1
10
0
0.5
1
1.5
2
I
(mA)
V
(V)
C
CB
IC = 0; f = 1 MHz; Tamb = 25 °C.
VCE = 2 V; f = 2 GHz.
Fig.7 Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.8 Third order intercept point as a function of
collector current; typical values.
MLE143
4
handbook, halfpage
P
L 1dB
(dBm)
2
0
−2
−4
1
10
I
(mA)
C
VCE = 2 V; f = 2 GHz; source and load tuned for optimum gain.
Fig.9 Output power at 1 dB gain compression as
a function of collector current.
2003 Jun 12
6
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
90°
+1
1.0
0.8
0.6
0.4
0.2
0
10 GHz
135°
+0.5
45°
+2
10 GHz
+0.2
+5
0.2
0.5
2
5
180°
0
0°
5 GHz
10 mA
1 GHz
1 mA
1 GHz
−0.2
2.5 GHz
5 GHz
2.5 GHz
−2
−0.5
−45°
−135°
−1
MLE144
1.0
−90°
IC = 1 mA and 10 mA; VCE = 2 V; Zo = 50 Ω.
Fig.10 Common emitter input reflection coefficient (s11).
90°
135°
45°
1 GHz
10 mA
8
1 GHz
4 2
10
6
180°
0°
1 mA
10 GHz
−135°
−45°
MLE145
−90°
IC = 1 mA and 10 mA; VCE = 2 V; Zo = 50 Ω.
Fig.11 Common emitter forward transmission coefficient (s21).
7
2003 Jun 12
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
90°
135°
45°
1 GHz
1 GHz
10 mA
0.25 0.2 0.15 0.1 0.05
180°
0°
1 mA
10 GHz
−135°
−45°
MLE146
−90°
IC = 1 mA and 10 mA; VCE = 2 V; Zo = 50 Ω.
Fig.12 Common emitter reverse transmission coefficient (s12).
90°
+1
1.0
0.8
0.6
0.4
0.2
0
135°
+0.2
45°
+2
+0.5
+5
10 GHz
10 GHz
0.2
0.5
2
5
180°
0
0°
1 GHz
10 mA
1 GHz
2.5 GHz
−5
−0.2
5 GHz
5 GHz
2.5 GHz
1 mA
−0.5
−2
−45°
−135°
−1
−90°
MLE147
1.0
IC = 1 mA and 10 mA; VCE = 2 V; Zo = 50 Ω.
Fig.13 Common emitter output reflection coefficient (s22).
8
2003 Jun 12
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
MLE149
MLE148
3
4
handbook, halfpage
handbook, halfpage
NF
min
NF
min
(dB)
(dB)
f = 5 GHz
3
2
f = 2 GHz
2
1
1
0
0
0
2
4
6
0
2
4
6
8
10
(mA)
f (GHz)
I
C
VCE = 2 V; Tamb = 25 °C.
IC = 0.5 mA; VCE = 2 V; Tamb = 25 °C.
Fig.14 Minimum noise figure as a function of
collector current.
Fig.15 Minimum noise figure as a function of
frequency.
Noise data: VCE = 2 V; IC = 1 mA; Tamb = 25 °C; typical values
Γopt
f
Fmin
(dB)
rn
(Ω)
(GHz)
(mag)
(deg)
2
3
1.2
1.5
1.9
2.2
2.5
2.7
3.0
3.2
3.3
3.4
3.5
0.79
0.72
0.60
0.55
0.43
0.30
0.27
0.27
0.33
0.43
0.46
36.5
57.9
1.07
0.84
0.60
0.36
0.22
0.18
0.23
0.42
0.71
0.96
1.25
4
81.2
5
103.7
133.7
168.3
−152.7
−103.2
−62.8
−38.5
−16.0
6
7
8
9
10
11
12
2003 Jun 12
9
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
SPICE parameters for the BFU510 die
SEQUENCE No. PARAMETER
VALUE
UNIT
aA
1
IS
0.277
270
1.06077
45
L
L
handbook, halfpage
B
B'
C'
C
b
c
2
BF
−
E'
3
NF
−
C
C
R
be
cs
cs
4
VAF
IKF
ISE
NE
V
C
C
be2
ce
5
11.1
265
2.9
mA
fA
−
L
e
6
7
MLE150
8
BR
50
−
E
9
NR
1.01
1
−
10
11
12
13
14
15 (1)
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
VAR
IKR
ISC
NC
MV
A
0.001
0.4
Fig.16 Package equivalent circuit SOT343R2.
fA
−
1.21
21
List of components (see Fig.16)
RB
Ω
DESIGNATION
VALUE
0.90
UNIT
IRB
RBM
RE
−
−
30
Ω
Lb
Lc
Le
nH
nH
nH
fF
4.36
20.5
−2.2
1.014
3
mΩ
Ω
1.02
0.33
133
65
RC
XTB
EG
−
Cbe1
Cbe2
Cce
eV
−
fF
XTI
CJE
VJE
MJE
TF
66
fF
54.3
877
0.202
2.8
fF
mV
−
Ccs
100
170
fF
Rcs
Ω
ps
−
XTF
VTF
ITF
0.9
0.026
0.9
V
A
PTF
CJC
VJC
MJC
XCJC
TR
30
deg
fF
mV
−
30
577
0.239
0.44
20
−
ns
fF
mV
−
CJS
VJS
MJS
FC
8.84
500
0.6447
0.7
−
Note
1. Not used.
2003 Jun 12
10
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads
SOT343R
D
B
E
A
X
H
v
M
A
y
E
e
3
4
Q
A
A
1
c
2
1
L
p
w
M
B
b
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.15
0.2
0.2
0.1
1.3
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT343R
97-05-21
2003 Jun 12
11
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Jun 12
12
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
NOTES
2003 Jun 12
13
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
NOTES
2003 Jun 12
14
Philips Semiconductors
Product specification
NPN SiGe wideband transistor
BFU510
NOTES
2003 Jun 12
15
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/03/pp16
Date of release: 2003 Jun 12
Document order number: 9397 750 11469
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