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BFU520XRR [NXP]

BFU520XR - NPN wideband silicon RF transistor SOT-143 4-Pin;
BFU520XRR
型号： BFU520XRR
厂家： NXP    NXP
描述：

BFU520XR - NPN wideband silicon RF transistor SOT-143 4-Pin
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BFU520XR  
NPN wideband silicon RF transistor  
Rev. 1 — 5 March 2014  
Product data sheet  
1. Product profile  
1.1 General description  
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin  
dual-emitter SOT143R package.  
The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to  
medium power applications up to 2 GHz.  
1.2 Features and benefits  
Low noise, high breakdown RF transistor  
AEC-Q101 qualified  
Minimum noise figure (NFmin) = 0.65 dB at 900 MHz  
Maximum stable gain 20 dB at 900 MHz  
11 GHz fT silicon technology  
1.3 Applications  
Applications requiring high supply voltages and high breakdown voltages  
Broadband amplifiers up to 2 GHz  
Low noise amplifiers for ISM applications  
ISM band oscillators  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 C unless otherwise specified  
Symbol Parameter  
Conditions  
open emitter  
open base  
Min Typ Max Unit  
VCB  
VCE  
collector-base voltage  
collector-emitter voltage  
-
-
24  
12  
24  
2
V
-
-
V
shorted base  
open collector  
-
-
V
VEB  
IC  
emitter-base voltage  
collector current  
-
-
V
-
5
30  
mA  
[1]  
Ptot  
hFE  
CCBS  
fT  
total power dissipation  
DC current gain  
Tsp 87 C  
-
-
450 mW  
200  
IC = 5 mA; VCE = 8 V  
60  
-
95  
0.28  
10.5  
collector-base capacitance VCB = 8 V; f = 1 MHz  
transition frequency IC = 10 mA; VCE = 8 V; f = 900 MHz  
-
-
pF  
-
GHz  
 
 
 
 
 
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
Table 1.  
Quick reference data …continued  
Tamb = 25 C unless otherwise specified  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
[2]  
Gp(max)  
NFmin  
maximum power gain  
minimum noise figure  
IC = 5 mA; VCE = 8 V; f = 900 MHz  
IC = 1 mA; VCE = 8 V; f = 900 MHz; S = opt  
-
-
-
20  
-
-
-
dB  
0.65  
7.0  
dB  
PL(1dB)  
output power at 1 dB gain  
compression  
IC = 10 mA; VCE = 8 V; ZS = ZL = 50 ;  
f = 900 MHz  
dBm  
[1] Tsp is the temperature at the solder point of the collector lead.  
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.  
2. Pinning information  
Table 2.  
Discrete pinning  
Description  
collector  
Pin  
1
Simplified outline  
Graphic symbol  
ꢁ
ꢃ
ꢂ
2
emitter  
ꢃ
3
base  
4
emitter  
ꢀꢄꢅꢂ  
DDDꢀꢁꢂꢁꢃꢄꢅ  
ꢀ
ꢁ
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
SOT143R  
-
BFU520XR  
OM7964  
-
-
plastic surface-mounted package; reverse pinning; 4 leads  
Customer evaluation kit for BFU520XR, BFU530XR and BFU550XR [1]  
[1] The customer evaluation kit contains the following:  
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)  
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration  
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)  
d) BFU520XR, BFU530XR and BFU550XR samples  
e) USB stick with data sheets, application notes, models, S-parameter and noise files  
4. Marking  
Table 4.  
Marking  
Type number  
Marking  
Description  
BFU520XR  
*TJ  
* = t : made in Malaysia  
* = w : made in China  
BFU520XR  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 1 — 5 March 2014  
2 of 22  
 
 
 
 
 
