BGU8009_技术文档

AN11317

BGU8009 GNSS front end evaluation board

Rev. 1 — 5 March 2013

Application note

Document information

Info

Content

Keywords

Abstract

Ordering info

BGU8009, GNSS, FE, LNA

This document explains the BGU8009 GNSS FE evaluation board

Board-number: OM7824

12NC: 9340 665 42598

Contact information For more information, please visit: http://www.nxp.com

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

Revision history

Rev

Date

Description

1

20130305

First publication

Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

2 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

1. Introduction

NXP Semiconductors’ BGU8009 Global Navigation Satellite System (GNSS) Front-End

Evaluation Board (BGU8009 GNSS FE EVB) is designed to evaluate the performance of

the GNSS front-end using:

•

NXP Semiconductors’ BGU8009 GNSS Low Noise Amplifier

A matching inductor

A decoupling capacitor

Two identical GNSS band-pass filters

NXP Semiconductors’ BGU8009 is a low-noise amplifier for GNSS receiver applications

in a plastic, leadless 6 pin, extremely thin small outline SOT1230 at 1.1 x 0.9 x 0.5mm³,

0.4mm pitch. The BGU8009 features gain of 18 dB and a noise figure of 0.65 dB at a

current consumption of 4.4 mA. Its superior linearity performance removes interference

and noise from co-habitation cellular transmitters, while retaining sensitivity. The LNA

components occupy a total area of approximately 8.4 mm2.

In this document, the application diagram, board layout, bill of materials, and typical

results are given, as well as some explanations on GNSS related performance

parameters like out-of-band input third-order intercept point O_IIP3, gain compression

under jamming and noise under jamming.

Fig 1. BGU8009 GNSS front-end evaluation board

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

3 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

2. General description

Modern cellular phones have multiple radio systems, so problems like co-habitation are

quite common. A GNSS receiver implemented in a mobile phone requires the following

factors to be taken into account.

All the different transmit signals that are active in a phone can cause problems like

intermodulation and compression.

Since the GNSS receiver needs to receive signals with an average power level of -130

dBm, sensitivity is very important. Currently there are several GNSS chipsets on the

market that can be implemented in cell phones, PDAs etc. Although many of these

GNSS ICs do have integrated LNA front ends, the noise performance, and as a result the

system sensitivity is not always adequate. The GNSS receiver sensitivity is a measure

for how accurate the coordinates are calculated. The GNSS signal reception can be

improved by a so called GNSS front-end, which improves the sensitivity by filtering out

the unwanted jamming signals and by amplifying the wanted GNSS signal with a low-

noise amplifier.

The pre-filters and post filters are needed to improve the overall linearity of the system as

well as to avoid overdriving the integrated LNA stage of the GNSS receiver.

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

4 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

3. BGU8009 GNSS front-end evaluation board

The BGU8009 front-end evaluation board simplifies the RF evaluation of the BGU8009

GNSS LNA applied in a GNSS front end, that is often used in mobile cell phones. The

evaluation board enables testing of the device RF performance and requires no

additional support circuitry. The board is fully assembled with the BGU8009, including the

input series inductor, decoupling capacitor as well as two SAW filters to optimize the

linearity performance. The board is supplied with two SMA connectors for input and

output connection to RF test equipment. The BGU8009 can operate from a 1.5 V to 3.1 V

single supply and consumes about 4.4 mA.

3.1 Application Circuit

The circuit diagram of the evaluation board is shown in Fig 2. With jumper JU1 the

enable input can be connected either to Vcc or GND.

X3

BGU8009

GNSS FE

EVB

GND V_enV_cc

X4

JU1

C1

6

2

RF in

RF out

X2

L1

5

3

BGU8009

SAW

X1

SAW

4

1

Fig 2. Circuit diagram of the BGU8009 front-end evaluation board

3.2 PCB Layout

A good PCB layout is an essential part of an RF circuit design. The front-end evaluation

board of the BGU8009 can serve as a guideline for laying out a board using the

BGU8009. Use controlled impedance lines for all high frequency inputs and outputs.

