BGA2012 [NXP]
1900 MHz high linear low noise amplifier; 1900 MHz的高线性低噪声放大器器型号: | BGA2012 |
厂家: | NXP |
描述: | 1900 MHz high linear low noise amplifier |
文件: | 总12页 (文件大小:86K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGA2012
1900 MHz high linear low noise
amplifier
Product specification
2000 Dec 04
Supersedes data of 2000 Sep 06
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
FEATURES
PINNING
• Low current, low voltage
• High linearity
PIN
DESCRIPTION
1
2
RF in
VC
• High power gain
• Low noise
3
VS
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.
4
RF out
GND
5, 6
APPLICATIONS
V
handbook, halfpage
S
• RF front end
6
5
4
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
RF out
DESCRIPTION
BIAS
CIRCUIT
V
C
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
1
2
3
RF in
GND
Top view
MBL251
Marking code: A6-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
PARAMETER
DC supply voltage
CONDITIONS
RF input AC coupled
TYP.
MAX.
4.5
UNIT
3
V
IS
DC supply current
DC control current
insertion power gain
7.5
0.11
16
−
−
−
mA
mA
dB
IC
|s21|2
VC = VS
in application circuit, see Fig.2;
f = 1900 MHz
NF
noise figure
IS = 7 mA; f = 1900 MHz
1.7
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS
VS DC supply voltage RF input AC coupled
MIN.
MAX.
UNIT
−
4.5
VS
V
VC
IS
voltage on control pin
supply current
−
V
forced by DC voltage on RF input
−
15
mA
mA
mW
°C
°C
IC
control current
−
0.25
70
Ptot
Tstg
Tj
total power dissipation
storage temperature
operating junction temperature
Ts ≤ 100 °C
−
−65
−
+150
150
2000 Dec 04
2
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction
to solder point
Ptot = 135 mW; Ts ≤ 100 °C
350
K/W
CHARACTERISTICS
RF input AC coupled; VS = 3 V; IS = 7 mA; f = 1900 MHz; Tj = 25 °C; unless otherwise specified.
SYMBOL
IS
PARAMETER
supply current
CONDITIONS
MIN.
TYP.
7.5
MAX.
10
UNIT
mA
5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
IC
control current
0.11
−11
−20
−14
−9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mA
dB
RL IN
return losses input
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2
dB
dB
RL OUT
|s21|2
NF
return losses output
insertion power gain
noise figure
dB
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application (see Fig.2)
−10
−8
dB
dB
14
dB
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2; IS = 7 mA
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2
16
dB
14
dB
1.7
2.2
2.3
−7
dB
dB
dB
IP3in
input intercept point
dBm
dBm
dBm
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
7
10
2000 Dec 04
3
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
APPLICATION INFORMATION
V
S
V
S
C4
C3
V
C
BIAS
CIRCUIT
L2
V
C
C5
C2
RF out
OUT
C1
RF in
MLD470
IN
SOT363
L1
GND
stripline
C6
Fig.2 Application circuit.
List of components (see Fig.2)
TYPICAL
APPLICATION
HIGH IP3
APPLICATION
COMPONENT
DESCRIPTION
DIMENSIONS
C1, C2
C3, C5
C4
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD inductor
100 pF
100 pF
22 nF
−
0603
0603
−
22 nF
−
−
−
−
C6
100 nF
3.9 nH
3.9 nH
0805
0603
0603
L1
L2
SMD inductor
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (εr = 6.15),
board thickness = 0.64 mm, copper thickness = 35 µm, gold thickness = 5 µm.
2000 Dec 04
4
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
MLD471
MLD472
25
20
10
handbook, halfpage
gain
handbook, halfpage
gain
G
UM
I
S
(dB)
(dB)
(mA)
20
16
8
G
max
2
s
21
2
s
21
15
12
6
10
5
8
4
4
2
I
S
0
0
0
0
0
3
1000
2000
3000
1
2
f (MHz)
V
(V)
C
IC = 7 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω.
f = 1900 MHz; VS = 3 V; PD = −30 dBm.
Fig.3 Insertion gain (|s21|2), GUM and Gmax as
Fig.4 Insertion gain and supply current as
functions of control voltage; typical values.
functions of frequency; typical values.