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
5. Design support  
Table 5.  
Available design support  
Download from the BFU520XR product information page on http://www.nxp.com.  
Support item  
Available  
yes  
Remarks  
Device models for Agilent EEsof EDA ADS  
SPICE model  
Based on Mextram device model.  
yes  
Based on Gummel-Poon device  
model.  
S-parameters  
yes  
yes  
yes  
yes  
yes  
Noise parameters  
Customer evaluation kit  
Solder pattern  
See Section 3 and Section 10.  
Application notes  
See Section 10.1 and Section 10.2.  
6. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
open emitter  
open base  
Min Max  
Unit  
V
VCB  
VCE  
collector-base voltage  
-
-
-
-
-
30  
16  
30  
3
collector-emitter voltage  
V
shorted base  
open collector  
V
VEB  
IC  
emitter-base voltage  
collector current  
V
50  
mA  
Tstg  
VESD  
storage temperature  
electrostatic discharge voltage  
65 +150 C  
Human Body Model (HBM) According to JEDEC  
standard 22-A114E  
-
150  
V
Charged Device Model (CDM) According to  
JEDEC standard 22-C101B  
-
2  
kV  
7. Recommended operating conditions  
Table 7.  
Symbol  
VCB  
Characteristics  
Parameter  
Conditions  
open emitter  
open base  
Min Typ Max  
Unit  
V
collector-base voltage  
collector-emitter voltage  
-
-
-
-
-
-
-
-
-
24  
VCE  
-
12  
V
shorted base  
open collector  
-
24  
V
VEB  
IC  
emitter-base voltage  
collector current  
-
2
V
-
30  
mA  
dBm  
C  
mW  
Pi  
input power  
ZS = 50   
-
10  
Tj  
junction temperature  
total power dissipation  
40  
+150  
450  
[1]  
Ptot  
Tsp 87 C  
-
[1] Tsp is the temperature at the solder point of the collector lead.  
BFU520XR  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 1 — 5 March 2014  
3 of 22  
 
 
 
 
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
8. Thermal characteristics  
Table 8.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ Unit  
[1]  
Rth(j-sp)  
thermal resistance from junction to solder point  
140 K/W  
[1] Tsp is the temperature at the solder point of the collector lead.  
Tsp has the following relation to the ambient temperature Tamb  
Tsp = Tamb + P Rth(sp-a)  
:
With P being the power dissipation and Rth(sp-a) being the thermal resistance between the solder point and  
ambient. Rth(sp-a) is determined by the heat transfer properties in the application.  
The heat transfer properties are set by the application board materials, the board layout and the  
environment e.g. housing.  
DDDꢀꢁꢂꢁꢃꢆꢇ  
ꢇꢆꢆ  
33  
WRW  
ꢊP:ꢋ  
ꢉꢆꢆ  
ꢂꢆꢆ  
ꢃꢆꢆ  
ꢀꢆꢆ  
ꢁꢆꢆ  
ꢆ
ꢆ
ꢀꢆ  
ꢂꢆ  
ꢇꢆ  
ꢈꢆ ꢁꢆꢆ ꢁꢀꢆ ꢁꢂꢆ ꢁꢇꢆ  
ꢅꢊƒ&ꢋ  
7
VS  
Fig 1. Power derating curve  
9. Characteristics  
Table 9.  
Characteristics  
Tamb = 25 C unless otherwise specified  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
V(BR)CBO collector-base breakdown voltage  
V(BR)CEO collector-emitter breakdown voltage  
IC = 100 nA; IE = 0 mA  
IC = 150 nA; IB = 0 mA  
24  
12  
-
-
-
V
-
-
V
IC  
collector current  
5
<1  
30  
-
mA  
nA  
ICBO  
hFE  
collector-base cut-off current  
DC current gain  
IE = 0 mA; VCB = 8 V  
IC = 5 mA; VCE = 8 V  
VCE = 8 V; f = 1 MHz  
VEB = 0.5 V; f = 1 MHz  
VCB = 8 V; f = 1 MHz  
-
60 95  
200  
CEBS  
CCES  
CCBS  
fT  
emitter-base capacitance  
collector-emitter capacitance  
collector-base capacitance  
transition frequency  
-
-
-
-
0.55 -  
0.38 -  
pF  
pF  
0.28 -  
10.5 -  
pF  
IC = 10 mA; VCE = 8 V; f = 900 MHz  
GHz  
BFU520XR  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 1 — 5 March 2014  
4 of 22  
 