Bypass Vcc with decoupling capacitors, preferably located as close as possible to the

device. For long bias lines it may be necessary to add decoupling capacitors along the

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

5 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

line further away from the device. Proper grounding of the GND pins is also essential for

good RF performance. Either connect the GND pins directly to the ground plane or

through vias, or do both, which is recommended. The out-of-band rejection of the SAW

filters also depends on the grounding of the filter. The material that has been used for the

evaluation board is FR4 using the stack shown in Fig 4. The input circuit has also SMD-

positions for optional input filtering circuits (not used in this version of the FE-EVB).

3.3 Board Layout

Fig 3. Printed-Circuit Board layout of the BGU8009 front-end evaluation board

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

6 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

20um Cu

0.2mm FR4 Critical

20um Cu

0.8mm FR4 only for

mechanical rigidity of PCB

20um Cu

(1) Material supplier is ISOLA DURAVER; εr = 4.6-4.9: Tδ = 0.02

Fig 4. Stack of the PCB material

4. Bill of materials

Table 1.

BOM of the BGU8009 GNSS front-end evaluation board

Designator Description

Footprint

Value

Supplier Name/type

Comment

Marking

code: A

BGU8009

1.1 x 0.9 x 0.5

mm³

NXP

SOT1230

0.4 mm pitch

20 x 35 mm²

0402

PCB

C1

BGU8009 GNSS FE EV Kit

Murata GRM1555

Murata LQW15

Capacitor

Inductor

1nF

Decoupling

L1

0402

5.6nH

Input matching

[1]

JK

SAW BPF

1.4 x 1.1 x 0.4

mm³

EPCOS B8313

X1, X2

SMA RD

connector

-

Johnson, End launch SMA

142-0701-841

RF input/ RF output

X3

X4

DC header

-

Molex, PCB header, Right Angle, 1 Bias connector

row, 3 way 90121-0763

JUMPER

Stage

Molex, PCB header, Vertical, 1 row, Connect Ven to Vcc

3 way 90120-0763

or separate Ven

voltage

JU1

JUMPER

[1] Although in this case the EPCOS B8313 is used, the performance as given in this document can also be achieved with the use of

GNSS SAW filters from other suppliers. See paragraph 4.2

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

7 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

4.1 BGU8009

NXP Semiconductors’ BGU8009 GNSS low noise amplifier is designed for the GNSS

frequency band. The integrated biasing circuit is temperature stabilized, which keeps the

current constant over temperature. It also enables the superior linearity performance of

the BGU8009. The BGU8009 is also equipped with an enable function that allows it to be

controlled via a logic signal. In disabled mode it consumes less than1 μA.

The output of the BGU8009 is internally matched for 1575.42 MHz whereas only one

series inductor at the input is needed to achieve the best RF performance. Both the input

and output are AC coupled via an integrated capacitor.

It requires only two external components to build a GNSS LNA having the following

advantages:

•

Low noise

High gain

High linearity under jamming

1.1 x 0.9 x 0.5, pitch 0.4mm³, SOT1230

Low current consumption

Short power settling time

4.2 Band pass filters

The band-pass filters that are implemented in the GNSS front-end evaluation board are

key components regarding the overall system linearity and sensitivity. Currently there are

different suppliers on the market that have SAW filters for the GNSS band available. One

of the key performance indicators of these filters is having very high rejection at the

different cell phone TX frequencies, and simultaneously having low insertion loss in the

GNSS pass-band. Although the evaluation board is supplied with two EPCOS B8313

SAW-filters (GPS, COMPASS, Galileo and GLONASS), the following alternatives can be

considered:

1. Murata SAFA1G57KH0F00

2. Murata SAFA1G57KB0F00 low loss variant

3. Fujitsu FAR-F6KA-1G5754-L4AA

4. Fujitsu FAR-F6KA-1G5754-L4AJ

All these filters can use the same footprint. In order to be able to achieve the rejection

level as indicated in the data sheet of these filters, it is necessary that the filters are

properly grounded. In the layout of the front-end evaluation board the suppliers’

recommendations have been followed. See Fig 5, please note that every GND pin has its

own ground-via and there is a ground path between the input and the output.

