BLA0912-250 [NXP]
Avionics LDMOS transistor; 航空电子LDMOS晶体管
| 型号： | BLA0912-250 |
| 厂家： | 
NXP |
| 描述： | Avionics LDMOS transistor |
| 文件： | 总12页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLA0912-250
Avionics LDMOS transistor
Rev. 02 — 22 July 2004
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
1.2 Features
■ High power gain
■ Easy power control
■ Excellent ruggedness
■ Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
■ Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.
1.4 Quick reference data
Table 1:
Quick reference data
Typical RF performance measured in common source class-AB circuit at PL = 250 W and 960 MHz to 1215 MHz frequency
band. Th = 25 °C; Zth = 0.15 K/W; unless specified otherwise.
Mode of operation
Conditions
VDS PL
Gp
∆Gp ηD
Pulse droop tr
tf
Zth(j-h) ϕR
(V) (W) (dB) (dB) (%) (dB)
(ns) (ns) (K/W) (deg)
tp = 100 µs; δ = 10 % 36
250 13.5 0.8 50
250 14.0 0.8 50
0.1
0
25
25
6
6
0.18 ±5
0.07 ±5
All modes
TCAS:
tp = 32 µs; δ = 0.1 %
36
1030 MHz to 1090 MHz
Mode-S:
1030 MHz to 1090 MHz
tp = 128 µs; δ = 2 %
tp = 340 µs; δ = 1 %
36
36
250 13.5 0.8 50
250 13.5 0.8 50
200 13.0 1.2 45
0.1
0.2
0.2
25
25
25
6
6
6
0.15 ±5
0.20 ±5
0.45 ±5
JTIDS:
tp = 3.3 ms; δ = 22 % 36
960 MHz to 1215 MHz
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
2. Pinning information
Table 2:
Pinning
Pin
1
Description
drain
Simplified outline
Symbol
1
1
3
2
gate
[1]
2
3
source
3
2
sym039
Top view
[1] Connected to flange.
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
flanged LDMOST ceramic package; 2 mounting holes; 2 leads
Version
BLA0912-250
-
SOT502A
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Ptot
Parameter
Conditions
Min
Max Unit
drain-source voltage (DC)
gate-source voltage (DC)
total power dissipation
storage temperature
junction temperature
-
75
V
-
±22
700
V
Th ≤ 25 °C; tp = 50 µs; δ = 2 %
-
W
Tstg
−65
+150 °C
Tj
-
200
°C
5. Thermal characteristics
Table 5:
Symbol
Zth(j-h)
Thermal characteristics
Parameter
thermal impedance from junction to heatsink Th = 25 °C
Conditions
Typ
Unit
[1]
0.18 K/W
[1] Thermal resistance is determined under RF operating conditions; tp = 100 µs, δ = 10 %.
9397 750 13275
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 22 July 2004
2 of 12
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
6. Characteristics
Table 6:
Characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown VGS = 0 V; ID = 3 mA
voltage
75
-
-
-
-
V
VGSth
gate-source threshold
voltage
VDS = 10 V; ID = 300 mA
4
5
1
V
IDSS
drain-source leakage
current
VGS = 0 V; VDS = 36 V
-
µA
IDSX
IGSS
on-state drain current
VGS = VGSth + 9 V; VDS = 10 V
VGS = 20 V; VDS = 0 V
45
-
-
-
-
A
gate-source leakage
current
1
µA
gfs
forward
transconductance
VDS = 10 V; ID = 10 A
VGS = 9 V; ID = 10 A
-
-
9
-
-
S
RDSon
drain-source on-state
resistance
60
mΩ
7. Application information
Table 7:
Application information
RF performance in common source class-AB circuit; Th = 25 °C; Zth = 0.15 K/W; unless specified
otherwise.
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
f
drain-source voltage
-
-
36
V
frequency
960
-
1215 MHz
PL
Gp
ηD
Zth
tr
load power
tp = 100 µs; δ = 10 %
POUT = 250 W
250
-
W
dB
%
power gain
12
13
50
-
drain efficiency
thermal impedance
rise time
tp = 100 µs; δ = 10 %
tp = 100 µs; δ = 10 %
40
-
0.2
50
25
K/W
ns
-
25
6
tf
fall time
-
ns
pulse droop
spurious
tp = 100 µs; δ = 10 %
-
0.1 0.5
dB
dBc
°C
VSWRL = 2:1
-
-
-
−60
Th
heatsink temperature
−55
+70
9397 750 13275
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 22 July 2004
3 of 12
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLA0912-250 is capable of withstanding a load mismatch corresponding to
VSWR = 5:1 through all phases under the following conditions: VDS = 36 V; f = 960 MHz to
1215 MHz at rated load power.
Table 8:
Typical impedance values
Frequency (MHz)
ZS (Ω)
ZL (Ω)
960
0.89 − j1.70
1.37 − j1.23
2.09 − j1.27
2.40 − j1.97
1.51 − j2.61
1.53 − j1.13
1.47 − j0.99
1.38 − j0.85
1.30 − j0.71
1.17 − j0.47
1030
1090
1140
1215
001aab078
001aab079
15
55
18
η
D
G
η
D
p
(5)
(1)
16
14
12
10
8
(dB)
13
(%)
45
(2)
G
G
p
p
(dB)
(4) (3)
11
9
35
25
15
5
6
7
4
5
940
2
990
1040
1090
1140
1190
f (MHz)
1240
0
100
200
300
P (W)
L
Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB;
tp = 100 µs; δ = 10 %.
Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB;
tp = 100 µs; δ = 10 %.
(1) f = 960 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
(4) f = 1140 MHz.
(5) f = 1215 MHz.
Fig 1. Power gain and drain efficiency as function of
frequency; typical values.
Fig 2. Power gain as function of load power; typical
values.
9397 750 13275
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 22 July 2004
4 of 12
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
001aab080
001aab081
(5)
300
250
60
50
40
30
20
10
0
(2)
(1)
(1)
P
L
η
D
(W)
200
(%)
(5)
(4)
(4)
(2)
(3)
(3)
150
100
50
0
0
2
4
6
8
10
12
14
P (W)
16
0
50
100
150
200
250
(W)
L
300
P
i
Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB;
tp = 100 µs; δ = 10 %.
Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB;
tp = 100 µs; δ = 10 %.
(1) f = 960 MHz.
(1) f = 960 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
(4) f = 1140 MHz.
(5) f = 1215 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.
(4) f = 1140 MHz.
(5) f = 1215 MHz.
Fig 3. Load power as function of input power; typical
values.
Fig 4. Efficiency as function of load power; typical
values.
9397 750 13275
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 22 July 2004
5 of 12
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
40
40
C1
C2 C3
C4
C5
C8 C9 C10
R1
R2
60
C7
C6
001aab083
Dimensions in mm.
See Table 9 for list of components.
Fig 5. Component layout for class-AB test circuit.
Table 9:
List of components for class-AB test circuit (see Figure 5). [1]
Component
Description
Value
1 nF
Catalogue no.
[3]
[2]
[3]
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
KEMET tantalum SMD capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
KEMET tantalum SMD capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD resistor (0805)
22 pF
1 nF
47 µF
56 pF
22 pF
47 pF
22 µF
1 nF
T491D476M020AS
T491D226M020AS
2333 156 14999
[2]
[2]
[2]
[3]
[2]
22 pF
51 Ω
philips resistor
49.9 Ω
[1] Layout files are available on request in gerber and dxf format.
[2] American Technical Ceramics type 100A or capacitor of same quality.
[3] American Technical Ceramics type 100B or capacitor of same quality.
9397 750 13275
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 22 July 2004
6 of 12
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
L2
L1
C1
L3
L4
L5 L6
L7
L8
C2
C3
C4
C5
001aab085
See Table 10 for details of striplines.
Fig 6. Layout of class-AB test circuit.
Table 10: Layout details for class-AB test circuit (see Figure 6). [1]
Component
Description
Dimensions
Input circuit
L1
C1
L2
stripline
stripline
stripline
5 mm × 0.8 mm
1.2 mm × 3.5 mm
cap. pad: 1 mm × 1 mm (1×)
curve: width 0.8 mm; angle 90°; radius 0.8 mm (10×)
vertical: 3.9 mm × 0.8 mm (2×)
vertical: 9.4 mm × 0.8 mm (3×)
horizontal: 0.5 mm × 0.8 mm (4×)
3 mm × 2 mm
L3
stripline
stripline
stripline
stripline
C2
4 mm × 6.5 mm
L4
5 mm × 1 mm
C3
8.8 mm × 30 mm + 0.2 mm × 13 mm
Output circuit
C4
L5
L6
C5
L7
stripline
stripline
stripline
stripline
stripline
0.2 mm × 13 mm + 19 mm × 17.1 mm
2.5 mm × 2.3 mm
4 mm × 1 mm
3 mm × 6.6 mm
curve: width 0.8 mm; angle 90°; radius 0.8 mm (6×)
vertical: 2.2 mm × 0.8 mm (2×)
vertical: 6 mm × 0.8 mm (1×)
horizontal: 1 mm × 0.8 mm (2×)
2.5 mm × 0.8 mm
L8
stripline
9397 750 13275
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 22 July 2004
7 of 12
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
Table 10: Layout details for class-AB test circuit (see Figure 6). [1] …continued
Component
1/4 λ line
Description
Dimensions
stripline
curve: width 1 mm; angle 90°; radius 0.8 mm
vertical: 5 mm × 1 mm
horizontal: 19 mm × 1 mm
tapered line: WI = 1 mm; L = 12 mm; angle = 60°
[1] Striplines are on a Rodgers Duroid 6010 printed-circuit board (εr = 10.2); thickness = 0.64 mm.
9397 750 13275
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 22 July 2004
8 of 12
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
1
H
U
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 7. Package outline.
9397 750 13275
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 22 July 2004
9 of 12
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
9. Revision history
Table 11: Revision history
Document ID
BLA0912-250_2
Modifications:
Release date Data sheet status
20040722 Product data
Change notice Order number
Supersedes
-
9397 750 13275 BLA0912-250_N_1
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
BLA0912-250_N_1 20031024
Preliminary specification -
9397 750 12224
-
9397 750 13275
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 22 July 2004
10 of 12
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
10. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13275
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 22 July 2004
11 of 12
BLA0912-250
Philips Semiconductors
Avionics LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
7.1
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 22 July 2004
Document order number: 9397 750 13275
Published in The Netherlands
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