 
 
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
Table 9.  
Characteristics …continued  
Tamb = 25 C unless otherwise specified  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
[1]  
Gp(max)  
maximum power gain  
insertion power gain  
minimum noise figure  
f = 433 MHz; VCE = 8 V  
IC = 1 mA  
-
-
-
17  
-
dB  
dB  
dB  
IC = 5 mA  
23.5 -  
IC = 10 mA  
26  
-
[1]  
[1]  
f = 900 MHz; VCE = 8 V  
IC = 1 mA  
-
-
-
14  
20  
22  
-
-
-
dB  
dB  
dB  
IC = 5 mA  
IC = 10 mA  
f = 1800 MHz; VCE = 8 V  
IC = 1 mA  
-
-
-
11.5  
17  
-
-
dB  
dB  
dB  
IC = 5 mA  
IC = 10 mA  
17.5 -  
s212  
f = 433 MHz; VCE = 8 V  
IC = 1 mA  
-
-
-
10.5 -  
dB  
dB  
dB  
IC = 5 mA  
21  
-
IC = 10 mA  
23.5 -  
f = 900 MHz; VCE = 8 V  
IC = 1 mA  
-
-
-
9.5  
-
dB  
dB  
dB  
IC = 5 mA  
17.5 -  
IC = 10 mA  
19  
-
-
f = 1800 MHz; VCE = 8 V  
IC = 1 mA  
-
-
-
6.5  
dB  
dB  
dB  
IC = 5 mA  
12.5 -  
IC = 10 mA  
13  
-
NFmin  
f = 433 MHz; VCE = 8 V; S = opt  
IC = 1 mA  
-
-
-
0.5  
-
dB  
dB  
dB  
IC = 5 mA  
0.75 -  
0.85 -  
IC = 10 mA  
f = 900 MHz; VCE = 8 V; S = opt  
IC = 1 mA  
-
-
-
0.65 -  
dB  
dB  
dB  
IC = 5 mA  
0.8  
0.9  
-
-
IC = 10 mA  
f = 1800 MHz; VCE = 8 V; S = opt  
IC = 1 mA  
-
-
-
0.9  
-
dB  
dB  
dB  
IC = 5 mA  
0.95 -  
1.0  
IC = 10 mA  
-
BFU520XR  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 1 — 5 March 2014  
5 of 22  
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
Table 9.  
Characteristics …continued  
Tamb = 25 C unless otherwise specified  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
Gass  
associated gain  
f = 433 MHz; VCE = 8 V; S = opt  
IC = 1 mA  
-
-
-
26  
-
dB  
dB  
dB  
IC = 5 mA  
25.5 -  
IC = 10 mA  
26  
-
f = 900 MHz; VCE = 8 V; S = opt  
IC = 1 mA  
-
-
-
18  
19  
20  
-
-
-
dB  
dB  
dB  
IC = 5 mA  
IC = 10 mA  
f = 1800 MHz; VCE = 8 V; S = opt  
IC = 1 mA  
-
-
-
11.5  
-
dB  
dB  
dB  