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

8 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

Fig 5. SAW filter footprint

4.3 Series inductor

The evaluation board is supplied with Murata LQW15 series inductor of 5.6nH. This is a

wire wound type of inductor with high quality factor (Q) and low series resistance (Rs).

This type of inductor is recommended in order to achieve the best noise performance.

High Q inductors from other suppliers can be used. If it is decided to use other low cost

inductors with lower Q and higher Rs the noise performance will degrade.

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

9 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

5. Required Equipment

In order to measure the evaluation board the following is necessary:



DC Power Supply up to 30 mA at 1.5 V to 3.1 V

Two RF signal generators capable of generating RF signals at the operating

frequency of 1575.42 MHz, as well as the jammer frequencies 1713.42 MHz and

1851.42 MHz



An RF spectrum analyzer that covers at least the operating frequency of

1575.42 MHz as well as a few of the harmonics. Up to 6 GHz should be

sufficient.

“Optional” a version with the capability of measuring noise figure is convenient



Amp meter to measure the supply current (optional)

A network analyzer for measuring gain, return loss and reverse isolation

Noise figure analyzer and noise source

Directional coupler

Proper RF cables

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

10 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

6. Connections and setup

The BGU8009 GNSS front-end evaluation board is fully assembled and tested. Please

follow the steps below for a step-by-step guide to operate the front-end evaluation board

and test the device functions.

1. Connect the DC power supply to the V_ccand GND terminals. Set the power supply to

the desired supply voltage, between 1.5 V and 3.1 V, but never exceed 3.1 V as it

might damage the BGU8009.

2. Jumper JU1 is connected between the V_ccterminal of the evaluation board and the

V_enpin of the BGU8009.

3. Connect the RF signal generator and the spectrum analyzer to the RF input and the

RF output of the evaluation board, respectively. Do not turn on the RF output of the

signal generator yet, set it to -40 dBm output power at 1575.42 MHz, set the

spectrum analyzer at 1575.42 MHz center frequency and a reference level of 0 dBm.

4. Turn on the DC power supply and it should read approximately 4.4mA.

5. Enable the RF output of the generator: The spectrum analyzer displays a tone

around –25 dBm at 1575.42 MHz.

6. Instead of using a signal generator and spectrum analyzer one can also use a

network analyzer in order to measure gain as well as in- and output return loss.

7. For noise figure evaluation, either a noise figure analyzer or a spectrum analyzer with

noise option can be used. The use of a 15 dB noise source, like the Agilent 364B is

recommended. When measuring the noise figure of the evaluation board, any kind of

adaptors, cables etc between the noise source and the evaluation board should be

avoided, since this affects the noise figure.

Fig 6. Evaluation board including its connections

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

11 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

7. Linearity

At the average power levels of –130 dBm that have to be received by a GNSS receiver,

the system will not have in-band intermodulation problems caused by the GNSS-signal

itself. Strong out-of-band cell phone TX jammers however can cause linearity problems,

and result in third-order intermodulation products in the GNSS frequency band. In this

chapter the effects of these Jammer-signals on the Noise and Gain performance of the

BGU8009 are described. The effect of these Jammers on the In-band and Out-of-Band

Third-Order Intercept points are described in more detail in a separate User Manual:

UM10453: 2-Tone Test BGU7005 and BGU7007 GPS LNA.

7.1 Out-of-band input third-order intercept point

This parameter is being measured by a two-tone measurement where the carriers have

been chosen as L1+138 MHz and L1+276 MHz. Where L1 is the center of the GNSS

band, 1575.42 MHz. So the two carriers are 1713.42 MHz and 1851.42 MHz that can be

seen as two TX jammers in UMTS FDD and GSM1800 cell phone systems.

One third-order product (2f₁-f₂) generated in the LNA due to amplifier third-order

nonlinearities can fall at the desired 1575.42 MHz frequency as follows:

2f₁-f₂= 2(1713.42 MHz)-1851.42 MHz = 1575.42 MHz.

