BGY280 [NXP]
UHF amplifier module; UHF放大器器模块
| 型号： | BGY280 |
| 厂家： | 
NXP |
| 描述： | UHF amplifier module |
| 文件： | 总11页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY280
UHF amplifier module
Preliminary specification
2000 Nov 15
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
FEATURES
PINNING - SOT559A
PIN
• Dual band GSM amplifier
DESCRIPTION
• 3.6 V nominal supply voltage
1,2,3,6,9,10,11,14
Ground
• 33.5 dBm output power for GSM1800
• 35.5 dBm output power for GSM900
• Easy output power control by DC voltage.
• Internal input and output matching.
4
5
RF output 2 (1800 MHz)
V
S2 (1800 MHz)
S1 (900 MHz)
7
V
8
RF output 1 (900 MHz)
RF input 1 (900 MHz)
12
13
15
16
APPLICATIONS
V
C1 (900 MHz)
C2 (1800 MHz)
V
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
RF input 2 (1800 MHz)
1
2
3
16
15
4
5
DESCRIPTION
The BGY280 is a power amplifier module in a SOT559A
leadless package with a plastic cap. The dimensions are
13.75 x 11 x 1.7 mm. The module consists of two
separated line-ups. One for GSM900 and one for
GSM1800. Internal power control, input and output
matching.
14
6
13
12
7
8
11
10
9
Bottom view
MBL031
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
OPERATION
f
VS
(V)
VC
(V)
PL
(dBm)
Gp
(dB)
η
(%)
ZS, ZL
(Ω)
(MHz)
880 to 915
3.6
3.6
≤2.2
≤2.2
typ. 35.5
typ. 33.5
typ. 35.5
typ. 33.5
47
40
50
50
Pulsed; δ = 2 : 8
1710 to 1785
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
DC supply voltage
CONDITIONS
MIN.
MAX.
UNIT
V
V
C1,2 = 0; RFIN = off
−
7
V
VS1, VS2
C1,2 > 0.5 V; RFIN = on
−
5.5
3
V
VC1, VC2
DC control voltage
input drive power
−
V
PD1, PD2
PL1
−
10
4
mW
W
W
°C
°C
load power 1
−
PL2
load power 2
−
3
Tstg
storage temperature
operating mounting base temperature
−40
−30
+100
+100
Tmb
2000 Nov 15
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
CHARACTERISTICS
ZS = ZL = 50 Ω; PD1,2 = 0 dBm; VS1 = VS2 = 3.6 V; VC1,2 ≤ 2.2 V; Tmb = 25 °C; tp = 575 µs; δ = 2 : 8;
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified.
SYMBOL
PARAMETER
leakage current
CONDITIONS
VC1,2 = 0.2 V
MIN.
TYP. MAX.
UNIT
µA
IL
−
−
10
2
I
CM1, ICM2 peak control current
−
−
mA
dBm
dBm
dBm
dBm
dB
V
V
V
V
C1 = 2.2 V
34.5
35.5
35
−
PL1
load power GSM 900
load power GSM 1800
C1 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C 34
−
C2 = 2.2 V
32.5
33.5
33
−
PL2
C2 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C 32
−
GP1
GP2
η1
power gain GSM900
power gain GSM1800
efficiency GSM900
efficiency GSM1800
harmonics GSM900
harmonics GSM1800
PL1 = 35.5 dBm
PL2 = 33 dBm
PL1 = 35 dBm
PL2 = 32 dBm
PL1 = 34 dBm
PL2 = 32 dBm
−
35.5
33.5
45
−
−
−
dB
40
33
−
−
%
η2
38
−
%
−
−40
−35
3 : 1
dBc
dBc
H2, H3
−
−
V
P
S1,2 = 3.2 to 5 V; PL1 = 34 dBm;
L2 = 32 dBm
−
input VSWR of active device
VSWRin
input VSWR of inactive
device
VS1,2 = 3.2 to 5 V; VC1,2 ≤ 0.5 V
−
8 : 1
isolation GSM900
isolation GSM1800
VC1,2 = 0.5 V; PD1,2 = 3 dBm
−
−
−
−54
−42
−21
−37
−37
−20
dBm
dBm
dBm
V
C1,2 = 0.5 V; PD1,2 = 3 dBm
second harmonic isolation
PL1 = 35 dBm
from GSM900 into GSM1800
maximum slope
carrier rise time
−5 dBm < PL1,2 < PL max
120
−
200
2
dB/V
tr
tf
PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm;
time to settle within −0.5 dB of final PL
−
1.5
µs
carrier fall time
PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm;
time to fall below −37 dBm
−
−
−
−
−
1.5
−
2
µs
PL1 ≤ 34 dBm; bandwidth = 100 kHz;
f = 925 - 935 MHz; fc = 897.5 MHz
−71
−80
−73
6
dBm
dBm
dBm
deg/dB
noise power GSM900
PL1 ≤ 34 dBm; bandwidth = 100 kHz;
f = 935 - 960 MHz; fc = 897.5 MHz
−82
−80
−
Pn
noise power GSM1800
AM/PM conversion
PL2 ≤ 32 dBm; bandwidth = 100 kHz;
f = 1805 - 1880 MHz; fc = 1747.5 MHz
P
D1,2 = −0.5 to 0.5 dBm;
PL1,2 = constant during measurement
for PL1 = 6 to 34 dBm and
PL2 = 4 to 32 dBm
PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm;
f = 100 kHz; PD1,2 = 5.4 %
−
25
%
AM/AM conversion
2000 Nov 15
3
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX.