IC = 5 mA  
13.5 -  
14.5 -  
IC = 10 mA  
PL(1dB)  
output power at 1 dB gain compression f = 433 MHz; VCE = 8 V; ZS = ZL = 50   
IC = 5 mA  
-
-
1.5  
6
-
-
dBm  
dBm  
IC = 10 mA  
f = 900 MHz; VCE = 8 V; ZS = ZL = 50   
IC = 5 mA  
-
-
2
7
-
-
dBm  
dBm  
IC = 10 mA  
f = 1800 MHz; VCE = 8 V; ZS = ZL = 50   
IC = 5 mA  
-
-
3.5  
7.5  
-
-
dBm  
dBm  
IC = 10 mA  
IP3o  
output third-order intercept point  
f1 = 433 MHz; f2 = 434 MHz; VCE = 8 V;  
ZS = ZL = 50   
IC = 5 mA  
-
-
11  
16  
-
-
dBm  
dBm  
IC = 10 mA  
f1 = 900 MHz; f2 = 901 MHz; VCE = 8 V;  
ZS = ZL = 50   
IC = 5 mA  
-
-
12  
17  
-
-
dBm  
dBm  
IC = 10 mA  
f1 = 1800 MHz; f2 = 1801 MHz;  
VCE = 8 V; ZS = ZL = 50   
IC = 5 mA  
-
-
13  
17  
-
-
dBm  
dBm  
IC = 10 mA  
[1] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.  
BFU520XR  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 1 — 5 March 2014  
6 of 22  
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
9.1 Graphs  
DDDꢀꢁꢂꢁꢆꢃꢈ  
ꢃꢀ  
ꢀꢂ  
ꢁꢇ  
ꢈ
,
&
ꢊP$ꢋ  
ꢊꢌꢋ  
ꢊꢇꢋ  
ꢊꢉꢋ  
ꢊꢂꢋ  
ꢊꢃꢋ  
ꢊꢀꢋ  
ꢊꢁꢋ  
ꢆ
ꢆ
ꢁ
ꢀ
ꢃ
ꢂ
ꢉ
ꢇ
ꢌ
ꢈ
9
ꢅꢊ9ꢋ  
&(  
Tamb = 25 C.  
(1)  
IB = 25 A  
(2) IB = 75 A  
(3) IB = 125 A  
(4)  
IB = 175 A  
(5) IB = 225 A  
(6) IB = 275 A  
(7)  
IB = 325 A  
Fig 2. Collector current as a function of collector-emitter voltage; typical values  
DDDꢀꢁꢂꢁꢆꢃꢅ  
DDDꢀꢁꢂꢁꢆꢃꢉ  
ꢁꢉꢆ  
)(  
ꢁꢉꢆ  
K
)(  
K
ꢁꢀꢉ  
ꢁꢆꢆ  
ꢌꢉ  
ꢉꢆ  
ꢀꢉ  
ꢆ
ꢁꢀꢉ  
ꢁꢆꢆ  
ꢌꢉ  
ꢉꢆ  
ꢀꢉ  
ꢆ
ꢊꢃꢋ  
ꢊꢀꢋ  
ꢊꢁꢋ  
ꢊꢀꢋ  
ꢊꢁꢋ  
ꢆ
ꢉ
ꢁꢆ  
ꢁꢉ  
ꢀꢆ  
ꢀꢉ  
ꢃꢆ  
ꢆ
ꢉ
ꢁꢆ  
ꢁꢉ  
ꢀꢆ  
ꢀꢉ  
ꢃꢆ  
,
&
ꢅꢊP$ꢋ  
,
&
ꢅꢊP$ꢋ  
Tamb = 25 C.  
CE = 3.0 V  
(2) VCE = 8.0 V  
V
CE = 8 V.  
(1)  
V
(1)  
(2) Tamb = +25 C  
(3) Tamb = +125 C  
Tamb = 40 C  
Fig 3. DC current gain as function of collector  
current; typical values  
Fig 4. DC current gain as function of collector  
current; typical values  
BFU520XR  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 1 — 5 March 2014  
7 of 22  
 