This third-order product can influence the sensitivity of the GNSS receiver drastically. So

this third-order intermodulation product needs to be as low as possible, meaning the out-

of-band intercept point must be as high as possible.

Fig 7 shows the measurement setup used to measure the out-of-band third order

intercept point. Two RF-generators are used to generate the jammers f₁and f₂. These

two jammers are combined by an RF combiner. A notch filter is used to prevent inserting

an RF signal at the GNSS frequency into the front-end caused by intermodulation of the

two generators and RF combiner combination.

BGU8009

GNSS FE

X3

GND V_enV_cc

G

E

P

V

S

^BGUB^7F0^E⁰⁷

X3

GND

V_enV_cc

EVB

X4

JU1

C1

6

5

C1

2

4

GPS

notch

RF in

_SAWR_RF_Fo_ou_ut_t

RF-generator 2

RF-generator 1

SAW

RF in

L1

5

3

6

3

Spectrum

analyzer

RF

combiner

BGU7007

BGU8009

SAW

1

X1

X^X2²

4

2

1

Fig 7. Out-of-band input third order intercept point measurement setup

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

12 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

The input power levels of f₁and f₂that have been used to measure the IM3 levels on the

front-end evaluation board were +10 dBm, shown in Fig 8. Fig 9 shows the IM3 level at

the output of the front-end, measured at V_CC= 2.85 V.

With the levels shown in Fig 8 and Fig 9, the out-of-band input third-order intercept point

can be calculated.

As shown in Fig 8 P_inof both f₁and f₂is +10 dBm.

Left-side OIM3 = -93 dBm (see Fig 9)

The gain (

SAW filters is ~0.8dB).

G

_p) of the front-end is 16.5 dB (the typ. insertion loss of the EPCOS B8313

Fig 8. Input jammers for IM3 measurements

Fig 9. FE output IM3 level at 1575 MHz

f₁=1713MHz/+10dBm and f₂=1851MHz/+10dBm

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

13 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

7.2 In-band 1dB gain compression due to 850MHz and 1850MHz jammers

For the measurement described below it is necessary to have clean jammer signals with high RF power in

order to measure these parameters on the actual front-end evaluation board. Since these clean signals are

hard to generate, these measurements are performed on a BGU8009 GNSS Low-noise amplifier evaluation

board (user manual available: AN11230). With the results of these measurements and the typical rejection

levels of the band-pass filters at the jamming frequencies, the values valid for the front-end evaluation board

can be calculated.

As already stated before, signal levels in the GNSS frequency band of -130dBm average

will not cause linearity problems in the GNSS band itself. This of course is also valid for

the 1dB gain compression in-band. The 1dB compression point at 1575.42MHz caused

by cell phone TX jammers however is important.

Measurements have been carried out using the setup shown in Fig 10.

BGU7007

BGU8009

X3

GPS LNA

GNSS LNA

GND

V

cc

V_enV_cc

en

EVB

X4

Jammer signal

RF-generator 2

JU1

C1

6

5

2

4

R

F

i

n

RF out

L1

-20dB

3

5

6

3

Spectrum

analyzer

RF-generator 1

BGU8009

BGU7007

BGU8006

Directional coupler

1

X1

X2

4

X2

2

1

Fig 10. 1dB Gain compression under jamming measurement setup (LNA evaluation board)

The gain was measured between port RFin and RFout of the EVB at the GNSS

frequency, while simultaneously a jammer power signal was swept at 20dB attenuated

input of the directional coupler. Please note that the drive power of the jammer is 20dB

lower at the input of the DUT caused by the directional coupler. Fig 11 and Fig 12 show

the gain compression curves with 850MHz and 1850MHz jammers respectively (taking

into account the approx 20 dB attenuation of the directional coupler and RF-cable from

Jammer-Generator to the directional coupler).

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

14 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

Calculating the power level at the front-end gain with 1 dB compression is done as

follows:

At 1 dB gain drop the jammer input-power for 850MHz jammer is -10 dBm (Vcc = 2.85 V,

Fig 11). This is for the LNA only. Using the typical rejection of the SAW filter at 850 MHz

which is 51dB⁽¹⁾the 1dB compression jammer signal level equals:

-10 + 51 = +41 dBm.