UNIT
dB
TX / RX conversion
PL1 = 34 dBm; f = 915 MHz
−
25
−
PL1 (925 MHz) / PD (905 MHz)
PL2 = 32 dBm; f = 1785 MHz
PL2 (1765 MHz) / PD (1805 MHz)
control bandwidth
stability
PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm;
VS1,2 = 3.2 to 5 V; VC = 0 to 2.2 V;
1
1.5
−
MHz
dBc
−
−
−60
P
P
D1,2 = 0 to 3 dBm; PL1 < 34.8 dBm;
L2 < 32.5 dBm;
VSWR ≤ 6 : 1 through all phases
ruggedness
VS1,2 = 5 V; PD1,2 = 0 to 3 dBm;
no degradation
no degradation
PL1 = 34.8 dBm; PL2 = 32.5 dBm;
VSWR ≤ 6 : 1 through all phases
VS1,2 = 4.2 V; PD1,2 = 0 to 3 dBm;
PL1 = 34.8 dBm; PL2 = 32.5 dBm;
VSWR ≤ 10 : 1 through all phases
40
50
PL
(dBm)
η
(%)
897.5MHz
40
30
20
10
0
35
30
25
20
1747.5MHz
1785MHz
1710MHz
915MHz
880MHz
1
1.5
2
2.5
20
25
30
35
40
PL (dBm)
VC (V)
ZS = ZL = 50 Ω; VS = 3.6 V; PD = 0 dBm;
Tmb = 25 °C; δ = 2 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VS = 3.6 V; PD = 0 dBm;
Tmb = 25 °C; δ = 2 : 8; tp = 575 µs.
Fig.2 Load power as a function of control voltage;
typical values.
Fig.3 Efficiency as a function of load power;
typical values.
2000 Nov 15
4
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
-20
-20
H3
H2
(dBc)
(dBc)
-30
-40
-50
-60
-30
1710MHz
915MHz
880MHz
-40
-50
-60
915MHz
880MHz
1785MHz
1710MHz
1785MHz
20
25
30
35
PL (dBm)
40
20
25
30
35
PL (dBm)
40
ZS = ZL = 50 Ω; VS = 3.6 V; PD = 0 dBm;
Tmb = 25 °C; δ = 2 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VS = 3.6 V; PD = 0 dBm;
Tmb = 25 °C; δ = 2 : 8; tp = 575 µs.
Fig.4 Second harmonic as a function of load
power; typical values.
Fig.5 Third harmonic as a function of load power;
typical values.
40
40
gain
(dB)
gain
(dB)
small signal gain
(1)
30
30
small signal gain
(2)
(1)
(2)
(3)
(3)
(4)
20
20
(5)
conversion gain
(6)
conversion gain
(4)
10
0
10
0
(5)
(6)
10
20
30
40
PL (dBm)
10
20
30
40
PL (dBm)
ZS = ZL = 50 Ω; PD = 0 dBm; VS = 3.6 V;Tmb = 25 °C;
fc = 1747.5 MHz; δ = 2 : 8; t p = 575 µs.
ZS = ZL = 50 Ω; VS = 3.6 V; PD = 0 dBm;
Tmb = 25 °C; fc = 897.5 MHz; δ = 2 : 8; t p = 575 µs.