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
DDDꢀꢁꢂꢁꢆꢃꢆ  
DDDꢀꢁꢂꢁꢆꢄꢁ  
,
,
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&
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ꢊP$ꢋ  
ꢏꢁ  
ꢏꢃ  
ꢏꢉ  
ꢏꢌ  
ꢁꢆ  
ꢏꢁ  
ꢁꢆ  
ꢁꢆ  
ꢁꢆ  
ꢁꢆ  
ꢁꢆ  
ꢊꢁꢋ  
ꢊꢀꢋ  
ꢏꢃ  
ꢏꢉ  
ꢊꢁꢋ  
ꢊꢀꢋ  
ꢁꢆ  
ꢁꢆ  
ꢆꢍꢉ  
ꢆꢍꢇ  
ꢆꢍꢌ  
ꢆꢍꢈ  
ꢆꢍꢎ  
ꢅꢊ9ꢋ  
ꢁꢍꢆ  
ꢆꢍꢉ  
ꢆꢍꢇ  
ꢆꢍꢌ  
ꢆꢍꢈ  
ꢆꢍꢎ  
9 ꢅꢊ9ꢋ  
%(  
ꢁꢍꢆ  
9
%(  
Tamb = 25 C.  
Tamb = 25 C.  
(1) VCE = 3.0 V  
(2) VCE = 8.0 V  
(1) VCE = 3.0 V  
(2) VCE = 8.0 V  
Fig 5. Collector current as a function of base-emitter  
voltage; typical values  
Fig 6. Base current as a function of base-emitter  
voltage; typical values  
DDDꢀꢁꢂꢁꢆꢄꢂ  
DDDꢀꢁꢂꢁꢆꢄꢊ  
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ꢊꢁꢋ  
ꢊꢀꢋ  
ꢊꢃꢋ  
ꢁꢆ  
ꢁꢆ  
ꢁꢆ  
ꢀꢆꢆ  
ꢁꢆꢆ  
ꢆ
ꢁ
ꢁꢍꢂ  
ꢁꢍꢈ  
ꢀꢍꢀ  
ꢀꢍꢇ  
ꢅꢊ9ꢋ  
ꢃ
ꢆ
ꢀ
ꢂ
ꢇ
ꢈ
ꢁꢆ  
ꢁꢀ  
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&%  
VCE = 3 V.  
IC = 0 mA; f = 1 MHz; Tamb = 25 C.  
(1) Tamb = 40 C  
(2) Tamb = +25 C  
(3)  
Tamb = +125 C  
Fig 7. Reverse base current as a function of  
emitter-base voltage; typical values  
Fig 8. Collector-base capacitance as a function of  
collector-base voltage; typical values  
BFU520XR  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 1 — 5 March 2014  
8 of 22  
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
DDDꢀꢁꢂꢁꢆꢄꢇ  
ꢁꢀ  
ꢊꢂꢋ  
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7
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&
Tamb = 25 C.  
(1) VCE = 3.3 V  
(2) VCE = 5.0 V  
(3)  
VCE = 8.0 V  
(4) VCE = 12.0 V  
Fig 9. Transition frequency as a function of collector current; typical values  
DDDꢀꢁꢂꢁꢆꢄꢃ  
DDDꢀꢁꢂꢁꢆꢄꢄ  
ꢂꢆ  
ꢃꢆ  
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ꢁꢆ  
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ꢃꢆ  
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ꢁꢆ  
ꢆ
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06*  
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06*  
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SꢊPD[ꢋ  
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ꢀꢁ  
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IC = 5 mA; VCE = 8 V; Tamb = 25 C.  
IC = 10 mA; VCE = 8 V; Tamb = 25 C.  
Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values  
BFU520XR  
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NPN wideband silicon RF transistor  
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VCE = 8 V; Tamb = 25 C.  
VCE = 8 V; Tamb = 25 C.  
(1) f = 300 MHz  
(2) f = 433 MHz  
(3) f = 800 MHz  
(4) f = 900 MHz  
(5) f = 1800 MHz  
If K >1 then Gp(max) = maximum power gain. If K < 1 then  
Gp(max) = MSG.  
(1) f = 300 MHz  
(2) f = 433 MHz  
(3) f = 800 MHz  
(4) f = 900 MHz  
(5) f = 1800 MHz  
Fig 12. Insertion power gain as a function of collector  
current; typical values  
Fig 13. Maximum power gain as a function of collector  
current; typical values  
BFU520XR  
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Product data sheet  
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10 of 22  
BFU520XR  
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NPN wideband silicon RF transistor  
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IC = 10 mA; Tamb = 25 C.  
IC = 10 mA; Tamb = 25 C.  
(1) f = 300 MHz  
(2) f = 433 MHz  
(3) f = 800 MHz  
(4) f = 900 MHz  
(5) f = 1800 MHz  
If K >1 then Gp(max) = maximum power gain. If K < 1 then  
Gp(max) = MSG.  
(1) f = 300 MHz  
(2) f = 433 MHz  
(3) f = 800 MHz  
(4) f = 900 MHz  
(5) f = 1800 MHz  
Fig 14. Insertion power gain as a function of  