For 1850 MHz jammer the jammer input-power is -6 dBm (Vcc = 2.85 V, Fig 12). Again

this is for the LNA only. Using the typical rejection of the SAW filter at 1850 MHz which is

43 dB⁽²⁾the 1 dB compression jammer signal level equals: -6 + 43 = +37 dBm.

Gain=f(P_Jammer)

BGU8009 LNA- & FE-EVB, F_Jammer=850MHz

FE-EVB: Calculated values

BGU8009 LNA- & FE-EVB, F_Jammer=1850MHz

FE-EVB: Calculated values

21

20

19

18

17

16

15

14

13

12

11

10

21

20

19

18

17

16

15

14

13

12

11

10

1.50V, LNA-EVB

1.80V, LNA-EVB

2.85V, LNA-EVB

3.1V, LNA-EVB

1.50V, FE-EVB

1.80V, FE-EVB

2.85V, FE-EVB

3.1V, FE-EVB

1.50V, LNA-EVB

1.80V, LNA-EVB

2.85V, LNA-EVB

3.1V, LNA-EVB

1.50V, FE-EVB

1.80V, FE-EVB

2.85V, FE-EVB

3.1V, FE-EVB

-40 -30 -20 -10

0

10

20

30

40

50

-40 -30 -20 -10

0

10

20

30

40

50

P_Jammer [dBm]

(Pin 1575 MHz = -45 dBm)

Fig 11. Gain versus jammer power at 850 MHz

(Pin 1575 MHz = -45 dBm)

Fig 12. Gain versus jammer power at 1850 MHz

1. Typical rejection at 850MHz from datasheet of EPCOS B8313 SAW filter

2. Typical rejection at 1850MHz from datasheet of EPCOS B8313 SAW filter

All information provided in this document is subject to legal disclaimers.

AN11317

Application note

Rev. 1 — 5 March 2013

15 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

8. Noise figure as function of jammer power at 850MHz

and 1850MHz

For the measurement described below it is necessary to have clean jammer signals with high RF power in

order to measure these parameters on the actual front-end evaluation board. Since these clean signals are

hard to generate, these measurements are performed on a BGU8009 GNSS Low-noise amplifier evaluation

board (user manual available: AN11230). With the results of these measurements and the typical rejection

levels of the band-pass filters at the jamming frequencies, the values valid for the front-end evaluation board

can be calculated.

Noise figure under jamming conditions is a measure of how the LNA behaves when e.g.

a GSM TX interfering signal is at the input of the GNSS antenna. To measure this

behavior the setup shown in Fig 13 is used.

The jammer signal is coupled via a directional coupler to the DUT: this is to avoid the

jammer signal damaging the noise source. The GNSS BPF is needed to avoid driving the

second-stage LNA in saturation.

BGU7007

X3

BGU8009

X3

GPS LNA

GNSS LNA

GND

V

cc

en cc

V

en

EVB

X4X4

Jammer signal

RF-generator

JU1

C1

6

5

2^ndstage

LNA

2

4

SAW

RF in

RF out

L1

-20dB

3

6

3

Noise

Source

Noise

analyzer

⁵B

BGU8009

GU7007

Directional coupler

1

X1

X2

4

2

1

Fig 13. Noise under jamming measurement setup (LNA evaluation board)

With the results of these measurements and the specification of the SAW filter, the

jammer power levels that cause noise increase can be calculated.

Calculating the power level at which the front-end noise starts to increase is done as

follows:

As can be seen in Fig 14 with a 850 MHz jammer the LNA starts increasing the noise at

P

_jam= -25 dBm (Vcc = 2.85 V). For the front-end the TX rejection of the first BPF needs

to be added. For the SAW filter used the rejection at 850 MHz is 51 dB⁽³⁾. This means the

noise of the front-end will start increasing at an 850 MHz jammer level of P_jam= -25 + 51

= +26 dBm.