MLD474
MLD473
20
10
0
handbook, halfpage
handbook, halfpage
2
s
21
IP3
out
(dBm)
IP3
in
(dBm)
(dB)
IP3
IP3
out
15
10
5
5
−5
in
0
−10
−15
0
10
−5
−3
−2
−1
10
10
0
2
4
6
8
I
(mA)
I
(mA)
C
S
VS = VC = 3 V; PD = −30 dBm (both tones); f = 1900 MHz; ∆f = 100 kHz.
f = 1900 MHz; VS = 3 V; PD = −30 dBm.
Fig.6 Output and input 3rd order intercept point
as functions of supply current; typical
application; typical values.
Fig.5 Insertion gain as a function of control
current; typical values.
2000 Dec 04
5
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
MLD475
2
handbook, halfpage
NF
(dB)
1.6
1.2
0.8
0.4
0
2
4
6
8
I
(mA)
S
VS = VC = 3 V; f = 1900 MHz.
Fig.7 Noise figure as a function of
supply current; typical values.
Scattering parameters
VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω; Tamb = 25 °C
s11
s21
s12
s22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
100
200
0.775
0.761
0.709
0.646
0.581
0.519
0.461
0.401
0.350
0.313
0.289
0.278
0.276
0.286
0.293
0.287
−8.390
−16.37
−31.51
−44.97
−56.47
−66.59
−75.41
−83.99
−93.12
−102.0
−110.6
−118.5
−125.0
−131.9
−136.5
−141.6
12.527
12.154
11.213
10.139
9.061
8.131
7.254
6.461
5.869
5.256
4.778
4.394
4.051
3.793
3.571
3.326
171.1
163.1
148.6
136.4
126.1
117.3
109.5
103.1
96.39
90.46
85.58
81.16
77.28
74.34
70.27
67.39
0.005
0.011
0.020
0.028
0.034
0.039
0.043
0.047
0.051
0.054
0.058
0.062
0.066
0.072
0.076
0.083
84.90
79.39
72.23
66.03
61.82
58.86
58.07
57.92
57.26
57.37
58.10
57.66
56.08
60.98
60.21
61.36
0.742
0.731
0.689
0.631
0.573
0.519
0.469
0.428
0.396
0.369
0.348
0.336
0.333
0.316
0.308
0.272
−6.684
−13.15
−24.85
−34.90
−43.40
−50.54
−57.19
−64.08
−70.03
−75.33
−80.47
−85.37
−89.83
−92.61
−94.44
−99.52
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
2000 Dec 04
6
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
90°
1.0
0.8
0.6
0.4
0.2
0
+1
135°
+0.5
45°
+2
+0.2
+5
0.2
0.5
1
2
5
180°
0
0°
100 MHz
3 GHz
1900 MHz
−5
−0.2
−0.5
−2
−45°
−135°
−1
MLD476
1.0
−90°
IC = 7 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω.
Fig.8 Common emitter input reflection coefficient (s11); typical values.
90°
135°
45°
1 GHz
500 MHz
1900 MHz
3 GHz
100 MHz
16
20
12
8
4
180°
0°
−135°
−45°
MLD477
−90°
IC = 7 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω.
Fig.9 Common emitter forward transmission coefficient (s21); typical values.
7
2000 Dec 04
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
90°
135°
45°
3 GHz
20
16
12
8
4
180°
0°
100 MHz
−135°
−45°
MLD478
−90°
IC = 7 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω.
Fig.10 Common emitter reverse transmission coefficient (s12); typical values.
90°
1.0
+1
0.8
0.6
0.4
0.2
0
135°
+0.2
45°
+2
+0.5
+5
0.2
0.5
1
2
5
180°
0
0°
100 MHz
3 GHz
1900 MHz
−5
−0.2
−0.5
−2
−45°
−135°
−1
−90°
MLD479
1.0
IC = 7 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω.
Fig.11 Common emitter output reflection coefficient (s22); typical values.
8
2000 Dec 04
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
2000 Dec 04
9
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Dec 04
10
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
NOTES
2000 Dec 04
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
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For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
70
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/02/pp12
Date of release: 2000 Dec 04
Document order number: 9397 750 07679
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