collector-emitter voltage; typical values  
Fig 15. Maximum power gain as a function of  
collector-emitter voltage; typical values  
BFU520XR  
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NPN wideband silicon RF transistor  
ꢁ
ꢆꢍꢉ  
ꢀ
ꢆꢍꢀ  
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ꢁꢆ  
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ꢏꢁ  
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VCE = 8 V; 40 MHz f 3 GHz.  
(1) IC = 5 mA  
(2) C = 10 mA  
I
Fig 16. Input reflection coefficient (s11); typical values  
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VCE = 8 V; 40 MHz f 3 GHz.  
(1) IC = 5 mA  
(2) IC = 10 mA  
Fig 17. Output reflection coefficient (s22); typical values  
BFU520XR  
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NPN wideband silicon RF transistor  
DDDꢀꢁꢂꢁꢆꢈꢊ  
DDDꢀꢁꢂꢁꢆꢈꢇ  
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VCE = 8 V; Tamb = 25 C.  
VCE = 8 V; Tamb = 25 C.  
(1) f1 = 433 MHz; f2 = 434 MHz  
(2) f1 = 900 MHz; f2 = 901 MHz  
(3) f1 = 1800 MHz; f2 = 1801 MHz  
(1) f = 433 MHz  
(2) f = 900 MHz  
(3) f = 1800 MHz  
Fig 18. Output third-order intercept point as a function  
of collector current; typical values  
Fig 19. Output power at 1 dB gain compression as a  
function of collector current; typical values  
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IC = 10 mA; Tamb = 25 C.  
IC = 10 mA; Tamb = 25 C.  
(1) f1 = 433 MHz; f2 = 434 MHz  
(2) f1 = 900 MHz; f2 = 901 MHz  
(3) f1 = 1800 MHz; f2 = 1801 MHz  
(1) f = 433 MHz  
(2) f = 900 MHz  
(3) f = 1800 MHz  
Fig 20. Output third-order intercept point as a function  
of collector-emitter voltage; typical values  
Fig 21. Output power at 1 dB gain compression as a  
function of collector-emitter voltage;  
typical values  
BFU520XR  
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Product data sheet  
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BFU520XR  
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NPN wideband silicon RF transistor  
DDDꢀꢁꢂꢁꢆꢈꢈ  
DDDꢀꢁꢂꢁꢆꢈꢅ  
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VCE = 8 V; Tamb = 25 C; S = opt  
.
VCE = 8 V; Tamb = 25 C; S = opt.  
(1) f = 433 MHz  
(2) f = 900 MHz  
(3) f = 1800 MHz  
(1) IC = 1 mA  
(2) IC = 2 mA  
(3)  
IC = 3 mA  
(4) IC = 5 mA  
(5) IC = 8 mA  
(6)  
IC = 10 mA  
(7) IC = 15 mA  
(8) IC = 20 mA  
Fig 22. Minimum noise figure as a function of  
collector current; typical values  
Fig 23. Minimum noise figure as a function of  
frequency; typical values  
BFU520XR  
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Product data sheet  
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14 of 22  
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
ꢁ
ꢆꢍꢉ  
ꢀ
ꢊꢁꢋ  
ꢊꢀꢋ  
ꢊꢃꢋ  
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VCE = 8 V; 400 MHz f 2 GHz.  
(1) IC = 1 mA  
(2) C = 2 mA  
I
(3) IC = 3 mA  
(4) IC = 5 mA  
(5)  
IC = 8 mA  
(6) IC = 10 mA  
(7) IC = 15 mA  
(8)  
IC = 20 mA  
Fig 24. Optimum reflection coefficient (opt); typical values  
10. Application information  
More information about the following application example can be found in the application  
notes. See Section 5 “Design support”.  
The following application example can be implemented using the evaluation kit. See  
Section 3 “Ordering information” for the order type number.  
The following application example can be simulated using the simulation package. See  
Section 5 “Design support”.  
BFU520XR  
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Product data sheet  
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15 of 22  
 