For the 1850 MHz jammer the LNA noise starts to increase at P_jam= -30 dBm (Vcc = 2.85

V, see Fig 15). The rejection of the SAW filter at 1850 MHz is 43 dB⁽⁴⁾. This means the

3. Rejection at 850MHz from datasheet of EPCOS B8313 SAW filter

4. Rejection at 1850MHz from datasheet of EPCOS B8313 SAW filter

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

16 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

noise of the front-end will start increasing at an 1850 MHz jammer level of P_jam= -30 +43

= +13 dBm.

NF [dB]=f(P_Jammer)

BGU8009 LNA- & FE-EVB, Fjammer=850MHz

BGU8009 LNA- & FE-EVB, Fjammer=1850MHz

FE-EVB: Calculated values

3.00

2.00

1.00

0.00

3.00

2.00

1.00

0.00

1.5V, LNA-EVB

1.8V, LNA-EVB

2.85V, LNA-EVB

3.1V, LNA-EVB

1.5V, FE-EVB

1.5V, LNA-Board

1.8V, LNA-Board

2.85V, LNA-Board

3.1V, LNA-Board

1.5V, FE-Board

1.8V, FE-Board

2.85V, FE-Board

3.1V, FE-Board

1.8V, FE-EVB

2.85V, FE-EVB

3.1V, FE-EVB

-40 -30 -20 -10

0

10 20 30 40 50

-40 -30 -20 -10

0

10 20 30 40 50

P_Jammer [dBm]

Incl. the losses of the connectors and the PCB.

Measured at T_anb= 25 ^oC.

Incl. the losses of the connectors and the PCB.

Measured at T_anb= 25 ^oC.

Fig 14. NF at 1575 MHz versus jammer power at 850

MHz

Fig 15. NF at 1575 MHz versus jammer power at 1850

MHz

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

17 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

9. TX rejection levels

When measuring the front-end evaluation board the input level of the network analyzer

has to be on -45 dBm to avoid activating the adaptive biasing. This low input level results

in a very inaccurate measurement result of the TX rejection. Fig 16 and Fig 17 show the

typical TX rejection levels measured more accurate due to segmented power calibration.

Fig 16. Typical S-parameter plot at Vcc = 2.85 V

BGU8009 FE-Board

40

20

0

-5

0

S21

S11

S22

-10

-15

-20

-25

-20

-40

-60

-80

-100

1.4E+09

1.5E+09

1.6E+09

1.7E+09

1.8E+09

Freq [Hz]

Fig 17. Typical pass band response at Vcc = 2.85 V

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

18 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

10. LTE rejection level

The second harmonic of an LTE-signal (788MHz) falls into the GNSS-band (2x 788MHz

= 1576MHz) and can be responsible for a reduction of the sensitivity of the GNSS-

system. To test the Second Harmonic (H2) –performance, a measurement has been

done.

The measurement setup is given in Fig 18. A notch is used to reduce the second

harmonic caused by the input generator. A 10dB attenuator is used to get a good 50Ω

impedance (some notch-filters have an output-impedance which is not 50Ω over a wide

frequency range).

BGU7007

BGU8009

X3

GPS LNA

GNSS FE

GND

V

en

cc

^EE^VV^BB

X4

Jammer signal

JU1

Suppress H2- RF-generator

RF-generator 2

C1

6

5

2

4

RF in

RF out

RF in

RF out

L1

SAW

L1

-20dB

3

5

6

3

Spectrum

analyzer

RF-NOTCH

Directional coupler

ATT

10dB

RF-generator 1

BGU8009

BGU7007

@1576MHz

SAW

1

X1

X2

4

X1

X2

2

1

F = 788MHz

Improve mismatch RF-Notch-filter

Fig 18. LTE rejection measurement setup (LNA evaluation board)

Table 2 shows an overview of the measured performance (as comparison also the P_H2

results of the BGU8009 LNA-EVB is given; source: AN11288, BGU8009 GNSS LNA

evaluation board).

Table 2.