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
(4) f = 1615 MHz
(5) f = 1625.5 MHz
(6) f = 1690 MHz
(1) f = 925 MHz
(2) f = 942.5 MHz
(3) f = 960 MHz
(4) f = 835 MHz
(5) f = 852.5 MHz
(6) f = 870 MHz
Fig.6 Gain as a function of load power; typical
values.
Fig.7 Gain as a function of load power; typical
values.
2000 Nov 15
5
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
40
8
output
AM
(%)
AM-PM
(deg/dB)
6
4
2
0
30
1800MHz
20
900MHz
10
1800MHz
900MHz
0
0
10
20
30
40
PL (dBm)
-10
0
10
20
30
PL (dBm)
40
ZS = ZL = 50 Ω; VS = 3.6 V; PD = 0 dBm; Tmb = 25 °C;
∆f = 100 kHz; input amplitude modulation = 5.4%; δ = 2 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VS = 3.6 V; PD = 0 dBm; Tmb = 25 °C;
δ = 2 : 8; tp = 575 µs.
Fig.8 Output amplitude modulation as a function
of load power; typical values.
Fig.9 Output phase at PD = +0.5 dBm, relatively
to output phase at PD = −0.5 dBm;
typical values.
-60
noise
(dBm)
-70
RX=1845MHz
-80
RX=942.5MHz
-90
-100
0
10
20
30
PL (dBm)
40
ZS = ZL = 50 Ω; VS = 3.6 V; PD = 0 dBm;
Tmb = 25 °C; δ = 2 : 8; tp = 575 µs.
Fig.10 Noise as a function of load power;
typical values.
2000 Nov 15
6
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
VS
RF input
RF output
Z2
Z3
BGY280
GSM900
8
7
12
VC
VC
13
15
5
4
16
GSM1800
Z1
Z4
RF input
RF output
VS
Fig.11 Test circuit
List of components (See Fig 10 and 11)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C4
multilayer ceramic chip capacitor
electrolytic capacitor
stripline; note 1
100 µF; 40 V
100 nF
C2, C3
Z1, Z2, Z3, Z4
R1, R2
50 Ω
width 2.33 mm
metal film resistor
100 Ω; 0.6 W
2322 156 11001
Note
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2);
thickness 1⁄32 inch.
2000 Nov 15
7
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
Fig.12 PCB testcircuit
8
2000 Nov 15
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
PACKAGE OUTLINE SOT559A
Leadless surface mounted package; plastic cap; 16 terminations
SOT559A
e
e
1
L
(4×)
1
Z
(12×)
1
Z
(12×)
4
6
L
(4×)
L (12×)
b (12×)
Z (2×)
3
1
2
3
Z
5
4
5
(4×)
16
L
2
b
4
(4×)
(4×)
15
e
2
e
e
Z
1
(2×)
(6×)
Z
b
2
6
3
14
13
(2×)
(2×)
Z
(6×)
7
b
(4×)
7
e
2
7
8
Z
8
b
(4×)
12
8
11
10
9
b
(4×)
Z
(2×)
6
2
b
(4×)
b
(2×)
b (4×)
5
3
1
D
Dimensions solderresist
D
1
A
c
E
E
1
pin 1 index
Z
Z
Z
Z
Z
Z
Z
Z
8
1
2
3
4
5
6
7
0
5
10 mm
2.5
2.3
3.5 2.9 1.1 1.5 1.1 3.8 1.5
3.3 2.7 0.9 1.3 0.9 3.6 1.3
scale
DIMENSIONS (mm are the original dimensions)
A
b
b
b
b
b
b
b
6
b
b
c
D
D
E
E
e
e
e
L
L
L
L
3
Z
UNIT
1
2
3
4
5
7
8
1
1
1
2
1
2
1.9 1.1 3.5 2.9 5.275 4.2 1.2 0.625 0.8 0.9 0.55 14.05 13.6 11.3 10.85
1.5 0.9 3.3 2.7 5.075 4.0 1.0 0.425 0.6 0.7 0.45 13.45 13.3 10.7 10.55
1.1 1.6 0.6 1.6 2.6
0.9 1.4 0.4 1.4 2.4
mm
2.6 3.3 4.4
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
00-01-31
00-09-28
SOT559A
2000 Nov 15
9
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
DATA SHEET STATUS
PRODUCT
STATUS
DATA SHEET STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Nov 15
10
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70
SCA
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2000
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Printed in The Netherlands
budgetnum/printrun/ed/pp11
Date of release: 2000 Nov 15
Document order number: 9397 750 07748
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