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NPN wideband silicon RF transistor  
10.1 Application example: 433 ISM band LNA  
433 ISM band LNA, optimized for low noise.  
More detailed information of the application example can be found in the application note:  
AN11439.  
9
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Fig 25. Schematic 433 MHz ISM band LNA  
Remark: fine tuning of components maybe required depending on PCB parasitics.  
Table 10. Application performance data at 433 MHz  
ICC = 7 mA; VCC = 3.6 V  
Symbol Parameter  
Conditions  
Min Typ  
Max Unit  
s212  
NF  
insertion power gain  
-
-
-
19  
1.0  
11  
-
-
-
dB  
noise figure  
dB  
IP3o  
output third-order  
intercept point  
f1 = 433.1 MHz; f2 = 433.2 MHz;  
Pi = 30 dBm per carrier  
dBm  
BFU520XR  
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Product data sheet  
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NPN wideband silicon RF transistor  
10.2 Application example: 866 ISM band LNA  
866 ISM band LNA, optimized for low noise.  
More detailed information of the application example can be found in the application note:  
AN11440.  
9
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Fig 26. Schematic 866 MHz ISM band LNA  
Remark: fine tuning of components maybe required depending on PCB parasitics.  
Table 11. Application performance data at 866 MHz  
ICC = 7 mA; VCC = 3.6 V  
Symbol Parameter  
Conditions  
Min Typ  
Max Unit  
s212  
NF  
insertion power gain  
-
-
-
16  
1.1  
14  
-
-
-
dB  
noise figure  
dB  
IP3o  
output third-order  
intercept point  
f1 = 866.1 MHz; f2 = 866.2 MHz;  
Pi = 30 dBm per carrier  
dBm  
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11. Package outline  
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Fig 27. Package outline SOT143R  
BFU520XR  
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Product data sheet  
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12. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
13. Abbreviations  
Table 12. Abbreviations  
Acronym  
AEC  
Description  
Automotive Electronics Council  
Industrial, Scientific and Medical  
Low-Noise Amplifier  
ISM  
LNA  
MSG  
NPN  
Maximum Stable Gain  
Negative-Positive-Negative  
SubMiniature version A  
SMA  
14. Revision history  
Table 13. Revision history  
Document ID  
Release date  
20140305  
Data sheet status  
Change notice  
Supersedes  
BFU520XR v.1  
Product data sheet  
-
-
BFU520XR  
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15. Legal information  
15.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Applications — Applications that are described herein for any of these  
15.2 Definitions  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
15.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
BFU520XR  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 1 — 5 March 2014  
20 of 22  
 
 
 
 
 
 
 
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
Suitability for use in automotive applications — This NXP  
Semiconductors product has been qualified for use in automotive  
applications. Unless otherwise agreed in writing, the product is not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
15.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
16. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BFU520XR  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 1 — 5 March 2014  
21 of 22  
 
 
BFU520XR  
NXP Semiconductors  
NPN wideband silicon RF transistor  
17. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Design support . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Recommended operating conditions. . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
3
4
5
6
7
8
9
9.1  
10  
10.1  
10.2  
Application information. . . . . . . . . . . . . . . . . . 15  
Application example: 433 ISM band LNA. . . . 16  
Application example: 866 ISM band LNA. . . . 17  
11  
12  
13  
14  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18  
Handling information. . . . . . . . . . . . . . . . . . . . 19  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19  
15  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 20  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
15.1  
15.2  
15.3  
15.4  
16  
17  
Contact information. . . . . . . . . . . . . . . . . . . . . 21  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP Semiconductors N.V. 2014.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 5 March 2014  
Document identifier: BFU520XR  
 

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