Measured performance of BGU8009 LNA- and FE-EVB’s

Vcc=2.85V, Icc ~4.7mA, Temp = 25 °C

Parameter

Symbol

P_in=0dBm

P_in=+5dBm

P_in=+10dBm

Unit Remarks

[1]

P_H2 (input referred)

P_H2

-102

-92

-82

dBm

[1] F_in= 788MHz, F_meas= 1576MHz.

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

19 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

11. Typical front-end evaluation board results

Table 3.

Typical results measured on the evaluation boards

Operating Frequency is f = 1575.42 MHz unless otherwise specified; Temp = 25 °C

Parameter

Symbol

V_CC

FE EVB FE EVB FE EVB

FE EVB Unit Remarks

Supply Voltage

1.5

1.8

2.85

4.8

3.1

V

Supply Current

I_CC

4.5

4.6

4.9

mA

dB

[2]

Noise Figure

NF

1.7

1.6

Power Gain

G_p

16.1

13.8

10.8

38.7

-11.0

4.1

16.3

13.1

10.8

39.2

-9.0

6.3

16.5

12.3

10.9

39.5

-5.9

9.6

16.6

12.4

10.9

39.3

-5.7

9.9

dB

Input Return Loss

Output Return Loss

Reverse Isolation

Input 1dB Gain Compression

Output 1dB Gain Compression

RL_in

dB

RL_out

ISO_rev

P_i1dB

P_o1dB

P_i1dB_850MHz

dB

dBm

[4]

Input 1dB Gain Compression

jammer level at 850MHz

+41

Input 1dB Gain Compression

jammer level at 1850MHz

P_i1dB_1850MHz

+37

dBm

[3][4]

[4]

P_H2 (input referred)

P_H2

-82

dBm

dBc

Cell band rejection at 850 MHz

relative to 1575.42 MHz

TX_rej_850MHz

>100

[4]

[5]

Cell band rejection at 1850 MHz TX_rej_1850MHz

relative to 1575.42 MHz

>90

dBc

Output third order intermod.

OIM3

T_on

-93

< 2

< 1

dBm

µs

< 2

< 1

< 2

< 1

< 2

< 1

Power settling time

T_off

µs

[2] The noise figure and gain figures are measured at the SMA connectors of the evaluation board. The losses of the connectors and the

PCB of approximately 0.1dB are not subtracted. Measured at T_anb= 25 ^oC.

[3] F_in= 788MHz, Pin = +10dBm, F_meas= 1576MHz.

[4] These parameters are mainly determined by the TX rejection levels of the used BPFs, in this case the EPCOS B8313 SAW filter, but

the performance can also be achieved with the use of GNSS SAW filters from other suppliers that are on the market.

See paragraph 4.2.

[5] Out of band IM3-component (OIM3) at 1575MHz, jammers at f₁=f+138MHz and f₂=f+276MHz, where f=1575MHz.

P_in(f₁)=P_in(f₂)=+10dBm

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

20 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

12. Legal information

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the NXP Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

12.1 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

12.2 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Evaluation products — This product is provided on an “as is” and “with all

faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates

and their suppliers expressly disclaim all warranties, whether express,

implied or statutory, including but not limited to the implied warranties of non-

infringement, merchantability and fitness for a particular purpose. The entire

risk as to the quality, or arising out of the use or performance, of this product

remains with customer.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability

towards customer for the products described herein shall be limited in

accordance with the Terms and conditions of commercial sale of NXP

Semiconductors.

In no event shall NXP Semiconductors, its affiliates or their suppliers be

liable to customer for any special, indirect, consequential, punitive or

incidental damages (including without limitation damages for loss of

business, business interruption, loss of use, loss of data or information, and

the like) arising out the use of or inability to use the product, whether or not

based on tort (including negligence), strict liability, breach of contract, breach

of warranty or any other theory, even if advised of the possibility of such

damages.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Notwithstanding any damages that customer might incur for any reason

whatsoever (including without limitation, all damages referenced above and

all direct or general damages), the entire liability of NXP Semiconductors, its

affiliates and their suppliers and customer’s exclusive remedy for all of the

foregoing shall be limited to actual damages incurred by customer based on

reasonable reliance up to the greater of the amount actually paid by

customer for the product or five dollars (US$5.00). The foregoing limitations,

exclusions and disclaimers shall apply to the maximum extent permitted by

applicable law, even if any remedy fails of its essential purpose.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

12.3 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are property of their respective owners.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

21 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

13. List of figures

Fig 1.

Fig 2.

BGU8009 GNSS front-end evaluation board ....3

Circuit diagram of the BGU8009 front-end

evaluation board ...............................................5

Fig 3.

Printed-Circuit Board layout of the BGU8009

front-end evaluation board................................6

Fig 4.

Fig 5.

Fig 6.

Fig 7.

Stack of the PCB material.................................7

SAW filter footprint............................................9

Evaluation board including its connections .....11

Out-of-band input third order intercept point

measurement setup ........................................12

Fig 8.

Fig 9.

Fig 10.

Input jammers for IM3 measurements ............13

FE output IM3 level at 1575 MHz....................13

1dB Gain compression under jamming

measurement setup (LNA evaluation board)...14

Fig 11.

Fig 12.

Fig 13.

Gain versus jammer power at 850 MHz..........15

Gain versus jammer power at 1850 MHz........15

Noise under jamming measurement setup (LNA

evaluation board) ............................................16

Fig 14.

Fig 15.

NF at 1575 MHz versus jammer power at 850

MHz ................................................................17

NF at 1575 MHz versus jammer power at 1850

MHz ................................................................17

Fig 16.

Fig 17.

Fig 18.

Typical S-parameter plot at Vcc = 2.85 V........18

Typical pass band response at Vcc = 2.85 V..18

LTE rejection measurement setup (LNA

evaluation board) ............................................19

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

22 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

14. List of tables

Table 1. BOM of the BGU8009 GNSS front-end

evaluation board ...............................................7

Table 2. Measured performance of BGU8009 LNA- and

FE-EVB’s ........................................................19

Table 3. Typical results measured on the evaluation

boards.............................................................20

AN11317

All information provided in this document is subject to legal disclaimers.

Application note

Rev. 1 — 5 March 2013

23 of 24

AN11317

NXP Semiconductors

BGU8009 GNSS FE EVB

15. Contents

1.

2.

Introduction .........................................................3

General description.............................................4

3.

BGU8009 GNSS front-end evaluation board.....5

Application Circuit ..............................................5

PCB Layout........................................................5

Board Layout......................................................6

3.1

3.2

3.3

4.

Bill of materials....................................................7

BGU8009 ...........................................................8

Band pass filters.................................................8

Series inductor ...................................................9

4.1

4.2

4.3

5.

6.

Required Equipment .........................................10

Connections and setup.....................................11

7.

7.1

7.2

Linearity .............................................................12

Out-of-band input third-order intercept point ....12

In-band 1dB gain compression due to 850MHz

and 1850MHz jammers....................................14

8.

Noise figure as function of jammer power at

850MHz and 1850MHz .......................................16

9.

TX rejection levels.............................................18

LTE rejection level.............................................19

Typical front-end evaluation board results.....20

10.

11.

12.

Legal information ..............................................21

Definitions ........................................................21

Disclaimers.......................................................21

Trademarks......................................................21

12.1

12.2

12.3

13.

14.

15.

List of figures.....................................................22

List of tables......................................................23

Contents.............................................................24

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in the section 'Legal information'.

For more information, visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 5 March 2013

Document identifier: AN11317


型号：	BGU8009
厂家：	NXP
描述：	1559MHz - 1610MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER, 1.10 X 0.90 MM, LEADLESS, PLASTIC, THIN, SOT-1230, XSON6, 6 PIN 放大器射频微波功率放大器
文件：	总24页 (文件大小：634K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BGU8009 [NXP]

相关型号：

BGU8009,115

BGU8061J

BGU8063J

BGU8821

BGU8821/A

BGU8821/AY

BGU8821A

BGU8822

BGU8822/A

BGU8822/AY

BGU8822A

BGU8823